• 한국윤활학회:학술대회논문집
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• 한국윤활학회 2002년도 proceedings of the second asia international conference on tribology
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• pp.69-69
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• 2002

• 한국재료학회지
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• 제4권6호
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• pp.644-650
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• 1994

Electrohydrodynamic Atomization 급냉응고장치를 이용하여 고순도 실리콘 미세분말을 제조하여 투과전자현미경으로 미세조직과 그 응고상을 조사한 결과 직경이 60nm 이하인 분말에서 비장질상이 발견되었다. 비정질 실리콘의 원자구조를 분석하기 위하여 비정질 분말에서 얻은 전자회절 데이타를 이용하여 radial distribution function을 계산하여 해석한 결과, 실리콘의 결정구조인 다이아몬드 입방격자에서 발견되는 기본적 정사면체 배열이 비정질 실리콘의 2번째 근접원자간 거기까지 유지됨을 알 수 있었으며 이로부터 비정질 실리\ulcorner이 단범위 규칙성을 갖는 tetrahedrally coordinated random network 원자배열로 이루어짐을 알았다.

• 한국표면공학회지
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• 제53권6호
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• pp.360-368
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• 2020

Wear resistance of cutting tools is one of the most important requirements in terms of the durability of cutting tool itself as well as the machining accuracy of the workpiece. Generally, tungsten carbide ball end mills have been processed with hard coatings for high durability and wear resistance such as diamond coating and tetrahedral amorphous carbon(ta-C) coating. In this study, we developed multilayer ta-C coatings whose wear resistance is comparable to that of diamond coating. First, we prepared single layer ta-C coatings according to the substrate bias voltage and Ar gas flow, and the surface microstructure, raman characteristics, hardness and wear characteristics were evaluated. Then, considering the hardness and wear resistance of the single layer ta-C, we fabricated multilayer coatings consisting of hard and soft layers. As a result, it was confirmed that the wear resistance of the multilayer ta-C coating with hardness of 51 GPa, and elastic recovery rate of 85% improved to 97% compared to that of the diamond coated ball end mill.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1996년도 The 9th KACG Technical Annual Meeting and the 3rd Korea-Japan EMGS (Electronic Materials Growth Symposium)
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• pp.5-18
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• 1996

The solid state cesium ion source os alumino-silicate based zeolite which contains cerium. The material is an ionic conductor. Cesiums are stably stored in the material and one can extract the cesiums by applying electric field across the electrolyte. Cesium ion bombardment has the unique property of producing high negative ion yield. This ion source is used as the primary source for the production of a negative ion without any gas discharge or the need for a carrier gas. The deposition of materials as an ionic species in the energy range of 1.0 to 300eV is recently recognized as a very promising new thin film technique. This energetic non-thermal equilibrium deposition process produces films by “Kinetic Bonding / Energetic Condensation" mechansim not governed by the common place thermo-mechanical reaction. Under these highly non-equilibrium conditions meta-stable materials are realized and the negative ion is considered to be an optimum paeticle or tool for the purpose. This process differs fundamentally from the conventional ion beam assisted deposition (IBAD) technique such that the ion beam energy transfer to the deposition process is directly coupled the process. Since cesium ion beam sputter deposition process is forming materials with high kinetic energy of metal ion beams, the process provider following unique advantages:(1) to synthesize non thermal-equilibrium materials, (2) to form materials at lower processing temperature than used for conventional chemical of physical vapor deposition, (3) to deposit very uniform, dense, and good adhesive films (4) to make higher doposition rate, (5) to control the ion flux and ion energy independently. Solid state cesium ion beam sputter deposition system has been developed. This source is capable of producing variety of metal ion beams such as C, Si, W, Ta, Mo, Al, Au, Ag, Cr etc. Using this deposition system, several researches have been performed. (1) To produce superior quality amorphous diamond films (2) to produce carbon nitirde hard coatings(Carbon nitride is a new material whose hardness is comparable to the diamond and also has a very high thermal stability.) (3) to produce cesiated amorphous diamond thin film coated Si surface exhibiting negative electron affinity characteristics. In this presentation, the principles of solid state cesium ion beam sputter deposition and several applications of negative metal ion source will be introduced.

• 한국결정성장학회지
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• 제31권6호
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• pp.233-239
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• 2021

본 연구에서는 산화갈륨의 방열 특성 향상을 위해 산화갈륨/다이아몬드 이종 박막 성장을 진행하였다. 먼저, 핫필라멘트 화학기상증착법을 이용하여 다결정 다이아몬드를 증착시킨 후, 미스트 화학기상증착법을 통해 450~600℃ 사이의 온도구간에서 산화갈륨 박막을 성장시켰다. 열처리 전후 비교를 통해 500℃에서 산화갈륨/다이아몬드 계면 분리 현상이 발생함을 확인하였다. 이는 비정질과 결정질이 혼재된 산화갈륨 박막이 성장된 후, 냉각 과정에서 열팽창계수의 차이로 인해 계면이 분리된 것으로 판단하였다. 따라서, 본 연구를 통한 산화갈륨/다이아몬드 계면의 물리적 안정성을 통해 산화갈륨의 열물성 보완및 고전력 반도체로의 활용이 기대된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.58-58
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• 1999

