• Title/Summary/Keyword: amorphous and crystalline

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Strain induced/enhanced ferromagnetism in $Mn_3Ge_2$thinfilms

  • Dung, Dang Duc;Feng, Wuwei;Thiet, Duong Van;Sin, Yu-Ri-Mi;Jo, Seong-Rae
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.135-135
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    • 2010
  • In Mn-Ge equilibrium phase diagram, many Mn-Ge intermetallic phases can be formed with difference structures and magnetic properties. The MnGe has the cubic structure and antiferromagnetic(AFM) with Neel temperature of 197 K. The calculation predicted that the $MnGe_2$ with $Al_2Cu$-type is hard to separate between the paramagnetic(PM) states and the AFM states because this compound displays PM and AFM configuration swith similar energy. Mn-doped Ge showed the FM with Currie temperature of 285 K for bulk samples and 116 K for thin films. In addition, the $Mn_5Ge_3$ compound has hexagonal structure and FM with Curie temperature around 296K. The $Mn_{11}Ge_8$ compound has the orthorhombic structure and Tc is low at 274 K and spin flopping transition is near to 140 K. While the bulk $Mn_3Ge_2$ exhibited tetragonal structure ($a=5.745{\AA}$;$c=13.89{\AA}$) with the FM near to 300K and AFM below 150K. However, amorphous $Mn_3Ge_2$ ($a-Mn_3Ge_2$) was reported to show spin glass behavior with spin-glass transition temperature (Tg) of 53 K. In addition, the transition of crystalline $Mn_3Ge_2$ shifts under high pressure. At the atmospheric pressure, $Mn_3Ge_2$ undergoes the magnetic phase transition from AFM to FM at 158 K. The pressure dependence of the phase transition in $Mn_3Ge_2$ has been determined up to 1 GPa. The transition was found to occur at 1 GPa and 155 K with dT/dP=-0.3K/0.1 GPa. Here report that Ferromagnetic $Mn_3Ge_2$ thin films were successfully grown on GaAs(001) and GaSb(001) substrates using molecular beam epitaxy. Our result revealed that the substrate facilitates to modify magnetic and electrical properties due to tensile/compressive strain effect. The spin-flopping transition around 145 K remained for samples grown on GaSb(001) while it completely disappeared for samples grown on GaAs(001). The antiferromagnetism below 145K changed to ferromagnetism and remained upto 327K. The saturation magnetization was found to be 1.32 and $0.23\;{\mu}B/Mn$ at 5 K for samples grown on GaAs(001) and GaSb(001), respectively.

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Partial purification and Properties of Alkaline Cellulase from Pseudomonas sp. AC-711 (Pseudomonas sp. AC-711이 생산하는 알칼리성 Cellulase의 부분정제 및 효소적 성질)

  • Yoon, Min-Ho;Lim, Sang-Ho;Choi, Woo-Young
    • Korean Journal of Agricultural Science
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    • v.25 no.1
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    • pp.131-137
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    • 1998
  • The cellulase components were partially purified from the culture filtrate of the alkalophilic bacterium Pseudomonas sp. AC-711 and its enzymatic properties were characterized. The specific activity of the purified major enzyme component was 3.5 units/mg protein as carboxymethyl cellulase and the yield was 23% of the total activity of the culture broth. The molecular weight of the component was 46,000 and the Km and Vmax on CMC were determined as $15.4mg\;mL^{-1}$ and $4.17{\mu}moles\;mL^{-1}\;min^{-1}$, respectively. The enzyme was stable at the temperatures below $60^{\circ}C$ and at the pH range of 4.0~11.0, and the optimal temperature and pH were $60^{\circ}C$ and pH 8.0, respectively. The enzyme activity was not significantly affected by the common surfactants (concentration: 0.05%) such as ${\alpha}$-olefin sulfonate, linear alkylbenzene sulfonate, sodium dodecyl sulfonate, hexadecyltrimethylammonium bromide and Tween 80. The enzyme was activated by the metal ions such as $Ca^{2+}$, $Cu^{2+}$, $Co^{2+}$, whereas inhibited by $Hg^{2+}$ and $Zn^{2+}$. The enzyme exhibited relatively high activity toward amorphous CMC as compared with crystalline substrates such as filter paper and avicel.

