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http://dx.doi.org/10.4191/KCERS.2005.42.5.326

Phase Transformation Effect on Mechanical Properties of Ge2Sb2Te5 Thin Film  

Hong, Sung-Duk (Department of Ceramic Engineering, Yonsei University)
Jeong, Seong-Min (Department of Ceramic Engineering, Yonsei University)
Kim, Sung-Soon (Department of Ceramic Engineering, Yonsei University)
Lee, Hong-Lim (Department of Ceramic Engineering, Yonsei University)
Publication Information
Journal of the Korean Ceramic Society / v.42, no.5, 2005 , pp. 326-332 More about this Journal
Abstract
Phase transformation effects on mechanical properties of $Ge_2Sb_2Te_5$, which is a promising candidate material for Phase Change Random Access Memory (PRAM), were studied. $Ge_2Sb_2Te_5$ thin films, which was thermally annealed with different conditions, were analyzed using XRD, AFM, 4-point probe method and reflectance measurement. As the temperature and the dwelling time increased, crystallity and grain size increased, which enhanced elastic modulus and hardness. Furthermore, N2 doping, which was used for better electrical properties, was proved to decrease elastic modulus and hardness of $Ge_2Sb_2Te_5$.
Keywords
PRAM; Phase transformation; Elastic modulus; Hardness; Annealing;
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