• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.05a
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• pp.43-46
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• 1995

We fabricate a bottom gate a-Si:H TFT on N-Type <100> Si wafer. According to the variation of gate and drain voltage, the hysteresis characteristic curves were measured experimentally. Also, we showed that the model predict the hysteresis characteristic successfully. Drain current on the hysteresis characteristic currie showed an exponential variation. Hysteresis area of TFT increased with the drain voltage increase and decreases with the drain voltage decrease.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.20-23
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• 2008

We proposed a-Si:H TFT (hydrogenated amorphous silicon thin film transistor) level shifter which reduced number of power sources. To reduce the number of power sources from four to two, modified bootstrapped inverter was used for the level shifter. The shift register was verified by PSPICE circuit simulation and fabricated. The fabricated level shifter successfully shifted low input (0 to 5 V) to high level output (-7 to 23 V).

• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.7
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• pp.1135-1143
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• 1994

We fabricate a bottom gate a-Si:H TFT on N-Type <100> Si wafer. According to the Variation of gate and drain voltage, the hysteresis characteristic curves were measured experimentally. Also, we proposed model equation and showed that the model predict the hysteresis characteristic successfully. Drain current on the hysteresis characteristic curve showed an exponential variation. Hysteresis area of TFT increased with the drain voltage increase and decreases with the drain voltage decrease.

• Journal of Information Display
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• v.2 no.2
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• pp.22-26
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• 2001

This paper presents the idea of staggered voting for the efficient TMR implementation of shift register chains for improving the yield of Poly-Si TFT-LCD driving circuits. The paper discusses the characteristic features of staggered voting and performs a quantitative evaluation of its effectiveness. Staggered voting allows us to improve the reliability of a single-voter TMR chain significantly when the probability of a voter failure is not negligible.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1165-1167
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• 2007

Delta doping method can separate the threshold voltage control region from the charge transport region in a-Si TFT, whereby the threshold voltage of a TFT could be modified. Threshold voltage could be changed by delta doping, while field effect mobility was estimated to be 80% of that of standard TFT.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.10 no.1
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• pp.111-116
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• 2006

In this paper, the image sensor using the a-Si:H TFT is proposed. The optimum amorphous silicon thin film is deposited using plasma enhanced chemical vapor deposition (PECVD). TFT and photodiode both with the thin film are fabricated and form image sensor. The photodiode shows that Idark is $10^{-12}A$, Iphoto is $10^{-9}A$ and Iphoto/Idark is $10^3$, respectively. In the case of a-Si:H TFT, it indicates that Ion/Ioff is $10^6$, the drain current is a few ${\mu}A$ and Vth is $2\~4$ volts. For the analysis on the fabricated image sensor, the reverse bias of -5 voltage in ITO of photodiode and $70{\mu}sec$ pulse in the gate of TFT are applied. The image sensor with good property was conformed through the measured photo/dark current.

• Electrical & Electronic Materials
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• v.9 no.3
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• pp.277-283
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• 1996

The temperature dependent characteristics of hydrogenerated amorphous silcon thin film transistor (a-Si:H TFT) with a bottom gate of N-Type <100> Si wafer were investigated. Drain current on the hysteresis characteristic curve showed an exponential variation. Hysteresis area of TFT increased with the gate voltage increased and decreased with the small gate voltage. According to the variation of gate voltages, drain current of TFT increased by temperature increase, and hysteresis characteristics mainly depended on the temperature increase. The hysteresis current showed negative characteristics curve over 383K. The hysteresis occurance area and the differences of forward and reverse sweep were increased at the higher temperature. Hysteresis current of I$_{d}$(on/off) ratio decreased at the lower temperature and increased at the higher temperature.e.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.69-74
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• 2004

System-on-glass technology made with low temperature poly-Si TFT has been rapidly advancing in recent years. We have developed a low-power, narrow edged frame, 1.9inch system-on-glass LCD which fully integrates a 16-bit RGB interface driver and all power circuits required for driving the LCD. In this paper, the latest poly-Si TFT circuit technologies used in the newly developed LCD are discussed. The development trends are also reviewed.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1546-1549
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• 2006

We have developed $EPLaR^{TM}$, a new way of making flexible electrophoretic displays. The TFTs have the same good performance, reliability and mature manufacturing processes as TFTs used in LCD monitors and LCD-TVs. We are working with partners to show that plastic displays can be made in existing TFT-LCD factories alongside glass LCDS. In this talk we describe the EPLaR process and show results for TFT arrays on plastic made in a factory by standard ${\alpha}$-Si TFT processing.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.39-39
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• 2003