• 한국재료학회지
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• 제13권12호
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• pp.801-805
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• 2003

To explore the annealing temperature dependence of dielectric properties $Ta_2$$O_{5}$ thin films were prepared by MOCVD(metal-organic chemical vapor deposition) and MOD(metal-organic decomposition). The $Ta_2$$O_{5}$thin films fabricated MOCVD and MOD were annealed in $O_2$at temperature between 600 and 90$0^{\circ}C$. The measured dielectric constant of both films at 100 KHz was the highest value at $650^{\circ}C$ and decreased with increasing annealing temperature above $650^{\circ}C$. Plane-view SEM image showed that the boundary seems to be crack broke out with increasing annealing temperature. It was confirmed that outbreak of boundary influenced a decrease of dielectric constant with increasing annealing temperature. The leakage current density increased with increasing annealing temperature.

• 폴리머
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• 제27권2호
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• pp.113-119
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• 2003

폴리(에틸렌 테레프탈레이트) (PET)의 열처리 조건들 즉, 상대 습도, 온도 그리고 시간 등에 따라 나타나는 PET의 열적 특성과 결정화 거동에 대해서 연구하였다. PET샘플에 열처리를 수행한 후 수분 함유량, 유리 전이온도($T_g$), 그리고 결정화 온도($T_{\propto}$) 등의 변화를 조사하였다. 그리고 열처리된 PET시편에 대해서 결정화를 시키고 결정화도에 따른 열변형 온도(HDT)를 측정하였다. 또한 사출 성형으로 제작된 PET샘플의 열처리 후 잔류 응력의 완화를 편광 필름을 통하여 조사하였다. 열처리 시의 상대 습도, 온도, 그리고 시간이 증가함에 따라 PET샘플 내의 수분 함유량은 최대 6000 ppm이상 까지 증가하였다. $T_g$와 $T_c$는 시편 내에 수분 함유량이 증가할수록 감소하였다. PET샘플의 결정화도는 수분의 함유량이 증가함에 따라 증가되었다. 그러나 같은 양의 수분 함량에서 결정화도는 열처리의 조건에 따라 다르게 나타났다. PET샘플 내의 잔류응력의 완화는 열처리 조건에 따라 다르게 나타났으며, PET샘플 내에 잔류 응력이 감소할수록 최대 결정화도는 증가하였다.

• Transactions on Electrical and Electronic Materials
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• 제12권3호
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• pp.127-130
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• 2011

We investigated the effects of $O_2$ annealing (i.e., temperature and time) on the characteristics of hafnium silicate ($HfSi_xO_y$) films deposited on a Si substrate by atomic layer deposition process (ALD). We found that the post deposition annealing under oxidizing ambient causes the oxidation of residual Hf metal components, resulting in the improvement of electrical characteristics (e.g., hysteresis window and leakage current are decreased). In addition, we observed the annealing temperature is more important than the annealing time for post deposition annealing. Based on these observations, we suggest that post deposition annealing under oxidizing ambient is necessary to improve the electrical characteristics of $HfSi_xO_y$ films deposited by ALD. However, the annealing temperature has to be carefully controlled to minimize the regrowth of interfacial oxide, which degrades the value of equivalent oxide thickness.

• Preventive Nutrition and Food Science
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• 제4권4호
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• pp.215-220
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• 1999

The Physical properties of corn starch were investigated by scanning electron microscopy, X-ray diffractometry and differential scanning calorimetry during the formation of enzyme-resistant starch(RS). Samples were studied in their native states and after annealing at 50, 55, 60 and 65℃ in excess water(starch : water=1:3) for 48hr. Starch granules became smaller and more rounded after annealing than in their native state. Annealing did not change the X-ray profile of native corn starch. After autoclaving-cooling cycles, native starch lost most of its crystallinity but annealed ones showed some of their crystallinity left as diffuse or poor B-type, which didn't relate to increasing Rs yields. During formation of RS, however, both native and annealed starches changed their X-ray profile from A-type to poor B-type of retrograded amylose. Annealing caused an increase in gelatinization temperature and enthalpy, but a narrowing of gelatinization temperature range. Only starch annealed at 65℃, however, showed a decrease in enthalpy even though its gelatinization temperature increased, which appeared to be due to the partial gelatinization in the amorphous region during annealing. Peak height index(PHI), the ratio of ΔH to Ti-To, increased by annealing. PHI values, therefore, showed the possibility as an indicator to predict RS yield which cannot be differentiated by differential scanning calorimetry and X-ray diffraction data.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.224-225
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• 2007

The Low dielectric properties of epoxy/Annealing $SiO_2$ composites using Annealing new material of nanosized amorphous particles were investigated as function frequency, temperature and filler contents composition. The dielectric constant decrease with increasing frequency and also increase with increasing ambient temperature. The dielectric constant decrease with increase annealing filler contents for epoxy base. The result of x-ray diffraction could obtained single crystal of annealing $SiO_2$ from 500nm amorphous $SiO_2$ powder.

• 열처리공학회지
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• 제21권6호
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• pp.307-313
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• 2008

The tensile deformation and shape recovery behaviors were studied in Ni-Ti shape memory wires showing different transformation characteristics by annealing at $200{\sim}600^{\circ}C$. Both R phase ${\rightarrow}$ B19' martensitic transformation at lower temperature and B2 ${\rightarrow}$ R phase transformation at higher temperature occurred in the shape memory wires annealed at $200{\sim}500^{\circ}C$. Transformation temperature and heat flow of B19' martensite increase but those of R phase main almost constant even with increasing annealing temperature. In the case of wires annealed and then cooled to $20^{\circ}C$, plateau on stress-strain curves in tensile testing can be observed due to the collapse of R phase variants and the formation of deformation-induced B19' martensite. In the case of wires annealed and then cooled to $-196^{\circ}C$, however, plateau on stress-strain curves does not appear and stress increases steadily with increasing tensile deformation. Comparing shape recovery rate with cooling temperature after annealing, shape recovery rate of the wire cooled to $20^{\circ}C$ is higher than that of the wire cooled to $-196^{\circ}C$ after annealing, and maximum shape recovery rate of 95% appears in the wire annealed at $400^{\circ}C$ and then cooled to $20^{\circ}C$. $R_s$ and $R_f$ temperatures measured during shape recovery tests are higher than $A_s$ and $A_f$ temperatures measured by DSC tests even at the same annealing temperature.

