• Title/Summary/Keyword: amorphous structure

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Synthesis of Amorphous Er3+-Yb3+ Co-doped TiO2 and Its Application as a Scattering Layer for Dye-sensitized Solar Cells

  • Han, Chi-Hwan;Lee, Hak-Soo;Lee, Kyung-Won;Han, Sang-Do;Singh, Ishwar
    • Bulletin of the Korean Chemical Society
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    • v.30 no.1
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    • pp.219-223
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    • 2009
  • $TiO_2$ doped with $Er^{3+\;and\;Yb^{3+}$ was used for fabricating a scattering layer and a nano-crystalline $TiO_2$ electrode layer to be used in dye-sensitized solar cells. The material was prepared using a new sol-gel combustion hybrid method with acetylene black as fuel. The $Er^{3+}$-$Yb^{3+}$ co-doped titanium oxide powder synthesized at 700oC had embossed structure morphology with a size between 27 to 54 nm that agglomerated to produce micron size particles, as observed by the scanning electron micrographs. The XRD patterns showed that the $Er^{3+}$-$Yb^{3+}$ co-doped titanium oxide had an amorphous structure, while using the same method without doping $Er^{3+}\;or\;Yb^{3+},\;TiO_2$ was obtained in the crystallite form with thea dominance of rutile phase. Fabricating a bilayer structure consisting of nano-crystalline $TiO_2$ and the synthesized $Er^{3+}$-$Yb^{3+}$ co-doped titanium oxide showed better scattering property, with an overall increase of 15.6% in efficiency of the solar cell with respect to a single nano-crystalline $TiO_2$ layer.

The Characteristics of Amorphous-Oxide-Semiconductor Thin-Film-Transistors According to the Active-Layer Structure (능동층 구조에 따른 비정질산화물반도체 박막트랜지스터의 특성)

  • Lee, Ho-Nyeon
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.10 no.7
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    • pp.1489-1496
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    • 2009
  • Amorphous indium-gallium-zinc-oxide thin-film-transistors (TFTs) were modeled successfully. Dependence of TFT characteristics on structure, thickness, and equilibrium electron-density of the active layer was studied. For mono-active-layer TFTs, a thinner active layer had higher field-effect mobility. Threshold voltage showed the smallest absolute value for the 20 nm active-layer. Subthreshold swing showed almost no dependence on active-layer thickness. For the double-active-layer case, better switching performances were obtained for TFTs with bottom active layers with higher equilibrium electron density. TFTs with thinner active layers had higher mobility. Threshold voltage shifted in the minus direction as a function of the increase in the thickness of the layer with higher equilibrium electron-density. Subthreshold swing showed almost no dependence on active-layer structure. These data will be useful in optimizing the structure, the thickness, and the doping ratio of the active layers of oxide-semiconductor TFTs.

Quantitative X-ray Diffraction Analysis of Synthetic Mineral Mixtures Including Amorphous Silica using the PONKCS Method (PONKCS 방법을 이용한 비정질 실리카 함유 인공광물혼합시료의 정량 X-선회절 분석)

  • Chon, Chul-Min;Lee, Sujeong;Lee, Sung Woo
    • Journal of the Mineralogical Society of Korea
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    • v.26 no.1
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    • pp.27-34
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    • 2013
  • X-ray powder diffraction is one of the most powerful techniques for qualitative and quantitative analysis of crystalline compounds. Thus, there exist a number of different methods for quantifying mineral mixtures using X-ray diffraction pattern. We present here the use of Rietveld and PONKCS (partial or no known crystal structure) methods for quantification of amorphous and crystallized mineral phases in synthetic mixtures of standard minerals (amorphous silica, quartz, mullite and corundum). Pawley phase model of amorphous silica was successfully built from the pattern of 100 wt% amorphous silica and internal standard-spiked samples by PONKCS approach. The average of absolute bias for quantities of amorphous silica was 1.85 wt%. The larger bias observed for lower quantities of amorphous silica is probably explained by low intensities of diffraction pattern. Averages of absolute bias for minerals were 0.53 wt% for quartz, 0.87 wt% for mullite and 0.57 wt% for corundum, respectively. The PONKCS approach achieved improved quantitative results compared with classical Rietveld method by using an internal standard.

