• 제목/요약/키워드: accumulated charge

검색결과 123건 처리시간 0.023초

수명시간에 따른 NPT-IGBT의 N-drift 영역에서의 과잉소수 캐리어와 전하량 분석 (Analysis of excess minority carrier and charge wish lifetimes in N-dirft region of NPT-IGBT)

  • 류세환;이용국;안형근;한득영
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 하계학술대회 논문집
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    • pp.844-847
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    • 2001
  • In this work, transient characteristics of the Non-Punch Through(NPT) Insulated Gate Bipolar Transistor(IGBT) has been studied. we has analyzed with lifetimes excess minority carrier injected into N-dirft, base region of IGBT's BJT part and accumulated charge of on-state which affected swiching characteristic. In this paper, excess minority carrier and charge distribution in active base region is expressed analytically. This analysis proposed optical trade-off between lifetimes and accumulated charge for decreasing switching losses because charge result in switching loss when device was tuned off.

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누적감가상각비율함수를 이용한 감가상각방법에 대한 고찰 (Consideration to the Depreciation Method using Accumulated Depreciation Rate Function)

  • 손진현
    • 한국콘텐츠학회논문지
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    • 제9권1호
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    • pp.304-311
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    • 2009
  • 본 연구에서는 시간의 경과에 기반을 둔 누적감가상각비율함수를 이용한 새로운 감가상각방법을 제안한다. 제안된 방법은 임의의 시점에서의 누적감가상각금액을 계산해내는 방법으로, 현재 사용되고 있는 방법들이 가지고 있는 문제점들을 해결할 수 있을 뿐만 아니라, 시간의 경과에 따라 매 회기의 감각상액이 일정하거나, 점차 감소하거나, 점차 증가하는 모든 경우를 체계적으로 계산해낼 수 있다. 이 방법을 사용하면 각 자산의 특성에 맞는 다양한 감각상각형태를 합리적으로 선택하여 사용할 수 있고, 기중에 자산을 취득하거나 처분하는 경우에도 체계적이고 일관성 있게 감가상각비를 상계할 수 있게 된다.

저밀도 폴리에틸렌의 전하축적 특성 (Charge Accunmulation Characteristics in LDPE)

  • 서광석;김은주;;이승형;공종수
    • 대한전기학회논문지
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    • 제41권1호
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    • pp.42-49
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    • 1992
  • Charge accumulation characteristics in low density polyethylene (LDPE) has been discussed based upon the internal charge distrubution measured by the pulsed electroacoustic technique. When the negative voltage with respect to earth is applied to the upper electrode, the negative charges near the anode and the positive charges near the cathode are accumulated in LDPE. Also, there was an asymmetric behavior of charge accumulation exhibiting that the charge accumulation near the anode keeps increasing whereas that near the cathode increases first and then decreases. Besides, under the present test conditions the internal charge distrubution becomes stabilized eventually. When the positive voltage with respect to earth is applied to the upper electrode, on the other hand, no such asymmetric charge accumulation was found. Therefore, it can be concluded that the heterocharges are accumulated at the surface region of LDPE subjected to high do voltages and that the begavior of charge accumulation depends on the polarity of do voltage and the position of charge accumulation.

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교류전압에서 PD 패턴 및 유전체 장벽 방전에 미치는 공간전하의 영향 (The Effect of Space Charge on the PD Pattern and Dielectric Barrier Discharge under AC)

  • 권윤혁;황보승;이동영;한민구
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제49권4호
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    • pp.226-231
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    • 2000
  • In this paper, we present new method to analyze the space charge effect on the electrical characteristics in polymer. It is new measurement system and analysis method that have not reported yet. By using this measurement system, we make observation to space charge accumulated on the surface of polymer at AC voltage, so it is examined to verify the correlation of space charge and partial discharge(PD). In the result of experiment, it can be known that PD pattern is related more closely to space charge accumulated on the surface of polymer than in the inner part, and applied voltage in the air is ruled by this dynamic partial discharge. Also, above critical voltage, the space charge accumulated on the surface of polymer have no effect to the magnitude of PD and the applied voltage in the air. It has been known that the electric power of the dissolution system is proportioned to the frequency and the magnitude of applied voltage, but we can know by this result of the experiment that the efficiency of the dissolution is not related to the rise of voltage above critical voltage.

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Statistical Characterization Fabricated Charge-up Damage Sensor

  • Samukawa Seiji;Hong, Sang-Jeen
    • Transactions on Electrical and Electronic Materials
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    • 제6권3호
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    • pp.87-90
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    • 2005
  • $SiO_2$ via-hole etching with a high aspect ratio is a key process in fabricating ULSI devices; however, accumulated charge during plasma etching can cause etching stop, micro-loading effects, and charge build-up damage. To alleviate this concern, charge-up damage sensor was fabricated for the ultimate goal of real-time monitoring of accumulated charge. As an effort to reach the ultimate goal, fabricated sensor was used for electrical potential measurements of via holes between two poly-Si electrodes and roughly characterized under various plasma conditions using statistical design of experiment (DOE). The successful identification of potential difference under various plasma conditions not only supports the evidence of potential charge-up damage, but also leads the direction of future study.