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Polarization Precession Effects for Shear Elastic Waves in Rotated Solids

  • Sarapuloff, Sergii A.
    • Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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    • 2013.04a
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    • pp.842-848
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    • 2013
  • Developments of Solid-State Gyroscopy during last decades are impressive and were based on thin-walled shell resonators like HRG or CRG made from fused quartz or leuko-sapphire. However, a number of design choices for inertial-grade gyroscopes, which can be used for high-g applications and for mass- or middle-scale production, is still very limited. So, considerations of fundamental physical effects in solids that can be used for development of a miniature, completely solid-state, and lower-cost sensor look urgent. There is a variety of different types of bulk acoustic (elastic) waves (BAW) in anisotropic solids. Shear waves with different variants of their polarization have to be studied especially carefully, because shear sounds in glasses and crystals are sensitive to a turn of the solid as a whole, and, so, they can be used for development of gyroscopic sensors. For an isotropic medium (for a glass or a fine polycrystalline body), classic Lame's theorem (so-called, a general solution of Elasticity Theory or Green-Lame's representation) has been modified for enough general case: an elastic medium rotated about an arbitrary set of axes. Travelling, standing, and mixed shear waves propagating in an infinite isotopic medium (or between a pair of parallel reflecting surfaces) have been considered too. An analogy with classic Foucault's pendulum has been underlined for the effect of a turn of a polarizational plane (i.e., an integration effect for an input angular rate) due to a medium's turn about the axis of the wave propagation. These cases demonstrate a whole-angle regime of gyroscopic operation. Single-crystals are anisotropic media, and, therefore, to reflect influence of the crystal's rotation, classic Christoffel-Green's tensors have been modified. Cases of acoustic axes corresponding to equal velocities for a pair of the pure-transverse (shear) waves have of an evident applied interest. For such a special direction in a crystal, different polarizations of waves are possible, and the gyroscopic effect of "polarizational precession" can be observed like for a glass. Naturally, formation of a wave pattern in a massive elastic body is much more complex due to reflections from its boundaries. Some of these complexities can be eliminated. However, a non-homogeneity has a fundamental nature for any amorphous medium due to its thermodynamically-unstable micro-structure, having fluctuations of the rapidly-frozen liquid. For single-crystalline structures, blockness (walls of dislocations) plays a similar role. Physical nature and kinematic particularities of several typical "drifts" in polarizational BAW gyros (P-BAW) have been considered briefly too. They include irregular precessions ("polarizational beats") due to: non-homogeneity of mass density and elastic moduli, dissymmetry of intrinsic losses, and an angular mismatch between propagation and acoustic axes.

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Fabrication and Characterization of Lead Oxide (PbO) Film for High Efficiency X-ray Detector (고효율 X선 검출기 적용을 위한 PbO 필름 제작 및 특성 연구)

