• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.07a
• /
• pp.747-750
• /
• 2000

In this work, we investigated the dependence of optical and electrical properties of amorphous hydrogenated SiC (a-SiC:H) films on annealing temperature(T$\sub$a/). The a-SiC:H films were deposited by PECVD(plasma enhanced vapor deposition) on coming glass, p-type Si(100) wafer using SiH$_4$+CH$_4$+N$_2$gas mixture. The experimental results have shown that the optical energy band gap(E$\sub$g/) of the a-SiC thin films unchanged in the range of T$\sub$a/ from 400$^{\circ}C$ to 600$^{\circ}C$. The Raman spectrum of the thin films, annealed at high temperatures, has shown that graphitization of carbon clusters and micro-crystalline silicon occurs. The current-voltage characteristics have shown good electrical properties at the annealed films.

• Journal of the Korean institute of surface engineering
• /
• v.29 no.6
• /
• pp.797-802
• /
• 1996

Hydrogenated amorphous silicon carbide (a-SiC:H) films have been deposited on unheated substrates by low frequency (50Hz) plasma using $SiH_4+CH_4+H_2$ gas mixtures. Deposition rate, refractive index, optical band gap, Vickers hardness and IR spectrum of the deposited a -SiC:H films have been measured for various rations of gas flow rates k(=$CH_4/SiH_4$, 0.5k4) with a constant $H_2$ flow rate (100sccm). As k increases, the deposition rate of the a-SiC:H films increases up to the maximum value of about 220nm/h at k=2.5, and then it decreases. The refractive index of the films was 2.6 for k=2.5, while the optical band gap of the films was 3.3eV for k=2.2. The maximum value of Vickers hardness of the films was 1500Hv at k=1. The infrared transmission measurement shows that the films contain both Si-C and Si-$CH_3$ bonds.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.17 no.3
• /
• pp.278-282
• /
• 2004

The Hydrogenated amorphous carbon(a-C:H) thin films are deposited on silicon with a close field unbalanced magnetron(CFUBM) sputtering systems. The experimental data are obtained on the depositon rate and physical properties of a-C:H films using DC bias voltage and Ar/C$_2$H$_2$ pressure. The depostion rate and the surface roughness decrease with DC bias voltage, but the hardness of the thin films increases with DC bias voltage. And the position of G-peak moves to lower wavenumber indicating an increase in diamond-like carbon characteristics with the lower Ar/C$_2$H$_2$ pressure.

• Journal of the Korean institute of surface engineering
• /
• v.48 no.3
• /
• pp.126-130
• /
• 2015

A high-pressure depletion method using plasma chemical vapor deposition (CVD) is often used to deposit hydrogenated microcrystalline silicon (${\mu}c-Si:H$) films of a low defect density at a high deposition rate. To understand proper deposition conditions of ${\mu}c-Si:H$ films for a high-pressure depletion method, Si films were deposited in a combinatorial way using a multi-hollow discharge plasma CVD method. In this paper the substrate temperature dependence of ${\mu}c-Si:H$ film properties are demonstrated. The higher substrate temperature brings about the higher deposition rate, and the process window of device quality ${\mu}c-Si:H$ films becomes wider until $200^{\circ}C$. This is attributed to competitive reactions between Si etching by H atoms and Si deposition.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.13 no.10
• /
• pp.817-821
• /
• 2000

In this work, we have investigated the dependence of annealing temperature(T$\_$a/) on optical and electrical properties of amorphous hydrogenated SiC(a-SiC:H) films. The a-SiC:H films were deposited on corning glass and p-type Si(100) wafer by PECVD (plasma enhanced vapor deposition) using SiH$_4$+CH$_4$+N$_2$ gas mixture. The experimental results have shown that the optical energy band gap(E$\_$opt/)of the thin films annealed at high temperatures have shown that the graphitization of carbon clusters and micro-crystalline silicon occurs. The current-voltage characteristics have shown good electrical properties at the annealed films.

• Journal of the Korean Vacuum Society
• /
• v.13 no.2
• /
• pp.65-71
• /
• 2004

ESR spectrum change has been investigated for the PECVD deposited a-C : H films exposed in the atmosphere. Though depending on the deposition conditions, it was observed that generally ESR signal height decreased and linewidth increased as the exposure time increased. The spin density decreased down to 40-80% depending on samples. The decrease of spin density of the a-C : H films in the air was attributed to permeation of moisture into the films and subsequent migration and redistribution of hydrogens. And the ESR signal height increased again and the linewidth decreased when the a-C : H samples were placed again in the vacuum, which was attributed to oxygens extracted from the samples. Consequently, the ESR spectrum change for the a-C : H films exposed in the air was regarded to be associated with the decrease of spin density as well as the permeation of oxygens into films.