Sensitivity Analysis of Plasma Charge-up Monitoring Sensor

  • Lee Sung Joon;Soh Dea-Wha;Hong Sang Jeen
    • Journal of information and communication convergence engineering
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    • 제3권4호
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    • pp.187-190
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    • 2005
  • High aspect ratio via-hole etching process has emerged as one of the most crucial means to increase component density for ULSI devices. Because of charge accumulation in via-hole, this sophisticated and important process still hold several problems, such as etching stop and loading effects during fabrication of integrated circuits. Indeed, the concern actually depends on accumulated charge. For monitoring accumulated charge during plasma etching process, charge-up monitoring sensor was fabricated and tested under some plasma conditions. This paper presents a neural network-based technique for analyzing and modeling several electrical performance of plasma charge-up monitoring sensor.

Sensitivity Analysis of Plasma Charge-up Monitoring Sensor Using Neural Networks

  • Lee, Sung-Joon;Kim, Sun-Phil;Soh, Dae-Wha;Hong, Sang-Jeen
    • 한국정보통신학회:학술대회논문집
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    • 한국해양정보통신학회 2005년도 추계종합학술대회
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    • pp.303-306
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    • 2005
  • High aspect ration via-hole etching process has emerged as one of the most crucial means to increase component density for ULSI devices. Because of charge accumulation in via hole, this sophisticated and important process still hold several problems, such as etching stop, loading effects during fabrication of integrated circuits. Indeed, the concern actually depends on accumulated charge. For monitoring accumulated charge during plasma etching process, charge-up monitoring sensor was fabricated and tested under some plasma conditions. This paper presents a neural network-based technique for analyzing and modeling several electrical performance of plasma charge-up monitoring sensor.

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E-빔 조사하에서 유리의 전하축퇴 특성 (Characteristics of Charge Accumulation in Glass Materials under E-Beam Irradiation)

  • 최용성;이경섭
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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    • pp.377-378
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    • 2008
  • Space charge formation in various glass materials under electron beam irradiation was investigated. Charging of spacecraft occurs in plasma and radiation environment. Especially, we focused on an accident caused by internal charging in a glass material that was used as the cover plate of solar panel array, and tried to measure the charge distribution in glass materials under electron beam irradiation by using a PEA (Pulsed Electro-Acoustic method) system. In the case of a quartz glass (pure $SiO_2$), no charge accumulation was observed either during or after the electron beam irradiation. On the contrary, positive charge accumulation was observed in glass samples containing metal-oxide components. It is found that the polarity of the observed charges depends on the contents of the impurities. To identify which impurity dominates the polarity of the accumulated charge, we measured charge distributions in several glass materials containing various metal-oxide components and calculated the trap energy depths from the charge decay characteristics of all glass samples. Furthermore, the dependence of the polarity of accumulated charges on the component of glass materials is discussed by using the models of energy bands.

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감가상각누적비율함수를 이용한 감가상각방법의 활용을 위한 자료 (Data for the Application of Depreciation Method Using the Accumulated Depreciation Rate Function)

  • 손진현
    • 한국콘텐츠학회논문지
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    • 제15권1호
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    • pp.519-526
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    • 2015
  • 본 연구에서는 이전에 저자가 제안한 감가상각누적비율함수를 이용한 감가상각방법의 실질적인 활용을 위한 보다 상세한 설명을 제시한다. 감가상각누적비율함수는 상각대상금액에 대한 임의의 시점까지의 상각누적비율 값을 제공해 주는 함수로, 시간의 경과에 기반을 둔 감가상각방법에 활용될 수 있다. 이 함수를 사용하면 매 회기의 상각액이 일정하거나, 점차 감소하거나, 점차 증가하는 모든 경우의 상각금액을 체계적으로 계산해낼 수 있어, 각 자산의 특성에 맞는 다양한 감각상각형태를 합리적으로 선택하여 사용할 수 있다. 또한, 상각누적비율이 시간의 연속함수로 표현됨으로써 기중에 자산을 취득하거나 처분하는 경우에도 체계적이고 일관성 있게 감가상각비를 상계할 수 있게 된다. 다만, 함수의 매개변수 값을 얼마로 지정할 것인가 하는 문제가 존재하는데 본 연구에서 그에 대한 자료를 제공한다.

XLPE/SXLPE laminate의 계면전하 거동 (Interfacial charge Behaviors in XLPE/SXLPE Laminates)

  • 고정우;남진호;서광석
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 하계학술대회 논문집
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    • pp.897-900
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    • 2001
  • Space charge distributions in silane crosslinked polyethylene (SXLPE)/ crosslinked polyethylene (XLPE) laminates was investigated using a pulsed electroacoustic (PEA) method. XLPE shows heterocharge while SXLPE shows homocharge. Positive charge is accumulated at the interface of SXLPE/XLPE laminate when applied electric field is more than 20 kV/mm. The charge profile at various temperatures was also acquired using temperature-controllable PEA system. Although applied electric field is only 8.6 kV/mm, positive interfacial charge starts to appear near 50$^{\circ}C$.

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