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Implementation of the High-Quality Audio System with the Separately Processed Musical Instrument Channels (악기별 분리처리를 통한 고음질 오디오 시스템 구현)

  • Kim, Tae-Hoon;Lee, Sang-Hak;Kim, Dae-Kyung;Lee, Sang-Chan
    • The Journal of the Acoustical Society of Korea
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    • v.32 no.4
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    • pp.346-353
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    • 2013
  • This paper deals with the implementation of a high-quality audio system for karaoke. For improving the key/tempo changes performance, we separated the audio into many musical instrument channels. By separating musical instrument channels, high-quality key/tempo changes can be achieved and we confirmed this using the cross-correlation distribution and the MOS evaluation. The improved audio system was implemented using the TMS320C6747 DSP with fixed/floating-point operations. The implemented audio system can perform the multi-channel WMA decoding, the MP3 encoding/decoding, the wav playing, the EQ, and the key/tempo changes in real time. The WMA channels used for processing the separated instrument channels. The audio system includs the MP3 encoding/decoding function for playing and recording and the wav channel for the effect sound.

Characteristics of Piezoelectric and dielectric of PMWN-PZT Ceramics (PMWN-PZT계 압전세라믹의 압전 및 유전특성)

  • 홍종국;이종섭;채홍인;윤만순;정수현
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.6
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    • pp.455-459
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    • 2001
  • In this paper, the dielectric and pizoelectric properties of 0.05Pb(M $n_{04}$ $W_{0.2}$N $b_{0.4}$) $O_3$-0.95(PbZ $r_{x}$ $Ti_{1-x}$ ) $O_3$+yN $b_2$ $O_{5}$ , are investigated as a function of the mole ratio of Zr and the amount of N $b_2$ $O_{5}$ . Also, the phase is analyzed by XRD. When the mole ratio of Zr is 0.51, the electromechanical coupling coefficient( $k_{p}$ ), relative dielectric constant ($\varepsilon$$^{T}$ $_{33}$ /$\varepsilon$$_{0}$ ), piezoelectric stain constrain ( $d_{33}$ and dielectric loss tangent show maximum, while the mechanical quality factor shows minimum value ; $k_{p}$ =56.5%, $d_{33}$ =258pC/N, $\varepsilon$$^{T}$ $_{33}$ /$\varepsilon$$_{0}$ =1170, $Q_{m}$ =1150, tan$\delta$=0.51%. At that composition, MPB which rhombohedral and tetragonal phase coexist in this ternary system is shown by the results of XRD analysis. Also, when the amount of N $b_2$ $O_{5}$ is 0.3wt%, the mechanical quality factor is increased to about 2000. The phase transition temperature of the ternary piezoelectric ceramic system showed about 35$0^{\circ}C$.TEX>.>.>.

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Formation and Regeneration of Conidial Protoplast from Penicilliun verruculosum (Penicillium verruculosum 으로부터 분생자 원형질체의 생성과 재생)

  • 김정호;허정원;정희종;이용규;정기철
    • Korean Journal of Microbiology
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    • v.30 no.3
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    • pp.154-159
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    • 1992
  • Forniation ancl ~regcncration oi' conitlial pro1oplast of Pc, ti~i.rlli~in~~~ c~rr~~culo.hryupmel.- - czllulolytic Ihngus. were examined. By using Novozyme 134(1'!/0 w/c) as a cell wall lytic enzyme. the highest yield of protopl;~sts exceeding 501%, war obtained from the qwollen conidiosporcs preincubatrd in the minimal medium containing 2-tleoxy-D-glucose(2-UC;. 75 pglml) for 10-11 11. No protoplast were obtained horn dormant spores. The regeneration frequency of the protoplasts was 49.2'!11. which was higher than that of mycclium originated protoplast (4.6-17.X1X, . in 0.6 M MgS04. pH 5.6). 'l'lie best osmotic stahilizcr ror the isoaltion and regcueration of thc protoplast was 0.6 M iimmonium sulfatc and 0.6 M magnesiuni sulfhte. respectively. 'I'lie process of the protoplast isolaiton l'ro~n swollen cnnirliospore ancl regeneration ha\, ing two pattcrns from protoplast were obsen'etl through light microscope.

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Efficient DSP Architecture for Viterbi Algorithm (비터비 알고리즘의 효율적인 연산을 위한 DSP 구조 설계)

  • Park Weon heum;Sunwoo Myung hoon;Oh Seong keun
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.30 no.3A
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    • pp.217-225
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    • 2005
  • This paper presents specialized DSP instructions and their architecture for the Viterbi algorithm used in various wireless communication standards. The proposed architecture can significantly reduce the Trace Back (TB) latency. The proposed instructions perform the Add Compare Select (ACS) and TB operations in parallel and the architecture has special hardware, called the Offset Calculation Unit (OCU), which automatically calculates data addresses for the trellis butterfly computations. Logic synthesis has been Performed using the Samsung SEC 0.18 μm standard cell library. OCU consists of 1,460 gates and the maximum delay of OCU is about 5.75 ns. The BER performance of the ACS-TB parallel method increases about 0.00022dB at 6dB Eb/No compared with the typical TB method, which is negligible. When the constraint length K is 5, the proposed DSP architecture can reduce the decoding cycles about 17% compared with the Carmel DSP and about 45% compared with 7MS320c15x.

