• Journal of the Korean Ceramic Society
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• v.42 no.5 s.276
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• pp.326-332
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• 2005

Phase transformation effects on mechanical properties of $Ge_2Sb_2Te_5$, which is a promising candidate material for Phase Change Random Access Memory (PRAM), were studied. $Ge_2Sb_2Te_5$ thin films, which was thermally annealed with different conditions, were analyzed using XRD, AFM, 4-point probe method and reflectance measurement. As the temperature and the dwelling time increased, crystallity and grain size increased, which enhanced elastic modulus and hardness. Furthermore, N2 doping, which was used for better electrical properties, was proved to decrease elastic modulus and hardness of $Ge_2Sb_2Te_5$.

• Phonetics and Speech Sciences
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• v.1 no.1
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• pp.77-86
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• 2009

This study observes how the combined intervention program effects on the acquisition reading pronunciation of Korean phonological process words and the acquisition aspects of each phonological process rules to four Korean learners whose first language is Chinese. The training program is the combination of multisensory Auditory, Visual and Kinethetic (AVK) approach, wholistic approach, and metalinguistic approach. The training purpose is to evaluate how accurately they read the words of the phonological process which have fortisization, nasalization, lateralization, intermediate sound /ㅅ/ (/${\int}iot"$/). We access how they read the untrained words which include the four factors above. The intervention effects are analyzed by the multiple probe across subjects design. The results indicate that the combined phonological process rule explanation and the words activity intervention affects the four Chinese subjects in every type of word. The implications of the study are these: First, it suggests the effect of Korean pronunciation intervention in a concrete way. Second, it offers how to evaluate the phonological process and how to train people who are learning Korean language.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.2064-2067
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• 2000

In our country, most region is composed of mountains and people have recently been displeased with the construction of the substations in their vicinity so the substations newly built are mainly constructed with GIS system in the small area that has high soil resistivity near mountain. Therefore, nowadays the design of substation grounding system has been difficult, and the additional considerations are needed. UC substation was also difficult to design the grounding system because of so small substation area and high soil resistivity. This paper shows the examples of reducing the grounding system resistance reasonably by using several ways. Designing the ground grid electrode in the access road, deep electric earth probe, changing the substation soil with the law level resistivity soil. This report deals with the computer simulation of the grounding system resistance about the ways illustrated above.

• Journal of the Korean Society for Precision Engineering
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• v.10 no.3
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• pp.117-124
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• 1993

This paper presents the study on the magnetic field analysis of magnetid deflection yoke using integral equation method. An integral equation method is developed for the computer modeling of the magnetic fields produced by color CRT and T.V. deflection yoke. Deflection of electron beams using magnetic fields is applied in a variety of display instruments such as te.evision receivers, electron probe instruments, etc. The magnetic field is solved by dividing these into the finite elements in the whole domain : the saddle coil which deflects the electron heam horizontally, the toroidal coil which deflects it vertically, magnetic core which enhances the magnetid fields genterated by the both coils. Using oblate spheroidal coordinates, this paper has had an easier access to the shape of magnetic deflection yoke chasing the boundaries than other coordinates.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.70-70
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• 2009

Si 도핑한 $Ge_2Sb_2Te_5$ 박막은 비정질상에서의 열적 안정성증가, fcc에서 hex상으로의 상전이 억제, 활성화 에너지 증가 등의 특성을 보인다. 본 연구에서는 Si 도핑에 의한 $Ge_2Sb_2Te_5$ 박막의 전기적 그리고 구조적인 특성에 관한 실험을 진행하였다. 실험에 사용된 Si 도핑 $Ge_2Sb_2Te_5$ 박막은 Si 기판 위에 radio frequency power supply를 사용해 Si과 $Ge_2Sb_2Te_5$ 타겟을 co-sputtering하여 증착하였다. Si의 sputtering 파워를 달리하여 실리콘의 농도를 다르게 증착 하였고 X-ray photoelectron spectroscopy (XPS)를 사용하여 박막의 Si 농도를 측정하였다. 증착된 박막은 질소 분위기 하에서 $5\;^{\circ}C$/min으로 열처리 하여 여러 온도와 Si 농도에서의 박막의 특성을 측정하였다. 열처리 전, 후의 박막은 X-ray diffraction (XRD) 분석을 통하여 각각의 온도에서의 구조적 특성을 분석하였다. 열처리 온도에 따르는 필름의 전기적 특성 파악을 위해서 four-point probe를 이용하여 박막의 면저항을 측정하였고 그 값은 3 회 이상 측정하여 평균값을 사용하였다. Nano-pulse scanner를 사용하여 다양한 파워범위와 펄스폭 범위에서의 박막의 상변화에 따른 반사도 차이를 측정하여 각 조성에서의 비정질-결정질상 변화속도를 분석하였다.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.30 no.10B
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• pp.630-638
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• 2005

As real-time media applications based on IP multicast networks spread widely, the end-to-end QoS (quality of service) provisioning for these applications have become very important. To guarantee the end-to-end QoS of multi-party media applications, it is essential to monitor the time-varying status of both network metrics (i.e., delay, jitter and loss) and system metrics (i.e., CPU and memory utilization). In this paper, targeting the multicast-enabled AG (Access Grid) group collaboration tool based on multi-Party real-time media services, a hybrid monitoring scheme that can monitor the status of both multicast network and node system is investigated. It combines active monitoring and passive monitoring approaches to measure multicast network. The active monitoring measures network-layer metrics (i.e., network condition) with probe packets while the passive monitoring checks application-layer metrics (i.e., user traffic condition by analyzing RTCP packets). In addition, it measures node system metrics from system API. By comparing these hybrid results, we attempt to pinpoint the causes of performance degradation and explore corresponding reactions to improve the end-to-end performance. The experimental results show that the proposed hybrid monitoring can provide useful information to coordinate the performance improvement of multi-party real-time media applications.

