• Progress in Superconductivity and Cryogenics
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• v.17 no.4
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• pp.1-7
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• 2015

This paper addresses technical problems of thermal contact conductance or resistance which inevitably occurs in most cryogenic engineering systems. The main focus of this paper is to examine what kind of physical factors primarily influences the thermal contact resistance and to suggest how it can be minimized. It is a good practical rule that the contact surface must have sub-micron roughness level with no oxide layer and be thinly covered by indium, gold, or Apiezon-N grease for securing sufficient direct contact area. The higher contact pressure, the lower the thermal contact resistance. The general description of this technique has been widely perceived and reasonable engineering results have been achieved in most applications. However, the detailed view of employing these techniques and their relative efficacies to reduce thermal contact resistances need to be thoroughly reviewed. We should consider specific thermal contact conditions, examine the engineering requirements, and execute each method with precautions to fulfil their maximum potentials.

• Proceedings of the KIEE Conference
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• 1996.11a
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• pp.457-461
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• 1996

An optimum design methodology for the power MOSFET's with a predetermined mask is proposed and verified by comparing with the results of MEDICI simulation and the data of commercially available devices. Optimization is completed by determining a doping concentration and a thickness of the epitaxial layer which satisfy a specific voltage and current rating requirements as well as a minimum on-resistance for the mask set. The commercial HEX-1 mask set with a die area of $40.4{\times}10^{-3}\;cm^2$ and a T0-220 package has the on-resistance of $1.5{\Omega}$ at 200 V/2.5 A rating while the M-1 mask from this study exhibits $0.6{\Omega}$ on-resistance at 200 V/6 A. The 60 % reduction in the on-resistance and 58 % enhancement in the current rating have been obtained by the proposed method.

• KOREAN JOURNAL OF CROP SCIENCE
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• v.40 no.2
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• pp.125-132
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• 1995

Studies were made on differences among types and varieties of rice in stomatal density and gas diffusion resistance, and on the relationship between these traits and photosynthetic rate. Significant differences among types and varieties were found stomatal density and gas diffusion resistance. Generally, stomatal density was higher in indica varieties than in Japonica varieties, gas diffusion resistance was lower in the former than in the later, in varieties developed through indica-japonica hybridization it was intermadiate. The stomatal density was closely positively correlated with the gas conductivity and the net photosynthetic rate, was not correlated with single leaf area, and had significant negative correlation with specific leaf weight. Higher photosynthetic rate of indica varieties mainly results from its high stomatal density and low gas diffusion resistance. The result also suggested that high photosynthetic rate might be obtained if the high stomatal density and low gas diffusion resistance in indica could be combined with the larger specific leaf weight in japonica through crossing between two.

• Korean Journal of Materials Research
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• v.17 no.10
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• pp.516-520
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• 2007

Indium tin oxide, which is used as transparent conducting layer in flexible device, is deposited on PET film by a magnetron sputtering in 300 mm wide roll-to-roll process (vacuum web coating). Sheet resistance, specific resistance and transmittance is differed by sputtering parameters such as working pressures, oxygen partial pressure, and thickness of ITO layer. ITO layer is deposited about 90 nm at roll speed of 0.24 m/min and its sputtering power is 3 kW. From the XRD spectrum deposited ITO layer is verified as amorphous. Under working pressure varied from $3{\times}10^{-4}\;Torr$ to $2{\times}10^{-3}\;Torr$, sheet resistance is lowest at the working pressure of $1{\times}10^{-3}\;Torr$ and its value is from $110\;{\Omega}/{\square}$ to $260\;{\Omega}/{\square}$ at the thickness of 90 nm. Oxygen partial pressure also varies sheet resistance and is optimized at the regime from 0.2% ($1.8{\times}10^{-6}\;Torr$) to 0.6% ($6{\times}10^{-6}\;Torr$). In this oxygen partial pressure sheet resistance is lower than $150\;{\Omega}/{\square}$. As ITO layer thickness increases, sheet resistance decreases down to $21\;{\Omega}/{\square}$ and specific resistance is about $7.5{\times}10.4{\Omega}cm$ in 340 nm thickness ITO layer. Transmittance is measured at the wavelength of 550 nm and is about 90% for 180 nm thickness ITO/PET.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.346.1-346.1
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• 2014

Porous nano crystalline $TiO_2$ is currently used as a working electrode in a dye-sensitized solar cell (DSSC). The conventional working electrode is comprised of absorption layer (particle size:~20 nm) and scattering layer (particle size:~300 nm). We inserted window layer with 10 nm particle size in order to increase transmittance and specific surface area of $TiO_2$. The electrochemical impedance spectroscope analysis was conducted to analysis characterization of the electronic behavior. The Bode phase plot and Nyquist plot were interpreted to confirm the internal resistance caused by the insertion of window layer and carrier lifetime. The photocurrent that occurred in working electrode, which is caused by rise in specific surface area, increased. Accordingly, it was found that insertion of window layer in the working electrode lead to not only effectively transmitting the light, but also increasing of specific surface area. Therefore, it was concluded that insertion of window layer contributes to high conversion efficiency of DSSCs.