Prediction of Jominy Hardness Curves Using Multiple Regression Analysis, and Effect of Alloying Elements on the Hardenability (다중 회귀 분석을 이용한 보론강의 조미니 경도 곡선 예측 및 합금 원소가 경화능에 미치는 영향)

  • Wi, Dong-Yeol;Kim, Kyu-Sik;Jung, Byoung-In;Lee, Kee-Ahn
    • Korean Journal of Materials Research
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    • v.29 no.12
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    • pp.781-789
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    • 2019
  • The prediction of Jominy hardness curves and the effect of alloying elements on the hardenability of boron steels (19 different steels) are investigated using multiple regression analysis. To evaluate the hardenability of boron steels, Jominy end quenching tests are performed. Regardless of the alloy type, lath martensite structure is observed at the quenching end, and ferrite and pearlite structures are detected in the core. Some bainite microstructure also appears in areas where hardness is sharply reduced. Through multiple regression analysis method, the average multiplying factor (regression coefficient) for each alloying element is derived. As a result, B is found to be 6308.6, C is 71.5, Si is 59.4, Mn is 25.5, Ti is 13.8, and Cr is 24.5. The valid concentration ranges of the main alloying elements are 19 ppm < B < 28 ppm, 0.17 < C < 0.27 wt%, 0.19 < Si < 0.30 wt%, 0.75 < Mn < 1.15 wt%, 0.15 < Cr < 0.82 wt%, and 3 < N < 7 ppm. It is possible to predict changes of hardenability and hardness curves based on the above method. In the validation results of the multiple regression analysis, it is confirmed that the measured hardness values are within the error range of the predicted curves, regardless of alloy type.

Electrical Properties of PNN-PMN-PZT ceramics for Rosen Type Transformer Applications (Rosen type 변압기 응용을 위한 PNN-PMN-PZT 세라믹스의 전기적 특성)

  • Joo, H.K.;Kim, I.S.;Song, J.S.;Kim, M.S.;Jeong, S.J.;Lee, D.S.
    • Proceedings of the KIEE Conference
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    • 2008.07a
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    • pp.1244-1245
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    • 2008
  • Recently, piezoelectric transformer is applied to wide fields. Multi layer piezoelectric transformer has the advantage of high step up ratio, electromechanical coupling coefficient(Kp) and mechanical quality factor(Qm), but is indicated of peeling-phenomenon of electrode, rising sintering temperature made price of costly electrode. So in this study, it discuss on method for fabrication of rosen type piezoelectric transformers. For the fabrication as rosen type piezoelectric transformers, synthesized the powder using 0.01Pb$(ni_{1/3}Nb_{2/3})O_3$ - 0.08Pb$(Mn_{1/3}Nb_{2/3})O_3$ - 0.91Pb$(Zr_{0506}Ti_{0496})O_3$ (abbreviated as PNN-PMN-PZT) ceramics. The density, microstructure, dielectric and piezoelectric properties as a function of sintering temperature were investigated. The results indicated that the optimized properties of ceramics were obtained at sintering temperature of 1200$^{\circ}C$, showed the value of $d_{33}$=273pC/N, $K_p$=0.60 $Q_m$=1585, ${\varepsilon}_r$=1454, density=7.917$g/cm^3$ and $tan{\delta}$=0.0064.

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Deposition of Spacer-Si3N4 Thin Film for WSi2 Word-Line and Bit-Line (WSi2 word-line 및 bit-line용 spacer-Si3N4 박막의 증착)

  • Ahn S.;Kim D.W.;Kim J.H;Ahn S.J.;Kim Y.J.;Kim H.S.
    • Korean Journal of Materials Research
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    • v.14 no.6
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    • pp.402-406
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    • 2004
  • $WSi_2$, $TiSi_2$, $CoSi_2$, and $TaSi_2$ are general silicides used today in semiconductor devices. $WSi_2$ thin films have been proposed, studied and used recently in CMOS technology extensively to reduce sheet resistance of polysilicon and $n^{+}$ region. However, there are several serious problems encountered because $WSi_2$ is oxidized and forms a native oxide layer at the interface between $WSi_2$ and $Si_3$$N_4$. In this study, we have introduced 20 $slm-N_2$ gas from top to bottom of the furnace in order to control native oxide films between $WSi_2$ and $Si_3$$N_4$ film. In resulting SEM photographs, we have observed that the native oxide films at the surface of $WSi_2$ film are removed using the long injector system.

