• Journal of Sensor Science and Technology
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• v.23 no.4
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• pp.224-228
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• 2014

The electrocaloric effect of 9/65/35 PLZT thin film fabricated by the sol-gel method, which has not been studied yet, was investigated for its structural, electrical properties as well as temperature change property. The relaxor ferroelectric property of 9/65/35 PLZT thin film was confirmed by examining its dielectric and electrical properties. The relaxor property can cause a more pronounced electrocaloric effect (ECE) in a wider temperature range than normal ferroelectric film. To avoid errors caused by using an indirect measurement method, the leakage current generated by increasing temperatures was minimized by using the optimal maximum electric field ($350kVcm^{-1}$) in the thin film. The largest temperature change ${\delta}T$ (0.23 K) and the electrocaloric strength ${\xi}$ (0.68 mkcm/kV), calculated by equations were obtained. The maximum field change ${\delta}E$ ($191kVcm^{-1}$) was in the vicinity of the curie temperature ($200^{\circ}C$).

• Journal of Electrical Engineering and Technology
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• v.4 no.4
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• pp.527-530
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• 2009

$(Ba_{0.57}Sr_{0.33}Ca_{0.10})TiO_3$(=BSCT) powders, prepared by the sol-gel method, were doped using $MnCO_3$ as the acceptor and $Dy_2O_3$ as the donor. This powder was mixed with an organic vehicle. BSCT thick films were fabricated by the screen-printing techniques on the alumina substrate. The structural and dielectric properties of BSCT thick films were investigated with variation of the $Dy_2O_3$ amount. As a result of the differential thermal analysis (DTA), the exothermic peak was observed at around $670^{\circ}C$ due to the formation of the polycrystalline perovskite phase. All the BSCT thick films showed the XRD patterns of a typical polycrystalline perovskite structure. The average grain size of BSCT thick films decreased with an increasing amount of $Dy_2O_3$. The relative dielectric constant and dielectric loss of the BSCT thick film doped $Dy_2O_3$ 0.1mol% were 4637.4 and 1.6% at 1kHz, respectively.

• The Journal of Korean Academy of Prosthodontics
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• v.42 no.3
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• pp.301-306
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• 2004

Statement of problem. Fibronectin mediates its biological effects by binding to integrins on cell membranes through a consensus site including the Arg-Gly-Asp (RGD) sequence within tenth type III module. Purpose. The purpose of our study was to investigate the adsorption affinity of human recombinant fibronectin peptide (hFNIII 9-10) to titanium and to investigate the effect of the surrounding ionic composition on the adsorption process. Material and methods. As for evaluating the affinity of hFNIII 9-10 to Ti, titanium disks were incubated in 40, 80 and $120{\mu}g/ml$ hFNIII 9-10 solution at $37^{\circ}C$ overnight, repectively. As for evaluating the effect of surrounding ionic concentration, hFNIII 9-10 was dissolved in distilled water, phosphate buffered saline and RPMI 1640. Optical density (O.D.) was measured in ELISA reader. Results. The results were as follows; 1. The adsorption of hFNIII 9-10 showed significantly highest mean optical density (O.D.) value in $80{\mu}g/ml$. 2. The difference of ionic composition in DW, PBS and RPMI did not influence the adsorption amount of hFNIII 9-10.

• Journal of Technologic Dentistry
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• v.34 no.2
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• pp.67-73
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• 2012

연구 목적: 임플란트의 하부구조를 상부 구조와 연결하는 레진시멘트의 접착강도를 높이기 위한 기계적 화학적인 표면처리 방법들이 연구 되고 있다. 이 연구에서 다양한 크기의 $Al_2O_3$ sandblasting과 Silano Pen으로 표면처리한 티타늄과 레진 시멘트의 접착강도를 알아보고자 한다. 연구 방법: 12개의 티타늄(Ti-6A1-4V)시편을 디스크 형태로 제작하여 자가중합 수지에 매립하였다. 이들을 각각 6개의 군으로 나누어 $50{\mu}m$, $90{\mu}m$, $110{\mu}m$ 등 3가지 크기의 $Al_2O_3$로 sandblasting 하는 조건과 $Al_2O_3$로 sandblasting한 후 Silano Pen(Bredent, bredent GmbH &Co.KG, Senden, Germany)을 사용한 군으로 나누었다. 표면처리 한 티타늄 표면에 레진시멘트(Duolink dual syringe, Bisco, USA)으로 접착하였다. 그 후 증류수($37^{\circ}C$)에 24시간 보관 후 접착강도 실험을 시행하였고, SEM을 사용하여 표면처리 한 표면과 접착강도 실험 후 파절양상을 관찰하였다. 결과: 통계학적 분석에 따르면 Silano Pen을 사용하여 표면처리한 군들의 접착강도가 높았다(P<0.05). 결론: Silano Pen을 사용하는 것이 티타늄과 레진시멘트의 접착강도를 증가 시킨다.

• Korea-Australia Rheology Journal
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• v.18 no.1
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• pp.15-24
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• 2006

The first international inter-laboratory study, involving six laboratories, has been conducted to examine issues associated with yield stress measurements in suspensions. The initial focus of the project was to evaluate the reliability and reproducibility of several common yield stress measuring techniques employed in different laboratories and with different instruments. Aqueous suspensions of colloidal $TiO_2$ at concentrations of 40-70 wt% solids were used as the test fluids. A wide range of instruments and techniques employing both direct and indirect methods were used to determine the yield stress of the samples prepared according to a prescribed procedure. The results obtained indicated that although variations of results existed among different techniques, direct yield stress measurements using static methods produced more reliable and repeatable results than other methods. Variability of the yield stress measured using different techniques within any laboratory however was less significant than variability of the results among different laboratories. The nature and condition of the test suspensions was identified as the most likely factor responsible for the poor reproducibility of yield stress measurements from different laboratories.