Synthesis and Crystal Structure of Amorphous Calcium Carbonate by Gas-Liquid Reaction of System CaO-$C_2 H_5 OH$-$CO_2$ (CaO-$C_2 H_5 OH$-$CO_2$계의 기.액반응에 의한 비정질 탄산칼슘의 합성 및 결정구조)

  • Im, Jae-Seok;Im, Goeng
    • The Journal of Engineering Research
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    • v.6 no.1
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    • pp.97-109
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    • 2004
  • The synthesis and crystal structure of amorphous calcium carbonate obtained from gas-liquid reaction of CaO-$C_2 H_5 OH$-$CO_2$ system according to change of added amount of calcium oxide by blowing $CO_2$ gas and reaction time using ethanol and ethylene glycol were investigated by electric conductivity, X-ray diffraction, and scanning electron microscope. The powdery or gelatinous phases were prepared by passing $CO_2$ gas at a flow rate of 1$\ell$/min into the suspensions containing 10~40g of CaO in mixing solutions 900ml of $C_2 H_5 OH$- and 100ml of ethylene glycol. By rapid filtration and drying the both phases at $60^{\circ}C$ under reduced pressure, the phases converted to the spherical vaterite and amorphous phase. The stable phase of amorphous calcium carbonate(ACC) was formed in the region pH 7-9 but the formation regions of amorphous phase were remarkably affected by pH in the mother liquor. It seems that a part of ACC changed into chain calcite as an intermediate products. The initial reactants prior to the formation of precipitated calcium carbonate is ACC. And ACC is unstable in the aqueous solution and crystallizes finally to calcite by the through-solution reaction. Especially ACC was produced or gelatinous phase which precipitated from the reaction of CaO-$C_2 H_5 OH$-$CO_2$ system.

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Effect of Surfactant in Electroless Ni-B Plating for Coating on the Diamond Powder (다이아몬드 분말상에 무전해 Ni-B 도금을 위한 계면활성제의 영향)

  • Yang, Changyol;Yu, Si-Young;Moon, Hwan-Gyun;Lee, Jung-Ho;Yoo, Bongyoung
    • Journal of the Korean institute of surface engineering
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    • v.50 no.3
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    • pp.177-182
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    • 2017
  • The properties of electroless Ni-B thin film on diamond powder with different parameters (temperature, pH, surfactant etc.) were studied. The surface morphology, structure and composition distribution of the Ni-B film were observed by field effect scanning electron microscope (FE-SEM), energy-dispersive spectrometer (EDS), X-ray diffraction (XRD) and Auger electron spectroscopy (AES). The growth rate of Ni-B film was increased with increase of bath temperature. The B content in Ni-B film was reduced with increase of bath pH. As a result the structure of Ni-B film was changed from amorphous to crystalline structure. The PVP in solution plays multi-functional roles as a dispersant and a stabilizer. The Ni-B film deposited with adding 0.1 mM-PVP was strongly introduced an amorphous structure with higher B content (25 at.%). Also the crystallite size of Ni-B film was reduced from 12.7 nm to 5.4 nm.

Synthesis and Analysis of Ge2Sb2Te5 Nanowire Phase Change Memory Devices

  • Lee, Jun-Yeong;Kim, Jeong-Hyeon;Jeon, Deok-Jin;Han, Jae-Hyeon;Yeo, Jong-Seok
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.222.2-222.2
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    • 2015
  • A $Ge_2Sb_2Te_5$ nanowire (GST NW) phase change memory device is investigated with Joule heating electrodes. GST is the most promising phase change materials, thus has been studied for decades but atomic structure transition in the phase-change area of single crystalline phase-change material has not been clearly investigated. We fabricated a phase change memory (PCM) device consisting of GST NWs connected with WN electrodes. The GST NW has switching performance with the reset/set resistance ratio above $10^3$. We directly observed the changes in atomic structure between the ordered hexagonal close packed (HCP) structure and disordered amorphous phase of a reset-stop GST NW with cross-sectional STEM analysis. Amorphous areas are detected at the center of NW and side areas adjacent to heating electrodes. Direct imaging of phase change area verified the atomic structure transition from the migration and disordering of Ge and Sb atoms. Even with the repeated phase transitions, periodic arrangement of Te atoms is not significantly changed, thus acting as a template for recrystallization. This result provides a novel understanding on the phase-change mechanism in single crystalline phase-change materials.

