• Journal of the Korean Society for Precision Engineering
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• v.29 no.11
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• pp.1164-1169
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• 2012

This paper presents a study of an integrated infrared (IR) photo sensor for display application. We fabricated hydrogenated amorphous silicon thin film transistor (a-Si:H TFT) and hydrogenated amorphous silicon germanium thin film transistor (a-SiGe:H TFT) which were bottom gate structure. We investigated the dependence of a-SiGe:H TFT characteristics on incident wavelengths. We proposed photo sensor which responded to wavelengths of IR region. Proposed pixel circuit of photo sensor was consists of switch TFT and photo TFT, and one capacitor. We developed integrated photo sensor circuit and investigated the performance of the proposed sensor circuit according to the input wavelengths. The developed photo sensor circuit with a-SiGe:H TFT was suitable for IR.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.81-84
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• 2004

Required characteristics of poly-Si TFT's are investigated for the implementation of analog circuits to be integrated on System-on-Glass (SoG). Matching requirements on resistor values, threshold voltage and mobility of poly-Si TFT's are derived as a function of the resolution of display system. Effective mobility of poly-Si TFT's required for the realization of source driver is analyzed for various panel sizes.

• Proceedings of the KIEE Conference
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• 2004.11a
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• pp.20-22
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• 2004

유기 EL(Organic Light Emitting diode : OLED)은 자체발광 소자로서 액정 디스플레이(Liquid Crystal Display)에 비해 빠른 응답속도, 넓은 시야각 등의 뛰어난 화질 표현이 가능하다. 구동 박막 트랜지스터(TFT)의 전류가 OLED의 휘도를 결정하므로, 고품질의 영상을 위해 미세한 TFT 전류 조절 능력이 매우 중요하다. 비정질 실리콘(a-Si) TFT는 그레인 구조를 갖는 다결정 실리콘(poly-Si) TFT에 비해 균일한 전기적 특성을 나타내지만, 장시간 구동에 따른 문턱전압의 열화가 발생한다. 본 논문에서는 상기의 문제점을 최소화하기 위하여 positive bias에 의한 열화를 negative bias로 어닐링하는 구동방법을 제안하였다. 본 회로는 2개의 게이트 선택 신호와 6개의 a-Si TFT로 이루어져 있다. 실험 결과를 통해 추출된 소자 parameter를 바탕으로 제안된 회로의 simulation을 수행 및 검증하였다. 본 회로는 a-Si TFT에서 발생하는 문턱전압 열화 등의 신뢰성 문제를 감소시킨다.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.2
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• pp.111-114
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• 2008

We studied the influence of nanocrystalline silicon (nc-Si) thin film thickness on top gate nc-Si thin film transistor (TFT) fabricated at $180^{\circ}C$. The nc-Si thickness affects the characteristics of nc-Si TFT due to the nc-Si growth similar to a columnar. As the thickness of nc-Si increases from 40 nm to 200 nm, the grain size was increased from 20 nm to 40 nm. Having a large grain size, the thick nc-Si TFT surpasses the thin nc-Si TFT in terms of electrical characteristics such as field effect mobility. The channel resistance was decreased due to growth of the grain. We obtained the experimental results that the field effect mobility of the fabricated devices of which nc-Si thickness is 60, 90 and 130 nm are 26, 77 and $119\;cm^2/Vsec$, respectively. The leakage current, however, is increased from $7.2{\times}10^{-10}$ to $1.9{\times}10^{-8}\;A$ at $V_{GS}=-4.4\;V$ when the nc-Si thickness increases. It is originated from the decrease of the channel resistance.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.4
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• pp.292-297
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• 2003

We fabricated a single crystal silicon thin film transistor for active matrix organic light emitting displays(AMOLEDs) using silicon on insulator wafer (SOI wafer). Poly crystal silicon thin film transistor(poly-Si TFT) Is actively researched and developed nowsdays for a pixel switching devices of AMOLEDs. However, poly-Si TFT has some disadvantages such as high off-state leakage currents and low field-effect mobility due to a trap of grain boundary in active channel. While single crystal silicon TFT has many advantages such as high field effect mobility, low off-state leakage currents, low power consumption because of the low threshold voltage and simultaneous integration of driving ICs on a substrate. In our experiment, we compared the property of poly-Si TFT with that of SOI TFT. Poly-Si TFT exhibited a field effect mobility of 34 $\textrm{cm}^2$/Vs, an off-state leakage current of about l${\times}$10$\^$-9/ A at the gate voltage of 10 V, a subthreshold slope of 0.5 V/dec and on/off ratio of 10$\^$-4/, a threshold voltage of 7.8 V. Otherwise, single crystal silicon TFT on SOI wafer exhibited a field effect mobility of 750 $\textrm{cm}^2$/Vs, an off-state leakage current of about 1${\times}$10$\^$-10/ A at the gate voltage of 10 V, a subthreshold slope of 0.59 V/dec and on/off ratio of 10$\^$7/, a threshold voltage of 6.75 V. So, we observed that the properties of single crystal silicon TFT using SOI wafer are better than those of Poly Si TFT. For the pixel driver in AMOLEDs, the best suitable pixel driver is single crystal silicon TFT using SOI wafer.

