• Proceedings of the Korea Information Processing Society Conference
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• 2011.11a
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• pp.1174-1176
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• 2011

Unfortunately, the number of blind people increases every 5 seconds in our world. An extensive research was made on improving the conventional walking cane and developing a microcontroller based walking stick for the blind with sensors and a feedback in form of vibration. Two different kinds of sensors are used to detect obstacles, ultrasonic and infrared distance sensors. The signal from an ultrasonic sensor is fed to a microcontroller. With the help of the supporting software, the Pulse Width Modulation (PWM) principle is extensively used to form three zones and run the corresponding vibration motor at different spends according to how far the detected object is located. The other infrared distance sensors are connected to amplifiers and after that to their corresponding vibration motors through motor drivers. The vibration motors are to be located around the user's arm to notify the blind of the obstacles in the intended walking way. It can be very reliable and sufficient device guiding the blind other than the conventional walking cane which has many drawbacks which will be explained and discussed.

• The Journal of the Acoustical Society of Korea
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• v.26 no.5
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• pp.188-193
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• 2007

In general, analog amplifiers for 5.1 or more channels have been used to configure home theater systems. In order to make high-performance systems, it is desirable to process audio signals in digital techniques in consideration of output and efficiency of speakers. Especially we need 7.1-channel system to separate audio signals efficiently. In this paper we implemented the architecture of S/PDIF 7.1-channel digital amplifier for home theater systems. The amplifier shows good performance with less loss of original sounds because of both strong characteristics against noises and direct processing of input data.

• ETRI Journal
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• v.46 no.3
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• pp.550-563
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• 2024

A novel inductance simulation circuit employing only two dual-output voltage-differencing buffered amplifiers (DO-VDBAs) and a single capacitance (grounded) is proposed in this paper. The reported configuration is a purely resistor-less realization that provides electronically controllable realized inductance through biasing quantities of DO-VDBAs and does not rely on any constraints related to matched values of parameters. This structure exhibits excellent behavior under the influence of tracking errors in DO-VDBAs and does not exhibit instability at high frequencies. The simple and compact metal-oxide semiconductor (MOS) implementation of the DO-VDBAs (eight MOS per DO-VDBA) and adoption of grounded capacitance make the proposed circuit suitable for on-chip realization from the perspective of chip area consumption. The function of the pure grounded inductance is validated through high pass/bandpass filtering applications. To test the proposed design, simulations were performed in the PSPICE environment. Experimental validation was also conducted using the integrated circuit CA3080 and operational amplifier LF-356.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.9
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• pp.25-30
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• 2004

In this Paper, the 0.1 w InGaAs/InAlAs/GaAs Metamorphic HEMT, which is applicable to MIMIC, and a 100 GHz MIMIC amplifier were designed and fabricated. The DC characteristics of MHEMT are 640 mA/mm of drain current density, 653 mS/mm of maximum transconductance. The current gain cut-off frequency(fT) is 173 GHz and the maximum oscillation frequency(fmax) is 271 GHz. A 100 GHz amplifier was designed using 0.1${\mu}{\textrm}{m}$ MHEMT and CPW technology. The measured results from the 100 GHz MIMIC amplifiers show good S21 gain of 10.1 dB and 12.74 dB at 100 GHz and 97.8 GHz, respectively.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.43 no.5 s.347
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• pp.128-136
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• 2006

In this paper, design and implement 50W Doherty power amplifiers for 3GPP repeater and base station transceiver system. Efficiency improvement and high power property of ideal Doherty power amplifier is distinguishable; however bias control for implementation of Doherty(GDCHD) amplifier is difficult. To solve the problem, therefore, GDCHD(Gate and Drain Control Hybrid Doherty) power amplifier is embodied to drain bias adjustment circuit to Doherty power amplifier with gate bias adjustment circuit. Experiment result shows that $2.11{\sim}2.17\;GHz$, 3GPP operating frequency band, with 57.03 dB gain, PEP output is 50.30 dBm, W-CDMA average power is 47.01 dBm, and -40.45 dBc ACLR characteristic in 5MHz offset frequency band. Each of the parameter satisfied amplifier specification which we want to design. Especially, GDCHD power amplifier shows proper efficiency performance improvement in uniformity ACLR than Doherty power amplifier.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.4
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• pp.43-51
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• 2013

This paper presents a design and implementation of a low power switched-capacitor 3rd-order delta-sigma modulator for a digital hearing-aid application. The power consumption is reduced by minimizing the output swing of integrators through optimizing the coefficients of modulator architecture and using class-AB output operational amplifiers. The modulator was implemented in a 130nm CMOS technology, and measured to have 79dB of SNR(Signal-to-Noise Ratio) in the signal bandwidth between 100Hz and 10kHz with an oversampling ratio of 160. The power consumption was $60{\mu}W$ from 1.2V power supply and the modulator core occupied $0.53mm{\times}0.53mm$.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.159-159
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• 2016

