• Title/Summary/Keyword: a-C:Ti

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A Study on Synthesis of $Ba_2Ti_9O_{20}$ by Coprecipitation Process and the Effect of $ZrO_2$ Addition (공침법에 의한 $Ba_2Ti_9O_{20}$ 합성과 $ZrO_2$ 첨가효과에 관한 연구)

  • 이병하;이경희;이헌식;전성용
    • Journal of the Korean Ceramic Society
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    • v.30 no.12
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    • pp.1023-1028
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    • 1993
  • To obtain a single phase of Ba2Ti9O20 at lower temperature than previious other researches. We investigated the effect of Zr substitution for predetermined portions of Ti in Ba2Ti9O20. In this study, the four compounds(x=0, 0.028, 0.048, 0.068) of Ba2(Ti1-xZrx)9O20 were prepared by coprecipitation reaction of BaCl2, TiCl4 and ZrOCl2 with (NH4)2CO3 and NH4OH as the coprecipitating agents and pH regulators, in queous solution. Owing to 4.8 mol% addition, the single phase of Ba2Ti9O20 showing high Q was obtained at 115$0^{\circ}C$ which is lower by 25$0^{\circ}C$ than the temperature in case of mechanical mixtures of BaCO3 and TiO2.

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Effects of $TiB_{2},ZrB_{2}$ and Sintering Temperature on SiC Composites Manufactured by Pressureless Sintering (상압소결법에 의해 제조한 SiC 복합체의 특성에 미치는 $TiB_{2},ZrB_{2}$와 소결온도의 영향)

  • 주진영;박미림;신용덕;임승혁
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.381-384
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    • 2001
  • The $\beta$-SiC+ZrB$_2$ and $\beta$-SiC+TiB$_2$ceramic electroconductive composites were pressureless-sintered and annealed by adding l2wt% A1$_2$ $O_3$+Y$_2$ $O_3$(6 : 4wt%) powder as a function of sintering temperature. The relative density showed highest value of 84.92% of the theoretical density for SiC-TiB$_2$ at 190$0^{\circ}C$ sintering temperature. The phase analysis of the composites by XRD revealed of $\alpha$-SiC(6H), TiB$_2$, $Al_{5}$Y$_2$ $O_{12}$ and $\beta$-SiC(15R). Flexural strength showed the highest of 230 MPa for SiC-ZrB$_2$ composites sintered at 190$0^{\circ}C$. The vicker's hardness increased with increasing sintering temperature and showed the highest for SiC-ZrB$_2$ composites sintered at 190$0^{\circ}C$. Owing to YAG, the fracture toughness showed the highest of 6.50 MPa . m$^{1}$2/ for SiC-ZrB$_2$ composites at 190$0^{\circ}C$. The electrical resistivity was measured by the Rauw method from $25^{\circ}C$ to $700^{\circ}C$. The electrical resistivity of the composites showed the PTCR(Positive Temperature Coefficient Resistivity).).

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Corrosion Characteristics of Ti, Ti/Cr Coated and Plasma-Nitrided Surface for Stainless Steel Containing Ti (Ti가 함유된 스테인리스강에서 Ti, Ti/cr코팅표면과 플라즈마질화표면의 부식특성)

  • 최한철;이승훈;김관휴
    • Journal of the Korean institute of surface engineering
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    • v.35 no.6
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    • pp.391-400
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    • 2002
  • Corrosion characteristics of Ti, Ti/Cr coated and plasma-nitrided surface for stainless steel containing Ti have been studied. Stainless steels containing 0.09-0.92wt% Ti were fabricated by using vacuum furnace and solutionized for 1hr at 105$0^{\circ}C$. Ti and Cr coatings were done on solutionized stainless steel surface by EB-PVD. The Ti coated specimen were coated by Cr and were nitrided by plasma at $450^{\circ}C$ for 5hr. Microstructure and phase analysis were performed using SEM, OM and EDX. Corrosion behavior of the coated specimen was investigated by electrochemical test. The coated surface was of fine columnar structure. The Ti/Cr coated surface was denser than the Ti coated and the Ti coated-nitrided surfaces. The corrosion and pitting potential increased in proportion to the Ti content, coating temperature, coating thickness and formation of stable oxide film. The current density in active and passive region decreased in the case of Ti/Cr coated sample and Ti coated-nitrided samples. Especially the plasma nitrided specimen after Ti coating have a good corrosion resistance compared with the Ti coated specimen. The number and size of pits decreased as Ti content of matrix increased.

