• Title/Summary/Keyword: a-C:Ti

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Kinetic model for the coarsening of complex particle in weld HAZ (용접 열영향부에서의 복합 석출물의 조대화 거동 예측 모델)

  • Mun, Jun-O;Kim, Sang-Hun;Lee, Chang-Hui;Jeong, Hong-Cheol;Lee, Jong-Bong
    • Proceedings of the KWS Conference
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    • 2005.11a
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    • pp.201-203
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    • 2005
  • A kinetic model for particle coarsening behavior in the weld heat affected zone (HAZ) was proposed. Unlike the conventional approach, where the mean-sized particle is considered to grow continuously, the proposed model considered the critical particle size which can be derived from the Gibbs-Thomson equation. In this study, the proposed particle coarsening model was applied to study the behavior of (Ti, Nb )(C, N) complex particle in the weld HAZ. The predicted particle size distributions using the proposed model were in agreement with the experimental results.

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Processing of gelatin using nanosecond and femtosecond pulsed lasers (나노초 및 펨토초 레이저를 이용한 젤라틴의 미세가공)

  • Seo, C.;Ahn, D.;Kim, D.
    • Laser Solutions
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    • v.15 no.2
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    • pp.1-5
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    • 2012
  • Gelatin is used as a model for soft biological tissues in studying laser interaction with the soft tissues. In this work, we analyze the interaction between gelatin and excimer and Ti:Sapphire femtosecond laser under various conditions, especially by varying the laser, laser fluence and pulse number. The results show that swelling of the surface and ablation depth can be controlled by adjusting the process parameters.

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Preparation and Characterization of Insoluble Anodes for Electrodeposition of Ni-W Alloys in Ammoniacal Citrate Bath (Ni-W 합금도금용 불용성 양극의 제조 및 특성 연구)

  • 장도연;강성군
    • Journal of the Korean institute of surface engineering
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    • v.32 no.6
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    • pp.686-694
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    • 1999
  • Insoluble anodes of the Ta/Ir mixed metal oxide for electrodeposition of Ni-W alloy in ammoniacal citrate bath were prepared by thermal decomposition method. Ti plate was etched in boiling oxalic acid solution and coated with ethanol solution of $TaCl_{5}$ and $IrCl_4$ mixed in a fixed ratio, followed by drying and treating at various temperatures. The coating layer of these insoluble anode was characterized by SEM, EDX, XRD and DSC. The decomposition rate of citric acid in plating bath was determined by measuring the $CO_2$ gas evolved at the anodes with Gas Chromatography. Evolution of $CO_2$ gas from Ta/Ir oxide anodes decreased about 5% compared with that of Pt. The $CO_2$ gas evolution was increased with the amount of Ir-oxide in the coatings. The coatings which have more than 40% ratio of Ta content and heat-treated at the temperature higher than $400^{\circ}C$ showed better efficiency

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A Study on the Development of Thin Film Type Humidity Sensor Materials by Sol-Gel Method(II) (졸겔법에 의한 박막형 습도센서 소제개발에 관한 연구(II))

  • You, D.H.;Kang, D.H.;Na, D.K.;Hwang, M.W.;Yuk, J.H.;Lee, D.C.
    • Proceedings of the KIEE Conference
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    • 1994.07b
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    • pp.1472-1474
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    • 1994
  • In this paper, $TiO_2-V_2O_5$ thin films are fabricated by Sol-Gel method and their humidity-sensing characteristics have been investigated. The microstructure of specimen is porous. The humidity-sensing characteristics of thin films are good according to increasing heat treatment temperature and decreasing measurement frequency.

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High Toughness Silicon Nitride Material in Machining of Compacted Graphite Iron

  • Park, Kwon-Hee;Lee, Kern-Woo;Lee, Joo-Wan;Sharon, Moshe
    • Proceedings of the Korean Powder Metallurgy Institute Conference
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    • 2006.09b
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    • pp.861-862
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    • 2006
  • The suitable tools for CGI material has not been developed yet because of high hardness, high toughness and very low machininability compared to the grey cast iron. And the tool life has been decreased as the contents of Ti in CGI material. From this research, we were able to do the high speed machining by using high toughness silicon nitride ceramic tools. The silicon nitride ceramic tool grade was specially designed and prepared with microstructure of elongated grains with higher aspect ratio (c/a) than conventional one.