The diamond films which can be applied to SOD (silicon-on-diamond) structure were deposited on Si(100) substrate using CO/H2 CH4/H2 source gases by microwave plasma chemical vapor deposition(MPCVD), and SOD structure have been fabricated by poly-silicon film deposited on the diamond/Si(100) structure y low pressure chemical vapor deposition(LPCVD). The phase of the diamond film, surface morpholog, and diamond/Si(100) interface were confirmed by X-ray diffraction(XRD), scanning electron microscopy(SEM), atomic force microscopy(AFM), and Raman spectroscopy. The dielectric constant, leakage current and resistivity as a function of temperature in films are investigated by C-V and I-V characteristics and four-point probe method. The high quality diamond films without amorphous carbon and non-diamond elements were formed on a Si(100), which could be obtained by CO/H2 and CH4/H2 concentration ratio of 15.3% and 1.5%, respectively. The (111) plane of diamond films was preferentially grown on the Si(100) substrate. The grain size of the films deposited by CO/H2 are gradually increased from 26nm to 36 nm as deposition times increased. The well developed cubo-octahedron 100 structure nd triangle shape 111 are mixed together and make smooth and even film surface. The surface roughness of the diamond films deposited by under the condition of CO/H2 and CH4/H2 concentration ratio of 15.3% and 1.5% were 1.86nm and 3.7 nm, respectively, and the diamond/Si(100) interface was uniform resistivity of the films deposited by CO/H2 concentration ratio of 15.3% are obtained 5.3, 1$\times$10-9 A/cm, 1 MV/cm2, and 7.2$\times$106 $\Omega$cm, respectively. In the case of the films deposited by CH4/H2 resistivity are 5.8, 1$\times$10-9 A/cm, 1 MV/cm, and 8.5$\times$106 $\Omega$cm, respectively. In this study, it is known that the diamond films deposited by using CO/H2 gas mixture as a carbon source are better thane these of CH4/H2 one.

• 조명전기설비학회논문지
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• 제25권4호
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• pp.79-87
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• 2011

In this paper, the best conditions for the deposition of the high quality diamond thin-film from N-hexane as a carbon source in the microwave plasma process was carried out. Major parameters are the deposition time, flow rates of oxygen and hexane. The deposition time for the steady state thin-film was required more than 4[h], and the suitable flow rates of hexane and oxygen for the high-quality thin-film are 0.4[sccm] and 0.1~0.2[sccm], respectively. In addition, amorphous carbons such as DLC and graphite were grown by increasing the flow rate of hexane, and it decreased by increasing the flow rate of oxygen. Specifically, the growth rate is about 1.5[${\mu}mh-1$] under no addition of oxygen and it decreased about 60[%] as ca. 1.0[${\mu}mh-1$] with oxygen.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1989년도 하계종합학술대회 논문집
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• pp.390-393
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• 1989

Diamond is synthesized from the gaseous mixture of carbon monoxide and hydrogen by microwave PECVD. $10{\times}10mm^2$ silicon wafers are used as the substrate,and it can be raised more than $900^{\circ}C$ by microwave absorption, radiation by plasma and bombardment of ions. The changes of the morphology and the growth rates of the deposits with the experimental conditions are examined by Scanning Electron Microscopy. The d values of all the deposited films concide with those of powder diffraction data in XRD. In Raman spectra, the peak of the deposit coincides with that of the natural diamond which has a value of 1332.5 $cm^{-1}$, and the broad peak from 1360 $cm^{-1}$to 1600 $cm^{-1}$which represents the amorphous graphite was observed in the higher concentration of carbon monoxide.

• 마이크로전자및패키징학회지
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• 제18권1호
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• pp.49-53
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• 2011

Diamond-like carbon (DLC)은 $Sp^3$ 결합분율이 높은 준안정 상태의 비정질 탄소물질로 이루어진 박막이다. DLC는 기계적 특성, 화학적 특성, 윤활 특성뿐만 아니라 광학적, 전기적 특성 또한 우수한 물질이다. 본 연구에서는 DLC 박막을 그라파이트(graphite) 타깃을 출발 물질로 하여 고주파 마그네트론 스퍼터(RF magnetron sputter)로 $SiO_2$ 기판 상에 증착하였다. 증착된 DLC 박막은 후 열처리를 하였으며 열처리 온도에 따른 DLC 박막의 특성 변화를 관찰하였다. 열처리는 진공에서 급속가열법(rapid thermal process)으로 $300{\sim}500^{\circ}C$ 범위에서 시행하였다. 열처리된 DLC 박막은 전기적 특성 평가를 위하여 Hall 계수 측정기를 이용하여 상온 비저항을 측정하였으며 표면 변화를 확인하기 위하여 원자력 현미경(atomic force microscopy)을 이용하여 표면형상 변화를 관찰 하였다. 또한 표면특성, 비저항 특성 변화와 구조적 특성 변화와의 관계를 확인하기 위하여 X-선 광전자 분광법(X-ray photoelectron spectroscopy)과 라만 분광법을 이용하여 열처리에 따른 DLC 박막의 구조 변화를 관찰하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1511-1513
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• 1999

In order to investigate the properties of diamond-like carbon(DLC) thin films depending on the deposition parameters, DLC thin films were systematically fabricated by pulsed laser deposition (PLD), DLC thin films have been shown advantageous field emission properties due to a negative electron affinity (NEA) and a low work function. At the atomic level. DLC is referred to the group of carbon materials with strong chemical bonding composition of $sp^2$ and $sp^3$ arrangements of atoms incorporated with an amorphous structure. The experiment was performed at substrate temperature in the range of room temperature to $600^{\circ}C$. The laser energy densiy was used to be in the range of $6J/cm^2$ to $20J/cm^2$, SEM, Raman, PL, XPS and field emission characteristics were used to investigate the DLC thin films.