• Title/Summary/Keyword: a-C:Ti

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CO Gas Sensing Characteristics of Nanostructured ZnO Thin Films (산화아연 나노구조 박막의 일산화탄소 가스 감지 특성)

  • Hung, Nguyen Le;Kim, Hyo-Jin;Kim, Do-Jin
    • Korean Journal of Materials Research
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    • v.20 no.5
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    • pp.235-240
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    • 2010
  • We investigated the carbon monoxide (CO) gas-sensing properties of nanostructured Al-doped zinc oxide thin films deposited on self-assembled Au nanodots (ZnO/Au thin films). The Al-doped ZnO thin film was deposited onto the structure by rf sputtering, resulting in a gas-sensing element comprising a ZnO-based active layer with an embedded Pt/Ti electrode covered by the self-assembled Au nanodots. Prior to the growth of the active ZnO layer, the Au nanodots were formed via annealing a thin Au layer with a thickness of 2 nm at a moderate temperature of $500^{\circ}C$. It was found that the ZnO/Au nanostructured thin film gas sensors showed a high maximum sensitivity to CO gas at $250^{\circ}C$ and a low CO detection limit of 5 ppm in dry air. Furthermore, the ZnO/Au thin film CO gas sensors exhibited fast response and recovery behaviors. The observed excellent CO gas-sensing properties of the nanostructured ZnO/Au thin films can be ascribed to the Au nanodots, acting as both a nucleation layer for the formation of the ZnO nanostructure and a catalyst in the CO surface reaction. These results suggest that the ZnO thin films deposited on self-assembled Au nanodots are promising for practical high-performance CO gas sensors.

An Experimental Study on the Micro Friction and Wear Characteristics of Organically Modified Hybrid Ceramic Materials by A Sol-Gel Process (졸-겔 공정에 의한 유기변성 하이브리드 세라믹 물질의 미세 마찰마모 특성)

  • Han, Hung-Gu;Kong, Ho-Sung;Yoon, Eui-Sung;Yang, Seung-Ho
    • Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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    • 2002.05a
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    • pp.215-225
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    • 2002
  • In order to enhance the thermal stability of binder materials of bonded type solid lubricants, several combinations of metal-alkoxide based sol-gel materials such as methyltrimethoxysilane(MTMOS), $titaniumisopropoxide(Ti(Opr^{j})_{4})$, $zirconiumisopropoxide(Zr(Opr^{j})_{4})$ and $aluminumbutoxide(Al(Obu^{t})_{4})$ were chemically modified by epoxy-, acrylic- and fluoro-silane compounds, respectively, in this work. Friction and wear characteristics of these hybrid ceramic materials were tested with a micro tribe-tester where a reciprocating steel ball slid on a test material, and the tribological property was also evaluated with respect to both heat-curing temperature and tile time. Test results generally showed that hybrid ceramic materials modified by epoxy-silane compounds had a low friction compared to others. And the higher heat-curing temperature and the longer heat treatment time resulted in the higher friction and the lower wear. IR spectroscopic analyses revealed that it was caused mainly by the increased metal oxide content in hybrid ceramics when the heat-curing temperature was over $320^{\circ}C$.

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Nonvolatile Memory and Photovoltaic Devices Using Nanoparticles

  • Kim, Eun Kyu;Lee, Dong Uk
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.79-79
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    • 2013
  • Quantum-structures with nanoparticles have been attractive for various electronic and photonic devices [1,2]. In recent, nonvolatile memories such as nano-floating gate memory (NFGM) and resistance random access memory (ReRAM) have been studied using silicides, metals, and metal oxides nanoparticles [3,4]. In this study, we fabricated nonvolatile memories with silicides (WSi2, Ti2Si, V2Si) and metal-oxide (Cu2O, Fe2O3, ZnO, SnO2, In2O3 and etc.) nanoparticles embedded in polyimide matrix, and photovoltaic device also with SiC nanoparticles. The capacitance-voltageand current-voltage data showed a threshold voltage shift as a function of write/erase voltage, which implies the carrier charging and discharging into the metal-oxide nanoparticles. We have investigated also the electrical properties of ReRAM consisted with the nanoparticles embedded in ZnO, SiO2, polyimide layer on the monolayered graphene. We will discuss what the current bistability of the nanoparticle ReRAM with monolayered graphene, which occurred as a result of fully functional operation of the nonvolatile memory device. A photovoltaic device structure with nanoparticles was fabricated and its optical properties were also studied by photoluminescence and UV-Vis absorption measurements. We will discuss a feasibility of nanoparticles to application of nonvolatile memories and photovoltaic devices.

