• The Journal of Korean Academy of Prosthodontics
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• v.23 no.1
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• pp.83-95
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• 1985

The purpose of this study was to evaluate microstructures on the etched surface of 11 base metal alloys for dental restorations and to observe the relationship between the etching pattern and beryllium. For this purpose, the following experiments were done; 11 base metal alloys were etched in (1) 10% $H_2SO_4$, (2) 10% $H_2SO_4$, 9 parts+methanol 1 part (3) Conc. $HNO_3$ 25%+glacial acetic acid 25%+$H_2O$ 50% (4) Conc. $HNO_3$ 5% (5) 2% glacial acetic acid added to Conc. $HNO_3$ 1% solution, with their etching conditions varied. Etched surface of alloys were examined under the scanning electron microscope. Results were as follows; 1. Almost all of Ni-Cr-Be alloys showed gooed etchd surface in $H_2SO_4$, solution, while some of those alloys which contains no beryllium showed good etched surface in $HNO_3$ solution. 2. Main components of etching solution can vary etching pattern of alloys. 3. Gamma prime phase relief, which can be found in all Ni-Cr-Be alloys, can't be found in any alloy that contains no beryllium.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.8
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• pp.455-460
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• 2016

A textured front surface is required in high efficiency silicon solar cells to reduce reflectance and to improve light trapping. Wet etching with alkaline solution is usually applied for mono crystalline silicon solar cells. However, alkali texturing method is not appropriate for multi-crystalline silicon wafers due to grain boundary of random crystallographic orientation. Accordingly, acid texturing method is generally used for multi-crystalline silicon wafers to reduce the surface reflectance. To reduce reflectivity of multi-crystalline silicon wafers, double texturing method with combination of acid and reactive ion etching is an attractive technical solution. In this paper, we have studied to optimize RIE condition by different RF power condition (100, 150, 200, 250, 300 W).

• Journal of the Korean institute of surface engineering
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• v.26 no.3
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• pp.149-157
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• 1993

In the study of TAB(Tape Automated Bonding)technologies, Cu-Cr sputtered seed layer has been used to improve the adhesion between Polyimide and Cu film and electrical properties. But the Cu electrodeposit on Cu-Cr film had poor adhesion or powder-like form due to the surface Cr oxides on the Cu-Cr film. By means of activating the Cu-Cr film with the oxalic acid and phosphoric acid, the Cu film with the improved adhesion could be coated on the Cu-Cr sputtered film in CuSO4 solution. The etching rate was compared with increasing the Cr content of the sputtered Cu-Cr film, and anodic polarization curve in FeCl3 solution was investigated. With increasing the Cr content, the etching rate was reduced. The clean etching cross section could be obtained with increasing the concentration of FeCl3 solution. But above the 13 w/o Cr content, Cu-Cr sputtered film could not bed etched cleanly only with FeCl3 solution and additives were needed.

• Journal of the korean academy of Pediatric Dentistry
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• v.30 no.1
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• pp.143-152
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• 2003

The aims of the present study was to observe resin tag of the resin/enamel, dentin interface produced by self-etching adhesive systems and evaluate effect of additional acid etching on resin tag formation. Three self-etching primer(SE bond, AQ bond and L Pop) and an one bottle adhesive(Single bond) were used. Flat occlusal enamel and dentin disks were obtained from extracted human molars. A total of 20 surfaces were collected and divided into four groups of 5 samples. One-half of each specimen in each group was etched with 35% phosphoric acid prior to the application of each adhesive system, with the second half being kept unetched. Subsequently, resin composite was placed and polymerized. The samples were sliced and immersed into HCl and NaOCl solutions, followed by drying and sputter coating for examination with a SEM. The results were as follows; 1. Additional etching side of dentin displayed longer and thicker resin tag than unetched side in all self-etching adhesive groups. 2. In enamel, additional etching side displayed deeper and more distinct etching pattern than unetched side except L Pop. There is no difference between etched and unetched enamel in L Pop. The results obtained suggest the self-etching adhesive did not etch enamel and penetrate into dentinal tubule as deeply as did additional etching. Further research should include the evaluation of the relationship of boding strength, microleakage and resin tag morphology.

• Restorative Dentistry and Endodontics
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• v.32 no.4
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• pp.365-376
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• 2007

The purpose of this study was to evaluate the effect of different etching times on microtensile bond strength (${\mu}TBS$) to dentin both initial and after thermocycling with 3 different types of total-etching adhesives. Fifty four teeth were divided into 18 groups by etching times (5, 15, 25 sec), adhesives types (Scotchbond Multipurpose (SM), Single Bond (SB), One-Step (OS)) and number of thermocycling (0, 2,000 cycles). Flat dentin surfaces were prepared on mid-coronal dentin of extracted third molars. After exposed fresh dentin surfaces were polished with 600-grit SiC papers, each specimen was acid-etched with 35% phosphoric acid (5, 15, 25 sec) and bonded with 3 different types of total etching adhesives respectively. Then, hybrid composite Z-250 was built up. Half of them were not thermocycled (control group) and the ethers were subjected to 2,000 thermocycle (experimental group). They were sectioned occluso-gingivally into $1.0\;{\times}\;1.0\;mm^2$ composite-dentin beams and tested with universal testing machine at a crosshead speed of 1.0 mm/min. Within limited data of this study, the results were as follows 1. There was no statistically significant difference in ${\mu}TBS$ between the thermocycled and non-thermocycled groups, except for both SM and SB etched for 25 sec. 2. In thermocycled SM and SB groups, bond strength decreased by extended etching time. In total etching systems, adhesive durability for dentin could be affected by type of solvents in adhesive and etching time. Especially, extended etching time may cause deteriorate effects on bond strength when ethanol-based adhesive was used.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.220-220
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• 2013