• Journal of the Korean institute of surface engineering
• /
• v.39 no.3
• /
• pp.87-92
• /
• 2006

The characteristic of interface layer and the effect of bias voltage on the microstructure of c-BN films were studied in the microwave plasma hot filament C.V.D process. c-BN films were deposited on a high speed steel(SKH-51) substrate by hot filament CVD technique assisted with a microwave plasma to develop a high performance of resistance coating tool. c-BN films were obtained at a gas pressure of 20 Torr, vias voltage of 300 V and substrate temperature of $800^{\circ}C$ in $B_2H_6-NH_3-H_2$ gas system. It was found that a thin layer of hexagonal boron nitride(h-BN) phase exists at the interface between c-BN layer and substrate.

• Journal of the Korean institute of surface engineering
• /
• v.36 no.5
• /
• pp.357-363
• /
• 2003

The aim of this work is the synthesis of a-C:H films from methane gas using surface spark discharge at the atmospheric pressure. Properties of these films have been investigated as functions of energy W delivered per a methane molecule in the discharge. The method enables the coatings to be deposited with high growth rates (up to $100 \mu\textrm{m}$/hour) onto large-area substrates. It is shown that the films consist of spherical granules with diameter of 20∼50 nm formed in the spark channel and then deposited onto the substrate. The best film characteristics such as minimum hydrogen-to-carbon atoms ratio H/C=0.69, maximum hardness $H_{v}$ =3 ㎬, the most dense packing of the granules and highest scratch resistance has been obtained under the condition of highest energy W of 40 eV. The deposited a-C:H coatings were found to be more soft and hydrogenated compared to the diamond-like hydrogenated (a-C:H) films which obtained by traditional plasmaenhanced chemical vapor deposition methods at low pressure (＜10 Torr). Nevertheless, these coatings can be potentially used for scratch protection of soft plastic materials since they are of an order harder than plastics but still transparent (the absorption coefficient is about $10^4$∼$10^{5}$ $m^{-1}$ At the same time the proposed method for fast deposition of a-C:H films makes this process less expensive compared to the conventional techniques. This advantage can widen the application field of. these films substantially.y.

• Journal of the Korean Vacuum Society
• /
• v.9 no.4
• /
• pp.382-388
• /
• 2000

Hydrogenated amorphous carbon (a-C:H) films were fabricated by electron cyclotron resonance plasma-enhanced chemical vapor deposition. The bonding structure of carbon and hydrogen in the a-C:H films has been investigated by varying the deposition conditions such as ECR power, gas composition of methane and hydrogen, deposition time, and negative DC self bias voltage. The bonding characteristics of the a-C:H thin film were analyzed using FTIR spectroscopy. The IR absorption peaks of the film were observed in the range of $2800\sim3000 \textrm{cm}^{-1}$. The atomic bonding structure of a-C:H film consisted of $sp^3$ and $sp^2$ bonding, most of which is composed of $sp^3$ bonding. The structure of the a-C:H films changed from $CH_3$ bonding to $CH_2$ or CH bonding as deposition time increased. We also found that the amount of dehydrogenation in a-C:H films was increased as the bias voltage increased.

• Journal of Korean Ophthalmic Optics Society
• /
• v.5 no.2
• /
• pp.193-199
• /
• 2000

The a-C : H films have been grown on the glass substrate by PECVD method, where plasma was generated with a 60 Hz line power source. The growth rate of films is found to be dependent of the partial pressure of $C_2H_2$. This growth rate is a little higher than that in which $CH_4$ instead of $C_2H_2$ is used. The transmittance is also much higher(95%). The optical energy gap of films is in the range of 1.4~1.8eV depending on the partial pressure of $C_2H_2$. However, this energy gap, which is 1.8eV, is found to be independent of the partial pressure of $C_2H_2$ for the thick films above $2000{\AA}$. The carbonization is checked from peak intensities of D ($sp^3$) and G($sp^2$) peaks in Roman spectra. The hydronization and C-H bonding status in films can also be determined from FTIR results. Both the bonding strength of C-H and the ratio of $sp^3$ to $sp^2$ in bonding are found to be slightly dependent of partial pressure of $C_2H_2$. Judging from above results, we can conclude that the best value for partial pressure of $C_2H_2$ in growing process of thick films is about 13.8%.