• Title/Summary/Keyword: amorphous/crystalline Si

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Synthesis of Borosilicate Zeotypes by Steam-assisted Conversion Method (수증기 쪼임법에 의한 제올라이트형 보로실리케이트 제조방법)

  • Mansour, R.;Lafjah, M.;Djafri, F.;Bengueddach, A.
    • Journal of the Korean Chemical Society
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    • v.51 no.2
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    • pp.178-185
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    • 2007
  • Intermediate pentasil borosilicate zeolite-like materials have been crystallized by a novel method named steam-assisted conversion, which involves vapor-phase transport of water. Indeed, amorphous powders obtained by drying Na2O.SiO2.B2O3.TBA2O gels of various compositions using different boron sources are transformed into crystalline borosilicate zeolite belonging to pentasil family structure by contact with vapors of water under hydrothermal conditions. Using a variant of this method, a new material which has an intermediate structure of MFI/MEL in the ratio 90:10 was crystallized. The results show that steam and sufficiently high pH in the reacting hydrous solid are necessary for the crystallization to proceed. Characterization of the products shows some specific structural aspects which may have its unique catalytic properties. X-ray diffraction patterns of these microporous crystalline borosilicates are subjected to investigation, then, it is shown that the product structure has good crystallinity and is interpreted in terms of regular stacking of pentasil layers correlated by inversion centers (MFI structure) but interrupted by faults consisting of mirror-related layers (MEL structure). The products are also characterized by nitrogen adsorption at 77 K that shows higher microporous volume (0.160 cc/g) than that of pure MFI phase (0.119 cc/g). The obtained materials revealed high surface area (~600 m2/g). The infrared spectrum reveals the presence of an absorption band at 900.75 cm-1 indicating the incorporation of boron in tetrahedral sites in the silicate matrix of the crystalline phase.

The optical properties of columnar structure according to the growth angles of ZnO thin fims (성장각도에 따른 주상구조 ZnO 박막의 광학적 특성)

  • Ko, Ki-Han;Seo, Jae-Keun;Kim, Jae-Kwang;Kang, Eun-Kyu;Park, Mun-Gi;Ju, Jin-Young;Shin, Yong-Deok;Choi, Won-Seok
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.11a
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    • pp.127-127
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    • 2009
  • The most important part of the fabrication solar cells is the anti-reflection coating when excludes the kinds of silicon substrates (crystalline, polycrystalline, or amorphous), patterns and materials of electrodes. Anti-reflection coatings reduce the reflection of sunlight and at last increase the intensity of radiation to inside of solar cells. So, we can obtain increase of solar cell efficiency about 10% using anti-reflection coating. There are many kinds of anti-reflection film for solar cell, such as SiN, $SiO_2$, a-Si, and so on. And, they have two functions, anti-reflection and passivation. However such materials could not perfectly prevent reflection. So, in this work, we investigated the anti-reflection coating with the columnar structure ZnO thin film. We synthesized columnar structure ZnO film on glass substrates. The ZnO films were synthesized using a RF magnetron sputtering system with a pure (99.95%) ZnO target at room temperature. The anti-reflection coating layer was sputtered by argon and oxygen gases. The angle of target and substrate measures 0, 20, 40, 60 degrees, the working pressure 10 mtorr and the 250 W of RF power during 40 minutes. The confirm the growth mechanism of ZnO on columnar structure, the anti-reflection coating layer was observed by field emission scanning electron microscopy (FE-SEM). The optical trends were observed by UV-vis and Elleso meter.

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Microstructures of HAp and HAp-Ag Composite Coating Layer Prepared by RS Magnetron Sputtering (RE Magnetron Sputtering에 의해 제조된 HAp와 HAp-Ag복합코팅층의 미세조직)

  • Lee, Hee-Jung;Oh, Ik-Hyun;Park, Sang-Shik;Lee, Byong-Taek
    • Journal of the Korean Ceramic Society
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    • v.41 no.4
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    • pp.328-333
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    • 2004
  • Hydroxyapatite (HAp) and HAp-Ag composite layers were coated on ZrO$_2$and Si wafer substrates by RF magnetron sputtering technique. The thickness of coating layers was in the range of 0.7∼1.0$\mu\textrm{m}$ and its roughness was 3∼4nm. The heat treated HAp coating layers were composed with nano-sized crystallines. However, the HAp-Ag composite layers showed the mixed structure with crystalline and amorphous phases. The Ca/P ratio of the as-received HAp coating layer was 1.9, but, the value was decreased as the Ag content with increased. Also, the Vickers hardness of HAp coating layer decreased as the Ag content increase.