• Journal of Information Display
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• v.2 no.2
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• pp.1-6
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• 2001

A $1"{\times}l"$, $512{\times}512$ poly-Si TFT-LCD with a new integrated 8-bit parallel-serial digital data driver was proposed and designed. For high resolution, the proposed parallel-serial digital driver used serial video data rather than parallel ones. Thus, digital circuits for driving one column line could be integrated within very small width. The parallel-serial digital data driver comprised of shift registers, latches, and serial digital-to-analog converters (DAC's). We designed a $1"{\times}l"$, $512{\times}512$ poly-Si TFT-LCD with integrated 8-bit parallel-serial digital data drivers by a circuit simulator which has physical-based analytical model of poly-Si TFT's. The fabricated shift register well operated at 2 MHz and $V_{DD}$=10V and the fabricated poly-Si TFT serial DAC's, which converts serial digital data to an analog signal, could convert one bit within $2.8{\mu}s$. The driver circuits for one data line occupied $8100{\times}50{\mu}m^2$ with $4{\mu}m$ design rule.

• Electronics and Telecommunications Trends
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• v.27 no.5
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• pp.109-125
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• 2012

액정 디스플레이의 산업 규모는 놀라운 속도로 확대되고 있다. 그 원동력이 된 것이 박막 트랜지스터(Thin Film Transistor: TFT) 기술의 발전에 있다. 비정질 실리콘(Amorphous Silicon: a-Si) TFT 기술은 대형 액정 TV를 탄생시키고, 저온 폴리실리콘 TFT는 휴대전화 등의 중소형 디스플레이와 AMOLED의 핵심 기술이 되었다. 또한 다양한 TFT 기술 seeds가 계속해서 출현하여 정보 인프라와 생활 스타일에 맞춘 새로운 정보기기의 출현을 예감시키고 있다. 새로운 응용제품의 요구는 새로운 기술 개발의 견인차가 되고 있다. 최근에는 이러한 요구에 따라 산화물 TFT, 마이크로 결정실리콘(microcrystalline Si: ${\mu}c-Si$) TFT, 유기물 TFT 등의 기술도 활발하게 연구개발되고 있다. 본고에서는 지금까지의 TFT 기술 개발의 발전사를 뒤돌아보고 지금부터의 발전 방향을 박막 트래지스터 기술 이노베이션 관점으로부터 전망하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.413-418
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• 2006

Highly stable thin-film transistor (TFT) pixel employing both low temperature polycrystalline silicon (LTPS) and amorphous silicon (a-Si) for active matrix organic light emitting diode (AMOLED) is discussed. ELA (excimer laser annealing) LTPS-TFT pixel should compensate $I_{OLED}$ variation caused by the non-uniformity of LTPS-TFT due to the fluctuation of excimer laser energy and amorphous silicon TFT pixel is desired to suppress the decrease of $I_{OLED}$ induced by the degradation of a-Si TFT. We discuss various compensation schemes of both LTPS and a-Si TFT employing the voltage and the current programming.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.42-45
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• 2002

Small sized LTPS TFT-LCDs are developed and evaluated. Sine the fabrication process is optimized for the productivity of huge glass substrate, the pattern size is above 5${\mu}m$. The panels with integrated digital data drivers are not satisfactory to compete with a-Si technology. Therefore, LTPS panels are implemented by PMOS technology and it is proved that they can be competitive with a-Si TFT-LCDs in terms of performance and cost.

• Proceedings of the KIEE Conference
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• 2002.11a
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• pp.71-73
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• 2002

본 연구에서는 TFT-LCD 의 동작특성을 정확하게 계산하기 위해 준 실험적인 TFT 모델을 사용하여 a-Si TFT poly-Si TFT, Organic TFT에 대하여 파라미터를 추출하였다. 이렇게 추출된 TFT의 파라미터를 TFT-LCD 등가회로에 적용하여 화소의 동작 특성에 관하여 연구하였다. 또한 보다 정확한 시뮬레이션을 위하여 VLSI분야에서 사용되는 준 실험적인 정정용량 모델과 액정의 특성과 인가된 전압에 의존하는 액정 용량모델들을 사용하여 화소의 충 방전 특성을 시뮬레이션 하였는데 대면적 고화질의 패널일수록 특성이 우수한 TFT가 적용되어야 하며, 유기 TFT를 TFT-LCD에 적용시키기 위하여 유기 TFT의 성능향상 및 고전압의 구동방식이 필요하게 된다.