• Tribology and Lubricants
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• v.33 no.5
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• pp.228-233
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• 2017

Chemical Mechanical Polishing of chemically stable sapphire substrates is dominantly affected by the mechanical processing of abrasives, in terms of the material removal rate. In this study, we investigated the effect of electrostatic force between the abrasives and substrate, on the polishing. If potassium chloride (KCl) is added to slurry, water molecules are decomposed into $H^+$ and $OH^-$ ions, and the amount of ions in the slurry changes. The zeta potential of the abrasives decreases with an increase in the amount of $H^+$ ions in the stern layer; consequently, the electrostatic force between the abrasives and substrate decreases. The change in zeta potential of abrasives in the slurry is affected by the slurry pH. In acidic zones, the amount of ions bound to the abrasives increases if the amount of $H^+$ ions is increased by adding KCl. However, in basic zones, there is no change in the corresponding amount. In acidic zones, zeta potential decreases as molar concentration of potassium increases; however, it does not change significantly in basic zones. The removal rate tends to decrease with increase in molar amount of potassium in acidic zones, where zeta potential changes significantly. However, in basic zones, the removal rate does not change with zeta potential. The tendencies of zeta potential and that of the frictional force generated during polishing show strong correlation. Through experiments, it is confirmed that the contact probability of abrasives changes according to the electrostatic force generated between the abrasives and substrate, and variation in removal rate.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.10
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• pp.1041-1048
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• 2004

Chemical mechanical polishing (CMP) process was studied in terms of tribology in this paper. CMP performed by the down force and the relative motion of pad and wafer with slurry is typically tribological system composed of friction, wear and lubrication. The piezoelectric quartz sensor for friction force measurement was installed and the friction force was detected during CMP process. Various friction signals were attained and analyzed with the kind of pad, abrasive and abrasive concentration. As a result of experiment, the lubrication regime is classified with ηv/p(η, v and p; the viscosity, relative velocity and pressure). The characteristics of friction and material removal mechanism is also different as a function of the kind of abrasive and the abrasive concentration in slurry. Especially, the material removal per unit distance is directly proportional to the friction force and the non~uniformity has relation to the coefficient of friction.

• Tribology and Lubricants
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• v.33 no.3
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• pp.106-111
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• 2017

Sapphire is an anisotropic material with excellent physical and chemical properties and is used as a substrate material in various fields such as LED (light emitting diode), power semiconductor, superconductor, sensor, and optical devices. Sapphire is processed into the final substrate through multi-wire saw, double-side lapping, heat treatment, diamond mechanical polishing, and chemical mechanical polishing. Among these, chemical mechanical polishing is the key process that determines the final surface quality of the substrate. Recent studies have reported that the material removal characteristics during chemical mechanical polishing changes according to the crystal orientations, however, detailed analysis of this phenomenon has not reported. In this work, we carried out chemical mechanical polishing of C(0001), R($1{\bar{1}}02$), and A($11{\bar{2}}0$) substrates with different sapphire crystal planes, and analyzed the effect of crystal orientation on the material removal characteristics and their correlations. We measured the material removal rate and frictional force to determine the material removal phenomenon, and performed nano-indentation to evaluate the material characteristics before and after the reaction. Our findings show that the material removal rate and frictional force depend on the crystal orientation, and the chemical reaction between the sapphire substrate and the slurry accelerates the material removal rate during chemical mechanical polishing.

• Laser Solutions
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• v.5 no.2
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• pp.9-15
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• 2002

Basic principles and unique characteristics of laser-induced shock cleaning have been described compared to a conventional laser cleaning method and the removal of small tungsten particles from silicon wafer surfaces was attempted using both methods. It was found that the conventional laser cleaning was not feasible to remove the tungsten particles whereas a successful removal of the particles was carried out by the laser-induced shock waves. From the quantitative analysis using a surface scanner, the average removal efficiency of the particles was more than 98% where smaller particles were slightly more difficult to remove probably due to the increased adhesion force with a decrease of the particle size. It was also seen that the gap distance between the laser focus and the wafer surface is an important processing parameter since the removal efficiency is strongly dependent on the gap distance.

• The korean journal of orthodontics
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• v.23 no.3 s.42
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• pp.295-309
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• 1993

The purpose of this study was to investigate the effect of jaw growth in a growing rabbits, when they are subjected to refractive force and after removal of refractive force. The experimental animals were Oryctolagus couniculus, male rabbits of 4 weeks of age. The mandible is retracted with 200gm in force of each side to the posterior and superior direction for 14 hours a day. Then rabbits were used as control group. First experimental group received refractive force for 4 weeks. Second experimental group received for 8 weeks. Third experimental group received for 12 weeks. True lateral films and dorso-ventral films were taken before wearing appliances, 4 weeks, 8 weeks, 12 weeks and 16 weeks after wearing appliance. The changes of rabbits jaw growth were observed radiographically. The findings were as follows : 1. Mandibular refractive force decreased total mandibular length, mandibular condylar length and angular length. 2. Mandibular refractive force increased nasal height, condylar width and angular width. 3. Mandibular refractive force decreased mandibular lenght growth but increased mandibular width growth. 4. There is no phenomena of catch-up growth after refractive force removal.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.34.2-34.2
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• 2011