Fabrication and Characterization of Si Quantum Dots in a Superlattice by Si/C Co-Sputtering (실리콘과 탄소 동시 스퍼터링에 의한 실리콘 양자점 초격자 박막 제조 및 특성 분석)

  • Kim, Hyun-Jong;Moon, Ji-Hyun;Cho, Jun-Sik;Park, Sang-Hyun;Yoon, Kyung-Hoon;Song, Jin-Soo;O, Byung-Sung;Lee, Jeong-Chul
    • Korean Journal of Materials Research
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    • v.20 no.6
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    • pp.289-293
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    • 2010
  • Silicon quantum dots (Si QDs) in a superlattice for high efficiency tandem solar cells were fabricated by magnetron rf sputtering and their characteristics were investigated. SiC/$Si_{1-x}C_x$ superlattices were deposited by co-sputtering of Si and C targets and annealed at $1000^{\circ}C$ for 20 minutes in a nitrogen atmosphere. The Si QDs in Si-rich layers were verified by transmission electron microscopy (TEM) and X-ray diffraction. The size of the QDs was observed to be 3-6 nm through high resolution TEM. Some crystal Si and -SiC peaks were clearly observed in the grazing incident X-ray diffractogram. Raman spectroscopy in the annealed sample showed a sharp peak at $516\;cm^{-1}$ which is an indication of Si QDs. Based on the Raman shift the size of the QD was estimated to be 4-6 nm. The volume fraction of Si crystals was calculated to be about 33%. The change of the FT-IR absorption spectrum from a Gaussian shape to a Lorentzian shape also confirmed the phase transition from an amorphous phase before annealing to a crystalline phase after annealing. The optical absorption coefficient also decreased, but the optical band gap increased from 1.5 eV to 2.1 eV after annealing. Therefore, it is expected that the optical energy gap of the QDs can be controlled with growth and annealing conditions.

Phase Analysis and Magnetic Properties of $Fe_5Si_xB_{5-x}$ (x = 0, 1, 2, 3) Powders Prepared by Mechanical Alloying (기계적합금법으로 제조된 $Fe_5Si_xB_{5-x}$ (x = 0, 1, 2, 3) 분말의 상분석 및 자기적 특성)

  • Hwang, Yeon;Kim, Taek-Soo;Lee, Hyo-Sook
    • Journal of the Korean Magnetics Society
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    • v.7 no.6
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    • pp.293-298
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    • 1997
  • $Fe_5Si_Xb_{5-x}$ (x=0, 1, 2, 3) powders were prepared by mechanical alloying, and their phases and magnetic properties were investigated by using XRD, TEM, Mossbauer spectroscopy and VSM. Starting elements are incorporated into $\alpha$-Fe in the early stage of mechanical alloying, and the stable phases are formed as the milling proceeds. After the annealing at 80$0^{\circ}C$ for 2 hours, it is found that the FeB and $Fe_2B$ phases coexist for the $Fe_5B_5$(x=0) composition. By substituting Si for B, the formation of $Fe_2B$ phase is restricted and the $Fe_5SiB_2$, $Fe_2Si_{0.4}B_{0.6}$ and paramagnetic phase begin to appear. The FeB phase has wide range of hyperfine magnetic field because it is not fully crystallized on the annealing at 800 $^{\circ}C$. On the contrary, others have good crystalline phases and show well-defined hyperfine magnetic field. Magnetic saturation is highest for the $Fe_5B_5$ composition where the amount of the $Fe_2B$ phase in large.

