• 한국재료학회:학술대회논문집
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• 한국재료학회 1998년도 한국재료학회 춘계학술발표강연 및 논문개요집
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• pp.97-97
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• 1998

• Progress in Superconductivity
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• 제3권1호
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• pp.31-35
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• 2001

We investigated the temperature and magnetic field dependent optical properties of a$ MgB_2$ thin film in the far-infrared region. In the superconducting state, i.e. 5 K, we obtained the values of superconducting gap $2\Delta$ ~ 5.2 meV and $2\Delta$ $_{k}$ $B/T_{c}$ ~1.8. Although the value of$ 2\Delta$$B/T_{c}$ was nearly half of the BCS value, the $2\Delta$ seemed to follow the temperature dependence of the BCS formula. Under the magnetic field (H), the superconducting state became suppressed. Interestingly, we found that the normal state area fraction abruptly increased at low field but slowly increased at high field. It did not follow the H-dependences predicted for a s-wave superconductor (i.e. a linear dependence) nor for a s-wave one (i.e. $H^{1}$2/ dependence). We discussed the complex gap nature of $MgB_2$ in comparison with two gap and anisotropic s-wave scenarios.ios.

• 한국초전도ㆍ저온공학회논문지
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• 제8권3호
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• pp.18-22
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• 2006

We obtained in-situ $MgB_2$ thin films in an one-step process using ESSD (Evaporation Sputtering Simultaneous Deposition) method. In our approach. the Ma evaporator is designed specially Mg and B are simultaneously evaporated and sputtered, respectively, in the specially designed ESSD chamber. The background pressure was less than $1{\times}10^{-6}$ Torr. The substrate temperature was kept at 623 K. The film properties were investigated by both electrical resistivity and PPMS. As a result, typical $T_c$ of films was 11 K.

• Progress in Superconductivity
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• 제14권1호
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• pp.30-33
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• 2012

We have grown $MgB_2$ superconducting thin films on the SiC buffer layers by means of hybrid physical-chemical vapor deposition (HPCVD) technique. Prior to that, SiC was first deposited on $Al_2O_3$ substrates at various temperatures from room temperature to $600^{\circ}C$ by using the pulsed laser deposition (PLD) method in a vacuum atmosphere of ${\sim}10^{-6}$ Torr pressure. All samples showed a high transition temperature of ~40 K. The grain boundaries of $MgB_2$ samples with SiC layer are greater in amount, compare to that of the pure $MgB_2$ samples. $MgB_2$ with SiC buffer layer samples show interesting change in the critical current density ($J_c$) values. Generally, at both 5 K and 20 K measurements, at lower magnetic field, all $MgB_2$ films deposited on SiC buffer layers have low $J_c$ values, but when they reach higher magnetic fields of nearly 3.5 Tesla, $J_c$ values are enhanced. $MgB_2$ film with SiC grown at $600^{\circ}C$ has the highest $J_c$ enhancement at higher magnetic fields, while all SiC buffer layer samples exhibit higher $J_c$ values than that of the pure $MgB_2$ films. A change in the grain boundary morphologies of $MgB_2$ films due to SiC buffer layer seems to be responsible for $J_c$ enhancements at high magnetic fields.

• 한국결정성장학회지
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• 제20권6호
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• pp.262-266
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• 2010

Sol-gel법을 적용하여 $12CaO{\cdot}7Al_2O_3$(C12A7) 전자화물 박막을 제조하기 위해 CaO-$Al_2O_3$ sol을 제조하여 dip 코팅법을 적용하여 quartz 기판에 박막을 형성하였으며 열처리를 통해 C12A7의 박막을 제조하였다. C12A7 상의 형성 $800^{\circ}C$에서 시작되었고 $1,200^{\circ}C$ 온도에서 1시간 열처리를 통해 치밀화된 박막을 제조할 수 있었다. 제조된 C12A7 박막은 부도체였지만 수소 환원 분위기 열처리를 통해 전기전도도를 나타내기 시작했으며 $1,200^{\circ}C$ 48시간 열처리 시 120 S/cm의 전기전도도를 나타내었다.

