• 제목/요약/키워드: application layer

검색결과 2,963건 처리시간 0.037초

점탄성층을 삽입한 3층 적층보의 진동감쇠특성에 관한 연구 (A Study on the Characteristics of Vibration Damping of a Beam with Inserted Viscoelastic Layer)

  • 박응순;박세만;박명균;박상규
    • 소음진동
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    • 제7권3호
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    • pp.511-519
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    • 1997
  • For a number of years it has been known that flexural vibration in a beam and plate can be damped by the application of layer of damping (viscoelastic) material that is in turn constrained by a backing layer or foil. In this study, a quantitative analysis of damping of the sandwich beam has been performed by using impact test. The damping is characterized by the loss factor .etha. in which the damping is normalized by imaginary part of the complex bending stiffiness of the beam. Results show that the relative thickness of the sandwich beam gives more effect on the riatural-frequencies and loss factor than the variation of width does. It is also shown that the Ross-Kerwin-Ungar equation and impact test can be effectively used to identify the damping characteristic of the sandwich beam and viscoelastic material.

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2Layer-Virtual Cell 방식을 이용한 분산 MMORPG게임서버 (MMORPG Distributed Game Server using 2Layer-Virtual Cell)

  • 장수민;박용훈;유재수
    • 한국콘텐츠학회:학술대회논문집
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    • 한국콘텐츠학회 2006년도 춘계 종합학술대회 논문집
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    • pp.189-192
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    • 2006
  • 다수 사용자용 온라인 게임은 온라인 서비스들 중에 중요한 부분을 차지하고 있다. 최근에는 네트워크를 통한 온라인 서비스를 이용하는 사용자들의 증가로 인해 서버에 부하가 가중되고 있다. 본 논문에서는 이와 같은 문제를 해결하는 2Layer-Virtual Cell방식을 이용한 분산 MMORPG(Massively Multi-player Online Role Playing Game)게임 서버를 제안한다. 제안하는 방식은 많은 사용자들을 위한 MMORPG 분산 게임서버에 효과적인 해결책을 제공한다.

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신경회로망을 이용한 다층장갑의 방호성능 예측 (A Terminal Ballistic Performance Prediction of Multi-Layer Armor with Neural Network)

  • 유요한;김태정;양동열
    • 한국군사과학기술학회지
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    • 제4권2호
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    • pp.189-201
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    • 2001
  • For a design of multi-layer armor, the extensive full scale or sub-scale penetration test data are required. In generally, the collection of penetration data is in need of time-consuming and expensive processes. However, the application of numerical or analytical method is very limited due to poor understanding about penetration mechanics. In this paper, we have developed a neural network analyzer which can be used as a design tool for a new armor. Calculation results show that the developed neural network analyzer can predict relatively exact penetration depth of a new armor through the effective analysis of the pre-existing penetration database.

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$Si_3N_4$ trap layer의 두께에 따른 charge trap 특성 (Charge trap characteristics with $Si_3N_4$ tmp layer thickness)

  • 정명호;김관수;박군호;김민수;정종완;정홍배;조원주
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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    • pp.124-125
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    • 2008
  • The charge trapping and tunnelling characteristics with various thickness of $Si_3N_4$ layer were investigated for application of TBE (Tunnel Barrier Engineered) non-volatile memory. We confirmed that the critical thickness of no charge trapping was existed with decreasing $Si_3N_4$ thickness. Also, the charge trap centroid x and charge trap density were extracted by using CCS (Constant Current Stress) method. Through the optimized thickness of $Si_3N_4$ layer, it can be improve the performance of non-volatile memory.

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위성체의 동력원으로서의 GaAs 태양전지 (GaAs solar cells for a satellite application)

  • 이승기;한민구
    • 제어로봇시스템학회:학술대회논문집
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    • 제어로봇시스템학회 1988년도 한국자동제어학술회의논문집(국내학술편); 한국전력공사연수원, 서울; 21-22 Oct. 1988
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    • pp.620-626
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    • 1988
  • GaAs solar cells may be the most attractive and efficient power source of a satellite. GaAs is more radiation tolerant and less temperature sensitive than widely used silicon. $Al_{x}$ Ga$_{1-x}$ As/GaAs solar cells have been designed and fabricated by Liquid Phase Epitaxial method. GaAs solar cells, of which structure is about 0.2 .mu.m p$^{+}$ - window layer, 0.6-1.O .mu.m Ge-doped p-layer. 3.mu.m n-GaAs layer and n$^{+}$ - buffer layer, have been characterized as a function of operating temperature from 25 .deg.C to 130 .deg.C. Open circuit voltage decreases linearly with increasing temperature by 1.4-1.51 mV/ .deg.C while degradation of silicon solar cells is about 2.2-2.5 mV/ .deg.C, short circuit current does not increase much with increasing temperature. Relative efficiency decreases with increasing of temperature by about 0.21-0.29 %/ .deg.C. Efficiency degradation of silicon solar cells with temperature is known to be about 0.5%/ .deg.C and our results show GaAs solar cells may be an excellent candidate for concentrated solar cells.ells.