• Journal of the Korean Society for Precision Engineering
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• v.19 no.10
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• pp.52-59
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• 2002

The thermo-mechanical characteristics of high temperature NITINOL shape memory alloy were evaluated using DSC with small samples and DMA with three-point bending specimens. The shape memory alloy of 54.4Ni/45.5Ti wt.% was used so that the phase transformation temperatures were in the range of 50~11$0^{\circ}C$. Two types of sample were tested in the experiments corresponding to as-received and annealed conditions. Simple beam bending theory was used to calculate the dynamic moduli of the shape memory alloy. According to the results, a large discrepancy in transformation temperatures was found between DSC and DMA techniques. Annealing treatment was found to suppress the R-phase transformation during cooling and the secondary plateau in the austenite transformation. Such a heat treatment was also significantly influenced to raise the transformation temperatures and the moduli of the shape memory alloy.

• Progress in Superconductivity and Cryogenics
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• v.18 no.1
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• pp.1-5
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• 2016

Field and temperature dependence of the critical current density, Jc, were measured for both un-doped and carbon doped $MgB_2/Nb/Monel$ wires manufactured by Hyper Tech Research, Inc. In particular, carbon incorporation into the $MgB_2$ structure using malic acid additive and a chemical solution method can be advantageous because of the highly uniform mixing between the carbon and boron powders. At 4.2 K and 10 T, Jc was estimated to be $25,000-25,300Acm^{-2}$ for the wire sintered at $600^{\circ}C$ for 4 hours. The irreversibility field, $B_{irr}$, of the malic acid doped wire was approximately 21.0 - 21.8 T, as obtained from a linear extrapolation of the J-B characteristic. Interestingly enough, the Jc of the malic acid doped sample exceeds $10^5Acm^{-2}$ at 6 T and 4.2 K, which is comparable to that of commercial Nb-Ti wires.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.7
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• pp.400-403
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• 2016

The resistive memory switching characteristics of resistive random access memory (ReRAM) using the amorphous GeSe thin film have been demonstrated at Al/Ti/GeSe/$n^+$ poly Si structure. This ReRAM indicated bipolar resistive memory switching characteristics. The generation and the recombination of chalcogen cations and anions were suitable to explain the bipolar switching operation. Space charge limited current (SCLC) model and Poole-Frenkel emission is applied to explain the formation of conductive filament in the amorphous GeSe thin film. The results showed characteristics of stable switching and excellent reliability. Through the annealing condition of $400^{\circ}C$, the possibility of low temperature process was established. Very low operation current level (set current: ~ ${\mu}A$, reset current: ~ nA) was showed the possibility of low power consumption. Particularly, $n^+$ poly Si based GeSe ReRAM could be applied directly to thin film transistor (TFT).

• Journal of Powder Materials
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• v.17 no.5
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• pp.404-408
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• 2010

The effects of high energy ball-milling (HEBM) on the sintering behavior and piezoelectric properties of 0.1 wt% $Li_2CO_3$ doped 0.8Pb($Mg_{1/3}Nb_{2/3}$)$O_3$-0.2Pb($Zr_{0.475}Ti_{0.525}$)$O_3$ (PMN-PZT) ceramics were investigated. It was found that HEBM treatment was quite effective to reduce the average particle size down to 300 nm, leading to increased density as well as enhanced piezoelectric properties of a sintered specimen even though prolonged HEBM resulted in unwanted secondary phases that caused a degradation of piezoelectric properties. The dielectric constant ($\varepsilon_r$), piezoelectric coupling factor ($k_p$) and piezoelectric constant $d_{33}$ of 0.1 wt% $Li_2CO_3$ doped PMN-PZT ceramics prepared via HEBM for 10 h reached 2040, 0.68 and 554 pC/N, respectively.

• Journal of Korean Society for Atmospheric Environment
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• v.20 no.3
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• pp.397-409
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• 2004

There has been few studies of either domestic or international to apply CCT-ICP-MS for the precise analysis of As and Cr components associated with airborne particulate matter. To date, the use of CCT-ICP-MS is strongly recommended for the accurate analysis of the toxic trace metals; this is because CCT-ICP-MS technique prevents polyatomic spectral interferences involved in the determination of As and/or Cr components. Taking advantage of CCT-ICP-MS technique, the measurements of about 20 metals were undertaken in this study. The standard reference material (NIST SRM 2783) was used for analytical quality control. To improve analytical accuracy and of acid efficiency, we selected nitric acid based on a test of three kinds of acid for microwave digestion method 1 ) nitric acid. 2) nitric acid and hydrogen peroxide. and 3) nitric acid and perchloric acid. When this method was employed, relative errors to SRM values of Al, As, Cr Fe, Mg, Mn, Pb, Sb, V, and Zn fell below 20%, while those or Ca, Si, and Ti were higher than 20%. The overall results of our study show that the concentrations of As and V determined by CCT-ICP-MS were satisfied with the certificated values within a relative error of 20e1c, whereas those determined by ICP-MS were 10 times higher than the certificated values.