The demand for Ru has been increasing in the electronic, chemical and semiconductor industry. Chemical mechanical planarization (CMP) is one of the fabrication processes for electrode formation and barrier layer removal. The abrasive particles can be easily contaminated on the top surface during the CMP process. This can induce adverse effects on subsequent patterning and film deposition processes. In this study, a post Ru CMP cleaning solution was formulated by using sodium periodate as an etchant and citric acid to modify the zeta potential of alumina particles and Ru surfaces. Ru film (150 nm thickness) was deposited on tetraethylorthosilicate (TEOS) films by the atomic layer deposition method. Ru wafers were cut into $2.0{\times}2.0$ cm pieces for the surface analysis and used for estimating PRE. A laser zeta potential analyzer (LEZA-600, Otsuka Electronics Co., Japan) was used to obtain the zeta potentials of alumina particles and the Ru surface. A contact angle analyzer (Phoenix 300, SEO, Korea) was used to measure the contact angle of the Ru surface. The adhesion force between an alumina particle and Ru wafer surface was measured by an atomic force microscope (AFM, XE-100, Park Systems, Korea). In a solution with citric acid, the zeta potential of the alumina surface was changed to a negative value due to the adsorption of negative citrate ions. However, the hydrous Ru oxide, which has positive surface charge, could be formed on Ru surface in citric acid solution at pH 6 and 8. At pH 6 and 8, relatively low particle removal efficiency was observed in citric acid solution due to the attractive force between the Ru surface and particles. At pH 10, the lowest adhesion force and highest cleaning efficiency were measured due to the repulsive force between the contaminated alumina particle and the Ru surface. The highest PRE was achieved in citric acid solution with NaIO4 below 0.01 M at pH 10.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.6
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• pp.1146-1150
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• 2009

Cadmium telluride (CdTe) is one of the most attractive photovoltaic materials due to its low cost, high efficiency and stable performance in physical, optical and electronic properties. Few researches on the influences of uniform surface on the photovoltaic characteristics in large-area CdTe solar cell were not reported. As the preceding study of the effects of thickness-uniformity on the photovoltaic characteristics for the large-area CdTe thin film solar cell, chemical mechanical polishing (CMP) process was investigated for an enhancement of thickness-uniformity. Removal rate of CdTe thin film was 3160 nm/min of the maximum value at the 200 $gf/cm^2$ of down force (pressure) and 60 rpm of table speed (velocity). The removal rate of CdTe thin film was more affected by the down force than the table speed which is the two main factors directly influencing on the removal rate in CMP process. RMS roughness and peak-to-valley roughness of CdTe thin film after CMP process were improved to 96.68% and 85.55%, respectively. The optimum process condition was estimated by 100 $gf/cm^2$ of down force and 60 rpm of table speed with the consideration of good removal uniformity about 5.0% as well as excellent surface roughness for the large-area CdTe solar cell.

• Journal of the Korea Institute of Military Science and Technology
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• v.11 no.6
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• pp.156-163
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• 2008

Future Combat System(FCS), such as unmanned systems that reduce the danger faced by soldiers in the field, are likely to be studied and developed. Soldiers when finding and disposing of mines risk injury and death. Several methods of safe mine retrieval are investigated. In this paper, a mine removal method, which uses a remote controlled robot to get rid of mines using a 4 channel architecture teleoperation method is used. The robot, when in contact with soil and mines, is controlled by a remote control. The feasibility of using teleoperation controlled system to remove mines is demonstrated in this paper. The Matlab-Simulink was used as a tool to simulate mine removal with robots. The force and position of the robot{slave system of 4 channel architecture) and controller(master system of 4 channel architecture) are analyzed when users handle the controller with sinusoidal force.

• The korean journal of orthodontics
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• v.49 no.2
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• pp.106-115
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• 2019

Objective: This study aimed to evaluate the effects of force loading on root damage caused by contact with temporary anchorage devices (TADs) during orthodontic treatment and to examine the repair process 4, 8, and 12 weeks after TAD contact by micro-computed tomography (CT). Methods: We enrolled 42 volunteers who required bilateral upper first premolar extractions. The experimental study design was as follows. For both first premolars, cantilever springs were placed, and then TADs were immediately inserted between the premolars of all volunteers. According to the removal order of the appliances, the participants were divided into the TAD group (Group T: n = 21, only TAD removal) and the spring group (Group S: n = 21, only spring removal). A splitmouth design was adopted in both groups as follows. For each volunteer, the left premolars were extracted 4, 8, or 12 weeks after TAD-root contact. The right premolars were extracted immediately after contact in both groups (Groups T-C and S-C) and used as positive controls. Resorption volumes and numbers of craters were determined by micro-CT. Results: The numbers of resorption craters were higher in Group T than in Group S at 8 and 12 weeks (p < 0.01). Crater volumes were higher in Group T than in Group S at 4 and 12 weeks (p < 0.01, both). Conclusions: Root injury was not completely repaired 12 weeks after root-TAD contact, even when the TADs were removed in cases of continuous force application.

• Laser Solutions
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• v.6 no.3
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• pp.29-35
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• 2003

In semiconductor processing, there are two types of particle contaminated onto the wafer, i.e. dry and wet state particles. In order to evaluate the cleaning performance of laser shock wave cleaning method, the removal of 1 m sized alumina particle at different particle conditions from silicon wafer has been carried out by laser-induced shock waves. It was found that the removal efficiency by laser shock cleaning was strongly dependent on the particle condition, i.e. the removal efficiency of dry alumina particle from silicon wafer was around 97％ while the efficiencies of wet alumina particle in DI water and IPA are 35％ and 55％ respectively. From the analysis of adhesion forces between the particle and the silicon substrate, the adhesion force of the wet particle where capillary force is dominant is much larger than that of the dry particle where Van der Waals force is dominant. As a result, it is seen that the particle in wet condition is much more difficult to remove from silicon wafer than the particle in dry condition by using physical cleaning method such as laser shock cleaning.