• 한국전기전자재료학회논문지
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• 제35권5호
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• pp.488-493
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• 2022

Generally, diamond-like carbon films (a-C:H, DLC) have been shown to have a low coefficient of friction, a high hardness and a low wear rate. Pd-doped C thin film was fabricated using a dual magnetron sputtering with two targets of graphite and palladium. Graphite target RF power was fixed and palladium target RF power was varied. The structural, physical, and surface properties of the deposited thin film were investigated, and the correlation among these properties was examined. The doping ratio of Pd increased as the RF power increased, and the surface roughness of the thin film decreased somewhat as the RF power increased. In addition, the hardness value of the thin film increased, and the adhesive strength was improved. It was confirmed that the value of the contact angle indicating the surface energy increases as the RF power increases. It was concluded that the increase in RF power contributed to the improvement of the physical properties of Pd-doped C thin film.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2002년도 추계종합학술대회
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• pp.784-787
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• 2002

Sol-gel 법으로 PLT(28) 박막을 제작하여, 박막의 구조적 및 전기적 특성을 조사하였다. XRD와 AFM 관찰결과, $650^{\circ}C$에서 annealing 된 박막은 완전한 perovskite 구조를 가지며 표면거칠기도 22$\AA$ 으로 양호한 값을 나타내었다. Pt/TiO$_{x}$SiO2/Si 기판위에 PLT(28) 박막을 증착시켜 planar 형태의 캐패시터를 제작하여 전기적 특성을 조사하였다. 그 결과, PLT(28) 박막은 상유전상을 가지며,10kHz에서 비유전률과 유전손실은 761 과 0.024 이었다. 또, 5V에서 전하축적 밀도와 누설전류밀도는 각각 134fC/$\mu$m2 과 1.01 $\mu$A/cm2 이었다. 이로부터, PLT(28) 박막이 차세대 DRAM 용 캐패시터 절연막으로 사용될 수 있는 유망한 재료라고 생각된다.다.

• 센서학회지
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• 제1권2호
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• pp.117-123
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• 1992

적층구조의 Pt-Sn 박막을 히터 위에서 열산화하여 $Pt-SnO_{2-x}$ 박막형 CO 가스감지소자를 제조하였다. 열증착법으로 증착된 Sn의 두께는 $4000{\AA}$이었으며 그 위에 D.C. sputtering법으로 증착된 Pt의 두께는 $14{\AA}{\sim}71{\AA}$ 이었다. XRD 분석에서 $Pt-SnO_{2-x}$ 박막은 $200{\AA}$ 정도의 입경과 주방향성이 (110)인 $(SnO_{2}){\cdot}6T$ 결정상을 보였다. $Pt-SnO_{2-x}$ 박막소자(Pt 두께 : $43{\AA}$)는 6000 ppm의 CO에 대해 80% 정도의 감도와 CO에 대해 높은 선택도를 나타내었다. 그리고 CO에 고감도를 갖는 $Pt-SnO_{2-x}$ 박막소자의 열산화 온도와 동작온도가 각각 $500^{\circ}C$와 $200^{\circ}C$이었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.376-377
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• 2006

This paper presents the characteristics of Ta-N thin film strain gauges that are suitable for harsh environemts, which were deposited on thermally oxidized Si substrates by DC reactive magnetronsputtering in an argon-nitrogen atmosphere (Ar-$N_2$ (4 ~ 16 %)). These films were annealed for 1 hr in $2{\times}10^{-6}$ Torr in a vacuum furnace with temperatures that ranged from 500 - $1000^{\circ}C$. The optimized deposition and annealing conditions of the Ta-N thin film strain gauges were determined using 8 % $N_2$ gas flow ratio and annealing at $900^{\circ}C$ for 1 hr. Under optimum formation conditions, the Ta-N thin film strain gauges obtained a high electrical resistivity, ${\rho}\;=\;768.93\;{\mu}{\Omega}{\cdot}cm$, a low temperature coefficient of resistance, $TCR\;=\;-84\;ppm/^{\circ}C$ and a high temporal stability with a good longitudinal gauge factor, GF=4.12. The fabricated Ta-N thin film strain gauges are expected to be used inmicromachined pressure sensors and load cells that are operable under harsh environments.

• E2M - 전기 전자와 첨단 소재
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• 제9권8호
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• pp.836-850
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• 1996

In this study, we have analyzed structural analysis and measured ferroelectric characteristics of PZT thin films prepared by sol gel process with different sintering conditions and different Zr/Ti mot%. When the Zr mot% of PZT thin film was increased, it was found that the remanent. polarization and coercive field were decreased and increased, respectively. Also, the maxium dielectric constant of PZT(50/50) thin film was 786.8. We got double hysteresis(anti-fcrroelectric) curve from PbZrO$_{3}$ thin film. As heating rate goes up, pyrochlore phase of PZT thin film was decreased and dielectric and ferroelectric characteristics were improved. As a result of variation of sintering temperature and time 500.deg. C-800.deg. C and 5 sec.-8 hours, respectively, we got optimal sintering temperature and time. The optimium sintering temperature and time of conventional furnace method and rapid thermal processing method were 650.deg. C-700.deg. C for 30-60 minutes and 700.deg. C/20 seconds-2 minutes, respectively.

