• Kyungpook Mathematical Journal
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• v.48 no.4
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• pp.529-543
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• 2008

It is shown that every almost linear mapping h : $A{\rightarrow}B$ of a unital PoissonC*-algebra A to a unital Poisson C*-algebra B is a Poisson C*-algebra homomorph when $h(2^nuy)\;=\;h(2^nu)h(y)$ or $h(3^nuy)\;=\;h(3^nu)h(y)$ for all $y\;\in\;A$, all unitary elements $u\;\in\;A$ and n = 0, 1, 2,$\codts$, and that every almost linear almost multiplicative mapping h : $A{\rightarrow}B$ is a Poisson C*-algebra homomorphism when h(2x) = 2h(x) or h(3x) = 3h(x for all $x\;\in\;A$. Here the numbers 2, 3 depend on the functional equations given in the almost linear mappings or in the almost linear almost multiplicative mappings. We prove the Cauchy-Rassias stability of Poisson C*-algebra homomorphisms in unital Poisson C*-algebras, and of homomorphisms in Poisson Banach modules over a unital Poisson C*-algebra.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.322.1-322.1
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• 2014

Many research groups have studied tandem or multi-junction cells to overcome this low efficiency and degradation. In multi-junction cells, band-gap engineering of each absorb layer is needed to absorb the light at various wavelengths efficiently. Various absorption layers can be formed using multi-junctions, such as hydrogenated amorphous silicon carbide (a-SiC:H), amorphous silicon germanium (a-SiGe:H) and microcrystalline silicon (${\mu}c$-Si:H), etc. Among them, ${\mu}c$-Si:H is the bottom absorber material because it has a low band-gap and does not exhibit light-induced degradation like amorphous silicon. Nevertheless, ${\mu}c$-Si:H requires a much thicker material (>2 mm) to absorb sufficient light due to its smaller light absorption coefficient, highlighting the need for a high growth rate for productivity. ${\mu}c$-SiGe:H has a much higher absorption coefficient than ${\mu}c$-Si:H at the low energy wavelength, meaning that the thickness of the absorption layer can be decreased to less than half that of ${\mu}c$-Si:H. ${\mu}c$-SiGe:H films were prepared using 40 MHz very high frequency PECVD method at 1 Torr. SiH4 and GeH4 were used as a reactive gas and H2 was used as a dilution gas. In this study, the ${\mu}c$-SiGe:H layer for triple solar cells applications was performed to optimize the film properties.

• Korean Journal of Crystallography
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• v.11 no.1
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• pp.46-51
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• 2000

The molecular structures of 2-SC₄H₃CH=NN(H)C/sub 6/H/sub 5/(C/sub 11/H/sub 10/N₂S) and (GaMe₂)₂(2-SC₄H₃CH=NNC/sub 6/H/sub 5/)₂(C/sub 26/H/sub 30/Ga₂N₄S₂) have been determined by X-ray diffraction. Crystallographic data for 2-SC₄H₃CH=NN(H)C/sub 6/H/sub 5/:orthorhombic space group P2₁2₁2₁, a=6.108(1)Å, b=7.593(1)Å, c=22.356(2)Å, V=1037.1(3)ų, Z=4, R=0.0613. Crystallographic data for (GaMe₂)₂(2-SC₄H₃CH=NNC/sub 6/H/sub 5/)₂:monoclinic space group P2₁/n, a=15.996(2) Å, c=9.879(3)Å, β=100.07.(2)°, V=2764.599)ų, Z=4, R=0.0503.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.6
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• pp.441-445
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• 2013

ZnO nanowires on the a-, c- and m-plane oriented 4H-SiC substrates were grown by using a high temperature tube furnace. Ti/Au electrodes were deposited on ZnO nanowires and a-, c- and m-plane 4H-SiC substrates, respectively. The shape and density of the ZnO nanowires were investigated by field emission scanning electron microscope. It was found that the growth direction of nanowires depends strongly on growth parameters such as growth temperature and pressure. In this work, The sensitivity of nanowires formed a-, c- and m-plane oriented 4H-SiC gas sensor was measured at $300^{\circ}C$ with CO gas concentration of 80%. The nanowires grown on a-plane oriented 4H-SiC show improved sensing performance than those on c- and m-plane oriented 4H-SiC due to the increased density of nanowire on a-plane 4H-SiC.