• 한국재료학회지
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• 제9권10호
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• pp.1006-1011
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• 1999

$SiH_4$, $CH_4$, $B_2H_6$ 혼합기체를 이용하여 플라즈마 화학증착법으로 탄화실리콘 (a-SiC:H) 박막을 증착하였다. 증착중에 혼합기체중의$CH_4$농도 ($CH_4/CH_4+SiH_4$)를 변화시켜 얻은 박막의 물성을 SEM, XRD, Raman 분광법, FTIR, XPS, 광흡수도와 광전도도 분석을 통하여 살펴보았다. $SiH_4$기체만 이용하여 증착한 Si:H 박막은 비정질상태를 나타내었으나, $CH_4$가 첨가됨에 따라 실리콘 박막의 Si-$\textrm{H}_{n}$(n은 정수) 결합기가 Si-$\textrm{C}_{n}\textrm{H}_{m}$ (n,m은 정수) 형태의 결합기로 변화되었으며, 박막내 수소함량은 $CH_4$농도가 0~0.8의 범위에서 증가함에 따라 30~45% 범위에서 증가하였다. 반응기체중의 $CH_4$농도의 증가에 따라 박막 내의 탄소 농도가 증가함을 확인하였으며, 이에 따라 막의 전기비저항과 광학적밴드갭 역시 증가하였다.

• 한국전기전자재료학회논문지
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• 제22권5호
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• pp.411-414
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• 2009

It has been investigated for the film uniformity and deposition rate of a-C:H films on glass substrate and polymeric materials in the presence of the modulated crossed magnetic field. We used Plasma CVD, i.e, using a crossed electromagnetic field, for uniform depositing thin film. The optimum discharge condition has been discussed for the gas pressure, the magnetic flux density and the distance between substrate and electrodes, As a result, it is found that the optimum discharge conditions are $CH_4$ concentration $CH_4$=10 %, modulated magnetic flux density B=48 Gauss, pressure P=100 mTorr, discharge power supply voltage V=l kV under these experimental conditions. By using these experimental condition, it is possible to prepare the most uniform film extends over about 160 mm of the film width. In this study, we deposited a-C:H thin film on glass substrate, and have a plan that using this condition, study depositing a-C:H thin film on polymeric substrate in next studies.

• Journal of Microbiology and Biotechnology
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• 제14권6호
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• pp.1303-1309
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• 2004

In order to extend shelf-life of the packaged or coated foods, an antibacterial edible film was developed. Antimicrobial activities of 9 bacteriocin-like substance (BLS)­producing strains were evaluated after growing them on defatted soybean meal medium (DSMM). Bacillus subtilis was selected among those, because it showed the biggest inhibition zone against 6 problem bacteria in food. The antimicrobial edible film, containing $0.32\%$ of BLS, was produced from the fermented soybean meal with B. subtilis at the optimum condition of pH 7.0-7.5 and $33^{\circ}C$ for 33 h. The antimicrobial activity of the film was over $50\%$ of the maximum activity after film production with heat treatment at $90^{\circ}C$ and pH adjustment to 9. When the soy protein film with BLS was applied on the agar media containing E. coli, the growth inhibition was much higher than the ordinary soy protein film. These results indicate that the soy protein film with BLS from B. subtilis can be used as a new packaging material to extend the shelf-life of foods.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 하계학술대회 논문집 C
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• pp.1587-1589
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• 2000

In this paper the weight loss, surface potential decay, surface resistivity and dielectric constant are measured to investigate the surface properties, insulation characteristic changes of PET film according to the discharge treatment. As a result of the test, up to the 10[min] the surface potential decay and surface resistivity have increased. Also, from the result of dielectric constant has decreased. On the other hand, the insulation characteristic of PET film have decreased after 10[min] in the discharge treatment.

• 한국표면공학회지
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• 제38권2호
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• pp.60-64
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• 2005

The ICP-CVD (inductively coupled plasma chemical vapor deposition) process was applied to the deposition of $TiB_2$ films. For plasma generation, 13.56 MHz r.f. power was supplied to 2-turn Cu coil placed inside chamber. And the gas mixture of $TiCl_4,\;BCl_3,\;H_2$ and Ar was used for $TiB_2$ deposition. $TiB_2$ films with high hardness (<40 GPa) were obtained at extremely low deposition temperature $(250^{\circ}C)$, and the films hardness increased with ICP power and gas flow ratio of $TiCl_4/BCl_3$. The film structure was changed from (100) preferred orientation to random orientation with increasing RF power. It is supposed that the enhanced hardness of films was caused by a strong Ti-B chemical bonding of stoichiometric $TiB_2$ films and film densification induced by high density plasma.