• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2008년도 춘계학술대회 논문집
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• pp.129-130
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• 2008

• Applied Science and Convergence Technology
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• 제23권5호
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• pp.284-288
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• 2014

We present tapered nanostructures fabricated on a selective area of gallium phosphide substrates for advanced optoelectronic device applications. A lithography-free fabrication process was accomplished by dry etching of metal nanoparticles. Thermal dewetting of micro-patterned metal thin films provides etch masks for tapered nanostructures. This simple process also allows the formation of plasmonic surfaces with corrugated shapes. Rigorous coupled-wave analysis calculations provide design guidelines for tapered nanostructures on gallium phosphide substrates.

• E2M - 전기 전자와 첨단 소재
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• 제7권3호
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• pp.220-224
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• 1994

In this study, we discussed the optical property to find the optimal condition of Te-based antireflection trilayer(ART) structure for a high density optical recording. It was found that the optical property was improved by suggesting the environmental parameters satisfied the optimum condition. As the results, the optimized(.lambda.=8.000${\AA}$.) thickness of the recording layer is 27${\AA}$, and the 1st and 2nd minimum ART conditions of dielectric layers are 1080${\AA}$, 3820${\AA}$, respectively. And the high SNR, the contrast ratio and the sensitivity are achieved by using the ART conditions.

• 한국통신학회논문지
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• 제21권7호
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• pp.1850-1860
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• 1996

We present the results for the design ofantireflection (AR) coatings on facets of a multilayered structure waveguide device. The method, whose results agree very well with the reusults of the rigorous method in the case of a symmetric three layer structure deveice, is extended for the design of AR coatings on the facets of a multilayered structure waveguide device. the field profile in a multilayered structure waveguide necessary for the use of the extended method is obtained from the transfer matrix method. The virtual four layered structure method (VFLM) is proposed to reduce the time for the design ofAR coatings because the time for the design of AR coatings using the extended method increases as the number of layers increases. The optimum coating parameters and tolerance mapsfor two different six layered waveguide devices in Ref. [9] and [10] are obtained using the extendedmethod and the VFLM,and for the three different cases approximated as three layered waveguide devices to compare the results of each case. The results of the VFLM are similar to those of the extended methodcompared to those of the three layered structure waveguide. The main reason for the above results is that the field profile in the device calculated usingthe VFLM is similar to that calculated using the extended method compared to that for three layered structure wavegjide. We conclude that the extended method or VFLM should be used for the design of AR coatings on facets of a deice required for the facet reflectivity less than 10$^{-3}$ such as a semiconductor otical amplifier.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.300-300
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• 2011

Si oxidation is a key process in developing silicon devices, such as highly integrated metal-oxide-semiconductor (MOS) transistors and antireflection-coating (ARC) on solar cell substrate. Many experimental and theoritical studies have been carried out for elucidating oxidation processes and adsorption structure using ab initio total energy and electronic structure calcultaions. However, the initial oxidation processes at step edge on vicinal Si surface have not been studied using the ReaxFF reactive force field. In this work, strucutural change, charge distribution of oxidized Si throughout the depth from Si surface were observed during oxidation processes on vicinal Si(001) surface inclined by $10.5^{\circ}$ of miscut angle toward [100]. Adsorption energys of step edge and flat terrace were calculated to compare the oxidation reaction at step edge and flat terrace on Si surface.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1988년도 추계학술대회 논문집 학회본부
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• pp.164-167
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• 1988

This paper reports optical properties and hole formation of a 488nm-optimumed trilayer structure utiluzed Te-based thin films as a recording layer, and the application of trilayer to 830nm. The optical recording characteristics of metallic recording media are enhanced significantly by incoporating the metal (Al) layer into an antireflection trilayer structure. Due to the interference condition inherent in the design of the trilayer structure, reflectance from holes is ranked a low fraction. the hole formation is carried out by laser by $Ar^+$ laser(488nm). For 20nsec laser pulse duration, the hole opening threshold power of $(Te_{86}Se_{14})_{50}Bi_{50}$ trilayer is lower than that of monolayor that used in this experiments. Hole shapes of the whole sample were clean. For the application of the diode laser, the thickness of dielectric is varied by$\lambda$/4n. In order to compare the monolayer with the trilayer reflectance was measured.

