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http://dx.doi.org/10.4191/KCERS.2002.39.8.783

Synthesis and Characterization of Si-C-N Precursor by Using Chemical Vapor Condensation Method  

Kim, Hyoung-In (Department of the Advanced Materials Science and Engineering, Kangwon National University)
Kim, Dae-Jung (Department of the Advanced Materials Science and Engineering, Kangwon National University)
Hong, Jin-Seok (Department of the Advanced Materials Science and Engineering, Kangwon National University)
So, Myoung-Gi (Department of the Advanced Materials Science and Engineering, Kangwon National University)
Publication Information
Journal of the Korean Ceramic Society / v.39, no.8, 2002 , pp. 783-788 More about this Journal
Abstract
In this study, nano-sized Si-C-N precursor powders were synthesized by Chemical Vapor Condensation Method(CVC) using TMS(Tetramethylsilane: Si($CH_3)_4$), $NH_3$ and $H_2$ gases under the various reaction conditions of the reaction temperature, TMS/$NH_3$ ratio and TMS/$H_2$ ratio. XRD and FESEM were used to analysis the crystalline phase and the average particle size of the synthesized powders. It was found that the obtained powders under the considering conditions were all spherical amorphous powder with the particle size of 87∼130 nm. The particle size was decreased as the reaction temperature increased and TMS/$NH_3$ and TMS/$H_2$ ratio decreased. As the results of EA analysis, it was found that the synthesized powders had been formed the powders composed of Si, N, C and H. Through FT-IR results, it was found that the synthesized powders were Si-C-N precursor powders with Si-C, Si-N and C-N bonds.
Keywords
Si-C-N Precursor powder; Chemical Vapor Condensation Method(CVC);
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