• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2004.08a
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• pp.233-239
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• 2004

The effect of annealing temperature on microstructures and mechanical properties of the sheets received $88\%$ reduction at cryogenic temperature was investigated for the annealing temperature of $150\~300^{\circ}C$, in comparison with those at room temperature. The presence of equiaxed grains, whose size is about 200nm in a diameter, was observed in 5052 Al alloy deformed $88\%$ and annealed $200^{\circ}C$ for an hour. When compared with the deformation at room temperature, the deformation at cryogenic temperature showed the higher strengths and equivalent elongation after annealing at the annealing temperature below $200^{\circ}C$. However, for annealing above $250^{\circ}C$ materials deformed at cryogenic temperature showed the lower strength than those deformed at room temperature. This behavior might be attributed to the higher rate of recrystallization and growth in materials deformed at cryogenic temperature during annealing, due to the lager density of dislocations accumulated during the deformation.

• Journal of the Korean Ceramic Society
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• v.32 no.8
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• pp.881-892
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• 1995

Sol-Gel derived ferroelectric PZT thin films were fabricated on ITO/Glass substrate. Two kinds of rapid thermal annealing methods, R-I (six times of intermediate and final annealing) and R-II (one final annealing after six times of intermediate annealing) were used for preparation of multi-coated PZT thin films. 2500$\AA$-thick PZT thin films were obtained by the R-I and R-II methods and characterized by microstructure and dielectric properties. In case of using R-II, the microstructure was finer than that of R-I and there was no distinguishable difference in dielectric properties of PZT thin films between the R-I and R-II methods. But dielectric properties were enhanced by increasing perovskite phase fraction with increasing annealing temperature. Measured dielectric constant of PZT thin film annealed at 62$0^{\circ}C$ using the R-I method was 256 at 1kHz. Its remanant polarization (Pr) and coercive field (Ec) were 14.4$\mu$C/$\textrm{cm}^2$ and 64kV/cm, respectively.

• Journal of the Korean Society for Heat Treatment
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• v.19 no.5
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• pp.270-279
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• 2006

The effects of eight types of spheroidizing annealing conditions including annealing temperature, annealing time, cooling rate, and furnace atmosphere on the microstructure and hardeness were determined in SCM440 steel which has been widely used for automotive parts. The well-spheroidized structure and minimum hardness were obtained when the steel was heat-treated at $770^{\circ}C$ for 6 hours, cooled to $720^{\circ}C$ at a cooling rate of $24^{\circ}C/h$, and then kept for 7 hours at the $720^{\circ}C$ followed by air cooling. In order to increase the productivity and to save the manufacturing cost, it is desirable to apply a faster cooling rate to the spheroidizing annealing. It was found that a cooling rate of $100^{\circ}C/hr$ was the fastest cooling rate applicable to the SCM440 steel among the four cooling rates used in this study. The microstructure consisted of ferrite and very fine spheroidized cementite when the steel was annealed for 13 hours at $720^{\circ}C$ below $A_{C1}$ temperature. This was caused by the short annealing time and the retarding effect of Cr and Mo on both the dissolution of pearlite to cementite and coarsening of spheroidized cementite. The steel heat treated in air showed the decarburized layer of about $125{\mu}m$ in thickness at the surface.

• Journal of Electrical Engineering and Technology
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• v.12 no.6
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• pp.2353-2358
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• 2017

A femtosecond laser pre-annealing process based on indium zinc oxide (IZO) thin-film transistors (TFTs) is fabricated. We demonstrate a stable pre-annealing process to analyze surface structure change of thin films, and we maintain electrical stability and improve electrical performance. Furthermore, dynamic electrical characteristics of the IZO TFTs were investigated. Femtosecond laser pre-annealing process-based IZO TFTs exhibit a field-effect mobility of $3.75cm^2/Vs$, an $I_{on}/I_{off}$ ratio of $1.77{\times}10^5$, a threshold voltage of 1.13 V, and a subthreshold swing of 1.21 V/dec. And the IZO-based inverter shows a fast switching behavior response. From this study, IZO TFTs from using the femtosecond laser annealing technique were found to strongly affect the electrical performance and charge transport dynamics in electronic devices.