• 한국재료학회지
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• 제21권3호
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• pp.144-148
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• 2011

We have investigated the structural and optical properties of Ga-doped ZnO (GZO) thin films deposited by RF magnetron sputtering at various deposition temperatures from 100 to $500^{\circ}C$. All the GZO thin films are grown as a hexagonal wurtzite phase with highly c-axis preferred parameter. The structural and electrical properties are strongly related to deposition temperature. The grain size increases with the increasing deposition temperature up to $400^{\circ}C$ and then decreases at $500^{\circ}C$. The dependence of grain size on the deposition temperature results from the variation of thermal activation energy. The resistivity of GZO thin film decreases with the increasing deposition temperature up to $300^{\circ}C$ and then decreases up to $500^{\circ}C$. GZO thin film shows the lowest resistivity of $4.3{\times}10^{-4}\;{\Omega}cm$ and highest electron concentration of $1.0{\times}10^{21}\;cm^{-3}$ at $300^{\circ}C$. The mobility of GZO thin films increases with the increasing deposition temperature up to $400^{\circ}C$ and then decreases at $500^{\circ}C$. GZO thin film shows the highest resistivity of 14.1 $cm^2/Vs$. The transmittance of GZO thin films in the visible range is above 87% at all the deposition temperatures. GZO is a feasible transparent electrode for the application to the transparent electrode of thin film solar cells.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.500-503
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• 2003

We studied the nematic liquid crystal (NLC) aligning capabilities by the UV alignment method on a a-C:H thin film surface. A good LC alignment by UV exposure on the a-C.H thin film surface at 200 ${\AA}$ of layer thickness was achieved. Also, a good LC alignment by the UV alignment method on the a-C:H thin film surface was observed at annealing temperature of 180 $^{\circ}C$. However, the alignment defect of the NLC was observed above annealing temperature of 200 $^{\circ}C$. Consequently, the good thermal stability of LC alignment by the UV alignment method on the a-C:H thin film surface can be achieved.

• 전자공학회논문지A
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• 제31A권9호
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• pp.89-95
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• 1994

BaTiO$_{x}$ thin film as insulator and ZnS:Mn film as phosphour layer for thin film electrouminescent device have been deposited by thermal evalporation and dependence of electrical and opeical characeristics have been studied. The optimum deposition conditions for the BaTiO$_{x}$ thin film are such that BaTiO$_{3}$/TiO$_{2}$ mixing ratio was 0.7, sub strate temperature was 100 $^{\circ}C$ and annealing time was 1 hour at 300 $^{\circ}C$. In this case, the dielectric constant of BaTiO$_{x}$ thin film fabricated under those optimum conditions was 26, and for AnS:Mn thin films, the crystallization was done well and the deposition rate was 1300 $\AA$/min when substrate temperature was 200$^{\circ}C$. Thin film Electroluminescent devices were fabricated using BaTiO$_{x}$ and AnS:Mn thin films. The luminescence threshold voltage of device was 41.5 V and brightness was 1.2${\mu}W/cm^{2}$ at appied voltage of 50 V.

• 전자공학회논문지D
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• 제35D권5호
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• pp.33-39
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• 1998

The BST (Ba$_{1-x}$ Sr$_{x}$TiO$_{3}$)(50/50) thin film has been grown by RF magnetron reactive sputtering and its characteristics such as crystallization, surface roughness, and electrical properties have been investigated with varying the film thickness. The crystallization and surface roughness of BST thin film are investigated by using XRD and AFM, respectively The BST thin film anealed at 800.deg. C for 2 min has pure perovskite structure and good surface roughness of 16.1.angs.. We estimate that the thickness and dielectric constant of interface layer between BST film and electrode are 3nm and 18.9, respectively, by measuring the capacitance with various film thickness. As the film thickness increases form 80nm to 240nm, the dielectric constant at 10kHz increases from 199 to 265 and the leakage current density at 200kV/cm decreases from 0.682.mu.A/cm$^{2}$ to 0.181 .mu.A/cm$^{2}$. In the case of 240nm-thick BST thin film, the charge storage density and leakage current density at 5V are 50.5fC/.mu.m$^{2}$ and 0.182.mu.A/cm$^{2}$, respectively. The values indicate that the BST thin film is a very useful dielectric material for the DRAM capacitor.or.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.469-472
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• 2003

The nematic liquid crystal (NLC) aligning capabilities using a-C:H thin film deposited at the three kinds of rf bias condition were investigated. A high pretilt angle of about $11^{\circ}$ by the ion beam alignment method was observed on the a-C:H thin film (polymer-like carbon) deposited at 1W rf bias condition, and the low pretilt angle of the NLC was observed on the a-C:H thin film(diamond-like carbon) deposited at rf 30W and 60W bias condition. Consequently, the high NLC pretilt angle and the good aligning capabilities of LC alignment by the IB alignment method on the a-C:H thin film deposited at 1W rf bisa condition can be achieved.