Corrosion Characteristics of Ti, Ti/Cr Coated and Plasma-Nitrided Surface for Stainless Steel Containing Ti (Ti가 함유된 스테인리스강에서 Ti, Ti/Cr 코팅표면과 플라즈마질화표면의 부식특성)

  • 최한철;이승훈;김관휴
    • Journal of the Korean institute of surface engineering
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    • v.36 no.1
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    • pp.89-98
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    • 2003
  • Corrosion characteristics of Ti, Ti/Cr coated and plasma-nitrided surface for stainless steel containing Ti have been studied. Stainless steels containing 0.09-0.92wt% Ti were fabricated by using vacuum furnace and solutionized for 1hr at $1050^{\circ}C$. Ti and Cr coatings were done on solutionized stainless steel surface by EB-PVD. The Ti coated specimen were coated by Cr and were nitrided by plasma at $450^{\circ}C$ for 5hr Microstructure and phase analysis were performed using SEM, OM and EDX. Corrosion behavior of the coated specimen was investigated by electrochemical test. The coated surface was of fine columnar structure. The Ti/Cr coated surface was denser than the Ti coated and the Ti coated-nitrided surfaces. The corrosion and pitting potential increased in proportion to the Ti content, coating temperature, coating thickness and formation of stable oxide film. The current density in active and passive region decreased in the case of Ti/Cr coated sample and Ti coated-nitrided samples. Especially the plasma nitrided specimen after Ti coating have a good corrosion resistance compared with the Ti coated specimen. The number and size of pits decreased as Ti content of matrix increased.

Preparation of Ferroelectric $Cr_3C_2$ Thin Film Using Sol-Gel Spin Coating Process (솔-젤 회전 코팅법을 이용한 강유전성 $BaTiO_3$ 박막제조)

  • 배호기;고태경
    • Journal of the Korean Ceramic Society
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    • v.31 no.7
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    • pp.795-803
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    • 1994
  • Ferroelectric BaTiO3 thin film was produced using BaTi-ethoxide sol. This sol was prepared from BaTi-ethoxide by a partial hydrolysis with ammonia as a basic catalyst and ethylene glycol as a chelating agent. BaTiO3 thin film was prepared from three continuous spin-coating layers of the sol on bare Si(100) wafer at 2500 rpm followed by pyrolysis at $700^{\circ}C$ for 30 min. After the heat treatment, the film was 0.200$\pm$0.010 ${\mu}{\textrm}{m}$ thick and its grain size was 0.059 ${\mu}{\textrm}{m}$. On the other hand, electrical properties were measured for BaTiO3 thin film separately prepared on Au-deposited silicon wafer. The dielectric constant and loss of the BaTiO3 thin film at room temperature was 150~160 and 0.04 respectively, which was measured at 10 kHz and oscillation level of 0.1 V. In the measurements of the dielectric properties at high temperatures, it was observed that the capacitance of the thin film increases steeply, while the dielectric loss reaches maximum around 1$25^{\circ}C$, which corresponds a phase transition from tetragonal to cubic BaTiO3.

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NOx removal of Mn-Cu-TiO2 and V/TiO2 catalysts for the reaction conditions (반응조건에 대한 Mn-Cu-TiO2촉매와 V/TiO2촉매의 탈질 특성)

  • Jang, Hyun Tae;Cha, Wang Seog
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.17 no.7
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    • pp.713-719
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    • 2016
  • The NOx conversion properties of Mn-Cu-$TiO_2$ and $V_2O_5$/$TiO_2$ catalysts were studied for the selective catalytic reduction (SCR) of NOx with ammonia. The performance of the catalysts was investigated in terms of their $NOx$ conversion activity as a function of the reaction temperature and space velocity. The activity of the Mn-Cu-$TiO_2$ catalyst decreased with increasing reaction temperature and space velocity. However, the activity of the $V_2O_5$/$TiO_2$ catalyst increased with increasing reaction temperature. High activity of the Mn-Cu-$TiO_2$ catalyst was observed at temperatures below $200^{\circ}C$. H2-TPR and XPS analyses were conducted to explain these results. It was found that the activity of the Mn-Cu-$TiO_2$ catalyst was influenced by the thermal shock caused by the change of the initial reaction temperature, whereas the $V_2O_5$/$TiO_2$ catalyst was not affected by the initial reaction temperature. In the case of catalyst C, the $NO_x$ conversion efficiency decreased with increasing space velocity. The decrease in the $NO_x$ conversion efficiency with increasing space velocity was much less for catalyst D than for catalyst C.

