• Journal of information and communication convergence engineering
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• v.8 no.1
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• pp.107-111
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• 2010

This paper has presented the dependence of the threshold voltage on back gate bias and drain voltage for FinFET. The FinFET has three gates such as the front gate, side and back gate. Threshold voltage is defined as the front gate bias when drain current is 1 micro ampere as the onset of the turn-on condition. In this paper threshold voltage is investigated into the analytical potential model derived from three dimensional Poisson's equation with the variation of the back gate bias and drain voltage. The threshold voltage of a transistor is one of the key parameters in the design of CMOS circuits. The threshold voltage, which described the degree of short channel effects, has been extensively investigated. As known from the down scaling rules, the threshold voltage has been presented in the case that drain voltage is the 1.0V above, which is set as the maximum supply voltage, and the drain induced barrier lowing(DIBL), drain bias dependent threshold voltage, is obtained using this model.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.3
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• pp.124-133
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• 1995

A theoretical self-consistent thermoelectric model has been developed for optimal thermal design in the self-signal processing infraed detectors. The model is achived by employing the coupled thermoelectric equation which allows which allows the simultaneous investigation of the termal and electrical aspects of device behavior. The thermal limitation of detectivity and responsivity are determined by the enegy gap, carrier concentration, lifetime, and mobility as a function of the temperature. The calculated results indicate that the detectivity is decreased at bias fields above about 50 V/cm, because the performence is limiting by temperature when the bias voltage reached the level associated with Joule heating. It has been also found that the improvement in the mid-band modulation transfer function(MTF) may be restricted by increasing the bias fields. Further, the important paramerers in the thermal optimization of SPIR detector, such as temperature in the device, ambipolar velocity, element thickness and length, are also considered. The analytical study provides a mathematical basis for optimal design of such a photoconductive IR detector and the agreement between the experimental and theoretical results are seen to be good.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.38 no.6
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• pp.401-415
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• 1989

A simple but accurate analytical model for the lateral channel electric field in gate-offset structured Lightly Doped Drain MOSFET has been developed. Our model assumes Gaussian doping profile, rather than simple uniform doping, for the lightly doped region and our model can be applied to LDD structures where the junction depth of LDD is not identical to the heavily doped drain. The validity of our model has been proved by comparing our analytical results with two dimensional device simulations. Due to its simplicity, our model gives a better understanding of the mechanisms involved in reducing the electric field in the LDD MOSFET. The model shows clearly the dependencies of the lateral channel electric field on the drain and gate bias conditions and process, design parameters. Advantages of our analytical model over costly 2-D device simulations is to identify the effects of various parameters, such as oxide thickness, junction depth, gate/drain bias, the length and doping concentration of the lightly doped region, on the peak electric field that causes hot-electron pohenomena, individually. Our model can also find the optimum doping concentration of LDD which minimizes the peak electric field and hot-electron effects.

• Journal of Korean Society of Occupational and Environmental Hygiene
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• v.19 no.2
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• pp.96-101
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• 2009

The purpose of this study was to conduct the field validation of alternative method(ETM method) by using non-carcinogenic, and less toxic solvents than NIOSH (National Institute for Occupational Safety and Health) analytical method 5524 for measuring the airborne metalworking fluids in workplaces. We carried out the field validation test by using the exposure chamber, guaranteeing the air sampling homogeneously in a machining environment. The ETM mixed solvent presented the complete solubility of MWFs used in test field. Based on the field test data, the bias of the ETM method from reference method, NIOSH analytical method 5524, was from -7.0% to 5.1%. The overall uncertainty of the ETM nethod was 21.6%, which satisfied the NIOSH criteria for the sampling and analytical criteria.

