• Title/Summary/Keyword: analytical bias

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Simultaneous Quantification of Oleins (triolein, diolein and monoolein) in Mouse Feces using Liquid Chromatography-Electrospray Ionization/Mass Spectrometry

  • Lim, Jong-Hyun;Lee, Jeong-Ae;Jang, Yu-Ra;Chung, He-Sson;Lee, Won-Yong;Chung, Bong-Chul
    • Mass Spectrometry Letters
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    • v.3 no.3
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    • pp.68-73
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    • 2012
  • Fat malabsorption is an important cause of poor growth in infancy and childhood. Steatorrhea tests have been developed using various methods. Traditional measurements of stool fat, however, require large samples and it often takes as a week to complete the analysis. In this paper, a liquid chromatography-electrospray ionization/mass spectrometry (LC-ESI/MS) method was developed for simultaneous quantitative analysis of triacylglycerols, triolein, diolein and monoolein, in mouse feces. Moreover, the procedure was rapid, simple as well as compatible with LC-ESI/MS. Chloroform-isopropyl alcohol solution was used for fat-soluble sample extraction. After centrifugation and filtration, an analytical solution was prepared. Triolein, diolein and monoolein were separated using non-aqueous reversed-phase column with the mobile phase consisting of A (methanol) and B (acetone-isopropyl alcohol). The precision (% CV) and accuracy (% bias) of the assay were 3.8-14.7% and 85.2-114.9%, respectively. This method has been successfully applied to simultaneous determination of triolein, diolein and monoolein in feces from 30 mice. This method can therefore be applied to measure triacylglycerols in mouse feces accurately and precisely by LC-ESI/MS, thereby helping to predictive biomarker in fat malabsorption and diagnostic research.

Analysis for Gate Oxide Dependent Subthreshold Swing of Asymmetric Double Gate MOSFET (비대칭 DGMOSFET의 문턱전압이하 스윙에 대한 게이트 산화막 의존성 분석)

  • Jung, Hakkee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.18 no.4
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    • pp.885-890
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    • 2014
  • This paper has presented the change of subthreshold swings for gate oxide thickness of asymmetric double gate(DG) MOSFET, and solved Poisson equation to obtain the analytical solution of potential distribution. The Gaussian function as doping distribution is used to approch experimental results. The symmetric DGMOSFET is three terminal device. Meanwhile the asymmetric DGMOSFET is four terminal device and can separately determine the bias voltage and oxide thickness for top and bottom gates. As a result to observe the subthreshold swings for the change of top and bottom gate oxide thickness, we know the subthreshold swings are greatly changed for gate oxide thickness. Especially we know the subthreshold swings are increasing with the increase of top and bottom gate oxide thickness, and top gate oxide thickness greatly influences subthreshold swings.

A study on I-V characteristics in JBS rectifiers according to PN junction structures (JBS(Junction Barrier-controlled Schottky)정류기의 PN접합구조에 따른 I-V 특성에 관한 연구)

  • 안병목;정원채
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.13 no.1
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    • pp.13-20
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    • 2000
  • In this paper, we demonstrated an analytical description method of forward votage drop and reverse leakage current of the junction barrier controlled schottky rectifier with linearly graded junction and abrupt junction models. In this case, the vertical depths of device are 1[${\mu}{\textrm}{m}$] and 2[${\mu}{\textrm}{m}$], respectively. Through ion implantation and annealing process, we obtain the data of lateral and depth from implanted 2-dimensional profiles. Also we applied these data to models that indicate the change of depletion each on linearly-graded and abrupt juction as the forward and revers bias. After applied depletion changes to electric characteristics of JBS rectifiers, we calculated the forward I-V, the reverse leakage current and temperatures vs. power dissipations according to each junction. When we compared the rectifier with calculated and measured data, from the calculated results, forward votage drop with linearly graded junction is lower than that of abrupt junction and reverse leakage current with linearly graded junction is lower(≒1$\times$10\ulcorner times) than that of abrupt junction. Also, the power dissipations according to different juction depth(1[${\mu}{\textrm}{m}$], 2[${\mu}{\textrm}{m}$]) of device are calculated. Seeing the calculated results, we confirmed it from analytic model that the rectifier with linearly graded junction retained a low power dissipation up to 600[$^{\circ}C$] in comparison with the rectifier with abrupt junction.

