• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.41-42
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• 2005

The characteristics of ZnO films are reported depending on different deposition conditions for film bulk acoustic resonators (FBARs). The ZnO films have been deposited on Al films evaporated on p-type (100) silicon substrate by pulsed laser deposition (PLD) technique using a Nd:YAG laser. These films exhibit an electrical resistivity higher than $10^7$ $\Omega$m. X-ray diffraction measurements have shown that ZnO films are highly c-axis oriented with full width at half maximum (FWHM) below $0.5^{\circ}$. These results show the possibility of FBAR devices using by PLD.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.21 no.6
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• pp.942-950
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• 1997

Far field acoustic pressure from the evolution and interaction of three-dimensional vortex filament is calculated numerically. A vortex ring is a typical example of the three-dimensional vortex filament. An elliptic vortex ring emits a strong sound signal due to significant distortion and stretching of the vortec filament. The far field acoustic pressure is linearly dependent on the third time derivatives of the vortex positions. A numerical scheme of high resolution is employed to describe in detail the elliptic vortex ring motions which ar highly nonlinear. Descretized vortex filaments are interpolated by using a parametric blending function to remove a possible numerical instability. The distorted vortex filament, owing to the self-induced and the induced velocity from the other vortex segments, is redistributed at each time step. The accuracy and efficiency of the scheme are validated by comparisons with the analytic solution of circular vortex ring interaction.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.703-706
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• 2002

Piezoelectric thin film such as ZnO and AlN can be applicable to FBAR (Film Bulk Acoustic Resonator) device of thin film type and FBAR can be applicable to MMIC. The characteristic of FBAR device is variable according to the deposition conditions of piezoelectric thin film when preparation of thin film by sputtering method. In this study, we prepared ZnO thin film for FBAR using Facing Targets Sputtering apparatus which can be deposited fine Quality thin film because temperature increase of substrate due to the bombardment of high-energy particles can be restrained. And crystalline and c-axis preferred orientation of ZnO thin film with deposition conditions was investigated by XRD.

• Proceedings of the KSPS conference
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• 1996.10a
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• pp.206-206
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• 1996

Previous studies of American English(e.g. Sussman 1991, 1993, 1994) CVC coarticulation with initial consonants representing the labial, alveolar, and velar showed a linear relationship that fits to data points formed by plotting onsets of F2 transition along the y-axis and their corresponding midvowel points along the x-axis. The present study extends the locus equation metric to include the following places of articulation:uvular, pharyngeal, laryngeal, and emphatics. The question of interest is to determine if locus equation could serve as phonetic descriptor for the place of articulation in Arabic. Five male native speakers of Colloquial Egyptian Arabic(CEA) read a list of 204 CVC and CVCC words, containing eight different places of articulation and eight vowels. Average of formant patterns(Fl,F2,F3) onsets, midpoints, and offsets were calculated, using wide band spectrograms obtained by means of the kay spectrograph model(7029), and plotted as locus equations. A summary of the acoustic properties of the place of articulation of CEA will be presented in the frames of bVC and CVb. Strong linear regression relationships were found for every place of articulation.

• Journal of the Korean Ceramic Society
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• v.43 no.9 s.292
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• pp.527-531
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• 2006

In order to study the influence of post-annealing treatment on the frequency characteristics of the Li doped ZnO(Li:ZnO) FBAR(Film Bulk Acoustic Resonator) device, we investigated the material and electrical properties of Li:ZnO films in the annealing temperature range from 300 to $500^{\circ}C$. In our samples, as annealing temperature was increased, Li:ZnO films showed the improvement of high c-axis orientation and resistance value with relieved stress and low surface roughness. In addition to, the return loss in the frequency property of fabricated FBAR was improved by annealing treatment from 24.9 to 29.8dB. From experimental results, the optimum post-annealing temperature for FBAR is $500^{\circ}C$ and it can obtain excellent Li:ZnO FBAR performance with stronger c-axis orientation, smoother surface, relieved stress, and lower loss factor.

• Korean Journal of Materials Research
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• v.25 no.3
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• pp.138-143
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• 2015