Synthesis of Cu-coated Ni-based Bulk Metallic Glass Powders by Gas Atomization and Spray Drying Process

  • Kim, Byoung-Kee;Kim, Yong-Jin;Kim, Jin-Chun
    • Proceedings of the Korean Powder Metallurgy Institute Conference
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    • 2006.09b
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    • pp.936-936
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    • 2006
  • Bulk amorphous materials have been intensively studied to apply for various advanced industry fields due to their high mechanical, chemical and electrical properties. These materials have been produced by several techniques such as mechanical alloying, melt spinning and gas atomization, etc. Among them, the atomization is the most potential technique for commercialization due to high cooling rate during solidification of the melt and mass productivity. However, the amorphous powders still have some limitations because of their low ductility and toughness. Therefore, intensive efforts have to be carried out to increase the ductility and toughness. In this study, the Ni-based amorphous powder was produced by the gas atomization process. And in order to increase the ductile toughness, ductile Cu phase was coated on the Ni amorphous powder by spray drying process. The characteristics of the as-synthesis powders have been examined and briefly mentioned. The master alloy with $Ni_{57}Zr_{20}Ti_{16}Si_2Sn_3$ was prepared by vacuum induction melting furnace with graphite crucible and mold. The atomization was conducted at $1450^{\circ}C$ under the vacuum of $10^{-2}$ torr. The gas pressure during atomization was varied from 35 to 50 bars. After making the Ni amorphous powders, the spray drying was processed to produce the Cu -coated Ni amorphous composite powder. The amorphous powder and Cu nitrate solution were mixed together with a small amount of binder and then it was sprayed at temperature of $130^{\circ}C$ and rotating speed of 15,000 R.P.M.

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The Study of the Dielectric and Piezoeletric Properties of 0.05Pb(AlS12/3TWS11/3T)OS13T-0.95Pb(ZrS10.52TTiS10.48T)OS13T System Modified with MnOS12T and FeS12TOS13T (MnO2, Fe2O3 첨가에 따른 0.05Pb(Al2/3W1/3)O3-0.95Pb(Zr0.52Ti0.48)O3계의 유전 및 압전 특성에 관한 연구)

  • 윤석진;오현재;정형진
    • The Transactions of the Korean Institute of Electrical Engineers
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    • v.41 no.5
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    • pp.508-516
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    • 1992
  • In this study, dielectric and piezoelectric properties of 0.05Pb(AlS12/3TWS11/3T)OS13T-0.95Pb(ZrS10.52TTiS10.48T)OS13T system ceramics were investigated with respect to the variations of MnOS12T and FeS12TOS13T additions amounts. The results obtained in this study are summarized as follows: 1. As the amounts of MnOS12T and FeS12TOS13T are increased, tetragonality(c/a) and apparent density were decreased but grain size was increased, also the limits of solubility were revealed because pores were formed at the amounts of 0.3wt% MnOS12T and 0.5wt% FeS12TOS13T. 2. AS the increasing of amounts of MnOS12T and FeS12TOS13T, the temperature of phase transition(TS1cT) was decreased, and pemeability had maximum value at the amount of 0.3wt% MnOS12T but were sharply decreasd for the increasing FeS12TOS13T amounts. 3. As the amounts of MnOS12T and FeS12TOS13T are increased, the electro-mechanical coupling factor(kS1pT) was decreased from 60% to 41%, 19% respectively, but mechanical quality factor(QS1mT) had maximum values 720 for amount of 0.3wt% MnOS12T and 320 the amount of 0.5wt% FeS12TOS13T.

Study on working gas ratio dependance of BST thin film (작업가스비에 따른 BST 박막의 특성)

  • Cui, Ming-Lu;Kwon, Hak-Yong;Park, In-Chul;Kim, Hong-Bae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07a
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    • pp.393-396
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    • 2004
  • 본 논문에서는 완충층용 MgO 박막을 P-type(100)Si 기판위에 작업가스 $Ar:O_2=80:20$, RF 파워 50W, 기판온도 $400^{\circ}C$, 10mtorr의 작업진공에서 $500{\AA}$ 증착하였다. 제작된 MgO/Si 기판위에 RF Magnetron sputtering법으로 작업가스 $Ar:O_2$의 비율을 90:10, 80:20, 70:30으로 변화하면서 $BST(Ba_{0.5}Sr_{0.5}TiO_3)$ 박막을 약 $2000{\AA}$ 증착하였다. XRD 측정결과 작업가스비의 변화에 관계없이(110)BST와 (111)BST 피크만이 관찰되었으며 작업가스 $Ar:O_2=80:20$에서 가장 양호한 결정성을 나타내었다. I-V 측정결과 인가전계 ${\pm}100kV/cm$에서 $10^{-7}A/cm^2$이하의 양호한 누설전류 특성을 보여주고 있으며 C-V 측정결과 작업가스 $Ar:O_2$의 비율 90:10, 80:20, 70:30에서의 비유전율은 각각 283, 305, 296으로서 작업가스비 80:20에서 제작된 박막의 특성이 가장 우수하였다. 작업가스비 80:20에서 제작된 박막의 SEM 측정결과 결정이 성장되었음을 확인할 수 있었고 그레인의 크기는 약 10nm였다.

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