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Some Insights into the Basic QA/QC for the Greenhouse Gas Analysis: Methane and Carbon Dioxide (온실가스 기기분석의 정도관리를 위한 고려사항 연구 - CH4과 CO2를 중심으로 -)

  • Jeong, Jae-Hak;Lim, Ho-Soo;Kim, Ki-Hyun;Bae, Wi-Sup;Jeon, Eui-Chan
    • Journal of Korean Society for Atmospheric Environment
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    • v.22 no.5
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    • pp.712-718
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    • 2006
  • In order to investigate the analytical uncertainties associated with sampling and analysis of major greenhouse gaseous pollutants(carbon dioxide and methane), we attempted to quantify their adsorptive loss due to the contact with the container wall(such as Tedlar bag and vial). Using the GC/FID method, some basic experimental parameters(such as reproducibility and method detection limit) have been evaluated as part of the essential QA/QC The reproducibilities of carbon dioxide and methane were estimated as 2.02 and 0.2%, respectively. In addition, method detection limits were measured as 0.61 and 0.06 ng, respectively. A test of sample loss rate has also been made for Tedlar bag and vial by assessing the absolute amount of sample loss on the wall. By transferring the samples contained in Tedlar bag to various sizes of Tedlar bags, we measured differences in the absolute loss quantity due to such transfer. In addition, we also examined such loss mechanism as a function of elapsed time and light penetration rate for vial. As results, carbon dioxide and methane have shown about 2% of sample loss due to such contact. It is also noticed that the amount of loss with vial surface is lower than that of Tedlar bag. Therefore, field collection of greenhouse gases using various container types should be made more cautiously to minimize the possibility of sample loss and bias related to such loss.

Analysis for Top and Bottom Subthreshold Swing of Asymmetric Double Gate MOSFET (비대칭 이중게이트 MOSFET에 대한 상·하단 문턱전압이하 스윙 분석)

  • Jung, Hakkee;Kwon, Ohsin
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2013.10a
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    • pp.704-707
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    • 2013
  • This paper has analyzed the subthreshold swings for top and bottom gate voltages of asymmetric double gate(DG) MOSFET. The asymmetric DGMOSFET is four terminal device to be able to separately bias for top and bottom gates. The subthreshold swing, therefore, has to be analyze not only for top gate voltage, but also for bottom gate voltage. In the pursuit of this purpose, Poisson equation has been solved to obtain the analytical solution of potential distribution with Gaussian function, and the subthreshold swing model has been presented. As a result to observe the subthreshold swings for the change of top and bottom gate voltage using this subthreshold swing model, we know the subthreshold swings are greatly changed for gate voltages. Especially we know the conduction path has been changed for top and bottom gate voltage and this is expected to greatly influence on subthreshold swings.

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Analysis for Relation of Oxide Thickness and Subthreshold Swing of Asymmetric Double Gate MOSFET (비대칭 DGMOSFET의 산화막 두께와 문턱전압이하 스윙의 관계 분석)

  • Jung, Hakkee;Cheong, Dongsoo
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2013.10a
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    • pp.698-701
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    • 2013
  • This paper has presented the change of subthreshold swings for gate oxide thickness of asymmetric double gate(DG) MOSFET, and solved Poisson equation to obtain the analytical solution of potential distribution. The symmetric DGMOSFET is three terminal device. Meanwhile the asymmetric DGMOSFET is four terminal device and can separately determine the bias voltage and oxide thickness for top and bottom gates. As a result to observe the subthreshold swings for the change of top and bottom gate oxide thickness, we know the subthreshold swings are greatly changed for gate oxide thickness. Especially we know the subthreshold swings are increasing with the increase of top and bottom gate oxide thickness, and top gate oxide thickness greatly influences subthreshold swings.

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An improved 1D-model for computing the thermal behaviour of concrete dams during operation. Comparison with other approaches

  • Santillan, D.;Saleteb, E.;Toledob, M.A.;Granados, A.
    • Computers and Concrete
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    • v.15 no.1
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    • pp.103-126
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    • 2015
  • Thermal effects are significant loads for assessing concrete dam behaviour during operation. A new methodology to estimate thermal loads on concrete dams taking into account processes which were previously unconsidered, such as: the evaporative cooling, the night radiating cooling or the shades, has been recently reported. The application of this novel approach in combination with a three-dimensional finite element method to solve the heat diffusion equation led to a precise characterization of the thermal field inside the dam. However, that approach may be computationally expensive. This paper proposes the use of a new one-dimensional model based on an explicit finite difference scheme which is improved by means of the reported methodology for computing the heat fluxes through the dam faces. The improved model has been applied to a case study where observations from 21 concrete thermometers and data of climatic variables were available. The results are compared with those from: (a) the original one-dimensional finite difference model, (b) the Stucky-Derron classical one-dimensional analytical solution, and (c) a three-dimensional finite element method. The results of the improved model match well with the observed temperatures, in addition they are similar to those obtained with (c) except in the vicinity of the abutments, although this later is a considerably more complex methodology. The improved model have a better performance than the models (a) and (b), whose results present larger error and bias when compared with the recorded data.