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Internal Quality Evaluation and Age Identification of Fresh Korean Ginseng using Magnetic Resonance Imaging (자기공명영상을 이용한 수삼의 내부 품질평가 및 연근판정)

  • 임종국;김철수;이승조;김성민
    • Journal of Biosystems Engineering
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    • v.28 no.2
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    • pp.157-166
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    • 2003
  • The purpose of this study is to characterize the internal physical properties of fresh Korean ginsengs (Panax ginseng C.A. Meyer) through a magnetic resonance imaging (MRI) technique. Current external visual inspection cannot determine internal quality of ginsengs successfully. Relaxation time constants, T$_1$ and T$_2$*, were obtained from a series of MR images. Calculated Ti values were varied with different physiological states of ginseng tissues. Internal imaging information was obtained nondestructively from fresh ginsengs. One- and two-dimensional image analyses were performed. One-dimensional image analysis showed a potential of age identification of ginsengs rapidly. Internal quality of normal and abnormal ginsengs was evaluated using two-dimensional MR images. Various types of internal defects such as internal cavity and rotten spot were visualized clearly. The MRI technique had a feasibility to detect internal defects of fresh ginsengs effectively.

Fabrication and Characterization of Tunable Bandpass Filter using BST Thin Films

  • Kim, Il-Doo;Kim, Duk-Su;Park, Kyu-Sung;Kim, Ho-Gi
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07b
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    • pp.581-584
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    • 2002
  • In this work, a CPW resonator was designed and fabricated to investigate the basic microwave properties, such as effective dielectric constant, of BST thin films. Their properties were used as basic data to simulate and design CPW tunable bandpass filter. We also report on gold/$Ba_{0.5}Sr_{0.5}TiO_3$(BST) ferroelectric thin film C-band tunable bandpass filters(BPFs) designed and fabricated on magnesium oxide substrates using CPW structure. The 2 pole filter was designed for a center frequency of 5.88 GHz with a bandwidth of 9 %. The BST based CPW filter offers a high sensitivity parameter as well as a low loss parameter. The tuning range for the bandpass filter with CPW structure was determined to be 170 MHz.

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Angle-dependent modulation of the critical current of YBa$_2Cu_3O_7$ step-edge Josephson junctions on SrTiO$_3$ substrate (SrTio$_3$ 기판 위에 제작된 YBa$_2Cu_3O_7$ 계단형 모서리 조셉슨 접합의 각도에 따른 임계전류 특성)

  • Hwang, Yun-Seok;Moon, Sun-Kyung;Lee, Soon-Gul;Kim, Jin-Tae
    • 한국초전도학회:학술대회논문집
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    • v.9
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    • pp.83-86
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    • 1999
  • We have fabricated $_2Cu_3O_7$ step-edge junctions with different step orientations and studied their transition properties. Steps with different orientations were prepared on the substrate. Josephson junctions were made on a single substrate with step orientations ranging from 0$^{\circ}$ to 165$^{\circ}$ at 15$^{\circ}$ interval. We measured current-voltage characteristics, the critical current, and the superconducting transition temperature as a function of the angle. The critical current showed a modulation that has a maximum near 0$^{\circ}$ or 90$^{\circ}$ and a minimum near 45$^{\circ}$ and 135$^{\circ}$. We believe that the critical current modulation with the step orientation could be associated with the symmetry of high T$_c$ superconductor.

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Rediscovery of a Broad Array of Lewis Acids for Living Cationic Polymerization in the Presence of an Added Base

  • Kanaoka, Shokyoku;Kanazawa, Arihiro;Aoshima, Sadahito
    • Proceedings of the Polymer Society of Korea Conference
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    • 2006.10a
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    • pp.325-325
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    • 2006
  • Cationic polymerization of isobutyl vinyl ether using various metal halides was examined in toluene in the presence of an added base at $0^{\circ}C$. In conjunction with an appropriate weak base such as ethyl acetate or 1,4-dioxane, all metal halides but $FeBr_{3}\;and\;GaCl_{3}$ led to living cationic polymerization. The polymerization rates varied as follows: $FeBr_{3},\;GaCl_{3}\;>\;FeCl_{3}\;>\;SnCl_{4}\;>\;InCl_{3}\;>\;ZnCl_{2}\;>>\;AlCl_{3},\;HfCl_{4},\;ZrCl_{4}\;>\;EtAlCl_{2},\;BiCl_{3},\;TiCl4\;>>\;SiCl_{4}\;>\;GeCl_{4}$. This order partially corresponds to that of the equilibrium constant in the formation of a carbocation from a chloroalkane in the presence of a carbonyl compound. With extremely active Lewis acids, such as $FeBr_{3}\;and\;GaCl_{3}$, the use of a stronger base, THF, was required to achieve living polymerization.