• Bulletin of the Korean Chemical Society
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• v.17 no.9
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• pp.802-807
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• 1996

Second-order rate constants have been measured spectrophotometrically for the reactions of aryl benzoates (X-C6H4CO2C6H4-Y) with EtO-, Z-C6H4O- and Z-C6H4C(Me)=NO- in absolute ethanol at 25.0 ℃. All the reactions have been performed in the presence of excess 18-crown-6 ether in order to eliminate the catalytic effect shown by alkali metal ion. A good Hammett correlation has been obtained with a large ρ- value (-1.96) when σ- (Z) constant was used for the reaction of p-nitrophenyl benzoate (PNPB) with Z-C6H4O-. Surprisingly, the one for the reaction of PNPB with Z-C6H4C(Me)=NO- gives a small but definitely positive ρ- value (＋0.09). However, for reactions of C6H5CO2C6H4-Y with EtO-, correlation of log k with σ- (Y) constant gives very poor Hammett correlation. A significantly improved linearity has been obtained when σ0 (Y) constant was used, indicating that the leaving group departure is little advanced at the TS of the RDS. For reactions of X-C6H4CO2C6H4-4-NO2 with EtO-, C6H5O- and C6H5C(Me)=NO-, correlations of log k with σ (X) constants for all the three nucleophile systems give good linearity with large positive ρ values, e.g. 2.95, 2.81 and 3.06 for EtO-, C6H5O- and C6H5C(Me)=NO-, respectively. The large ρ values clearly suggest that the present reaction proceeds via a stepwise mechanism in which the formation of the addition intermediate is the RDS.

• 한국신재생에너지학회:학술대회논문집
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• 2006.06a
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• pp.228-231
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• 2006

This paper briefly introduces silicon based thin film solar cells: amorphous (a-Si:H), microcrystalline ${\mu}c-Si:H$ single junction and $a-Si:H/{\mu}c-Si:H$ tandem solar cells. The major difference of a-Si:H and ${\mu}c-Si:H$ cells comes from electro-optical properties of intrinsic Si-films (active layer) that absorb incident photon and generate electron-hole pairs. The a-Si:H film has energy band-gap (Eg) of 1.7-1.8eV and solar cells incorporating this wide Eg a-Si:H material as active layer commonly give high voltage and low current, when illuminated, compared to ${\mu}c-Si:H$ solar cells that employ low Eg (1.1eV) material. This Eg difference of two materials make possible tandem configuration in order to effectively use incident photon energy. The $a-Si:H/{\mu}c-Si:H$ tandem solar cells, therefore, have a great potential for low cost photovoltaic device by its various advantages such as low material cost by thin-film structure on low cost substrate instead of expensive c-Si wafer and high conversion efficiency by tandem structure. In this paper, the structure, process and operation properties of Si-based thin-film solar cells are discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.91-91
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• 2000

a-C:H 혹은 a-SiC:H 박막은 광전소자 및 태양전지 등의 개발에 있어서 중요한 물질이다. 우리는 a-C:H 및 a-SiC:H 박막을 PECVD (plasma-enhanced chemical vapor deposition) 방법으로 증착시키고, 박막의 가열에 따른 스핀밀도의 변화를 ESR (electron spin resonance) 측정을 통하여 조사하였다. PECVD 증착가스는 Ch4, SiH4 가스를 사용하였고, 기판은 Corning 1737glass를 사용하였으며, 기판 온도는 300-40$0^{\circ}C$, 증착 압력은 0.1-0.3 Torr, r.f. 전력은 3-36W 사이에서 변화되었다. ESR 측정은 상온 X-band 영역에서 수행되었고, modulation amplitude는 2.5G, modulation frequency는 100kHz 이었다. a-C:H 혹은 a-SiC:H 박막은 진공상태의 reactor, 혹은 공기중의 furnace 안에서 300-50$0^{\circ}C$ 영역에서 3-8시간 정도 가열되거나, 혹은 상온에서 약 50$0^{\circ}C$ 정도까지 단계적으로 가열되었다. 증착된 a-C:H 박막의 초기 구조는 Raman 측정으로부터 polymer-like Carbon으로 추정되었으며, 300-35$0^{\circ}C$ 가열시 초기 1시간 정도 사이에는 스핀밀도가 증가되었으나, 그 후 8시간 정도까지의 가열의 경우에도 대체로 동일하게 나타났다. 또한 상온으로부터 약 50$0^{\circ}C$까지 단계적으로 온도를 높여주며, 각 단계마다 1시간씩 가열했을 때도 30$0^{\circ}C$ 정도까지는 스핀밀도가 증가하다가 더 높은 온도로 가면서 다시 스핀밀도가 감소함을 볼 수 있었다. 이러한 스핀밀도의 초기 증가 및 감소를 일으키는 메카니즘에 대해서 논의해 볼 것이다.

