• The Journal of the Acoustical Society of Korea
• /
• v.22 no.3
• /
• pp.217-223
• /
• 2003

A novel cooling method induced by acoustic streaming generated by ultrasonic vibration at 30㎑ is presented. Ultrasonic vibration is obtained by piezoelectric devices and the maximum vibration amplitude of 50 m is achieved by including a horn, mechanical vibration amplifier in the system and making the complete system resonate. To investigate the enhancement of heat transfer capability of acoustic streaming, the temperature variations of heat source and air in the vicinity of heat source are measured in real-time. It is observed that acoustic streaming is instantly induced by ultrasonic vibration, resulting in the significant temperature drop due to the bulk air flow caused by acoustic streaming. In addition, it is observed that the cooling effect on the heat source is maximized when the gap between the ultrasonic vibrator and heat source coincides with the multiples of half-wavelength of the ultrasonic wave. This fact results from the resonance of the sound wave. The theoretical analysis of the dependence on the gap is also accomplished and verified by experiment. The advantage of the proposed cooling method by acoustic streaming is noise-free due to the ultrasonic vibration and maintenance-free because of the absence of moving parts. Moreover. This cooling method can be utilized to the nano and micro-electro mechanical systems, where the fan-based conventional cooling method can not be employed.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.51 no.12
• /
• pp.597-600
• /
• 2002

Film Bulk Acoustic wave Resonator (FBAR) using thin piezoelectric films can be made as monolithic integrated devices with compatibility to semiconductor process, leading to small size and low cost, high Q RF circuit elements with wide applications in communications area. This paper presents a MMIC compatible suspended FBAR using surface micromachining. Membrane is composed $Si_3N_4SiO_2Si _3N_4$ multi layer and air gap is about 50${\mu}{\textrm}{m}$. Firstly, We perform one dimensional simulation applying transmission line theorem to verify resonance characteristic of the FBAR. Process of the FBAR is used MEMS technology. Fabricated FBAR resonate at 2.4GHz, $K^2_{eff}$ and Q are 4.1% and 1100.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
• /
• 2014.10a
• /
• pp.79-83
• /
• 2014

In this paper, SAW devices are fabricated using various IDT shape(Single/Double) to check an effect of the IDT on SAW device. And based on theory of a particle velocity moved by SAW and IDT, a particle velocity is measured and calculated. Depend on insert power, a particle velocity using Single-IDT SAW device is about two times bigger than Double-IDT SAW device and it's almost same with a theoretical different.

• Journal of Electrical Engineering and Technology
• /
• v.1 no.4
• /
• pp.496-502
• /
• 2006

In this paper, we studied the development of the electronic ballast for 250W MH (Metal-Halide) lamps. We were able to improve the input power factor by using a PFC IC. To provide the lamp with the rated voltage required, we used the buck-type dc-dc converter. The stress of the switching devices in the inverter could be reduced by this method. To eliminate the acoustic resonance phenomena of MH lamps, the voltage of the lamp added the high frequency sine-wave to the low frequency square-wave by using the full bridge typed inverter. We have developed a simple igniter using the L and C elements. We could control the dimness of the lamp by varying the output voltage of the buck converter. The buck converter output voltage could be controlled by using a microprocessor.

• The Transactions of the Korean Institute of Electrical Engineers
• /
• v.41 no.6
• /
• pp.687-693
• /
• 1992

To improve dielectric, piezoelectric and temperature stability in 0.50Pb(SnS11/2TSbS11/2T)OS13T - 0.35PbTiOS13T - 0.60PbZrOS13T + 0.4[wt%]MnOS12T piezoelectric ceramics which is used for surface acoustic wave devices, CrS12TOS13T was added and the specimens were fabricated by Hot Press method, and their characteristics were measured with CrS12TOS13T addition. From the results, in the specimen added by 0.2[wt%]CrS12TOS13T, dielectric constant and mechanical quality factor were 380 and 2307, respectively, and it was suited for surface acoustic wave device and the temperature coefficient of the resonant frequency in the specimen added by 0.4[wt%]CrS12TOS13T was the least value of 74.96[ppm/$^{\circ}C$].

