• Journal of the Korean Magnetics Society
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• v.5 no.5
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• pp.778-781
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• 1995

The mixed ferrite $Ni_{x}Co_{1-x}Fe_{2}O_{4}$ have been investigated by X-ray and $M\"{o}ssbauer$ spectoscpy. From the results of X-ray diffraction measurement the structure for this system is spinel, and the lattice constant is in accord with Vegard's law. $M\"{o}ssbauer$ spectra of $Ni_{x}Co_{1-x}Fe_{2}O_{4}$ have been taken at various temperature ranging from 13 to 800 K. The isomer shifts indicate that the valence states of the irons at both A(tetrahedral) and B(octahedral) sithe are found to be in ferric high-spin states. The variation of magnetic hyperfine fields at the A and B sites are explained on the basis on A-B and B-B supertransferred hyperfine interactions. It is found that Debye temperatures for the A and B sites of $CoFe_{2}O_{4}$ and $NiFe_{2}O_{4}$ are found to be ${\theta}_{A}=734{\pm}5K,\;{\theta}_{B}=248{\pm}5K,\;and\;{\theta}_{A}=378{\pm}5K,\;{\theta}_{B}=357{\pm}5K$, respectively. Atomic migration of $Ni_{0.3}Co_{0.7}Fe_{2}O_{4}$ starts near 450 K and increases rapidly with increasing temperature to such a degree that 61 % of the ferric ions at the A site have moved over to the B site by 700 K.

• Journal of IKEEE
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• v.23 no.2
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• pp.594-598
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• 2019

We demonstrate an alternative alignment process using transferring process on solution driven HfZnO film. Parallel pattern is firstly fabricated on a silicon wafer by laser interference lithography. Prepared HfZnO solution fabricated by sol-gel process is spin-coated on a glass substrate. The silicon wafer with parallel pattern is placed on the HfZnO film and annealed at $100^{\circ}C$ for 30 min. After transferring process, parallel grooves on the HfZnO film is obtained which is confirmed by atomic force microscopy and scanning electron microscopy. Uniform liquid crystal alignment is achieved which is attributed to an anisotropic characteristic of HfZnO film by parallel grooves. The liquid crystal cell exhibited a pretilt angle of $0.25^{\circ}$ which showed a homogeneous alignment property.

• Transactions on Electrical and Electronic Materials
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• v.13 no.2
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• pp.64-68
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• 2012

We have successfully demonstrated a bandgap alteration of transparent zinc oxide (ZnO) thin film with Mg dopant by using sol-gel spin coating technique. By increasing the dopant from 0 to 30 atomic percent (at.%), a decrement value in the cutoff is observed, where the absorption edge shifts continuously to the shorter wavelength side, towards 300 nm. This resulted in a significant bandgap increment from 3.28 to 3.57 eV. However, the transmittance of the thin film at 350-800 nm gradually downgraded, from 93 to 80 % which is most probably due to the grain size that becomes bigger, and it also affected the electrical properties. The decrement from 45 to 0.05 mA at +10 V was observed in the I-V characteristics, concluding the significant relationship; where higher optical bandgap materials will exhibit lower conductivity. These findings may be useful in optoelectronics devices.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.242-242
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• 2012

Transparent oxide semiconductors are increasingly becoming one of good candidates for high efficient channel materials of thin film transistors (TFTs) in large-area display industries. Compare to the conventional hydrogenated amorphous silicon channel layers, solution processed ZnO-TFTs can be simply fabricated at low temperature by just using a spin coating method without vacuum deposition, thus providing low manufacturing cost. Furthermore, solution based oxide TFT exhibits excellent transparency and enables to apply flexible devices. For this reason, this process has been attracting much attention as one fabrication method for oxide channel layer in thin-film transistors (TFTs). But, poor electrical characteristic of these solution based oxide materials still remains one of issuable problems due to oxygen vacancy formed by breaking weak chemical bonds during fabrication. These electrical properties are expected due to the generation of a large number of conducting carriers, resulting in huge electron scattering effect. Therefore, we study a novel technique to effectively improve the electron mobility by applying environmental annealing treatments with various gases to the solution based Li-doped ZnO TFTs. This technique was systematically designed to vary a different lithium ratio in order to confirm the electrical tendency of Li-doped ZnO TFTs. The observations of Scanning Electron Microscopy, Atomic Force Microscopy, and X-ray Photoelectron Spectroscopy were performed to investigate structural properties and elemental composition of our samples. In addition, I-V characteristics were carried out by using Keithley 4,200-Semiconductor Characterization System (4,200-SCS) with 4-probe system.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.361-361
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• 2012

PZT (Pb(Zr,Ti)O3) thin films have been used widely in the MEMS application, due to their inherent ferroelectric and piezoelectric properties. Such ferroelectricity induces much higher dielectric constants compared to those of the nonperovskite materials. In this work, the PZT thin films were deposited onto Indium-Tin-oxide (ITO) substrates through the spin-coating of PZT sols. The deposited PZT thin films were characterized in terms of the electrical and optical properties with special emphases on conductivity and optical constants. The detailed analysis techniques incorporate the dc-based current-voltage characteristics for the electrical properties, spectroscopic ellipsometry for optical characterization, atomic force microscopy for surface morphology, X-ray Photoelectron Spectroscopy for chemical bonding, Energy-dispersive X-ray Spectrometry for chemical analyses and X-ray diffraction for crystallinity. The ferroelectric phenomena were confirmed using capacitance-voltage measurements. The integrated physical/chemical features are attempted towards energy-oriented applications applicable to next-generation high-efficiency power generation systems.