  • Cho, Sung-Ho;Kang, Sang-Sik;Choi, Chi-Won;Kwun, Chul;Nam, Sang-Hee
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.329-329
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    • 2007
  • Photoconductive poly crystalline lead oxide coated on amorphous thin film transistor (TFT) arrays is the best candidate for direct digital x-ray detector for medical imaging. Thicker films with lessening density often show lower x-ray induced charge generation and collection becomes less efficient. In this work, we present a new methodology used for the high density deposition of PbO. We investigate the structural properties of the films using X-ray diffraction and electron microscopy experiments. The film coatings of approximately $200\;{\mu}m$ thickness were deposited on $2"{\times}2"$ conductive-coated glass substrates for measurements of dark current and x-ray sensitivity. The lead oxide (PbO) films of $200\;{\mu}m$ thickness were deposited on glass substrates using a wet coating process in room temperature. The influence of post-deposition annealing on the characteristics of the lead oxide films was investigated in detail. X-ray diffraction and scanning electron microscopy, and atomic force microscopy have been employed to obtain information on the morphology and crystallization of the films. Also we measured dark current, x-ray sensitivity and linearity for investigation of the electrical characteristics of films. It was found that the annealing conditions strongly affect the electrical properties of the films. The x-ray induced output charges of films annealed in oxygen gas increases dramatically with increasing annealing temperatures up to $500^{\circ}C$ but then drops for higher temperature anneals. Consequently, the more we increase the annealing temperatures, the better density and film quality of the lead oxide. Analysis of this data suggests that incorporation and decomposition reactions of oxygen can be controlled to change the detection properties of the lead oxide film significantly. Post-deposition thermal annealing is also used for densely film. The PbO films that are grown by new methodology exhibit good morphology of high density structure and provide less than $10\;pA/mm^2$ dark currents as they show saturation in gain (at approximate fields of $4\;V/{\mu}m$). The ability to operate at low voltage gives adequate dark currents for most applications and allows voltage electronics designs.

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Synthesis and Characterization of Si-C-N Precursor by Using Chemical Vapor Condensation Method (화학기상응축법을 이용한 Si-C-N Precursor 분말의 합성 및 특성평가)

  • Kim, Hyoung-In;Kim, Dae-Jung;Hong, Jin-Seok;So, Myoung-Gi
    • Journal of the Korean Ceramic Society
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    • v.39 no.8
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    • pp.783-788
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    • 2002
  • In this study, nano-sized Si-C-N precursor powders were synthesized by Chemical Vapor Condensation Method(CVC) using TMS(Tetramethylsilane: Si($CH_3)_4$), $NH_3$ and $H_2$ gases under the various reaction conditions of the reaction temperature, TMS/$NH_3$ ratio and TMS/$H_2$ ratio. XRD and FESEM were used to analysis the crystalline phase and the average particle size of the synthesized powders. It was found that the obtained powders under the considering conditions were all spherical amorphous powder with the particle size of 87∼130 nm. The particle size was decreased as the reaction temperature increased and TMS/$NH_3$ and TMS/$H_2$ ratio decreased. As the results of EA analysis, it was found that the synthesized powders had been formed the powders composed of Si, N, C and H. Through FT-IR results, it was found that the synthesized powders were Si-C-N precursor powders with Si-C, Si-N and C-N bonds.

Synthesis of Uniformly Doped Ge Nanowires with Carbon Sheath

  • Kim, Tae-Heon;;Choe, Sun-Hyeong;Seo, Yeong-Min;Lee, Jong-Cheol;Hwang, Dong-Hun;Kim, Dae-Won;Choe, Yun-Jeong;Hwang, Seong-U;Hwang, Dong-Mok
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.289-289
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    • 2013
  • While there are plenty of studies on synthesizing semiconducting germanium nanowires (Ge NWs) by vapor-liquid-solid (VLS) process, it is difficult to inject dopants into them with uniform dopants distribution due to vapor-solid (VS) deposition. In particular, as precursors and dopants such as germane ($GeH_4$), phosphine ($PH_3$) or diborane ($B_2H_6$) incorporate through sidewall of nanowire, it is hard to obtain the structural and electrical uniformity of Ge NWs. Moreover, the drastic tapered structure of Ge NWs is observed when it is synthesized at high temperature over $400^{\circ}C$ because of excessive VS deposition. In 2006, Emanuel Tutuc et al. demonstrated Ge NW pn junction using p-type shell as depleted layer. However, it could not be prevented from undesirable VS deposition and it still kept the tapered structures of Ge NWs as a result. Herein, we adopt $C_2H_2$ gas in order to passivate Ge NWs with carbon sheath, which makes the entire Ge NWs uniform at even higher temperature over $450^{\circ}C$. We can also synthesize non-tapered and uniformly doped Ge NWs, restricting incorporation of excess germanium on the surface. The Ge NWs with carbon sheath are grown via VLS process on a $Si/SiO_2$ substrate coated 2 nm Au film. Thin Au film is thermally evaporated on a $Si/SiO_2$ substrate. The NW is grown flowing $GeH_4$, HCl, $C_2H_2$ and PH3 for n-type, $B_2H_6$ for p-type at a total pressure of 15 Torr and temperatures of $480{\sim}500^{\circ}C$. Scanning electron microscopy (SEM) reveals clear surface of the Ge NWs synthesized at $500^{\circ}C$. Raman spectroscopy peaked at about ~300 $cm^{-1}$ indicates it is comprised of single crystalline germanium in the core of Ge NWs and it is proved to be covered by thin amorphous carbon by two peaks of 1330 $cm^{-1}$ (D-band) and 1590 $cm^{-1}$ (G-band). Furthermore, the electrical performances of Ge NWs doped with boron and phosphorus are measured by field effect transistor (FET) and they shows typical curves of p-type and n-type FET. It is expected to have general potentials for development of logic devices and solar cells using p-type and n-type Ge NWs with carbon sheath.

