• Electrical & Electronic Materials
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• v.7 no.2
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• pp.152-156
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• 1994

The rapid thermal annealing effects of Sol-Gel derived ferroelectric PZT thin films were investigated. It was found that rapid thermal annealing(RTA) of spin coated thin films on silicon typically >$800^{\circ}C$ for about 1 min. was changed to the perovskite phase. Rapid thermally annealed films recorded maximum remanent polarization of about 5 .mu.C/cm$^{2}$, coercive field of around 30kV/cm. The switching time for polarization reversal was about 220ns. The films of RTA process showed smooth surface, and high breakdown voltages of over 1 MV/cm and resistivity of $1{\times}{10^12}$ .ohm.cm at 1 MV/cm. It was verified that the polarization reversal of the PZT film was varied partially with applying the multiple short pulse.

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1498-1499
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• 1998

Thin film inductors of 10 mm ${\times}$ 10 mm with spiral pattern of 14 turns were fabricated by sputtering, photo-masking, and etching processes. Their impedence characteristics and annealing after effects were investigated. After magnetic annealing, the impedence characteristics of the inductors were improved at comparatively low frequencies, but the tendencies of it for thr frequency changes were almost same. These improvement was caused by the annihilation of the internal stresses of films, Uniaxial field annealed thin film inductor had an inductance of 1000 nH, resistance of 6 $\Omega$, and quality factor of 1 at 2 MHz.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.126-127
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• 2008

The effects annealing conditions on the electrical conductions of SOI substrate were studied. The reversible change of resistance and carrier concentration in accordance with the annealing temperature were observed for the first time in SOI substrate. The thermal donors due to interstitial oxygen atoms contribute the change of resistance and carrier concentration. Final1y, we show that the furnace annelaing at $500^{\circ}C$ at final heat treatment stage is effective for eliminate the thermal donor effects in SOI substrate.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1679-1681
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• 1996

ZnO varistor with composition of 89wt%-ZnO, 3.0wt%-$Bi_{2}O_{3}$, 3.6wt%-$Sb_{2}O_{3}$, 1.16wt%-CoO, 0.88wt%-NiO, 0.71wt%-$MnO_2$, 0.93wt%-$Cr_{2}O_{3}$, 0.013wt%-$Al_{2}O_{3}$ was fabricated by sintering methods. The effects of annealing on the J-E characteristics of ZnO varistors were investigated. These changes of electric properties were found to be caused by the variation of grains and grain boundary related to annealing. And the conductive mechanism and micostructure of ZnO varistor were researched using I-V meter, SEM and XRD.

• Journal of the Korean Magnetics Society
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• v.16 no.1
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• pp.71-74
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• 2006

Transport and tunneling measurements of nanostructured superconducting thin films are presented. To understand the effects of film morphology on their superconducting properties, thermal annealing experiments have been performed. The transition temperature increases with thermal annealing temperature towards the bulk value. Also, thermal annealing results in a shift of transverse phonon mode. These can be understood with changes in film morphology and suggest its importance on the superconducting state properties.

• Korean Membrane Journal
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• v.10 no.1
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• pp.39-45
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• 2008

Polyelectrolyte complex based on two anionic polysaccharides, composed of sodium alginate and carrageenan, were prepared by interacting with divalent calcium ions in solution. The effects of annealing on the structural deformation of polyelectrolyte complex and on their characteristics at removing water from a methanol mixture from the point of molecular sieve were investigated and discussed. The result showed that the structural deformation of the annealed polyelectrolyte complex has an effect on the free volume between these polymer chains and the chelate segments such a shrinking of the overall morphology, which act as a molecular sieve in the separation of methanol and water mixtures.

• Electrical & Electronic Materials
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• v.9 no.10
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• pp.1013-1018
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• 1996

The annealing effects of Au/Te/Au/n-GaAs structure was investigated by using x-ray diffraction, scanning electron microscope, the specific contact resistance and I-V measurement. Increasing the annealing temperature, the intensity of Au-Ga peak by X-ray diffraction was increased. The Ga$\_$2/Te$\_$3/peak got evident for the samples annealed at 400.deg. C and GaAs peak by recrystallization appeared for the samples annealed at 500.deg. C. The variation from the schottky to low resistance contact was confirmed by I-V curve. The lowest value of the specific contact resistance of the samples annealed at 500.deg. C was 3.8*10$\^$-5/.ohm.-cm$\^$2/ but the value increased above 600.deg. C.

• Korean Journal of Materials Research
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• v.28 no.4
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• pp.195-200
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• 2018

This study investigated the effects of the post annealing temperatures on the electrical and interfacial properties of a metal-semiconductor-metal photodetector(MSM-PD) device. The interdigitate type MSM-PD devices had the structure Al(500 nm) / Ti(200 nm) / poly-Si(500 nm). Structural analyses of the MSM-PD devices were performed by employing X-ray diffraction(XRD), scanning electron microscopy(SEM) and transmission electron microscope(TEM). Electrical characteristics of the MSM-PD were also examined using current-voltage(I-V) measurements. The optimal post annealing condition for the Schottky contact of MSM-PD devices are $350^{\circ}C$-30minutes. However, as the annealing temperature and time are increased, electrical characteristics of MSM-PD device are degraded. Especially, for the annealing conditions of $400^{\circ}C$-180minutes and $500^{\circ}C$-30minutes, the I-V measurement itself was impossible. These results are closely related to the solid phase reactions at the interface of MSM-PD device, which result in the formation of intermetallic compounds such as $Al_3Ti$ and $Ti_7Al_5Si_{12}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.270-271
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• 2008

Antimony (6 wt%) doped tin oxide (ATO) films to improve conductivity were deposited on 7059 coming glass by RF magnetron sputtering method for application to transparent electrodes. The ATO film was deposited at a working pressure of 5 mTorr and RF power of 175 W. We investigated the effects of the post-annealing temperature on structural, electrical and optical properties of the ATO films. The films were annealed at temperatures ranging from $300^{\circ}C$ to $600^{\circ}C$ in step of $100^{\circ}C$ using RTA equipment in vacuum ambient. X-ray diffraction (XRD) measurements showed the ATO films to be crystallized with a strong (101) preferred orientation as the annealing temperature increased. Electrical resistivity decreased significantly with annealing temperatures up to $600^{\circ}C$. ATO film annealed at temperature of $600^{\circ}C$ showed the lowest resistivity of $5.6\times10^{-3}\Omega$-cm. Optical transmittance increased significantly with annealing temperatures up to $600^{\circ}C$. The highest transmittance was 90.8 % in the visible range from 400 to 800 nm.

• Journal of the Korean Vacuum Society
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• v.6 no.1
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• pp.28-35
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• 1997

Effects of rapid thermal annealing on the characteristics of Cu films deposited from the (hfac)Cu(VTMS) precursor and on the barrier properties of TiN layers were studied. By the post-annealing, the electrical characteristics of Cu/TiN and the microstructures of Cu films were significantly changed. The properties of Cu films were more sensitive to the annealing temperature than the annealing time. Sheet resistance started to increase above $400^{\circ}C$, and the interreaction between Cu and Ti and the oxidation of Cu layer were observed above $600^{\circ}C$. The grain growth of Cu with the (111) preferred orientation was found to be most pronounced at $500^{\circ}C$. It revealed that the optimum annealing conditions for MOCVD-Cu/PVD-TiN structures to enhance the electrical characteristics without degradation of TiN barriers were in the range of $400^{\circ}C$.