• Title/Summary/Keyword: advanced lasers

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Two-Dimensional Photonic Crystal Lasers (2차원 광자결정 레이저)

  • Lee, Y. H.;J. K. Hwang;H. Y. Ryu
    • Proceedings of the Optical Society of Korea Conference
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    • 2000.08a
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    • pp.96-98
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    • 2000
  • Room-temperature continuous operation of two-dimensional photonic crystal lasers is achieved at 1.6 ${\mu}{\textrm}{m}$ by using InGaAsP slab-waveguide triangular photonic crystal on top of wet-oxidized aluminum oxide. The main difficulty in the realization of photonic bandgap (OBG) structures has been the nontrivial difficulties in nanofabrication, especially for 3-dimensional PBG structures. Recently, 2-D PBG structures have attracted a great deal of attention due to their simplicity in fabrication and theoretical study as compared to the three-dimensional counterparts [1]. Recently, air-gulfed 2-D slab PBG lasers were reported by Caltech group [2]. However, this air-slab structure is mechanically fragile and thermally unforgiving. Therefore, a new structure that can remove this thermal limitation is dearly sought after for 2-D PBG laser to have practical meaning. In this talk, we report room-temperature continuous operation of 2-D photonic bandgap lasers that are thermally and mechanically stable.

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Low-threshold Photonic Crystal Lasers from InGaAsP Free-standing Slab Structures

  • Ryu, Han-Youl;Kim, Se-Heom;Kwon, Soon-Hong;Park, Hong-Gyu;Lee, Yong-Hee
    • Journal of the Optical Society of Korea
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    • v.6 no.3
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    • pp.59-71
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    • 2002
  • Photonic band gap structures have a high potential for nearly zero-threshold lasers. This paper describes new-types of low-threshold photonic crystal lasers fabricated in InGaAsP slab waveguides free-standing in air. Two-types of photonic crystal lasers are studied. One is a single-cell nano-cavity laser formed in a square array of air holes. This photonic band gap laser operates in the smallest possible whispering gallery mode with a theoretical Q >30000 and exhibits low threshold pump power of 0.8 mW at room temperature. The nther laser does not have any cavity structure and the lasing operation originates from the enhanced optical density of states near photonic band edges. A very low threshold of 35 $\mu$W (incident pump power) is achieved from this laser at 80 K, one of the lowest values ever reported. This low threshold is benefited from low optical losses as well as enhanced material gain at low temperature.

Two-Dimensional Photonic Bandgap Nanolasers (2차원 광밴드갭 나노레이저)

  • Lee, Y. H.;Hwang, J-K;H.Y. Ryu;Park, H. K.;D. J. Shin
    • Proceedings of the Optical Society of Korea Conference
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    • 2001.02a
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    • pp.2-3
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    • 2001
  • Characteristics of two-dimensional slab photonic crystal lasers will be summarized. Room temperature c.w operation is demonstrated at 1.6 $\mu\textrm{m}$ by using InGaAsP slab-waveguide triangular photonic crystal on top of wet-oxidized aluminum oxide. Recently, 2-D PBG structures have attracted a great deal of attention due to their simplicity in fabrication and theoretical study as compared to the three-dimensional counterparts [1]. Air-guided 2-D slab PBG lasers were reported by Caltech group (2). However, this air-slab structure is mechanically fragile and thermally unforgiving. Therefore, a new structure that can remove this thermal limitation is dearly sought after for 2-D PBG laser to have practical meaning. In this talk, we report room-temperature continuous operation of 2-D photonic bandgap lasers that are thermally and mechanically stable.(omitted)

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High Power Lasers and Their New Applications

  • Izawa, Yasukazu;Miyanaga, Noriaki;Kawanaka, Junji;Yamakawa, Koichi
    • Journal of the Optical Society of Korea
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    • v.12 no.3
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    • pp.178-185
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    • 2008
  • Recent progress in high power lasers enables us to access a regime of high-energy-density and/or ultra-strong fields that was not accessible before, opening up a fundamentally new physical domain which includes laboratory astrophysics and laser nuclear physics. In this article, new applications of high-energy and ultra-intense laser will be reviewed.