Surface-normal transmission electro-absorption modulator (EAM) are attractive for high-definition (HD) three-dimensional (3D) imaging application due to its features such as small system volume and simple epitaxial structure [1,2]. However, EAM in order to be used for HD 3D imaging system requires uniform modulation performance over large area. To achieve highly uniform modulation performance of EAM at the operating wavelength of 850 nm, it is extremely important to remove the GaAs substrate over large area since GaAs material has high absorption coefficient below 870 nm which corresponds to band-edge energy of GaAs (1.424 eV). In this study, we propose and experimentally demonstrate a transmission EAM in which highly selective backside etching methods which include lapping, dry etching and wet etching is carried out to remove the GaAs substrate for achieving highly uniform modulation performance. First, lapping process on GaAs substrate was carried out for different lapping speeds (5 rpm, 7 rpm, 10 rpm) and the thickness was measured over different areas of surface. For a lapping speed of 5 rpm, a highly uniform surface over a large area ($2{\times}1\;mm^2$) was obtained. Second, optimization of inductive coupled plasma-reactive ion etching (ICP-RIE) was carried out to achieve anisotropy and high etch rate. The dry etching carried out using a gas mixture of SiCl4 and Ar, each having a flow rate of 10 sccm and 40 sccm, respectively with an RF power of 50 W, ICP power of 400 W and chamber pressure of 2 mTorr was the optimum etching condition. Last, the rest of GaAs substrate was successfully removed by highly selective backside wet etching with pH adjusted solution of citric acid and hydrogen peroxide. Citric acid/hydrogen peroxide etching solution having a volume ratio of 5:1 was the best etching condition which provides not only high selectivity of 235:1 between GaAs and AlAs but also good etching profile [3]. The fabricated transmission EAM array have an amplitude modulation of more than 50% at the bias voltage of -9 V and maintains high uniformity of >90% over large area ($2{\times}1\;mm^2$). These results show that the fabricated transmission EAM with substrate removed is an excellent candidate to be used as an optical shutter for HD 3D imaging application.

• The Journal of Korean Academy of Prosthodontics
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• v.38 no.2
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• pp.255-263
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• 2000

The purpose of this study was to compare the microleakage of the composite resin cores according to surface treatment, dentin bonding agents, and thermocycling. For this study, 120 extracted premolar teeth were used. Flat occlusal surfaces were prepared with diamond disk, and treated with air-abrasion, acid-etching, combination. The composite resin core was built with Z-100 after application of Scotchbond Multi-Purpose and All-Bond 2. Prepared specimens were thermocycled for 2,000 cycles. Specimens were immersed in 1% methylene blue solution for 24hours at $37^{\circ}C$. The microleakage was measured with a inverted metallurgical microscope(BHS313, Olympus, Japan). The following conclusions were drawn from this study: 1. The microleakages in the groups treated with air-abrasion and with acid etching were greater than that of the groups treated with combination method before thermocycling(p<0.05), the microleakages of the groups treated with air-abrasion were greater than that of the groups treated with acid-etching and combination method after thermocycling(p<0.05) 2. There were no significant difference between groups using Scotchbond Multi-Purpose and the groups using All-Bond 2. 3. Thermocycling didn't affect the change of microleakage in all cases.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.243-243
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• 2010

This paper two different etching, HF : HNO3 :DI and RIE were used for etching in multi-crystalline Silicon(Mc-Si) solar cell fabrication. The wafers etched in RIE texture showed low reflectance compared to the wafers etched in Acid soultion after SiNx deposition. In light current-voltage results, the cells etched in RIE texture exhibited higher short circuit current and open circuit voltage than those of the cells etched in acid solution. We have obtained 15.1% conversion efficiency in large area($156cm^2$) Multi-Si solar cells etched in RIE texture.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.401-401
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• 2011

In this work, we deposited Al2O3doped ZnO (AZO) thin films by direct current (DC) magnetron sputtering method with a $40^{\circ}$ tilted target, for application in the front layer of thin film solar cell. Wet chemical etching behavior of AZO films was also investigated. In order to optimize textured AZO films, oxalic acid ($C_2H_2O_4$)has been used as wet etchant of AZO film. In this experiment we used 0.001% concentration of oxalic acid various etching time, that showed an anisotropy in etching texture of AZO films. Electrical resistivity, Hall mobility and carrier concentration measurements are performed by using the Hall measurement, that are $6{\times}10^{-4}{\Omega}cm$, $20{\sim}25cm^2/V-s$ and $4{\sim}6{\times}10^{20}$, respectively.

• Applied Chemistry for Engineering
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• v.27 no.1
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• pp.101-109
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• 2016

The purpose of this research was to develop a flat panel display device's glass etchant which can replace hydrofluoric acid. The glass etchant was composed of 18~19% wt% of ammonium hydrogen fluoride, 24~25 wt% of sulfuric acid, 45~46 wt% of water, 4~5 wt% of sulfate and 7~8 wt% of fluoro-silicate. By replenishing the etchant which has the amount of 5% of initial solution's mass, it was possible to reuse the etchant continuously. The developed etchant showed $5{\mu}m/min$ of etching rate at $30^{\circ}C$. The reusable etchant, with replenishing 5% of initial etchant mass showed the stable etching rate, which has the deviation of less than $0.1{\mu}m/min$ etching rate. The glass surface of flat panel display device created from our etching process was in good condition with any defects such as pin hole and dimple.