• Journal of Powder Materials
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• v.15 no.1
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• pp.18-22
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• 2008

The electromagnetic (EM) wave absorption properties with a variation of crystallization annealing temperature have been investigated in a sheet-type absorber using the $Fe_{73}Si_{16}B_7Nb_3Cu_1$ alloy powder. With increasing the annealing temperature the complex permeability (${\mu}_r$), permittivity (${\varepsilon}_r$) and power absorption changed. The EM wave absorber shows the maximum permeability and permittivity after the annealing at $610^{\circ}C$ for 1 hour, and its calculated power absorption is above 80% of input power in the frequency range over 1.5 GHz.

• Journal of Powder Materials
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• v.3 no.2
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• pp.91-96
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• 1996

The effect of vacuum annealing on the oxidation behavior of milled WC-15%Co powder mixture has been studied. A cobalt component in the milled powder mixture was oxidized preferentially above 175$^{\circ}C$ in air. The specimens showed a steady increase in weight at 175$^{\circ}C$ but did constant weight followed by rapid increase in specimen weight at the beginning above 20$0^{\circ}C$. Oxidation of the milled powder mixture was significantly suppressed by vacuum annealing at 30$0^{\circ}C$ for 10 h. Suppression of oxidation by vacuum annealing and different oxidation behaviors of the milled powder mixture between 175$^{\circ}C$ and 20$0^{\circ}C$, were attributed to removal of strain energy stored in the cobalt powder during vacuum annealing or oxidation treatment above 20$0^{\circ}C$. The role of stored strain energy on oxidation of milled WC-15%Co powder mixture was proved by X-ray diffraction method and differential thermal analysis.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.10
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• pp.864-868
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• 2007

Effect of high-temperature annealing on morphology of fully coherent self-assembled InAs quantum dots' grown on Si (100) substrates at $450^{\circ}C$ by atmospheric pressure metalorganic chemical vapor deposition(APMOCVD) was investigated by atomic force microscopy(AFM). When the dots were annealed at 500 - 600$^{\circ}C$ for 15 sec - 60 min, there was no appreciable change in the dot density but the heights of the dots increased along with the reduction in the diameters. In segregation from the InAs quantum dots and/or from the 2-dimensional InAs wetting layer which was not transformed into quantum dots looked responsible for this change in the dot size. However the change rates remained almost same regardless of annealing time and temperature, which may indicate that the morphological change due to thermal annealing is done instantly when the dots are exposed to high temperature annealing.

• Proceedings of the Korean Society of Marine Engineers Conference
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• 2006.06a
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• pp.95-96
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• 2006

ALDC 12 Al alloy is often corroded with some forms such as pitting corrosion, intergranular corrosion, and galvanic corrosion etc., in case of severe corrosion environment like seawater Annealing heat treatment was performed to improve the corrosion resistance of ALDC 12. Hardness was decreased with increasing of annealing temperature, however its corrosion resistance was clearly improved with increasing of annealing temperature.

• ETRI Journal
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• v.13 no.2
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• pp.21-27
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• 1991

Effects of annealing on the dielectric properties and microstructures of thin tantalum oxide film(25nm) deposited on p-type Si substrate with rf reactive magnetron sputtering were investigated. The leakage current density was remarkably reduced from $10^-8$ to $10^-12$ A/$\mum^2$at the electric field of 2MV/cm after rapid thermal annealing(RTA) in $O_2$at $1000^{\circ}C$, while little leakage reduction was observed after furnace annealing in $O_2$ at $500^{\circ}C$. The structural changes of thin tantalum oxide film after annealing were examined using high resolution electron microscope(HREM). The results of HREM show that substantial reduction in the leakage current density after the RTA in $O_2$ can be attributed to crystallization and reoxidation of the thin amorphous tantalum oxide film.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2007.10a
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• pp.120-123
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• 2007

The effects of annealing condition on the occurrence of the delamination in cold drawn hyper-eutectoid steel wires, were investigated. Annealing treatment was performed on cold drawn steel wires for temperature range of $425^{\circ}C\sim500^{\circ}C$ with the variation of annealing time from 30sec to 15min. The increase of annealing temperature and time would cause the decrease of tensile strength and the increase of ductility. However, the occurrence of the delamination, representing torsional ductility, showed the different way from the variation of ductility.