• Transactions on Electrical and Electronic Materials
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• 제11권2호
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• pp.73-76
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• 2010

The copper indium disulfide ($CuInS_2$) thin film was manufactured using sputtering and thermal evaporation methods, and the annealing with sulfurization process was used in the vacuum chamber to the substrate temperature on the glass substrate, the annealing temperature and the composition ratio, and the characteristics thereof were investigated. The $CuInS_2$ thin film was manufactured by the sulfurization of a soda lime glass (SLG) Cu/In/S stacked [1] elemental layer deposited on a glass substrate by vacuum chamber annealing [2] with sulfurization for various times at a temperature of substrate temperature of $200^{\circ}C$. The structure and electrical properties of the film was measured in order to determine the optimum conditions for the growth of $CuInS_2$ ternary compound semiconductor $CuInS_2$ thin films with a non-stoichiometric composition. The physical properties of the thin film were investigated under various fabrication conditions [3,4], including the substrate temperature, annealing temperature and annealing time by X-ray diffraction (XRD), field Emission scanning electron microscope (FE-SEM), and Hall measurement systems. [5] The sputtering rate depending upon the DC/RF power was controlled so that the composition ratio of Cu versus In might be around 1:1, and the substrate temperature affecting the quality of the film was varied in the range of room temperature (RT) to $300^{\circ}C$ at intervals of $100^{\circ}C$, and the annealing temperature of the thin film was varied RT to $550^{\circ}C$ in intervals of $100^{\circ}C$.

• 한국식품과학회지
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• 제34권3호
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• pp.431-436
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• 2002

보통 옥수수 전분을 이용하여 저항전분을 제조할 때 저항 전분의 수율을 높일 수 있는 방법을 개발하기 위한 목적으로 가교결합 전분을 제조하고 annealing처리를 병행하였다. Annealing은 $40{\sim}60^{\circ}C$ 범위에서 실시하였고, 이와 비교하기 위하여 $70^{\circ}C$와 $100^{\circ}C$에서 열처리한 후 가교결합 전분을 제조하였다. RS 분석방법으로는 pancreain-gravimetric법(P/G법)을 사용하였다. 보통 옥수수전분과 고아밀로오스 옥수수전분으로 annealing하지 않고 가교결합 전분을 제조했을 때의 RS수율은 각각 14.7, 45.3%였고, annealing 한 후 가교결합 전분을 제조했을 때 28.0, 63.4%까지 증가하였다. 가교결합 전분의 팽윤력은 annealing 처리에 의해 영향받지 않았으나, 보통 옥수수전분으로 제조한 시료의 경우는 호화온도이상에서 열처리했을 때 팽윤력이 2배이상 증가하였다. 두가지 전분으로부터 제조된 가교결합 전분의 X-선 회절도와 주사전자현미경에 의한 특성 역시 annealing에 의해 영향받지 않았다.

• Progress in Superconductivity
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• 제1권1호
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• pp.9-13
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• 1999

The influence of quenching temperature and annealing time on superconducting characteristics has been investigated for a $(Pb_{0.6}V_{0.4})Sr_2(Ca_{0.65}Er_{0.35})Cu_2O_z$ compound. From the resistivity measurements for samples annealed at $400^{\circ}C$ to $860^{\circ}C$ in oxygen and subsequently quenched, it is observed that $T_c$(zero) of the sample decreases with the increase of annealing temperature up to $600^{\circ}C$ and increases again beyond $700^{\circ}C$. Annealings of the sample at $860^{\circ}C$ show that $T_c$(zero) goes through a maximum of 62K with the increase of the annealing time. It is also found that $T_c$(zero) of the sample quenched from high temperature decreases when the sample is subjected to low temperature annealing below. $600^{\circ}C$ in oxygen. The experimental results indicate that the as-prepared samples contain excessive oxygen and removal of this excessive oxygen in as-prepared samples is a key factor in controlling the superconducting properties of the samples and are discussed in connection with thermal gravimetric measurements.

• 한국의류산업학회지
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• 제9권3호
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• pp.347-350
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• 2007

To analyse basic properties for making packing batt according to doubling condition, packing batt yarn, of $300^D$, $900^D$, $3600^D$ made from DTY yarn $150^D$/48 were produced from KTDI. The results are as follows: The birefringence of the sample yarn increased with increasing the annealing temperature and denier. The initial modulus of the sample yarn decreased with increasing the annealing temperature and denier. The higher than annealing temperature of $160^{\circ}C$, initial modulus of the sample are equilibrated. The strain recovery ratio of samples decreased with increasing the annealing temperature and denier. The lower than annealing temperature of $140^{\circ}C$, strain recovery ratio of the sample are decreased Where the $900^D$, $3600^D$ yarns are at $100^{\circ}C$ the specific bending rigidity value obtained is 0.65kgf/d but the twisted yarn (3,600) obtained 0.006 ($gfcm^2/tex^2$). However, where the heat temperature is $160^{\circ}C$, specific bending rigidity value obtained 0.003($gfcm^2/tex^2$).