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.59 no.2
• /
• pp.390-396
• /
• 2010

An 80MHz surface acoustic wave (SAW)-based gyroscope utilizing a progressive wave was developed on a piezoelectric substrate. The developed sensor consists of two SAW oscillators in which one is used for sensing element and has metallic dots in the cavity between input and output IDTs. The other is used for a reference element. Coupling of mode (COM) modeling was conducted to determine the optimal device parameters prior to fabrication. According to the simulation results, the device was fabricated and then measured on a rate table. When the device was subjected to an angular rotation, oscillation frequency differences between the two oscillators were observed because of the Coriolis force acting on the metallic dots. Depending on the angular rate, the difference of the oscillation frequency was modulated. The obtained sensitivity was approximately 52.35 Hz/deg.s within the angular rate range of 0~1000 deg/s. The performances of devices with three IDT structures for two kinds of piezoelectric substrates were characterized. Good thermal stability was also observed during the evaluation process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.15 no.12
• /
• pp.1039-1044
• /
• 2002

Film Bulk Acoustic Resonator (FBAR) using thin piezoelectric films can be made as monolithic integrated devices with compatibility to semiconductor process, leading to small size, low cost and high Q RF circuit elements with wide applications in communications area. This paper presents an MMIC compatible suspended FBAR using SOI micromachining. It is possible to make a single crystal silicon membrane using a SOI wafer In fabricating active devices, SOI wafer offers advantage which removes the substrate loss. FBAR was made on the 12㎛ silicon membrane. Electrode and Piezoelectric materials were deposited by RF magnetron sputter. The maximum resonance frequency of FBAR was shown at 2.5GHz range. The reflection loss, K$^2$$\_$eff/, Q$\_$serise/ and Q$\_$parallel/ in that frequency were 1.5dB, 2.29%, 220 and 160, respectively.

• Journal of information and communication convergence engineering
• /
• v.2 no.3
• /
• pp.149-152
• /
• 2004

In this paper, we present the film bulk acoustic resonator (FBAR) devices fabricated by considering the effects of annealing temperature on zinc oxide (ZnO) film growth characteristics. In order to determine the annealing temperature and annealing time at which the ZnO film can have good material properties, the several resonators containing ZnO layers were fabricated and annealed at various temperatures from $27^{\circ}C\;to\;300^{\circ}C$ in Ar gas ambient. The effects of the annealing temperature and annealing time on the ZnO film properties were comprehensively studied in order to further improve the resonance characteristics of FBAR resonators.

• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.36 no.12
• /
• pp.1511-1519
• /
• 2012

Pipe structures contain many welded zones, and ultrasonic tests are increasingly being performed by using automated testing devices in order to evaluate the weld integrity. An electromagnetic acoustic transducer (EMAT) is a noncontact transducer that can transmit or receive ultrasonic waves without a couplant. Furthermore, it can easily generate specific guided waves such as SH (shear horizontal) or Lamb waves by altering the design of the coil and magnet. Therefore, an EMAT should be useful for application to an automated ultrasonic inspection system. In this study, SH waves generated using an EMAT were applied to inspect the pipe-weld zone. To analyze the specific SH mode (SH0) from the SH wave signals, wavelet transform was applied. It was found that flaws could be detected precisely because the intensity of the $SH_0$ mode-frequency, which is analyzed by using wavelet transform, is proportional to the length of the flaw.

• Coupled systems mechanics
• /
• v.12 no.4
• /
• pp.337-364
• /
• 2023

The Rayleigh wave propagation is considered in the structure of the functionally graded piezoelectric material (FGPM) layer over the elastic substrate. The elastic substrate loosely bonds the layer through a corrugated interface, whereas its upper boundary is also corrugated but stress-free. Additionally, the solutions for the FGPM layer and substrate are derived using the fundamental variable separable approach to convert the partial differential equation to an ordinary differential equation. The results with boundary conditions lead to dispersion relations for the electrically open and electrically short cases in the determinant form. The outcomes have been numerically analyzed using a specific model. The findings were presented in the form of graphs, which were created using Mathematica 7. Graphs are plotted for variations in wavenumber and phase velocity. The outcomes may help measure interface defects and design Surface Acoustic Wave (SAW) devices.