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Corrosion of castable refractory in H2O/N2/H2S mixed gas at 900℃ (H2O/N2/H2S 혼합가스 분위기 900℃에서 캐스타블 내화물의 부식)

  • Shin, Min;Yoon, Jong-Won;Kim, Chang-Sam
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.27 no.2
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    • pp.99-104
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    • 2017
  • Refractories used in low-rank coal gasification reactors are usually exposed in a highly corrosive $H_2S$ gas at less than $1000^{\circ}C$, and their mechanical properties such as erosion resistance and fracture strength decline with the exposure time. However, the cause of the degradation of the mechanical properties has little reported yet. In this paper, two kinds of castable refractories with different refractoriness had been exposed in a $H_2O/N_2/H_2S$ mixed gas with high $H_2S$ content for 100 hours at $900^{\circ}C$, and the changes of microstructure, crystalline phases and erosion resistance were compared before and after the corrosion test. The weight of the refractories decreases due to the elution of silica in the specimens after the corrosion test. The capillary porosities of the samples are reduced, but the erosion resistance of the samples is fatally weakened after the corrosion test. There also are changes in constituent phases; dmitryivanovite ($CaAl_2O_4$) and amorphous silica ($SiO_2$) disappear, and gypsum ($CaSO_4{\cdot}2H_2OS$) and kaolinite ($Al_2Si_2O_5(OH)_4$) newly appear after the corrosion test. It is obvious that the phase change from dmitryivanovite that works as a binding agent in the castable refractory to gypsum is the main reason of the degradation of the erosion resistance, because the mechanical properties of gypsum are much poorer than those of dmitryivanovite.

Influence of Water Infiltration and Flexural Strength Change with Glazing Treatment of Dental Porcelain (치과도재의 Glazing 여부에 따른 수분침투 정도와 굽힘강도에 미치는 영향)