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Magnetic Properties of Co-substituted Ba-ferrite Powder by Sol-gel Method (졸-겔법에 의한 Cobalt 치환된 Ba-ferrite 분말의 자기적 특성)

  • Choi, Hyun-Seung;Park, Hyo-Yul;Yoon, Seog-Young;Shin, Hak-Gi;Kim, Tae-Ok
    • Journal of the Korean Ceramic Society
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    • v.39 no.8
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    • pp.789-794
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    • 2002
  • In this study, nano-sized Si-C-N precursor powders were synthesized by Chemical Vapor Condensation Method(CVC) using TMS(Tetramethylsilane: $Si(CH_3)_4$), $NH_3$ and $H_2$ gases under the various reaction conditions of the reaction temperature, TMS/$NH_3$ ratio and TMS/$H_2$ ratio. XRD and FESEM were used to analysis the crystalline phase and the average particle size of the synthesized powders. It was found that the obtained powders under the considering conditions were all spherical amorphous powder with the particle size of 87∼130 nm. The particle size was decreased as the reaction temperature increased and TMS/$NH_3$ and TMS/$H_2$ ratio decreased. As the results of EA analysis, it was found that the synthesized powders had been formed the powders composed of Si, N, C and H. Through FT-IR results, it was found that the synthesized powders were Si-C-N precursor powders with Si-C, Si-N and C-N bonds.

Performance Evaluation of a-Si BIPV System According to Transmittance Variation (투과율에 따른 비정질실리콘 BIPV 시스템 효율 평가)

  • Cha, Kwangseok;Lee, Byoungdoo;Kim, Kangsuk;Shin, Seungchul;Lee, Daewoo
    • 한국신재생에너지학회:학술대회논문집
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    • 2010.06a
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    • pp.60.1-60.1
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    • 2010
  • 공동주택에서 태양광발전(PV)을 통한 세대 전기에너지 이용은 모듈 설치 면적의 제약으로 인해 전 세대를 대상으로 활용하기에 현실적으로 어려움이 있다. 특히 남향이나 남동, 남서향으로 위치한 거실 창호를 활용하는 경우에도 결정질 실리콘(crystalline silicon) 태양전지 셀로 인한 실내 음영문제 등으로 건물통합형 태양광발전(BIPV) 시스템의 가시성을 확보하는데 한계가 있다. 따라서 이런 문제점을 극복하고자 투광형 비정질실리콘(amorphous silicon) 태양전지를 이용한 발코니창호/커튼월 BIPV 시스템을 구축하고, 테스트베드를 통한 적용성 평가 검증을 수행하였다. 테스트베드는 KCC 중앙연구소 1층 외부 측창에 결정질 BIPV 모듈(A2PEAK 사(社), 최대 출력 210 Wp, W 2,000 mm ${\times}$ H 1,066 mm)과 10% 및 30% 투광형 비정질 BIPV 모듈(Sharp 사(社) See Through type, 최대 출력 135 Wp/123 Wp, W 1,930 mm ${\times}$ H 1,180 mm)을 각각 설치(남서 $30^{\circ}$, 수직 $90^{\circ}$)하여, 2009년 5월에서 8월 사이 4개월에 걸친 모니터링을 통해 실제 발전량 데이터를 확보, 시스템에 대한 분석을 진행하였다. 분석 결과, 설치용량당 일평균 발전량은 결정질형이 1.46 kWh/kWp, 10% 투광형은 1.10 kWh/kWp, 30% 투광형은 0.73 kWh/kWp을 나타내었다. 10% 투광형과 30% 투광형의 모듈 성능 차이는 크지 않으나 발전량에 있어서는 큰 차이를 보였고, 10% 투광형의 설치용량당 일평균 발전량은 경정질형의 75.2% 수준으로 투광형 비정질실리콘 BIPV 시스템의 창호 적용 가능성을 확인하였다. 특히 세대 거실 창호를 통한 가시성 확보는 기존 결정질 BIPV 창호의 단점을 개선하였다. 건자재 일체화로 구축된 가시성확보 BIPV시스템 창호는 단위 세대별 적용이 쉽고, 공동주택에서 PV 시스템의 설치면적을 극대화시키므로 향후 Zero Energy 공동주택 구축에도 활용성이 클 것으로 기대된다.