Vertically-aligned carbon nanotubes (VCNT) have attracted much attention due to their unique structural, mechanical and electronic properties, and possess many advantages for a wide range of multifunctional applications such as field emission displays, heat dissipation and potential energy conversion devices. Surface modification of the VCNT plays a fundamental role to meet specific demands for the applications and control their surface property. Recent studies have been focused on the improvement of the electron emission property and the structural modification of CNTs to enable the mass fabrication, since the VCNT considered as an ideal candidate for various field emission applications such as lamps and flat panel display devices, X-ray tubes, vacuum gauges, and microwave amplifiers. Here, we investigate the effect of surface morphology of the VCNT by water vapor exposure and coating materials on field emission property. VCNT with various height were prepared by thermal chemical vapor deposition: short-length around $200{\mu}m$, medium-length around $500{\mu}m$, and long-length around 1 mm. The surface morphology is modified by water vapor exposure by adjusting exposure time and temperature with ranges from 2 to 10 min and from 60 to 120oC, respectively. Thin films of SiO2 and W are coated on the structure-modified VCNT to confirm the effect of coated materials on field emission properties. As a result, the surface morphology of VCNT dramatically changes with increasing temperature and exposure time. Especially, the shorter VCNT change their surface morphology most rapidly. The difference of field emission property depending on the coating materials is discussed from the point of work function and field concentration factor based on Fowler-Nordheim tunneling.

• Journal of the Korea Convergence Society
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• v.7 no.3
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• pp.77-85
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• 2016

We propose a digital signal processing technic that can compensate the non-linearity inherent in audio amplifiers, and present the result of the simulation. The inherent non-linearity of the audio power amplifier arising from analog devices is compensated via a digital signal processing technic consisting of indirect learning architecture and an adaptive filter. The simulation results show that the compensator can be realized using a third-order polynomial and compensates odd-order non-linearity efficiently. The even-oder non-linearity is mainly due to the dc offset at the output, which is difficult to eliminate with the proposed method. Care must be taken in designing the bias circuit to avoid the DC offset at the output. The proposed technic has significance in that digital signal processing technic can compensate for the impairment that is an inherent characteristic of an analog system.

• Smart Media Journal
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• v.4 no.2
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• pp.55-61
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• 2015

A bandwidth-enhanced ultra-wide band (UWB) CMOS balun-LNA is implemented as a part of a software defined radio (SDR) receiver which supports multi-band and multi-standard. The proposed balun-LNA is composed of a single-to-differential converter, a differential-to-single voltage summer with inductive shunt peaking, a negative feedback network, and a differential output buffer with composite common-drain (CD) and common-source (CS) amplifiers. By feeding the single-ended output of the voltage summer to the input of the LNA through a feedback network, a wideband balun-LNA exploiting negative feedback is implemented. By adopting a source follower-based inductive shunt peaking, the proposed balun-LNA achieves a wider gain bandwidth. Two LNA design examples are presented to demonstrate the usefulness of the proposed approach. The LNA I adopts the CS amplifier with a common gate common source (CGCS) balun load as the S-to-D converter for high gain and low noise figure (NF) and the LNA II uses the differential amplifier with the ac-grounded second input terminal as the S-to-D converter for high second-order input-referred intercept point (IIP2). The 3 dB gain bandwidth of the proposed balun-LNA (LNA I) is above 5 GHz and the NF is below 4 dB from 100 MHz to 5 GHz. An average power gain of 18 dB and an IIP3 of -8 ~ -2 dBm are obtained. In simulation, IIP2 of the LNA II is at least 5 dB higher than that of the LNA I with same power consumption.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.11
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• pp.828-835
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• 2001

Novel bipolar transresistance amplifier(TRA) and its offset-compensated TRA for high-performance current-mode signal processing are described. The TRA consist of two current follower for a current inputs, a current summer for the current-difference, a resistor for the current to voltage converter, and a voltage follower for the voltage output. The offset-compensated TRA adopts diode-connected npn and pnp transistor to reduce offset voltage in the TRA. The simulation results show that the TRA has impedance of 0.5 Ω at the input and the output terminal. The offset voltages at these terminals is 40 mV The offset-compensated TRA has the offset voltage of 1.1 mV and the impedance of 0.25 Ω. The 3-dB cutoff frequency is 40 MHz for the two TRA＇s when used as a current to voltage converter with unit-gain transresistance. The power dissipation is 11.25 mW.