• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.41-42
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• 2005

The characteristics of ZnO films are reported depending on different deposition conditions for film bulk acoustic resonators (FBARs). The ZnO films have been deposited on Al films evaporated on p-type (100) silicon substrate by pulsed laser deposition (PLD) technique using a Nd:YAG laser. These films exhibit an electrical resistivity higher than $10^7$ $\Omega$m. X-ray diffraction measurements have shown that ZnO films are highly c-axis oriented with full width at half maximum (FWHM) below $0.5^{\circ}$. These results show the possibility of FBAR devices using by PLD.

• 대한기계학회논문집A
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• 제21권6호
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• pp.942-950
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• 1997

Far field acoustic pressure from the evolution and interaction of three-dimensional vortex filament is calculated numerically. A vortex ring is a typical example of the three-dimensional vortex filament. An elliptic vortex ring emits a strong sound signal due to significant distortion and stretching of the vortec filament. The far field acoustic pressure is linearly dependent on the third time derivatives of the vortex positions. A numerical scheme of high resolution is employed to describe in detail the elliptic vortex ring motions which ar highly nonlinear. Descretized vortex filaments are interpolated by using a parametric blending function to remove a possible numerical instability. The distorted vortex filament, owing to the self-induced and the induced velocity from the other vortex segments, is redistributed at each time step. The accuracy and efficiency of the scheme are validated by comparisons with the analytic solution of circular vortex ring interaction.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.703-706
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• 2002

Piezoelectric thin film such as ZnO and AlN can be applicable to FBAR (Film Bulk Acoustic Resonator) device of thin film type and FBAR can be applicable to MMIC. The characteristic of FBAR device is variable according to the deposition conditions of piezoelectric thin film when preparation of thin film by sputtering method. In this study, we prepared ZnO thin film for FBAR using Facing Targets Sputtering apparatus which can be deposited fine Quality thin film because temperature increase of substrate due to the bombardment of high-energy particles can be restrained. And crystalline and c-axis preferred orientation of ZnO thin film with deposition conditions was investigated by XRD.

• 대한음성학회:학술대회논문집
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• 대한음성학회 1996년도 10월 학술대회지
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• pp.206-206
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• 1996

Previous studies of American English(e.g. Sussman 1991, 1993, 1994) CVC coarticulation with initial consonants representing the labial, alveolar, and velar showed a linear relationship that fits to data points formed by plotting onsets of F2 transition along the y-axis and their corresponding midvowel points along the x-axis. The present study extends the locus equation metric to include the following places of articulation:uvular, pharyngeal, laryngeal, and emphatics. The question of interest is to determine if locus equation could serve as phonetic descriptor for the place of articulation in Arabic. Five male native speakers of Colloquial Egyptian Arabic(CEA) read a list of 204 CVC and CVCC words, containing eight different places of articulation and eight vowels. Average of formant patterns(Fl,F2,F3) onsets, midpoints, and offsets were calculated, using wide band spectrograms obtained by means of the kay spectrograph model(7029), and plotted as locus equations. A summary of the acoustic properties of the place of articulation of CEA will be presented in the frames of bVC and CVb. Strong linear regression relationships were found for every place of articulation.

• 한국세라믹학회지
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• 제43권9호
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• pp.527-531
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• 2006

In order to study the influence of post-annealing treatment on the frequency characteristics of the Li doped ZnO(Li:ZnO) FBAR(Film Bulk Acoustic Resonator) device, we investigated the material and electrical properties of Li:ZnO films in the annealing temperature range from 300 to $500^{\circ}C$. In our samples, as annealing temperature was increased, Li:ZnO films showed the improvement of high c-axis orientation and resistance value with relieved stress and low surface roughness. In addition to, the return loss in the frequency property of fabricated FBAR was improved by annealing treatment from 24.9 to 29.8dB. From experimental results, the optimum post-annealing temperature for FBAR is $500^{\circ}C$ and it can obtain excellent Li:ZnO FBAR performance with stronger c-axis orientation, smoother surface, relieved stress, and lower loss factor.

• 한국재료학회지
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• 제25권3호
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• pp.138-143
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• 2015

Aluminum nitride, a compound semiconductor, has a Wurtzite structure; good material properties such as high thermal conductivity, great electric conductivity, high dielectric breakdown strength, a wide energy band gap (6.2eV), a fast elastic wave speed; and excellent in thermal and chemical stability. Furthermore, the thermal expansion coefficient of the aluminum nitride is similar to those of Si and GaAs. Due to these characteristics, aluminum nitride can be applied to electric packaging components, dielectric materials, SAW (surface acoustic wave) devices, and photoelectric devices. In this study, we surveyed the crystallization and preferred orientation of AlN thin films with an X-ray diffractometer. To fabricate the AlN thin film, we used the magnetron sputtering method with $N_2$, NH3 and Ar. According to an increase in the partial pressures of $N_2$ and $NH_3$, Al was nitrified and deposited onto a substrate in a molecular form. When AlN was fabricated with $N_2$, it showed a c-axis orientation and tended toward a high orientation with an increase in the temperature. On the other hand, when AlN was fabricated with $NH_3$, it showed a-axis orientation. This result is coincident with the proposed mechanism. We fabricated AlN thin films with an a-axis orientation by controlling the sputtering electric power, $NH_3$ pressure, deposition speed, and substrate temperature. According to the proposed mechanism, we also fabricated AlN thin films which demonstrated high a-axis and c-axis orientations.