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Application of the Scaling Law for Swept Shock/Boundary-Layer Interactions

  • Lee, Yeol
    • Journal of Mechanical Science and Technology
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    • 제17권12호
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    • pp.2116-2124
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    • 2003
  • An experimental study providing additional knowledge of quasi-conical symmetry in swept shock wave/turbulent boundary-layer interactions is described. When a turbulent boundary layer on the flat plate is subjected to interact with a swept planar shock wave, the interaction flowfield far from fin leading edge has a nature of conical symmetry, which topological features of the interaction flow appear to emanate from a virtual conical origin. Surface streakline patterns obtained from the kerosene-lampblack tracings have been utilized to obtain representative surface features of the flow, including the location of the virtual conical origin. The scaling law for the sharp-fin interactions suggested by previous investigators has been reexamined for different freestream Mach numbers. It is noticed that the scaling law reasonably agrees with the present experimental data, however, that the law is not appropriate to estimate the location of the virtual conical origin. Further knowledge of the correlation for the virtual conical origin has thus been proposed.

차폐층을 고려한 고온초전도 전력 케이블의 전류분류 해석 (Analysis of Current Distribution of HTSC Power Cable Considering Shield Layer)

  • 이종화;임성훈;고석철;박충렬;한병성;황시돌
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2004년도 춘계학술대회 논문집 전기기기 및 에너지변환시스템부문
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    • pp.12-14
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    • 2004
  • Superconducting transmission power cable is one of interesting parts in power application using high temperature superconducting wire. One of import ant parameters in high-temperature superconduting (HTSC) cable design is transport current distribution because it is related with current transmission capacity and AC loss. In this paper, the transport current distribution at conducting layers was investigated through the analysis of the equivalent circuit for HTSC power cable with shield layer and compared with the case of without shield layer. The transport current distribution due to of the contact resistance and the pitch was improved in the case of HTSC power cable with shield layer from the analysis.

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Si가 첨가된 MgO의 기초 물성 및 응용 연구 (A Study on the Material Property and Application of the Si-doped MgO Layer)

  • 조성용;박정후;유윤식;이돈규
    • 전기학회논문지
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    • 제58권12호
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    • pp.2441-2445
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    • 2009
  • The effects of Si -doped MgO have been investigated in order to improve the material properties of the MgO protective layer in plasma display panels. A small amount of Si is added to the MgO pellet while the MgO layer is being deposited by using an electron-beam evaporation method. Both the surface characteristics of the protecting layer and the electro-optical properties of 4 in. test panels are investigated, such as XRD patterns, SEM images, firing and sustain voltages, secondary electron emission coefficient($\gamma$), luminance, luminous efficacy and lifetime. The firing and sustain voltage are minimized when Si concentration is 0.038%, where the luminance and luminous efficacy increase up to 17% and 26% compared with that of the pure MgO film, separately, and lifetime also shows good characteristics.

Transparent Conducting Zinc-Tin-Oxide Layer for Application to Blue Light Emitting-diode

  • 김도현;김기용
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.346.2-346.2
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    • 2014
  • To use the GaN based light-emitting diodes (LEDs) as solid state lighting sources, the improvement of light extraction and internal quantum efficiency is essential factors for high brightness LEDs. In this study, we suggested the new materials system of a zinc tin oxide (ZTO) layer formed on blue LED epi-structures to improve the light extraction. ZTO is a representative n-type oxide material consisted of ZnO and SnO system. Moreover, ZTO is one of the promising oxide semiconductor material. Even though ZTO has higher chemical stability than IGZO owing to its SnO2 content this has high mobility and high reliability. After formation of ZTO layer on p-GaN layer by using the spin coating method, structural and optical properties are investigated. The x-ray diffraction (XRD) measurement results show the successful formation of ZTO. The photoluminescence (PL) and absorption spectrum shows that it has 3.6-4.1eV band gap. Finally, the light extraction properties of ZTO/LED chip using electroluminescence (EL) measurement were investigated. The experimental and theoretical analyses were simultaneously conducted.

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Application of Novel BSF Metal and Laser Annealing to Silicon Heterojunction Solar Cell

  • 봉성재;김선보;안시현;박형식;이준신
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.491.2-491.2
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    • 2014
  • Generally, silicon heterojunction solar cell has intrinsic and n-type of hydrogenated amorphous silicon (a-Si:H) as passivation layer and BSF layer. In this study, antimony, novel material, deposited on back side of the heterojunction solar cell as passivation and BSF layer to substitute the a-Si:H and the characteristics of the solar cell such electrical properties and optical properties were analyzed. And SIMS analysis was carried out to obtain the depth profile of the BSF layer which was deposited by laser annealing process.

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