• Transactions on Electrical and Electronic Materials
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• v.14 no.4
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• pp.165-171
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• 2013

Nanostructured pure a-C and nitrogen doped a-C: N thin films with small particle size of, ~50 nm were obtained by Aerosol-assisted CVD method from the natural precursor camphor oil. Five samples were prepared for the a-C and a-C: N respectively, with the deposition temperatures ranging from $400^{\circ}C$ to $600^{\circ}C$. At high temperature, the AFM clarifies an even smoother image, due to the increase of the energetic carbon ion bombardment at the surface of the thin film. An ohmic contact was acquired from the current-voltage solar simulator characterization. The higher conductivity of a-C: N, of ${\sim}{\times}10^{-2}Scm^{-1}$ is due to the decrease in defects since the spin density gap decrease with the nitrogen addition. Pure a-C exhibit absorption coefficient, ${\alpha}$ of $10^4cm^{-1}$, whereas for a-C:N, ${\alpha}$ is of $10^5cm^{-1}$. The high ${\sigma}$ value of a-C:N is due to the presence of more graphitic component ($sp^2$ carbon bonding) in the carbon films.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.333-333
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• 2013

The poor conductivity of poly (3,4-ethylene dioxythiophene): poly (styrenesulfonate) (PEDOT:PSS) film hinders to use for a flexible electrode in solar cells. In this report we demonstrate that the conductivity of PEDOT:PSS film can be enhanced by modifying structures in a mixture of PEDOT: PSS aqueous solution and various organic solvents such as polar protic (2-propanol, methanol, ethanol, formic acid) and aprotic solvents (acetone and acetonitrile). To comparatively study the structural effects on the resulted electrical properties, the films are spin-coated on glasses and ITO. At the same time, a contact angle goniometer is used for clarifying a mechanism of wettability of PEDOT (hydrophobic) and PSS (hydrophilic) on the observed conductivity. The structures and electrical properties are investigated by FE-SEM (Field Emission Scanning Electron Microscopy), AFM (Atomic Force Microscopy), and 4-point probe, respectively.

• Bulletin of the Korean Chemical Society
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• v.28 no.12
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• pp.2333-2337
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• 2007

Nanoporous TiO2 and ZrO2 thin films were spin-coated using a surfactant-templated approach from Pluronic P123 (EO20PO70EO20) as the templating agent, titanium alkoxide (Ti(OC4H9)4) as the inorganic precursor, and butanol as a the solvent. The control of the electronic structure of TiO2 is crucial for its various applications. We found that the band gap of the hybrid nanoporous thin films can be easily tuned by adding an acetylacetonestabilized Zr(OC4H9)4 precursor to the precursor solution of Ti(OC4H9)4. Pores with a diameter of 5 nm-10 nm were randomly dispersed and partially connected to each other inside the films. TiO2 and ZrO2 thin films have an anatase structure and tetragonal structure, respectively, while the TiO2-ZrO2 hybrid film exhibited no crystallinity. The refractive index was significantly changed by varying the atomic ratio of titanium to zirconium. The band gap for the nanoporous TiO2 was estimated to 3.43 eV and that for the TiO2-ZrO2 hybrid film was 3.61 eV.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.675-678
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• 2003

We studied the electrical characteristics of pentacene-based organic field-effect transistors (FETs) with polymethyl methacrylate (PMMA) or poly-4-vinylphenol (PVP) as the gate insulator. PMMA or PVP was spin-coated on the indium tin oxide glass substrate that serves as gate electrodes. The source-drain current dependence on the gate voltage shows the FET characteristics of the hole accumulation type. The transistor with PVP shows a higher field-effect mobility of 0.14 $cm^{2}/Vs$ compared with 0.045 $cm^{2}/Vs$ for the transistor with PMMA. The atomic force microscope (AFM) images indicate that the grain size of the pentacene on PVP is larger than that on PMMA. X-ray diffraction (XRD) patterns for the pentacene deposited on PVP exhibit a new Bragg reflection at $19.5{\pm}0.2^{\circ}$, which is absent for the pentacene on PMMA. This peak corresponds to the flat-lying pentacene molecules with less intermolecular spacing.

• Journal of the Korean Institute of Telematics and Electronics B
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• v.32B no.5
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• pp.683-692
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• 1995

Many kinds of large scale multiprocessing and parallel-processing systems have recently been developed. The contention on the shared data caused by multiple processors may degrade system performance. So, processor synchronization has become one of the important issues in these systems. To solve the synchornization issues, a lot of software and hardware schemes based on spin lock have been proposed. Although software schemes are easy to implement, hardware schemes are preferred in many systems to gain optimized performance. This paper proposes an efficient processor synchronization scheme, called QCX,and describes its design considerations, hardware, algorithm, protocol. Also, in this paper, the performance of QCX has been evaluated with QOLB[5] and LBP[7] using a simulation. The simulation, with varying the number of processor and the contention on shared variables, measured the average execution times of a workload. The simulation results show that the performances of QCX is best when practicability is considered. QCX is more efficient than QOLB and LBP in two aspects. First, the hardware of QCX is more simple and cost-effective because the cache structure need not be changed. Secondly, QCX is more general because it uses a generic atomic instruction.