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Phase Transformation Effect on Mechanical Properties of Ge2Sb2Te5 Thin Film

Ge2Sb2Te5 박막의 상변화에 의한 기계적 물성 변화

  • 홍성덕 (연세대학교 세라믹공학과) ;
  • 정성민 (연세대학교 세라믹공학과) ;
  • 김성순 (연세대학교 세라믹공학과) ;
  • 이홍림 (연세대학교 세라믹공학과)
  • Published : 2005.05.01

Abstract

Phase transformation effects on mechanical properties of $Ge_2Sb_2Te_5$, which is a promising candidate material for Phase Change Random Access Memory (PRAM), were studied. $Ge_2Sb_2Te_5$ thin films, which was thermally annealed with different conditions, were analyzed using XRD, AFM, 4-point probe method and reflectance measurement. As the temperature and the dwelling time increased, crystallity and grain size increased, which enhanced elastic modulus and hardness. Furthermore, N2 doping, which was used for better electrical properties, was proved to decrease elastic modulus and hardness of $Ge_2Sb_2Te_5$.

Keywords

References

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