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Structure Development and Dynamic Properties in High-speed Spinning of High Molecular Weight PEN/PET Copolyester Fibers

  • Im, Seung-Soon;Kim, Sung-Joong
    • Fibers and Polymers
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    • v.3 no.1
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    • pp.18-23
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    • 2002
  • The structure development and dynamic properties of fibers produced by high-speed spinning of P(EN-ET) random copolymers were investigated. The as-spun fibers were found to remain amorphous up to the spinning speed of 1500 m/min, and subsequent increases in speed resulted in the crystalline domains containing primarily $\alpha$ crystalline modification of PEN. The f modification was not found up to spinning speeds of 4500 m/min. On the other hand, annealing of constrained fibers spun at the 2100 m/min at 180,200, and 240^{\circ}C$ exhibited $\beta$-form crystalline structure, while the annealed fibers spun in 600-1500 m/min range exhibited dominantly $\alpha$-form. However $\beta$-form crystals disappeared above the spinning speed of 3000 m/min. With increasing spinning speeds from 600 to 4500 m/min, the storage modulus of as-spun fibers increased continuously and reached a value of about 10.4 spa at room temperature. The tan $\delta$curves showed the $\alpha$-relaxation peak at about 155-165^{\circ}C$, which is considered to correspond to the glass transition. The $\alpha$-relaxation peaks became smaller and broader, and shift to higher temperatures as the spinning speed increases, meaning that molecular mobility in the amorphous region is restricted by increased crystalline domain.

Annealing Effect of Co/Pd Multilayers on Magnetic Properties During Interdifusion

  • Kim, Jai-Young;Jan E. Evetts
    • Journal of Magnetics
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    • v.2 no.4
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    • pp.147-156
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    • 1997
  • An artificially modulated magnetic Co/Pd multilayer is one of the promising candidates for high density magneto-optic (MO) recording media, due to a large Kerr rotation angle in the wavelength of a blue laser beam. However, since multilayer structure, as well as amorphous structure, is a non-equilibrium state in terms of free energy and a MO recording technology is a kind of thermal recording which is conducted around Curie temperature (Tc) of the recording media, when the Co/Pd mulilayer is used for the MO recording media, changes in the magnetic properties are occurred as the amorphous structure do. Therefore, the assessment of the magnetic properties in the Co/Pd multilayer during interdiffusion is crucially important both for basic research and applications. As the parameter of the magnetic properties in this research, saturation magnetization and perpendicular magnetic anisotropy energy of the Co/Pd multilayer are measured in terms of Ar sputtering pressure and heat treatment temperature. Form the results of the research, we find out that the magnetic exchange energy between Co and Pd sublayers strongly affects the changes in the magnetic properties of the Co/Pd multilayers during the interdiffusion in ferromagnetic state. This discovery will provide the understanding of the magnetic exchange energy in the Co/Pd multilayer structure and suggest the operating temperature range for MO recording in the Co/Pd multilayer for the basic research and applications, respectively.

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Miscibility Gap in Cu-Zr-Ag Alloy System and its Effect on the Structure and Plasticity of Metallic Glass (Cu-Zr-Ag계 비정질 합금의 불혼화 영역이 구조 및 소성에 미치는 영향)

  • Lee, Jin-ju;Park, Kyoung-Won;Kim, Do-Hyang;Fleury, Eric
    • Korean Journal of Metals and Materials
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    • v.49 no.12
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    • pp.930-936
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    • 2011
  • In the present study, we show that the addition of Ag, an element having a positive enthalpy of mixing with Cu in the liquid state, enables the simultaneous enhancement of the glass forming ability and the plasticity in Cu-Zr-Ag bulk metallic glasses (BMGs). Rods of 4 mm diameter could be prepared with a fully amorphous structure and values of plastic strain up to 18% were measured under a compression mode for compositions around $Cu_{42.5}Zr_{47.5}Ag_{10}$. The possible role of Ag in the change of the atomic structure and the enhancement of the plastic strain in the ternary Cu-Zr-Ag BMGs is discussed based on analyses from transmission electron microscopy and EXAFS (extended X-ray absorption fine structure).

Selective Wet-Etching Properties of GeSbTe Phase-Change Films (GeSbTe 상변화 박막의 선택적 에칭 특성)

  • Kim, Jin-Hong;Lim, Jung-Shik;Lee, Jun-Seok
    • Transactions of the Society of Information Storage Systems
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    • v.3 no.3
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    • pp.118-122
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    • 2007
  • Phase-change wet-etching technology using GeSbTe phase-change films is developed. Selective etching between an amorphous and a crystalline phase can be carried out with an alkaline etchant of NaOH. Etching selectivity is dependent not only on the concentration of the alkaline etchant but also on the film structure. Specifically, metal films for heat control cause marked effects on the etching properties of GeSbTe film. Surviving amorphous pits can be obtained with Al metal layer, however etched amorphous pits are seen with Ag metal layer. An opposite selective etching behavior can be observed between samples with two different metal layers.

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