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High Dose $^{60}Co\;{\gamma}$-Ray Irradiation of W/GaN Schottky Diodes

  • Kim, Jihyun;Ren, F.;Schoenfeld, D.;Pearton, S.J.;Baca, A.G.;Briggs, R.D.
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.4 no.2
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    • pp.124-127
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    • 2004
  • W/n-GaN Schottky diodes were irradiated with $^{60}Co\;{\gamma}-rays$ to doses up to 315Mrad. The barrier height obtained from current-voltage (I-V) measurements showed minimal change from its estimated initial value of ${\sim}0.4eV$ over this dose range, though both forward and reverse I-V characteristics show evidence of defect center introduction at doses as low as 150 Mrad. Post irradiation annealing at $500^{\circ}C$ increased the reverse leakage current, suggesting migration and complexing of defects. The W/GaN interface is stable to high dose of ${\gamma}-rays$, but Au/Ti overlayers employed for reducing contact sheet resistance suffer from adhesion problems at the highest doses.

The Seeding Effects on the Phase Transformation of Sol-Gel Derived PZT Powder

  • Lee, Hyun-Tae;Lee, Wan-In;Kim, Yoo-Hang;Whang, Chin-Myung
    • Bulletin of the Korean Chemical Society
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    • v.23 no.8
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    • pp.1078-1084
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    • 2002
  • The formation temperature for the perovskite lead zirconate titanate [Pb(Zr,Ti)O3, PZT] derived from sol-gel route was lowered by more than $100^{\circ}C$ with the addition of crystallographically suitable seed particles, such as barium titanat e (BT) or PZT. We investigated the effect of seeding on the crystallization of perovskite phase and in the microstructure of the sol-gel derived PZT powder by varying the concentration, size and chemical species of seed particles. The phase transition as a function of temperature was monitored by DTA, XRD, and Raman spectroscopy, and the interface between the seed particle and grown PZT layer was analyzed by SEM and high resolution TEM techniques. It was found that both the heterogeneous and homogeneous nucleation contributes competitively in the formation of perovskite PZT grains.

Si Micromachining for MEMS-lR Sensor Application (결정의존성 식각/기판접합을 이용한 MEMS용 구조물의 제작)

  • 박흥우;주병권;박윤권;박정호;김철주;염상섭;서상의;오명환
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1998.06a
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    • pp.411-414
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    • 1998
  • In this paper, the silicon-nitride membrane structure for IR sensor was fabricated through the etching and the direct bonding. The PT layer as a IR detection layer was deposited on the membrane and its characteristics were measured. The attack of PT layer during the etching of silicon wafer as well as the thermal isolation of the IR detection layer can be solved through the method of bonding/etching of silicon wafer. Because the PT layer of c-axial orientation rained thermal polarization without polling, the more integration capability can be achieved. The surface roughness of the membrane was measured by AFM, the micro voids and the non-contacted area were inspected by IR detector, and the bonding interface was observed by SEM. The polarization characteristics and the dielectric characteristics of the PT layer were measured, too.

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Fabrication of Nanocrystalline FeCoTaN Magnetic Films Having High Saturation Magnetization and Excellent High Frequency Characteristics (고 포화 자화 및 우수한 고주파 특성을 가진 나노결정 FeCoTaN 박막의 제조)

  • J. M. Shin;Kim, J.;Kim, Y. M.;S. H. Han;Kim, H. J.
    • Proceedings of the Korean Magnestics Society Conference
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    • 2002.12a
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    • pp.214-215
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    • 2002
  • High saturation magnetization (B$\_$s/) and excellent high frequency characteristics of magnetic thin films has been recognized as the most important requirement for further miniaturization and higher frequency operation in magnetic devices, such as magnetic heads and magnetic sensors. Up to now, Fe-X-N (X =Ti, Hf, and Al etc.) films with B$\_$s/ of 15 ∼ 19 kG and coercivity (H$\_$c/) of 0.5 ∼ 5.0 Oe have been successfully fabricated and proven to satisfy various requirements as a potential candidate for thin film head materials. (omitted)

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A study on the Etching and electrical Properties of PZT Thin Films (PZT(53/47) 박막의 식각 및 전기적 특성에 관한 연구)

  • 김경태;이성갑;이영희;김창일
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.39-42
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    • 2000
  • The effect of excess Pb contents on the etching of PZT thin films and their electrical properties has been investigated. Ferroelectric PZT(53/47) thin films were prepared by the metal alkoxide-based Sol-Gel method, in which they were spin-coating on P7Ti/Si02/Si substrate using the PZT(53/47) stock solutions with various excess Pb contents. Etching of PZT film was performed using planar inductively coupled Ar/Cl$_2$/BCl$_3$ plasma. The etch rate of PZT film was 2450 $\AA$/min at Ar(20)/BCl$_3$(80) gas mixing ratio and substrate temperature of 8$0^{\circ}C$.

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