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Crystallopraphic Growth Orientation of Polycrystalline HSG Silicon Film (반구형 다결정 실리콘 박막의 결정학적 성장방위)

  • Sin, Dong-Won;Park, Chan-Ro;Park, Chan-Gyeong;Kim, Jong-Cheol
    • Korean Journal of Materials Research
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    • v.4 no.7
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    • pp.750-758
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    • 1994
  • The purpose of present study is to find out the formation mechanism of hemi-spherical grained(HSG) polysilicon film. Silicon film was deposited using LPCVD. Polycrystalline silicon film was deposited at $575^{\circ}C$ contained crystalline HSG in the amorphous matrix phase. The crystalline HSG can be categorized into two grains : lower grains and upper grains. Lower grains are located at interface between silicon dioxide and silicon film, and upper grains are located at surface. The growth orientations of HSG were identified as (311) or (111) directions for lower grains and perferentially (110) direction for upper grains. This difference of growth orientations seems to be caused by the difference of formation mechanisms. That is, lower grain is formed by soild phase crystallization, on the other hand, upper grain is formed by surface diffusion of silicon atoms. It was thus, proposed that the formation of practical HSG polysilicon film is mainly controlled by surface diffusion of silicon atoms.

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Quantum Chemical Calculations of the Effect of Si-O Bond Length on X-ray Raman Scattering Features for MgSiO3 Perovskite (양자화학계산을 이용한 Si-O 결합길이가 MgSiO3 페로브스카이트의 X-선 Raman 산란 스펙트럼에 미치는 영향에 대한 연구)

  • Yi, Yoo Soo;Lee, Sung Keun
    • Journal of the Mineralogical Society of Korea
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    • v.27 no.1
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    • pp.1-15
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    • 2014
  • Probing the electronic structures of crystalline Mg-silicates at high pressure is essential for understanding the various macroscopic properties of mantle materials in Earth's interior. Quantum chemical calculations based on the density functional theory are used to explore the atomic configuration and electronic structures of Earth materials at high pressure. Here, we calculate the partial density of states (PDOS) and O K-edge energy-loss near-edge structure (ELNES) spectra for $MgSiO_3$ perovskite at 25 GPa and 120 GPa using the WIEN2k program based on the full-potential linearized projected augmented wave (FP-LPAW) method. The calculated PDOS and O K-edge ELNES spectra for $MgSiO_3$ Pv show significant pressure-induced changes in their characteristic spectral features and relative peak intensity. These changes in spectral features of $MgSiO_3$ Pv indicate that the pressure-induced changes in local atomic configuration around O atoms such as Si-O, O-O, and Mg-O length can induce the significant changes on the local electronic structures around O atoms. The result also indicates that the significant changes in O K-edge features can results from the topological densification at constant Si coordination number. This study can provide a unique opportunity to understand the atomistic origins of pressure-induced changes in local electronic structures of crystalline and amorphous $MgSiO_3$ at high pressure more systematically.

Transmittance and work function enhancement of RF magnetron sputtered ITO:Zr films for amorphous/crystalline silicon heterojunction solar cell

  • Kim, Yongjun;Hussain, Shahzada Qamar;Kim, Sunbo;Yi, Junsin
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.295-295
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    • 2016
  • Recently, TCO films with low carrier concentration, high mobility and high work function are proposed beneficial as front electrode in HIT solar cell due to free-carrier absorption in NIR wavelength region and low Schottky barrier height in the front TCO/a-Si:H(p) interface. We report high transmittance and work function zirconium-doped indium tin oxide (ITO:Zr) films with various plasma (Ar/O2 and Ar) conditions. The role of (Ar/O2) plasma was to enhance the work function of the ITO:Zr films whereas the pure Ar plasma based ITO:Zr showed good electrical properties. The RF magnetron sputtered ITO:Zr films with low resistivity and high transmittance were employed as front electrode in HIT solar cells, yield the best performance of 18.15% with an open-circuit voltage of 710 eV and current density of 34.63 mA/cm2. The high work function ITO:Zr films can be used to modify the front barrier height of HIT solar cell.

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