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RF Integrated Electromagnetic-Noise Filters Incorporated with Nano-granular Co41Fe38AI13O8 Soft Magnetic Thin Films on Coplanar Transmission Line

  • Sohn, Jae-Cheon;Yamaguchi Masahiro;Lim, Sang-Ho;Han, Suk-Hee
    • Journal of Magnetics
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    • v.10 no.4
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    • pp.163-170
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    • 2005
  • The RF integrated noise filters are fabricated by photolithography. The stack for the electromagnetic noise filters consists of the nano-granular ($Co_{41}Fe_{38}AI_{13}O_8$) soft magnetic film / $SiO_2$ / Cu transmission line / seed layer (Cu/Ti) / $SiO_2$-substrate. A good signal-attenuation feature along with a low signal-reflection feature is observed in the present filters. Especially in the noise filter incorporated with a $Co_{41}Fe_{38}AI_{13}O_8$ magnetic film with lateral dimensions of $2000{\mu}m$ wide, 15 mm long and $1{\mu}m$ thick, the maximum magnitude of signal attenuation reaches -55 dB, and the magnitude of signal reflection is below -10 dB in the overall frequency range. And this level of signal attenuation is much larger than that of a noise filter incorporated with a Fe magnetic film.

Impact of Solution-Processed BCP Buffer Layer on Efficient Perovskite Solar Cells (페로브스카이트 태양전지에서의 저온 용액 공정의 BCP 버퍼층 효과)

  • Jung, Minsu;Choi, In Woo;Kim, Dong Suk
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.34 no.1
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    • pp.73-77
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    • 2021
  • Inorganic-organic hybrid perovskite solar cells have demonstrated considerable improvements, reaching 25.5% of certified power conversion efficiency in 2020 from 3.8% in 2009. In normal structured perovskite solar cells, TiO2 electron-transporting materials require heat treatment process at a high temperature over 450℃ to induce crystallinity. Inverted perovskite solar cells have also been studied to exclude the additional thermal process by using [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) as a non-oxide electron-transporting layer. However, the drawback of the PCBM layer is a charge accumulation at the interface between PCBM and a metal electrode. The impact of bathocuproin (BCP) buffer layer on photovoltaic performance has been investigated herein to solve the problem of PCBM. 2-mM BCP-modified perovskite solar cells were observed to exhibit a maximum efficiency of 12.03% compared with BCP-free counterparts (5.82%) due to the suppression of the charge accumulation at the PCBM-Au interface and the resulting reduction of the charge recombination between perovskite and the PCBM layer.

Pyroelectric Peyformance Evaluation of Pure PZT and Alternately Deposited PZT/PT Thin Films (PZT 순수박막과 PZT/PT 교차박막의 적외선 감지 특성 비교)

  • Ko, Jong-Soo;Kwak, Byung-Man
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.26 no.6
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    • pp.1001-1007
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    • 2002
  • To improve the performance of the PZT thin flms, each PZT and PT layer was alternately deposited on a Pt/Ti/Si$_3$N$_4$/SiO$_2$/Si substrate by a modified sol-gel solid precursor technique. For comparison, PZT thin films were also prepared with an identical method under the same conditions. XRD measurement revealed that the diffraction pattern of the multilayer film was due to the superimposition of the PZT and PT patterns. At 1㎑, a dielectric constant of 389 and 558, a dielectric loss of 1.2% and 1.1% were obtained for the PZT/PT and PZT thin films, respectively. If we consider the PT dielectric constant to be 260, it is clear that the dielectric constant of alternately deposited PZT/PT thin films was well adjusted. The PZT/PT thin film showed a low dielectric constant and a similar dielectric loss compared with those of the PZT film. The figures of merit on detectivity for the PZT/PT and PZT thin films were 20.3$\times$10$\^$-6/㎩$\^$-$\sfrac{1}{2}$/, and 18.7$\times$10$\^$-6/㎩$\^$-$\sfrac{1}{2}$/, and the figures of merit on voltage response were 0.038㎡/C and 0.028 ㎡/C, respectively. The high figures of merit for the PZT/PT film were ascribed to its relatively low dielectric constant when compared to the PZT thin films.