• 반도체디스플레이기술학회지
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• 제13권2호
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• pp.29-35
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• 2014

In this study general solar cell production process was complemented, with research on improvement of solar cell efficiency through surface structure and thermal annealing process. Firstly, to form the pyramid structure, the saw damage removal (SDR) processed surface was undergone texturing process with reactive ion etching (RIE). Then, for the formation of smooth pyramid structure to facilitate uniform doping and electrode formation, the surface was etched with HND(HF : HNO3 : D.I. water=5 : 100 : 100) solution. Notably, due to uniform doping the leakage current decreased greatly. Also, for the enhancement and maintenance of minority carrier lifetime, antireflection coating thermal annealing was done. To maintain this increased lifetime, front electrode was formed through Au plating process without high temperature firing process. Through these changes in two processes, the leakage current effect could be decreased and furthermore, the conversion efficiency could be increased. Therefore, compared to the general solar cell with a conversion efficiency of 15.89%, production of high efficiency solar cell with a conversion efficiency of 17.24% was made possible.

• 전기의세계
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• 제25권5호
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• pp.63-69
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• 1976

Among various types of photo-electric energy conversion element which can transfer solar energy into electric energy through the photo voltaic effect, Si solar cells were investigated on photoelectric characteristics, improvements of its efficiency and economical evaluation for its production cost. To study the above subjects, we decided best conditions on fabricating of thin film Si solar cell by epitaxial growth and knew that the thin solar cell by epitaxial growth was more efficient than that by diffusion process. And also higher photo voltaic output was obtained as a effect of SiO as antireflection coating by several methods, i.e. vacuum evaporating techniques of electrode to decrease the contact resistance and to form best ohmic contact, and concentration techniques of sun's ray by lenz or both-sided illumination through special structure for reflection using mirrors.

• ETRI Journal
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• 제24권5호
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• pp.341-348
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• 2002

We propose an asymmetric sampled grating laser and a multi-wavelength laser array associated with it. Asymmetric sampling periods combined with an index shifter make it possible to use first order reflection for lasing operations. With the structure of our design, we achieved a simple fabrication procedure as well as a high yield without using complex and time-consuming e-beam lithography for multi-period gratings. We analyzed the effect of mirror coating by numerical analysis to improve single mode and power extraction performance. By using high reflection-antireflection coatings, we obtained high power extraction efficiency without degradation of the single mode property. For the multi-wavelength laser array, to gain wavelength control, we varied the sampling periods from one laser to an adjacent laser across the array. With this approach, we showed the feasibility of an array of up to 30 channels with 100 GHz wavelength spacing.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2012년도 춘계학술발표대회
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• pp.110.2-110.2
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• 2012

We reported on antireflective ZnSnO (ZTO)/Ag bilayer and ZTO/Ag/ZTO trilayer source/drain (S/D) electrodes for all-transparent ZTO channel based thin film transistors (TFTs). The ZTO/Ag bilayer is more transparent (83.71%) and effective source/drain (S/D) electrodes for the ZTO channel/Al2O3 gate dielectric/ITO gate electrode/glass structure than ZTO/Ag/ZTO trilayer because the bottom ZTO layer in the trilayer increasea contact resistance between S/D electrodes and ZTO channel layer and reduce the antireflection effect. The ZTO based all-transparent TFTs with ZTO/Ag bilayer S/D electrode showed a saturation mobility of 4.54cm2/Vs and switching property (1.31V/decade) comparable to TTFT with Ag S/D electrodes.