• Bulletin of the Korean Chemical Society
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• v.23 no.7
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• pp.953-956
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• 2002

Excess molar volumes (Vm E ) of binary liquid mixtures: xC6H5CH3 + (1-x1)CH3CN or + (1-x1)C6H5NO2, or + (1-x1)C2H5NO2 have been determined as a function of mole fraction of C6H5CH3 (x) at a temperature of 303.15 K over a entire range of composition. The densities of the binary liquid mixtures were determined by pycnometrically. The VmE values of the mixtures have been found to be negative over the whole composition in order of C6H5CH3 + C6H5NO2, < C6H5CH3 + CH3CN, and < C6H5CH3 + C2H5NO2. The negative magnitude of VmE suggests the presence of intermolecular interaction in the three binary liquid mixtures.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.11
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• pp.70-77
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• 1998

Ni/SiC Schottky diodes have been fabricated using epitaxial 4H-SiC and 6H-SiC wafers. The epitaxial n-type layers were grown on $n^{+}$ substrates, with a doping density of 4.0$\times$10$^{16}$ c $m^{-3}$ and a thickness of 10${\mu}{\textrm}{m}$. Oxide-termination has been adopted in order to obtain high breakdown voltage and low leakage current. The fabricated Ni/4H-SiC and Ni/6H-SiC Schottky barrier diodes show excellent rectifying characteristics up to the measured temperature range of 55$0^{\circ}C$. In case of oxide-terminated Schottky barrier diodes, breakdown voltage of 973V(Ni/4H-SiC) and 920V(Ni/6H-SiC), and a very low leakage current of less than 1nA at -800V has been observed at room temperature. On non-terminated Schottky barrier diodes, breakdown voltages were 430V(Ni/4H-SiC) and 160v(Ni/6H-SiC). At room temperature, SBH(Schottky Barrier Height), ideality factor and specific on-resistance were 1.55eV, 1.3, 3.6$\times$10$^{-2}$ $\Omega$.$\textrm{cm}^2$ for Ni/4H-SiC Schottky barrier diodes, and 1.24eV, 1.2, 2.6$\times$10$^{-2}$$\Omega$.$\textrm{cm}^2$/ for Ni/SH-SiC Schottky barrier diodes, respectively. These results show that both Ni/4H-SiC and Ni/6H-SiC Schottky barrier diodes are very promising for high-temperature and high power applications.s..

• Korean Journal of Metals and Materials
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• v.50 no.8
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• pp.569-573
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• 2012

In order to understand the difference in SiC deposition between the $CH_3SiCl_3-H_2$ and $C_3H_8-SiCl_4-H_2$ systems, we calculate the phase stability among ${\beta}$-SiC, graphite and silicon. We constructed the phase-diagram of ${\beta}$-SiC over graphite and silicon via computational thermodynamic calculation considering pressure (P), temperature (T) and gas composition (C) as variables. Both P-T-C diagrams showed a very steep phase boundary between the SiC+C and SiC region perpendicular to the H/Si axis, and also showed an SiC+Si region with a H/Si value of up to 6700 in the $C_3H_8-SiCl_4-H_2$, and 5000 in the $CH_3SiCl_3-H_2$ system. This difference in phase boundaries is explained by the ratio of Cl to Si, which is 4 for the $C_3H_8-SiCl_4-H_2$ system and 3 for the $C_3H_8-SiCl_4-H_2$ system. Because the C/Si ratio is fixed at 1 in the $CH_3SiCl_3-H_2$ system while it can be variable in the $C_3H_8-SiCl_4-H_2$ system, the functionally graded material is applicable for better mechanical bonding during SiC coating on graphite substrate in the $C_3H_8-SiCl_4-H_2$ system.