• Journal of electromagnetic engineering and science
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• v.16 no.1
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• pp.44-51
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• 2016

A commercial $0.25{\mu}m$ GaN process is used to implement 6-18 GHz wideband power amplifier (PA) monolithic microwave integrated circuits (MMICs). GaN HEMTs are advantageous for enhancing RF power due to high breakdown voltages. However, the large-signal models provided by the foundry service cannot guarantee model accuracy up to frequencies close to their maximum oscillation frequency ($F_{max}$). Generally, the optimum output load point of a PA varies severely according to frequency, which creates difficulties in generating watt-level output power through the octave bandwidth. This study overcomes these issues by the development of in-house large-signal models that include a thermal model and by applying distributed L-C output load matching to reactive matched amplifiers. The proposed GaN PAs have successfully accomplished output power over 5 W through the octave bandwidth.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.4
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• pp.449-456
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• 2012

Herein, we design a wideband $8{\times}8$ waveguide Butler matrix in order to use in a multi-port amplifiers(MPAs) at Ka-band. To achieve the broadband characteristic, we design a binomial 6-slot 3 dB directional coupler which is used to configure the $8{\times}8$ Butler matrix. The measured results of the fabricated $8{\times}8$ Butler matrix have low insertion loss of less than 0.3 dB, good return loss of over 26 dB and high isolation of over 35 dB within the design bandwidth of 3 GHz.

• Journal of the Korea Society of Computer and Information
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• v.5 no.2
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• pp.115-120
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• 2000

This papers describes two low-noise amplifiers that use the Hewlett-Packard ATF-10236 low noise GaAs FET device, The actual measured performance of the amplifiers compares favorably to that predicted by the computer simulation(ADS) the noise figure of the 1575MHz amplifier was measured at 1.78dB which is lower that 2dB as specified. Measurement gam measured 33.0075dB which is within 35dB$\pm$0.5㏈ of the GPS specification. Network Analyzer(HP8510) is used to measure all the s-parameters and Noise Figure meter(HP8970B) is used to measure noise figure. As the result of experiment, gain, input VSWR, output VSWR is within the GPS specification sufficiently.

• Journal of the Korean Institute of Telematics and Electronics
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• v.21 no.5
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• pp.33-40
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• 1984

In the conventional pulsed doppler system, gated CW is used to excite a ultrasonic transducer so that a group of linear RF amplifiers are required to excite a ultrasonic array transducer in the scanning pulsed doppler system. A pulsed doppler system without linear high voltage RF amplifiers, which excites the transducer impulsively, is studied theoretically and experimentally. In this paper, an experimental 8-channel pulsed doppler system is implemented, which uses quadrature defection to detect the direction of motion and can compensate the attenuation effect. The designed pulsed doppler system shows the possibility of real time multichannel doppler flow meter.

• Information and Communications Magazine
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• v.19 no.10
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• pp.78-92
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• 2002

고용량 파장다중분할(WDM) 전송 시스템의 수요가 폭발적으로 증가함에 따라 기존의 erbium-doped fiber amplifiers(EDFA)가 제공하는 이득 대역을 넘어서는 대역폭의 광증폭기의 개발이 촉진되고 있다. 에르븀 이외의 새로운 회토류 첨가물을 사용한 증폭기와 광섬유 내에서의 비선형 현상인 라만 산란에 의한 라만 증폭기에 집중적인 연구가 그 예라 하겠다. 최근 몇 년간의 집중적인 연구를 통하여 현재의 광대역 광 증폭기는 기존의 EDFA(C 벤드 EDFA)가 제공하는 광이득대역의 4∼5배 정도를 쉽게 제공할 수 있다. 이러한 목적을 가지고 통신시장에서 사용될 수 있는 1500nm 근처 대역의 증폭에 대한 세가지의 증폭 기술이 연구되고 있다. 우선, S+밴드(1450-1480nm)와 S밴드(1480-1530nm)의 증폭을 위한 thulium-doped fluoride fiber amplifiers(TDFFA), C 밴드(1530-1560nm)와 L 밴드(1570-1610nm)를 위한 EDFA, 그리고 마지막으로 100nm 이상의 이득대역과 S+에서 L밴드까지 증폭파장대역의 선택이 자유로운 라만 증폭기가 있다. 또한 위의 세 기술을 직렬 또는 병렬로 조합하여 사용하는 증폭기가 있다. 이러한 증폭기 모두에 대해서 실험적인 보고는 많이 있었으나, 내부의 에너지 준위가 복잡하여 증폭 기제가 복잡하고, 실험 파라미터를 측정하기가 어려워서 광대역증폭기의 성능을 예측하기 어려운 점이 있었다. 게다가 이러한 상황에서 광대역증폭기에 대한 해석적이거나 수치해석적인 심도깊은 연구가 부족하여 앞으로 증폭기를 다양하게 응용하기 위한 성능의 예측이 어려울 것으로 보인다. 이는 광대역 증폭기 기반의 전송 시스템을 성공적으로 적용하는데 제한을 줄 것이다. 따라서 본 논문에서는 광대역 증폭기(C/L밴드 EDFA, 라만 증폭기, TDFA)에 대한 실험적인 분석뿐만 아니라 해석적, 수치해석적인 분석 방법까지 그 응용의 예와 함께 소개할 것이다.