• Progress in Medical Physics
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• v.3 no.2
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• pp.43-57
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• 1992

Phase detector techique provides a unique probe to membrane recycling phenomenon by enabling dynamic monitoring of cell membrane capacitance. However, it has inherent errors due to constant changes in measurement environments. The present study analyzed several error sources to develope application criteria of this technique. and the following was found based on a theoretical analysis. The initial phase angle has to be appropriately selected to minimize the error due to perturbation of access and membrane conductances. Excitation frequency is also important to determine the initial phase angle. However. deviation of the phase angle from a predetermined initial value during the measurement period does not affect capacitance estimation to a significant degree. Despite an appropriate initial phase selection an error in scaling factor is expected for a large increase in capacitance during exocytosis. which may be overcome by iteratively correcting the scaling factor over the measurement period. These results will provide a useful guideline in practical application of this technique.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.3
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• pp.199-205
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• 2010

The crystallization speed (v) of amorphous (InTe)$_x$(GeTe) (x = 0.1, 0.3 and 0.5) films and their thermal, optical and electrical behaviors have been investigated using nano-pulse scanner (wavelength = 658 nm, laser beam diameter < 2 ${\mu}m$), X-ray diffraction (XRD), 4-point probe and UV-vis-IR spectrophotometer. These results were compared with those of $Ge_2Sb_2Te_5$ (GST) film, comprehensively utilized for phase-change random access memory (PRAM). Both v-value and thermal stability of (InTe)$_{0.1}$(GeTe) and (InTe)$_{0.3}$(GeTe) films could be enhanced in comparison with those of the GST. Contrarily, the v-value in the (InTe)$_{0.5}$(GeTe) film was so drastically deteriorated that we could not quantitatively evaluate it. This deterioration is thought because amorphous (InTe)$_{0.5}$(GeTe) film has relatively high reflectance, resulting in too low absorption to cause the crystallization. Conclusively, it could be thought that a proper compositional (InTe)$_x$(GeTe) films (e.g., x < 0.3) may be good candidates with both high crystallization speed and thermal stability for PRAM application.

• Journal of the Korea Society for Simulation
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• v.9 no.4
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• pp.51-58
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• 2000

The control of the data retention time is a main issue for realizing future high density dynamic random access memory. The novel junction process scheme in sub-micron DRAM cell with STI(Shallow Trench Isolation) has been investigated to improve the tail component in the retention time distribution which is of great importance in DRAM characteristics. In this' paper, we propose the new implantation scheme by gate-related ion beam shadowing effect and buffer-enhanced ${\Delta}Rp$ (projected standard deviation) increase using buffered N-implantation with tilt and 4X(4 times)-rotation that is designed on the basis of the local-field-enhancement model of the tail component. We report an excellent tail improvement of the retention time distribution attributed to the reduction of electric field across the cell junction due to the redistribution of N-concentration which is Intentionally caused by ion Beam Shadowing and Buffering Effect using tilt implantation with 4X-rotation. And also, we suggest the least requirements for adoption of this new implantation scheme and the method to optimize the key parameters such as tilt angle, rotation number, Rp compensation and Nd/Na ratio. We used MEDICI Simulator to confirm the junction device characteristics. And measured the refresh time using the ADVAN Probe tester.

• Journal of Magnetics
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• v.2 no.3
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• pp.96-100
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• 1997

A spin valve structure of NiO(40 nm)/Co(2 nm)/Cu(2.6 nm)/Co(x nm)/Ta(5 nm) has been investigated for the application of magnetic random access memory (MRAM). The spin valve structure exhibited very large difference in the coercivities between pinned and free layers, a relatively high GMR ratio, and a low free layer coercivity. The spin valves were prepared by sputtering and were characterized by dc 4-point probe, and VSM. The spin valves with combined free layer exhibited a maximun GMR ratio of 10.4% with a free layer coercivity of about 82 Oe. The spin valves with a single 10 nm thick a-CoNbZr free layer exhibited a GMR ratio of about 4.3% with a free layer coercivity of about 12 Oe. The GMR ratio of the spin valves increased by addition of Co between Cu and a-CoNbZr. It has been confirmed that the coercivity of free layer can be decreased by increasing the thickness of a-CoNbZr. It has been confirmed that the coercivity of free layer can be decreased by increasing the thickness of a-CoNbZr layer without losing the GMR ratio substantially, which was mainly due to high resistivity of the amorphous "layers".