• Analytical Science and Technology
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• v.8 no.4
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• pp.597-601
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• 1995

The transfer of chloride ion across an anion exchange membrane (AEM) was investigated by cyclic voltammetry (CV) and electrochemical impedance spectra. In CV experiment, when the size of the hole in membrane was much smaller than the distance between membrane holes, the Cl anion transfer showed steady state voltammetric behavior. Each hole in membrane can be regarded as a microelectrode and the membrane was equivalent to a microelectrode array in this condition. When the hole in membrane was large or the distance between membrane holes was small, the CV curve of the Cl anion transfer across membrane showed peak shape, which attributed to linear diffusion. In ac impedance measurement, the impedance spectrum of the membrane system was composed of two semicircles at low de bias, corresponding to the bulk characteristics of the membrane and the kinetic process of ion transfer, respectively. The bulk membrane resistance increases with increasing dc bias and only one semicircle was observed at higher dc bias. The parameters related to kinetic and membrane properties were discussed.

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1315-1317
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• 1998

We have investigated the effects of electrical stress on poly-Si TFTs with different hydrogen passivation conditions. The amounts of threshold voltage shift of hydrogen passivated poly-Si TFTs are much larger than those of as-fabricated devices both under the gate bias stressing and under the gate and drain bias stressing. Also, we have quantitatively analized the degradation phenomena using by analytical method. we have suggested that the electron trapping in the gate dielectric is the dominant degradation mechanism in only gate bias stressed poly-Si TFT while the creation of defects in the poly-Si is prevalent in gate and drain bias stressed device.

• Journal of Korean Society for Atmospheric Environment
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• v.21 no.2
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• pp.269-274
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• 2005

In this work, analytical bias arising from the gas chromatographic determination of sulfur compounds was evaluated by the application of direct loop injection method to the GC/PFPD detection of four sulfur compounds including H$_{2}$S, CH$_{3}$SH, DMS, and DMDS. For the proper evaluation of analytical uncertainties involved in GC calibration, we employed two comparative techniques of calibration at fxed concentration injection (CFCI) vs calibration at fixed volume injection (CFVI) method. The results of our study indicate that CFCI method exhibits very poor sensitivity due to the matrix effect with varying injection volumes. On the other hand, as CFVI method overcomes such limitation, it can be used to obtain very accurate quantification of S compounds at their high concentration levels above a few to a few tens ppb.

• Proceedings of the KIEE Conference
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• 1988.11a
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• pp.363-367
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• 1988

A simple analytical model for the lateral channel electric field in gate - offset structured Lightly Doped Drain MOSFET has been developed. The model's results agree well with two dimensional device simulations. Due to its simplicity, our model gives a better understanding of the mechanisms involved in reducing the electric field in the LDD MOSFET. The model shows clearly the dependencies of the lateral channel electric field as function of drain and gate bias conditions and process, design parameters. Advantages of analytical model over costly 2-D device simulations is to identify the effects of various parameters, such as oxide thickness, junction depth, gate / drain bias, the length and doping concentration of the lightly doped region, on the peak electric field that causes hot - electron phenomena, individually. We are able to find the optimum doping concentration of LDD minimizing the peak electric field and hot - electron effects.

• Journal of Korean Society for Atmospheric Environment
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• v.26 no.4
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• pp.449-452
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• 2010

In this article, the performance of the THC analyzer was inspected using two different span gases of methane ($CH_4$) and propane ($C_3H_8$). To explore the effect of standard gas selection, MicroFID system was tested by the following procedures. Initially, the system is spanned by propane gas of 60 ppm (or 180 ppmC). The system is then run against methane standards prepared at 5 different concentrations of 200, 250, 300, 400, and 500 ppm. According to the suggestion of the KMOE's test procedure to use multiplying a factor of 3 (for propane), the resulting THC values derived by methane standards were systematically biased with ~500% error relative to true value. This paper discusses the interpretation procedures to obtain the least biased THC values for a given span set-up.

• Proceedings of the Korea Air Pollution Research Association Conference
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• 2006.10a
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• pp.59-61
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• 2006