Subthreshold Swing for Top and Bottom Gate Voltage of Asymmetric Double Gate MOSFET (비대칭 DGMOSFET의 상·하단 게이트전압에 대한 문턱전압이하 스윙)

  • Jung, Hakkee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.18 no.3
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    • pp.657-662
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    • 2014
  • This paper has analyzed the subthreshold swings for top and bottom gate voltages of asymmetric double gate(DG) MOSFET. The asymmetric DGMOSFET is four terminal device to be able to separately bias for top and bottom gates. The subthreshold swing, therefore, has to be analyze not only for top gate voltage, but also for bottom gate voltage. In the pursuit of this purpose, Poisson equation has been solved to obtain the analytical solution of potential distribution with Gaussian function, and the subthreshold swing model has been presented. As a result to observe the subthreshold swings for the change of top and bottom gate voltage using this subthreshold swing model, we know the subthreshold swings are greatly changed for gate voltages. Especially we know the conduction path has been changed for top and bottom gate voltage and this is expected to greatly influence on subthreshold swings.

When do cosmic peaks, filaments, or walls merge? A theory of critical events in a multiscale landscape

  • C Cadiou;C Pichon;S Codis;M Musso;D Pogosyan;Y Dubois;J-F Cardoso;S Prunet
    • Monthly Notices of the Royal Astronomical Society
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    • v.496 no.4
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    • pp.4787-4821
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    • 2020
  • The merging rate of cosmic structures is computed, relying on the ansatz that they can be predicted in the initial linear density field from the coalescence of critical points with increasing smoothing scale, used here as a proxy for cosmic time. Beyond the mergers of peaks with saddle points (a proxy for halo mergers), we consider the coalescence and nucleation of all sets of critical points, including wall-saddle to filament-saddle and wall-saddle to minima (a proxy for filament and void mergers, respectively), as they impact the geometry of galactic infall, and in particular filament disconnection. Analytical predictions of the one-point statistics are validated against multiscale measurements in 2D and 3D realizations of Gaussian random fields (the corresponding code being available upon request) and compared qualitatively to cosmological N-body simulations at early times (z ≥ 10) and large scales (≥5 Mpc h-1). The rate of filament coalescence is compared to the merger rate of haloes and the two-point clustering of these events is computed, along with their cross-correlations with critical points. These correlations are qualitatively consistent with the preservation of the connectivity of dark matter haloes, and the impact of the large-scale structures on assembly bias. The destruction rate of haloes and voids as a function of mass and redshift is quantified down to z = 0 for a Lambda cold dark matter cosmology. The one-point statistics in higher dimensions are also presented, together with consistency relations between critical point and critical event counts.

Determination of homogentisic acid in human plasma by GC-MS for diagnosis of alkaptonuria (GC-MS를 이용한 혈장 중 호모겐티식산의 분석;알캅톤뇨증의 진단)

  • Thapa, Maheshwor;Yu, Jundong;Lee, Wonjae;Islam, Fokhrul;Yoon, Hye-Ran
    • Analytical Science and Technology
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    • v.28 no.5
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    • pp.323-330
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    • 2015
  • Alkaptonuria, a rare inherited metabolic disease, is characterized by a lack of homogentisate dioxygenase and accumulation of homogentisic acid (HGA), leading to homogentisic aciduria, arthritis, and ochronosis. In this study, a rapid analytical method, without an expensive and tedious solid phase extraction step, was developed to quantify HGA in plasma using GC-MS. HGA-spiked pooled plasma samples were subjected to liquid-liquid extraction (LLE) with ethyl acetate, followed by trimethylsilyl derivatization (TMS) and GC-MS quantification using selected ion monitoring. The formation of TMS derivative of the 1 carboxylic and 2 hydroxyl functional groups was performed by reacting BSTFA (with 10% TMCS) for 5 min at 80 ℃. For selected ion monitoring, quantification and confirmation ions were determined based on specific ions (m/z 384, m/z 341 and m/z 252) of the TMS derivative of HGA. Calibration curves of pooled normal plasma specimens showed a linear relationship in the range of 1-100 ng/µL. The precision and accuracy were within a relative standard deviation (RSD) of 1 to 15% and a bias of -5 to 25%. Recoveries were obtained in the range of 99-125% and 95-115% for intra-day and inter-day assay, respectively, at 2, 20 and 80 ng/µL. The limit of detection (LOD) and limit of quantification (LOQ) were 0.4 ng/µL and 4 ng/µL, respectively. No homogentisic acid was excreted from normal Korean plasma samples. Collectively, the results from the present study suggest that this method could be useful for routine diagnosis and therapeutic monitoring of alkaptonuria patients with excellent sensitivity and rapidity.