A Cavity-Assisted Atom Detector (CAAD) (캐비티-유도된 원자측정 장치)

  • Chough, Young-Tak;Hyuncheol Nha;Kyungwon An
    • Proceedings of the Optical Society of Korea Conference
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    • 2000.02a
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    • pp.124-125
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    • 2000
  • We introduce a scheme with a maximized efficiency of detecting atoms passing through an optical standing-wave mode cavity. Consider a standing-wave optical cavity illuminated by a weak probe beam through one of its mirrors where the transmission through the other mirror is monitored by a photodetector. If an atom is put in the cavity, the atom-cavity coupling shifts the resonance frequency of the system via the so-called normal mode splitting, and thereby the transmission power will drop. In fact, this type of atom detection scheme has been used in recent single atom trap experiments In practice, however, the field in a standing-wave mode will have a geometrical structure having nodes and antinodes that when the atom traverses the cavity through one of the nodes, there will be no such effect of atom-field interaction. (omitted)

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InGaAs/InAlAs Quantum Cascade Lasers Grown by using Metal-organic Vapor-phase Epitaxy

  • Kim, Dong Hak;Jeong, Hae Yong;Choi, Young Su;Park, Deoksoo;Jeon, Young-Jin;Jun, Dong-Hwan
    • Applied Science and Convergence Technology
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    • v.26 no.5
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    • pp.139-142
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    • 2017
  • In this paper, InP-based InGaAs/InAlAs quantum cascade lasers(QCLs) providing nearly zero emission wavelength mismatch between the measured emission wavelength and the designed transition wavelength of QCLs is presented. The zero emission wavelength mismatch of QCLs influenced by both the accurate compositions and thicknesses of the low-pressure metal-organic vapor-phase epitaxy(MOVPE) grown InGaAs and InAlAs layers throughout the core and the abrupt composition transitions between InGaAs and InAlAs layers. The abrupt interfaces between InGaAs and InAlAs layers have been achieved throughout the core structure by means of controlling individually purged vent/run valves of a closed coupled showerhead reactor. In addition, maintaining substrate temperature constant during InGaAs/InAlAs core growth was a partial factor of uniformity improvement of QCLs. These approaches for reducing the possible discrepancies between the designed and MOVPE grown epitaxial structures could lead to improvement of QCL performance.

Atomic Fountain towards a single atom trap (단원자 포획을 위한 원자분수)

  • H. S. Rawat;S. H. Kwon;Kim, J. B.;K. An
    • Proceedings of the Optical Society of Korea Conference
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    • 2000.08a
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    • pp.74-75
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    • 2000
  • The past few decades have witnessed the development of very robust technique, known as magneto-optical trap(MOT), for cooling and trapping of neutral atoms using lasers and magnetic fields. This technique can easily produce cooled atoms to a temperature range of nano-kelvin $s^{(1)}$ . These laser cooled and trapped atoms have found applications in various fields, such as ultrahigh resolution spectroscopy, precision atomic clocks, very cold atomic collision physics, Bose-Einstein Condensation, the Atom laser, etc. Particularly, a few isolated atoms of very low temperature are needed in the cavity QED studies in the optical regime. One can obtain such atoms from a MOT using the atomic fountain technique. The widely used technique for atomic fountain is, first to cool and trap the neutral atoms in MOT. And then launch them in the vertical (1, 1, 1) direction with respect to cooling beams, using moving molasses technique. Recently, this technique combined with the cavity-QED has opened an active area of basic research. This way atoms can be strongly coupled to the optical radiation in the cavity and leads to various new effects. Trapping of single atom after separating it from MOT in the high Q-optical cavity is actively initiated presentl $y^{(2.3)}$. This will help to sharpen our understanding of atom-photon interaction at quantum level and may lead to the development of single-atom laser. Our efforts to develop an $^{85}$ Rb-atomic fountain is in progress. (omitted)

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Study on Implant Cleaning Effect of Lasers of Different Wavelengths (파장이 다른 레이저의 임플란트 세정 효과에 관한 연구)

  • Park, Eun Kyeong;Yang, Yun Seok;Lee, Ka Ram;Yoo, Young Tae
    • Journal of the Korean Society of Manufacturing Technology Engineers
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    • v.22 no.4
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    • pp.643-651
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    • 2013
  • This study applied a laser cleaning method (dry cleaning) that is used for cleaning semiconductor elements to dental implant cleaning. The lasers used in this study were pulsed fiber lasers with wavelengths of 1,064 and 532 nm. The peak output, energy per pulse, energy density per pulse, time of pulse experiment, and number of pulse experiments served as process variables for this study, and the variables were changed for each experiment. As a result, a laser with a wavelength of 532 nm showed much higher cleaning efficiency than its 1,064 nm counterpart. As the wavelength range decreased, the quantized energy increased and the reflection rate of the titanium used for the implant decreased; consequently, the energy absorption rate increased. Therefore, it is proposed that the energy density by wavelength has a greater influence on cleaning than does the output size.