Pretreatment for Cu electroplating and Etching Property of Cu-Cr Film

Cu-Cr합금 박막의 구리 전기도금을 위한 전처리 및 에칭 특성에 관한 연구

  • Kim, N. S. (Seoul National University, Dept. of Metall. Eng.) ;
  • Kang, T. (Seoul National University, Dept. of Metall. Eng.) ;
  • Yun, I. P. (Yonsei University, Dept. of Metall. Eng.) ;
  • Park, Y. S. (Yonsei University, Dept. of Metall. Eng.)
  • 김남석 (서울대학교 금속공학과) ;
  • 강탁 (서울대학교 금속공학과) ;
  • 윤일표 (연세대학교 금속공학과) ;
  • 박용수 (연세대학교 금속공학과)
  • Published : 1993.06.01

Abstract

In the study of TAB(Tape Automated Bonding)technologies, Cu-Cr sputtered seed layer has been used to improve the adhesion between Polyimide and Cu film and electrical properties. But the Cu electrodeposit on Cu-Cr film had poor adhesion or powder-like form due to the surface Cr oxides on the Cu-Cr film. By means of activating the Cu-Cr film with the oxalic acid and phosphoric acid, the Cu film with the improved adhesion could be coated on the Cu-Cr sputtered film in CuSO4 solution. The etching rate was compared with increasing the Cr content of the sputtered Cu-Cr film, and anodic polarization curve in FeCl3 solution was investigated. With increasing the Cr content, the etching rate was reduced. The clean etching cross section could be obtained with increasing the concentration of FeCl3 solution. But above the 13 w/o Cr content, Cu-Cr sputtered film could not bed etched cleanly only with FeCl3 solution and additives were needed.

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