• Journal of Microbiology and Biotechnology
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• v.12 no.1
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• pp.31-38
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• 2002

Bacteria have evolved various types of resistance mechanism to toxic heavy metals, such as arsenic and antimony. An arsenical and antimonial resistant bacterium was isolated from a shallow creek draining a coal-mining area near Taebaek City, in Kangwon-Do, Korea. The isolated bacterium was identified and named as Pseudomonas sp. KM20 after biochemical and physiological studies were conducted. A plasmid was identified and its function was studied. Original cells harboring the plasmid were able to grow in the presence of 15 mM sodium arsenite, while the plasmid-cured (plasmidless) strain was sensitive to as little as 0.5 mM sodium arsenate. These results indicated that the plasmid of Pseudomonas sp. KM20 does indeed encode the arsenic resistance determinant. In growth experiments, prior exposure to 0.1 mM arsenate allowed immediate growth when they were challenged with 5 mM arsenate, 5 mM arsenite, or 0.1 mM antimonite. These results suggested that the arsenate, arsenite, and antimonite resistance determinants of Pseudomonas sp. KM20 plasmid were indeed inducible. When induced, plasmid-bearing resistance cells showed a decreased accumulation $of\;73^As$ and showed an enhanced efflux $of\;^73As$. These results suggested that plasmid encoded a transport system that extruded the toxic metalloids, resulting in the lowering of the intracellular concentration of toxic oxyanion. In a Southern blot study, hybridization with an E. coli R773 arsA-specific probe strongly suggested the absence of an arsA cistron in the plasmid-associated arsenical and antimonial resistance determinant of Pseudomonas sp. KM20.

• Journal of the Korean Ceramic Society
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• v.29 no.1
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• pp.35-40
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• 1992

Porous glass in the ZrO2-SiO2 system containing up to 30 mol% zirconia were prepared from the mixed solutions of Zr(O.nC3H7)4 and partially prehydrolyzed TEOS by the sol-gel method. Pore characteristics, physical properties and alkali resistance were investigated. The gels converted into the porous glass by heating at $700^{\circ}C$, it was found that the glass like skeleton was already made up in lower temperature regions. The specific surface area of the porous glass was 227 $m^2$/g, average mean pore size was about 19$\AA$ and porosity was 19.2%, pore characteristics and physical properties depended on heating temperature. Alkali resistance of the porous glass increased as the zirconia content increased, because of the appearance of Zr-enriched layer at glass surface.

• The Plant Pathology Journal
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• v.40 no.3
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• pp.329-335
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• 2024

Phytophthora root and stem rot (PRR), caused by Phytophthora sojae, can occur at any growth stage under poorly drained and humid conditions. The expansion of soybean cultivation in South Korean paddy fields has increased the frequency of PRR outbreaks. This study aimed to identify four P. sojae isolates newly collected from domestic fields and evaluate race-specific resistance using the hypocotyl inoculation technique. The four isolates exhibited various pathotypes, with GJ3053 exhibiting the highest virulence complexity. Two isolates, GJ3053 and AD3617, were screened from 205 soybeans, and 182 and 190 genotypes (88.8 and 92.7%, respectively) were susceptible to each isolate. Among these accessions, five genotypes resistant to both isolates were selected. These promising genotypes are candidates for the development of resistant soybean cultivars that can effectively control PRR through gene stacking.

• Journal of IKEEE
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• v.25 no.3
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• pp.467-472
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• 2021

Stable operation of semiconductor devices is needed even at high temperatures. Among the structures of semiconductor devices, the area that can cause unstable electrical responses at high temperatures is the contact layer between the metal and the semiconductor. In this study, the effect of annealing conditions included in the process of forming a contact layer of nickel silicide(NiSix) on a p-type SiC layer on the specific contact resistance of the contact layer and the total resistance between the metal and the semiconductor was investigated. To this end, a series of electrodes for TLM (transfer length method) measurements were patterned on the 4 inch p-type SiC layer under conditions of changing annealing temperature of 1700 and 1800 ℃ and annealing time of 30 and 60 minutes. As a result, it was confirmed that the annealing conditions affect the resistance of the contact layer and the electrical stability of the device.

• Weed & Turfgrass Science
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• v.7 no.2
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• pp.166-169
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• 2018

Repeated use of ACCase inhibiting herbicides for a long time has resulted in increases of resistant Echinochloa oryzicola populations in paddy fields in middle west area of Korea. This study aims to investigate current status of herbicide resistant E. oryzicola in Gyeongsangnam-do, in which there is less information about herbicide resistance. For resistance frequency and dose-response study, seeds from 100 individual plants of E. oryzicola in Gyeongsangnam-do were collected and tested with cyhalofop-butyl. Seven percent of plants from Gyeongsangnam-do was resistant at a recommended rate of cyhalofop-butyl. $GR_{50}$ values (herbicide rates required to reduce plant growth 50%) for one representative resistant populations and five susceptible populations were $738g\;a.i.\;ha^{-1}$ and 66-234 (average 147)$g\;a.i.\;ha^{-1}$, respectively, indicating average 5 times difference in resistance. Although lower rate of frequency of herbicide resistance in Gyeongsangnam-do than in Jeollabuk-do, increases of herbicide resistance are expected in this area because of increases of direct seeded rice fields and increases of dependence on a specific herbicide. Therefore, it is necessary to monitor herbicide resistance regularly and conduct integrated herbicide resistance management in this area.