Aluminum nitride, a compound semiconductor, has a Wurtzite structure; good material properties such as high thermal conductivity, great electric conductivity, high dielectric breakdown strength, a wide energy band gap (6.2eV), a fast elastic wave speed; and excellent in thermal and chemical stability. Furthermore, the thermal expansion coefficient of the aluminum nitride is similar to those of Si and GaAs. Due to these characteristics, aluminum nitride can be applied to electric packaging components, dielectric materials, SAW (surface acoustic wave) devices, and photoelectric devices. In this study, we surveyed the crystallization and preferred orientation of AlN thin films with an X-ray diffractometer. To fabricate the AlN thin film, we used the magnetron sputtering method with $N_2$, NH3 and Ar. According to an increase in the partial pressures of $N_2$ and $NH_3$, Al was nitrified and deposited onto a substrate in a molecular form. When AlN was fabricated with $N_2$, it showed a c-axis orientation and tended toward a high orientation with an increase in the temperature. On the other hand, when AlN was fabricated with $NH_3$, it showed a-axis orientation. This result is coincident with the proposed mechanism. We fabricated AlN thin films with an a-axis orientation by controlling the sputtering electric power, $NH_3$ pressure, deposition speed, and substrate temperature. According to the proposed mechanism, we also fabricated AlN thin films which demonstrated high a-axis and c-axis orientations.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.2
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• pp.255-262
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• 2003

In this paper, an investigation on the ZnO film deposition using radio-frequency magnetic sputtering techniques on aluminum bottom electrode for film bulk acoustic wave resonator (FBAR) filter applications and the temperature effects on the ZnO film growth is presented. The investigation on how much impact the actual process temperature may have on the crystal growth is more meaningful if it is considered that the piezoelectricity property of ZnO films plays a dominant role in determining the resonance characteristics of FBAR devices and the piezoelectricity is determined by the degree of the c-axis preferred orientation of the deposited ZnO films. In this experiment, it was found that the growth of ZnO crystals has a strong dependence on the deposition temperature ranged from room temperature to $350^{\circ}C$ regardless of the RF powers applied and there exist 3 temperature regions divided by 2 critical temperatures according to the degree of the c-axis preferred orientation. Overall, below $200^{\circ}C$, ZnO deposition results in columnar grains with a highly preferred c-axis orientation. With this ZnO film, a multilayered FBAR structure could be realized successfully.

• The Journal of Engineering Geology
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• v.6 no.2
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• pp.53-58
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• 1996

In order to investigate the source mechanism of micro cracks through acoustic emission measurement induced by rock fracture, careful calibration of the entire linkage of the detecting system, from the transducers to transient recorder, is an essential requirement prior to testing. Transducers and digitiging system are generally the weakest links in the measurement system because they must translate mechanical motions into digital electric signals. In this study, PAC piezoelectric pressure transducers are calibrated with a standard NBS conical shaped displacement transducer and a DG piezoelectric displacement transducer. The NBS and PAC transducers are insensitive to changes in horizontal impingement angle but sensitive to changes in incident angle. The ray path along the logitudinal axis of the tranducer produced a maximum response while the ray path perpendicular to the transducer axis gave a minimum. And a difference in individual transducers factor for a peak-to-peak amplitude of PAC transducers was within 40%. An average PAC transducer coefficient was determined as 77mv/pm by an absolute calibration test using NBS transducer.

• Journal of the Korean Vacuum Society
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• v.15 no.6
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• pp.619-623
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• 2006

The most important factor which determines resonance characteristics of FBAR(Film Bulk Acoustic Resonator) is the piezoelectricity of piezoelectric film. The piezoelectric properties of ZnO thin films which is strong as FBAR piezoelectric film is determined by the degree of c-axis preferred orientation with (002) plan. Therefore, many researchers have been interested in the study on the preferred orientation of the piezoelectric thin film. This paper has studied the preferred orientation of ZnO piezoelectric thin films using the helped seed layer of ZnO. The result shows that the c-axis ZnO thin films with columnar grains that the value of standard $deviation(\sigma)$ of XRD rocking curve is of $\sigma=1.15^{\circ}$ have the excellent piezoelectric property.

• IEMEK Journal of Embedded Systems and Applications
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• v.10 no.4
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• pp.189-198
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• 2015

Most IoT-related approaches have tried to establish the relation by connecting the network between things. The proposed research will present how the pervasive interaction of eco-system formed by touching the objects between humans and things can be recognized on purpose. By collecting and sharing the detected patterns among all kinds of things, we can construct the environment which enables individualized interactions of different objects. To perform the aforementioned, we are going to utilize technical procedures such as event-driven signal processing, pattern matching for signal recognition, and hardware in the loop simulation. We will also aim to implement the prototype of sensor processor based on Arduino MCU, which can be integrated with system using Arduino-Matlab/Simulink hybrid-interoperation environment. In the experiment, we use piezo transducer to detect the vibration or vibrates the surface using acoustic wave, which has specific frequency spectrum and individualized signal shape in terms of time axis. The signal distortion in time and frequency domain is recorded into memory tracer within sensor processor to extract the meaningful pattern by comparing the stored with lookup table(LUT). In this paper, we will contribute the initial prototypes for the acoustic touch processor by using off-the-shelf MCU and the integrated framework based on Matlab/Simulink model to provide the individualization of the touch-sensing for the user on purpose.