• 한국정보통신학회논문지
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• 제7권2호
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• pp.255-262
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• 2003

본 논문에서는 FBAR(film bulk acoustic wave resonator) 필터 응용을 위해 Al 하부전극 상에서 RF magnetron sputtering 기술을 이용한 ZnO 박막 증착 및 공정온도가 ZnO 결정성장에 미치는 영향에 대한 연구결과를 발표한다 ZnO 박막의 압전특성은 FBAR 소자의 공진특성을 결정하는 가장 중요한 요소이고 압전성은 증착된 ZnO박막의 c축 우선배향성의 정도에 의해 결정된다는 사실을 고려한다면 ZnO 결정성장에 미치는 공정온도에 관한 연구는 매우 의미 있는 일이다. 본 실험을 통하여 ZnO 박막의 성장특성은 상온에서부터 35$0^{\circ}C$까지의 실험조건에서 c축 우선배향성의 정도에 따라 RF power에 관계없이 온도를 2개의 임계온도에 의해 나눠진 3개의 온도구간으로 구분할 수 있었다. 결과적으로 20$0^{\circ}C$ 이하의 공정온도에서는 주상형 결정립을 가진 c축 우선배향의 ZnO 박막을 얻을 수 있었다. 이렇게 얻은 ZnO박막을 사용하여 FBAR 다층박막 구조를 구현하였다.

• 지질공학
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• 제6권2호
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• pp.53-58
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• 1996

암석 시료의 파괴시에 발생하는 AE신호를 측정하여 파괴와 관련된 미세균열의 발생원에 대한 연구를 위하여서는 탐촉자에서 기록장치까지 전과정에 대한 검증이 필요하다. 특히 탐촉자는 기계적인 진동을 전기신호로 전환하는 기능을 가진 예민한 장치로서 다양한 인자에 의하여 예민도가 달라질 수 있기 때문에 보정시험을 실리하여야 한다. 압전 압력형 PAC 탐촉자를 NBS나 DG의 변위형 탐촉자에 의하여 보정하는 시험을 실시하였다. NBS 및 PAC탐촉자는 파의 입사방위각에는 무관하나 입사각에는 예민하게 반응한다. 즉, 입사각이 $90^{\circ}$ 일 때에는 입사각 $15^{\circ}$ 이하 일 때보다 약 10배의 큰 출력을 나타내었다. 또한, 시험에 사용된 PAC 탐촉자가의 경우 강도에 대한 개별 예민도의 차이가 최대 약 40%이었다. 압력형 PAC 탐촉자는 변위형 표준탐촉자로 절대치 보정시험을 실시한 결과 보정계수는 평균 77mv/pm이었다.

• 한국진공학회지
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• 제15권6호
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• pp.619-623
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• 2006

FBAR(Film Bulk Acoustic Resonator) 소자의 공진특성을 결정하는 가장 중요한 요소는 압전막의 압전성을 들 수 있다. FBAR 압전막으로 유력한 ZnO 압전박막은 (002)면 c-축 우선배향성(preferred orientation)의 정도에 따라서 압전성이 결정된다. 그러므로 ZnO 박막의 우선배향성에 관한 연구는 많은 연구자들의 관심사가 되어왔다. 본 논문에서는 ZnO 보조씨드충(helped seed layer)을 이용하여 ZnO 압전박막의 우선배향성에 대하여 조사하였으며, rocking curve의 표준편차$(\sigma)$ 값이 $1.15^{\circ}$인 주상형 결정립을 가진 c-축 ZnO 압전박막이 우수한 압전특성을 나타내는 것을 확인하였다.

• 대한임베디드공학회논문지
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• 제10권4호
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• pp.189-198
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• 2015

Most IoT-related approaches have tried to establish the relation by connecting the network between things. The proposed research will present how the pervasive interaction of eco-system formed by touching the objects between humans and things can be recognized on purpose. By collecting and sharing the detected patterns among all kinds of things, we can construct the environment which enables individualized interactions of different objects. To perform the aforementioned, we are going to utilize technical procedures such as event-driven signal processing, pattern matching for signal recognition, and hardware in the loop simulation. We will also aim to implement the prototype of sensor processor based on Arduino MCU, which can be integrated with system using Arduino-Matlab/Simulink hybrid-interoperation environment. In the experiment, we use piezo transducer to detect the vibration or vibrates the surface using acoustic wave, which has specific frequency spectrum and individualized signal shape in terms of time axis. The signal distortion in time and frequency domain is recorded into memory tracer within sensor processor to extract the meaningful pattern by comparing the stored with lookup table(LUT). In this paper, we will contribute the initial prototypes for the acoustic touch processor by using off-the-shelf MCU and the integrated framework based on Matlab/Simulink model to provide the individualization of the touch-sensing for the user on purpose.