  • Lee, Ju-Hee;Lee, Chae-Hyun;Song, Jeong-Hwan
    • Journal of dental hygiene science
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    • v.17 no.4
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    • pp.358-367
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    • 2017
  • The purpose of this study was to evaluate the influence of water infiltration and flexural strength changes in dental porcelain with glazing treatment. The block specimens were prepared as experimental materials, using feldspar type commercial dental porcelain; then, these were fired at $940^{\circ}C$ for 1 minute. The fired specimens were polished with a dimension of $40{\times}5.5{\times}5mm$. The specimens were distributed to two experimental groups: with and without glazing treatment specimens (n=5), and they were immersed in a solution of pH 7 for 3, 7, and 20 days at $40^{\circ}C$ after fabrication. To evaluate the flexural strength changes with water infiltration treatment in specimens with and without glazing, the 3-point flexural test was performed, using a universal testing machine until failure occurred. Starting powder and fired specimens consisted of amorphous and leucite crystalline phase. The Vickers hardness of fired specimens was more than 1.6 times higher than that of the enamel of natural teeth. According to porosimeter results, the specimens without glazing treatment exhibited a porosity of about 14.7%, whereas the glazed specimens exhibited the lowest porosity at about 1.1%. The average flexural strength of glazed specimens was higher than the flexural strength of specimens without glazing treatment (p<0.05). The flexural strength of all specimens with and without glazing treatment deteriorated with accelerated aging in the solution. In addition, significant differences between these two treatment groups were observed in all of the specimens treated at various water infiltration periods (p<0.05). The exposure of internal pores and micro-cracks in the surface due to polishing of the fired specimens influenced mechanical behaviors. Especially, the flexural strength in specimens without glazing treatment has shown significant degradation with the infiltration of water. Therefore, this study suggests that glazing processes can improve mechanical properties of dental porcelain.

Magnetic Properties of Co-substituted Ba-ferrite Powder by Sol-gel Method (졸-겔법에 의한 Cobalt 치환된 Ba-ferrite 분말의 자기적 특성)

  • Choi, Hyun-Seung;Park, Hyo-Yul;Yoon, Seog-Young;Shin, Hak-Gi;Kim, Tae-Ok
    • Journal of the Korean Ceramic Society
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    • v.39 no.8
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    • pp.789-794
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    • 2002
  • In this study, nano-sized Si-C-N precursor powders were synthesized by Chemical Vapor Condensation Method(CVC) using TMS(Tetramethylsilane: $Si(CH_3)_4$), $NH_3$ and $H_2$ gases under the various reaction conditions of the reaction temperature, TMS/$NH_3$ ratio and TMS/$H_2$ ratio. XRD and FESEM were used to analysis the crystalline phase and the average particle size of the synthesized powders. It was found that the obtained powders under the considering conditions were all spherical amorphous powder with the particle size of 87∼130 nm. The particle size was decreased as the reaction temperature increased and TMS/$NH_3$ and TMS/$H_2$ ratio decreased. As the results of EA analysis, it was found that the synthesized powders had been formed the powders composed of Si, N, C and H. Through FT-IR results, it was found that the synthesized powders were Si-C-N precursor powders with Si-C, Si-N and C-N bonds.

Effects of Addition of Sulfuric Acid on the Etching Behavior of Al foil for Electrolytic Capacitors II. Microstructures of Dielectric Layers and AC Impedance Analysis (전해 콘텐사용 알루미늄박의 애칭특성에 미치는 황산첨가의 영향 II. 유전층의 조직 및 임피던스 분석)

  • Kim, Seong-Gap;Yu, In-Jong;Sin, Dong-Cheol;O, Han-Jun;Ji, Chung-Su
    • Korean Journal of Materials Research
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    • v.10 no.5
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    • pp.375-381
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    • 2000
  • Aluminium foil for electrolytic capacitors was anodized at the voltage of 100V and 140V for 10 minutes in ammonium adipate solution to form aluminum oxide layer on aluminum substrate as an dielectric film. The thickness, the stoichiometry and the crystal structure of the layer were investigated by using RBS and TEM . In addition EIS technique was employed to study the effects of addition of sulfuric acid on the increment of the foil surface area. It was found that the thickness values of the layers anodized at 100V and 140V were about 130 nm and 190 nm respectively and the stoichiometry of the elements of aluminum and oxygen was 2:3. The anodic oxide layer was shown to be amorphous. but the structure irradiated with electron beam resulted in the transformation into crystalline structure of $${\gamma}$-Al_2$$O_3$ . From a comparison of the impedance results and the capacitance variation to investigate the ef- fects of sulfuric acid addition to the etching bath of hydrochloric acid, the EIS techinque could be useful to analyze the capacitance variation.

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