• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.1847-1849
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• 2005

Unclamped Inductive Switching (UIS) 능력을 향상시키기 위하여 Floating p- well을 적용한 IGBT의 단락 회로 상태에서 과전압을 감지하는 새로운 보호회로를 제안하고 제작하였다. 실험 결과 제안된 회로는 fault 상황에서 fault 신호를 감지하고 즉시 게이트 전압을 낮추어 컬렉터 전류를 감소시켰다. 또한 Hard Switching Fault (HSF)와 Fault Under Load (FUL) 상황에서의 측정 및 2차원 Mixed-Mode 시뮬레이션을 통해 제안된 회로와 소자의 동작을 확인하였다.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1662-1664
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• 2003

An electron gun system for a nanosecond pulse linac has been built and tested. The gun grid is driven with a grid pulser, which consists of an avalanche transistor pulser and parallel triode amplifier. The amplifier is installed in an end hole of the electron gun and provided for power amplification and polarity change of the output pulses of the avalanche transistor pulser. An output pulse of 200 V and 2 ns FWHM was obtained by using the grid pulser of can type transistors. Measurements with a test bench show that the electron gun can deliver 2ns pulse with with currents larger than 3A.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.16 no.1
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• pp.101-114
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• 1991

In a DES-like cryptosystem, the S(ubstitution) boxes determine its cryptographic strength as well as its nonlinearity. When in an S box a part of the output depends on a part of the input. It can be broken by the chosen plaintext attack. To prevent this attack, every output bit should changes with a probability of one half when ever a single input bit is complemented. We call this criterion Strict Avalanche criterion(SAC), which was proposed by Webster and Tavared. In this paper, we propose simple construction method of Boolean functions satisfying the SAC and bijective functions satisfying the maximum order SAC in order to design cryptographically desirable S-boxes. Also, practical construction examples of S-boxes are provided.

• Journal of the Korea Institute of Information Security & Cryptology
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• v.1 no.1
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• pp.85-90
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• 1991

After we introduce the properties of bent functions satisfying the SAC(Strict Avalanche Criterion), we made cldar the relationship between two functions, i.e., all Boolean functions satisfying the maximum order SAC. Bant function will be useful to implement cryptographic functions like S-boxes of block cipher, nonlinear combiners, etc. But due to thear 0/1 unbalance and their existence for only even number of input bits, bent functions have some restrictions to use as a building block for constructing bijective cryptographic functions.

• Journal of the Korea Institute of Information Security & Cryptology
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• v.7 no.4
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• pp.51-58
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• 1997

GAC(Global Avalanche Charateristics)은부울함수가 확산특성 관점에서 얼마나 우수한지를 전체경우에 대하여 나타내는 특성으로 Zhang-Zheng(1995) 에 의해서 제안되었다. GAC개념이 등장하기 이전에는 부분적인 확산특성에 대하여만 연구를 하였으나 다른 암호학적인 특성과 연관하여 생각하면 전체적인 확산특성이 의미가 있다. Zhang-Zheng은 GAC을 측정하는 두가지 기준을 제시하고 이 기준에 대한 하한과 상한을 구하였으며 선형함수와 벤트함수에 대하여 이러한 상한과 하한이 달성됨을 증명하였다. 그러나 암호학적으로 의미가 있는 균형인 함수의 두가지 기준에 대한 하한과 상한은 밝혀지지 않았다. 본 논문에서는 부울함수가 균형인 함수의 두가지 기준에 대한 하한과 상한은 밝혀지지 않았다. 본 논문에서는 부울함수가 균형일 때 GAC을 측정하는 기준에 대한 하한을 제시한다. 이러한 하한 아직까지 미해결 문제로 남아있는 균형인 부울 함수의 비선형치에 대한 상한을 구하는데 새로운 방향을 제시할 수 있다.

• Proceedings of the Korean Vacuum Society Conference
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• 2003.08a
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• pp.137-138
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• 2003

• Proceedings of the Korean Radioactive Waste Society Conference
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• 2011.10a
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• pp.115-116
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• 2011

• Journal of the Korean Vacuum Society
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• v.18 no.2
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• pp.116-126
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• 2009

It is becoming more difficult to improve the device operating speed by shrinking the size of semiconductor devices. Therefore, for a new leap forward in the semiconductor industry, the advent of silicon opto-electronic devices, i.e., silicon photonics is more desperate. Silicon Avalanche LED is one of the prospective candidates to realize the practical silicon opto-electronic devices due to its simplicity of fabrication, repeatability, stability, high speed operation, and compatibility with silicon IC processing. We conducted the measurement of the electrical characteristics and the observation of the light-emitting phenomena using optical microscopy. We analyzed the influence of the design elements such as the shape of the light-emitting area and the depth of the $n^{+}-p^{+}$ junction with simple device modeling and simulation. We compared the results of simulation and the measurement and explained the discrepancy between the results of the simulation and the measurement, and the suggestions for the improvement were given.

• Tunnel and Underground Space
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• v.2 no.2
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• pp.212-223
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• 1992

The distinct element method(DEM) si well suited to the kinematic analysis of blocky rock masses. Two distinctive problems, a rock avalache and tunnel in jointed rock masses, are chosen to apply the DEM which is based on perfectly rigid behaviour of blocks. Investigated for both problems are the effects of the input parameters such as contact stiffnesses, friction coefficient and damping property. Using various types of models of the avalanche and tunne, an extensive parametric study is done to gain experiences in the method, and then to alleviate difficulties in determining parameter values suitable for a given problem. The coefficient of frictio has significant effects on all aspects of avalanche motion(travel distance, velocity and travel time), while the stiffnesses affect the rebounding and jumping motions after collision. The motion predicted by the models having single and mutiple blocks agrees well to the observations reported on the actual avalache. For the tunnel problem, the behaviour of the key block in an example tunnel is compared by testing values of the input parameters. The stability of the tunnel is dependent primarily on the friction coefficient, while the stiffness and damping properties influence the block velocity. The kinematic stability of a tunnel for underground unclear waste repository is analyzed using the joint geometry data(orientation, spacing and persistence) occurred in a tailrace tunnel. Allowing a small deviation to the mean orientation results in different modes of failure of the rock blocks around the tunnel. Of all parameters tested, the most important to the stability of the tunnel in blocky rock masses are the geometry of the blocks generated by mapping the joint and tunnel surfaces in 3-dimensions and also the friction coefficient of the joints particularly for the stability of the side walls.

• Journal of IKEEE
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• v.26 no.3
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• pp.333-340
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• 2022

Process and device simulations were performed to determine the optimal ion implantation conditions to prevent double snapback of high voltage operating DDDNMOS (double diffused drain N-type MOSFET) device for ESD protection. By examining the effects of HP-Well, N^- drift and N⁺ drain ion implantation on the double snapback and avalanche breakdown voltages, it was possible to prevent double snapback and improve the electrostatic protection performance. If the ion implantation concentration of the N^- drift region rather than the HP-Well region is optimally designed, it prevents the transition from the primary on-state to the secondary on-state, so that relatively good ESD protection performance can be obtained. Since the concentration of the N^- drift region affects the leakage current and the avalanche breakdown voltage, in the case of a process technology with an operating voltage greater than 30V, a new structure such as DPS or colligation of optimal process conditions can be applied. In this case, improved ESD protection performance can be realized.