Characteristics of Material Properties and Machining Surface in Electrical Discharge Machining of Ti2AlN and Ti2AlC Materials (Ti2AlN과 Ti2AlC 소결체의 마이크로 방전가공에서 재료물성에 따른 가공표면 특성)

  • Choi, Eui-Song;Lee, Chang-Hoon;Baek, Gyung-Rae;Kim, KwangHo;Kang, Myung Chang
    • Journal of Powder Materials
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    • v.22 no.3
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    • pp.163-168
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    • 2015
  • Ti alloys are extensively used in high-technology application because of their strength, oxidation resistance at high temperature. However, Ti alloys tend to be classified very difficult to cut material. In this paper, The powder synthesis, spark plasma sintering (SPS), bulk material properties such as electrical conductivity and thermal conductivity are systematically examined on $Ti_2AlN$ and $Ti_2AlC$ materials having most light-weight and oxidation resistance among the MAX phases. The bulk samples mainly consisted of $Ti_2AlN$ and $Ti_2AlC$ materials with density close to theoretical value were synthesized by a SPS method. Machining characteristics such as machining time, surface quality are analyzed with measurement of voltage and current waveform according to machining condition of micro-electrical discharge machining with micro-channel shape.

Evaluation of TiO2 Photocatalytic Activity with Addition of Carbon Nanotube (탄소나노튜브(CNT)의 첨가에 따른 TiO2의 광촉매 특성 변화 연구)

  • Yeo, In-Chul;Kang, In-Cheol
    • Journal of Powder Materials
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    • v.23 no.6
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    • pp.458-465
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    • 2016
  • A $TiO_2$/CNT nanohybrid photocatalyst is synthesized via sol-gel route, with titanium (IV) isopropoxide and multi-walled carbon nanotubes (MWCNTs) as the starting materials. The microstructures and phase constitution of the nanohybrid $TiO_2$/CNT (0.005wt%) samples after calcination at $450^{\circ}C$, $550^{\circ}C$ and $650^{\circ}C$ in air are compared with those of pure $TiO_2$ using field-emission scanning electron microscopy and X-ray diffraction, respectively. In addition, the photocatalytic activity of the nanohybrid is compared with that of pure $TiO_2$ with regard to the degradation of methyl orange under visible light irradiation. The $TiO_2$/CNT composite exhibits a fast grain growth and phase transformation during calcination. The nanocomposite shows enhanced photocatalytic activity under visible light irradiation in comparison to pure $TiO_2$ owing to not only better adsorption capability of CNT but also effective electron transfer between $TiO_2$ and CNTs. However, the high calcination temperature of $650^{\circ}C$, regardless of addition of CNT, causes a decrease in photocatalytic activity because of grain growth and phase transformation to rutile. These results such as fast phase transformation to rutile and effective electron transfer are related to carbon doping into $TiO_2$.

A Study on Dielectric Properties of $TiO_2$-Based Ceramics ($TiO_2$계 세라믹스의 유전특성에 대한 연구)

  • You, Do-Hyun
    • Proceedings of the KIEE Conference
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    • 2006.10b
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    • pp.167-170
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    • 2006
  • $TiO_{2}-Nb_{2}O_{5}$ sol was prepared using sol-gel method. DTA properties of gel powder had endothermic reaction due to evaporation of propanol and water about $78^{\circ}C$, had exothermic reaction due to propanol combustion about $290^{\circ}C$ and had exothermic reaction due to changing of $TiO_2$ phase about $640^{\circ}C$. Capacitance of thin films increased according to increasing relative humidity, whereas it decreased according to increasing measured frequency.

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The Behavior of Dopants During the Formation of T$TiSi_2$ in the Poly-Si/Single-Si Substrate with Implanted Impurities (불순물이 주입된 Poly-Si/Single-Si 기판에서 $TiSi_2$ 형성시 Dopants의 기동)

  • 최진성;황유상;강성건;김동원;문환구;심태언;이종길;백수현
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.28A no.12
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    • pp.24-30
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    • 1991
  • As a study to use Ti-silicides as interconnection material, the formation of Ti-silicides and the behavior of dopants were investigated for specimens where dopants are introduced on both single-Si substrate and poly-Si that was deposited on the single-Si. Result showed that stable C54 TiSiS12T formed above $700^{\circ}C$ and the formed TiSiS12T had bad surface roughness. And arsenics were chiefly redistributed in TiSiS12T while boron was accumulated near the interface between TiSiS11T and Si during RTA treatment.

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