• ETRI Journal
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• v.42 no.5
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• pp.773-780
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• 2020

A 40 nm complementary metal oxide semiconductor carrier-aggregated drive amplifier with high linearity is presented for sub-GHz Internet of Things applications. The proposed drive amplifier consists of two high linear amplifiers, which are composed of five differential cascode cells. Carrier aggregation can be achieved by switching on both the driver amplifiers simultaneously and combining the two independent signals in the current mode. The common gate bias of the cascode cells is selected to maximize the output 1 dB compression point (P1dB) to support high-linear wideband applications, and is used for the local supply voltage of digital circuitry for gain control. The proposed circuit achieved an output P1dB of 10.7 dBm with over 22.8 dBm of output 3rd-order intercept point up to 0.9 GHz and demonstrated a 55 dBc adjacent channel leakage ratio (ACLR) for the 802.11af with -5 dBm channel power. To the best of our knowledge, this is the first demonstration of the wideband carrier-aggregated drive amplifier that achieves the highest ACLR performance.

• Proceedings of the IEEK Conference
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• 2002.06a
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• pp.167-170
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• 2002

The design and fabrication of Q-band 3-stage monolithic microwave integrated circuit(MMIC) driver and power amplifiers for WLAN are presented using 0.2${\mu}{\textrm}{m}$ AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor(PHEMT). In each stage of the MMIC DA, a negative feedback is used for both broadband and good stability. The MMIC PA has employed a balanced configuration to overcome these difficulties and achieve high power with low VSWR over a wide frequency range. In the MMIC DA, the measurement results arc achieved as an input return loss under -4dB, an output return loss under -l0dB, a gain of 14dB, and a PldB of 17dB at C-band(36~ 44GHz). The chip size is 28mm$\times$1.3mm. The developed MMIC PA has the l0dB linear gain over 360Hz to 420Hz band and 22dBm PldB performance at 400Hz. The size of fabricated MMIC PA is 4mm x3mm. These results closely match with design results. This MMIC DA Sl PA will be used as the unit cells to develop millimeter-wave transmitters for use in wideband wireless LAN systems.

• Journal of the Korean Chemical Society
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• v.14 no.4
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• pp.341-345
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• 1970

An improved derivative thermometric titration apparatus designed around operational amplifiers is described which is capable of monitoring the small temperature change and of computing the derivatives for accentuation of the titration end point that is difficult to locate by extrapolation methods. The instrument is constructed of four commercial operational amplifiers. A use of dummy cell provides the subtraction means for compensation of the initial temperature and random temperature fluctuations with a resultant gain in signal-to-noise ratio. The successive differentiation action of the computer has been nearly "perfect," so that the two breaks (blank or starting and end point of the titration curve can be located with the precision of 0.2% by observing two peak points on the second derivative curve. Arrangements useful in obtaining such a good derivative response that is exactly proportional to the input signal are discussed. Plots of the enthalphogram and its derivatives are presented, with the results of several titrations used to evaluate the performance of the apparatus.

• Korean Journal of Optics and Photonics
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• v.14 no.2
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• pp.166-168
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• 2003

By using gain saturation of semiconductor optical amplifiers (SOAs), an all-optical AND gate at 10 Gb/s has been successfully demonstrated. Firstly, Boolean (equation omitted) has been obtained using the first SOA with signal B and clock injection. Then, the all-optical AND gate is achieved using the second SOA with signals A and (equation omitted) injection.

• Korean Journal of Optics and Photonics
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• v.11 no.5
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• pp.340-346
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• 2000

Traveling wave type semiconductor optical amplifiers integrated with spot-size-converter (SSC-TW-SOA) have been extensively studied for the improvement of coupling effiClency With single-mode fiber and fO! the cost reducClon 111 a packaging In tlIis paper the slructural dependence of the spot-slZe-converter on the effective facet reflectlvllY $R_{eff}$ was experimentally as well as thcoretienlly mvestlgated. It was shown that not only a sufficient mode-conversion in a sse region along the latersl and tran~verse directions but also an introductIOn of angled-facet were very essential in order to reduce $R_{eff}$ Very small ripple less than 0.1 dB in an amplified spontaneous emission spectrum was observed with the fabncated SSC-lW-SOA which consists of the wrndow length of $20\mu\textrm{m}$, facet angle of $7^{\circ}$, and antlrelleetioll-coated facet of ] % reflectivity.tivity.