• Proceedings of the KIEE Conference
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• 2002.11c
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• pp.517-520
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• 2002

This paper has been studied Operational Amplification Circuit that has high power specification of 90 W is designed. In the input differential amplifier stage, the current source for circuit bias is designed to protect device from high voltage source. the criving state has the voltage gain more than input differential stage. With temperature compensation design, output stage works stable in different to temperature.

• Journal of the Optical Society of Korea
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• v.10 no.1
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• pp.11-15
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• 2006

We have proposed and theoretically verified an optical regenerator using a single semi-reflective semiconductor optical amplifier (SR-SOA). To explain the operation characteristics and the operation condition of the proposed opticalregenerator, the simplified gain model for the SR-SOA is introduced and confirmed by comparing the result of the SOA simulation based on the transfer matrix method (TMM). The simulation results show that both extinction ratio (ER) enhancement and signal amplification can be achieved in the proposed regenerator.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.815-816
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• 2006

In this paper, an EMG (Electromyography) sensor for utilizing an EMGl-based HCI are described. The EMG sensor is a dry type and has high gain (1000-10000). Therefore, this sensor can be properly applied to HCI devices using EMG signals without additional amplification circuit.

• The KIPS Transactions:PartA
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• v.12A no.6 s.96
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• pp.531-538
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• 2005

In the high performance Analog Information Processing Systems(AIPS), gain boosting or additional gain stage is required when the gain is not sufficient with one stage amplification. This work shows that high gain is neatly obtained by enhancing the gain using the negative resistance element. Compared to the conventional techniques, the proposed scheme enjoys full output swing, small circuit area and power consumption, and the applications to various configurations of amplifiers. The negative resistance element is placed between the differential output nodes when used in the Op-Amp. The HSPICE simulation indicates that enhancement of more than 40 dB is readily obtained in this simple configuration when the negative resistance element is implemented in the form of cross-coupled CMOS inverters.

• Proceedings of the IEEK Conference
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• 2000.11b
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• pp.104-107
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• 2000

We designed and implemented the RFIC(RF front-end IC) for DTV(Digital TV) tuner. The DTV tuner RF front-end consists of low noise IF amplifier fur the amplification of 900 MHz RF signal and down conversion mixer for the RF signal to 44MHz IF conversion. The RFIC is implemented on ETRI 0.8u high resistive (2㎘ -cm) and evaluated by on wafer, packaged chip test. The gain and IIP3 of IF amplifier are 15㏈ and -6.6㏈m respectively. For the down conversion mixer gain and IIP3 are 13㏈ and -6.5㏈m. Operating voltage of the IF amplifier and the down mixer is 5V, current consumption are 13㎃ and 26㎃ respectively.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2000.11a
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• pp.216-219
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• 2000

A Ka Band 3-stage MMIC (Monolithic Microwave Integrated Circuits) LNA(Low Noise Amplifiers) has been designed. The MMIC LNA consists of two single-ended type amplication stapes and one balanced type amplication stage to satisfy noise figure characteristics and high gain and amplitude linearity. The 0.15um pHEMT has been used to provide a ultra low noise figure and high gain amplification. Series and Shunt feedback circuits were inserted to ensure high stability over frequency range of DC to 80 GHz. The size of designed MMIC LNA is 3100mm ${\times}$ 2400um(7.44$\textrm{mm}^2$). The on wafer measured noise figure of the MMIC LNA is less than 2.0 dB over frequency range of 22 GHz to 30 GHz.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.31 no.6A
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• pp.547-555
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• 2006

We implemented DPU(Double-Pass Gain-Clamped) L-band EDFA for highly efficient amplification. A lasing signal generated within the linear cavity, can minimize the fluctuation of surviving channels when several WDM(Wavelength Division Multiplexing) channels are added or dropped. The new method measuring the characteristics of transient response of surviving channels quantitatively is suggested. It is to measure the ratio of lasing output before add or drop to that after add or drop. We investigated dynamic characteristics by using this method according to lasing wavelengths and propagation directions within the cavity. Experimental measurements show that the short lasing wavelength and backward propagation direction is the best condition for small fluctuation of surviving channels.

• Progress in Superconductivity and Cryogenics
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• v.21 no.1
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• pp.10-14
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• 2019

Radio-frequency (RF) amplifiers based on direct current (DC) superconducting quantum interference device (SQUID) have low-noise performance for precision physics experiments. Gain curves of SQUID RF amplifiers depend on several parameters of the SQUID and operation conditions. We are developing SQUID RF amplifiers for application to measure very weak RF signals from ultra-low-temperature high-magnetic-field microwave cavity in axion search experiments. In this study, we designed, fabricated and characterized SQUID RF amplifiers with different SQUID parameters, such as number of input coil turn, shunt resistance value of the junction and coupling capacitance in the input coil, and compared the results.

• ETRI Journal
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• v.46 no.2
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• pp.323-332
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• 2024

Receiver and transmitter monolithic microwave integrated circuit (MMIC) multifunction chips (MFCs) for active phased-array antennas for Ka-band satellite communication (SATCOM) terminals have been designed and fabricated using a 0.15-㎛ GaAs pseudomorphic high-electron mobility transistor (pHEMT) process. The MFCs consist of four-channel radio frequency (RF) paths and a 4:1 combiner. Each channel provides several functions such as signal amplification, 6-bit phase shifting, and 5-bit attenuation with a 44-bit serial-to-parallel converter (SPC). RF pads are implemented on the bottom side of the chip to remove the parasitic inductance induced by wire bonding. The area of the fabricated chips is 5.2 mm × 4.2 mm. The receiver chip exhibits a gain of 18 dB and a noise figure of 2.0 dB over a frequency range from 17 GHz to 21 GHz with a low direct current (DC) power of 0.36 W. The transmitter chip provides a gain of 20 dB and a 1-dB gain compression point (P1dB) of 18.4 dBm over a frequency range from 28 GHz to 31 GHz with a low DC power of 0.85 W. The P1dB can be increased to 20.6 dBm at a higher bias of +4.5 V.

• The Journal of the Korea institute of electronic communication sciences
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• v.10 no.6
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• pp.665-670
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• 2015

In this paper, We proposed a broadband RF amplifier for Microwave band receiver. We also proposed a broadband RF amplifier, designed by using EM simulation for reliable amplification of the received signal. Connected to a source terminal to via, it minimizes those which are the active elements of source-side oscillation as the operating element in an ideal GND, and a constant gain characteristic in a broadband. The goal of this was to obtain stable amplification characteristics. For implementing this architecture, we designed the broadband(500 MHz ~ 7 GHz) RF amplifier by using commercial GaAs FET, which operate on 720 MHz, 4,595 MHz, and 6,035 MHz by impedance matching. The voltage gain is 10.635 dB ~ 14.407 dB(737.5 MHz ~ 6.0575 GHz), P1dB is 20 dBc of band(1st harmonic/2nd harmonic).