• 센서학회지
• /
• 제29권2호
• /
• pp.82-88
• /
• 2020

In this paper, we propose a complementary metal-oxide semiconductor (CMOS) binary image sensor with a gate/body-tied (GBT) p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET)-type photodetector using a double-tail comparator for high-speed and low-power operations. The GBT photodetector is based on a PMOSFET tied with a floating gate (n+ polysilicon) and a body that amplifies the photocurrent generated by incident light. A double-tail comparator compares an input signal with a reference voltage and returns the output signal as either 0 or 1. The signal processing speed and power consumption of a double-tail comparator are superior over those of conventional comparator. Further, the use of a double-sampling circuit reduces the standard deviation of the output voltages. Therefore, the proposed CMOS binary image sensor using a double-tail comparator might have advantages, such as low power consumption and high signal processing speed. The proposed CMOS binary image sensor is designed and simulated using the standard 0.18 ㎛ CMOS process.

• 제어로봇시스템학회:학술대회논문집
• /
• 제어로봇시스템학회 2000년도 제15차 학술회의논문집
• /
• pp.510-510
• /
• 2000

This paper introduces the design of BiCMOS latched comparator circuit for high-speed system application, which can be used in data conversion, instrumentation, communication system etc. By exploiting the advantage technology of the combination of both the bipolar transistor and the CMOS transistor devices. The comparator circuit includes an input stage that combines MOS sampling with a bipolar regenerative amplifier. The resistive load of conventional current-steering comparator is replaced by a load, which is made by a NMOS transistor. The advantage of design and PSPICE simulation of BiCMOS latched comparator are the circuit will obtain wide bandwidth with lowest power consumption at a single supply voltage. All the characteristics of the proposed BiCMOS latched comparator circuit is carried out by simulation program.

• IEIE Transactions on Smart Processing and Computing
• /
• 제4권4호
• /
• pp.291-296
• /
• 2015

This paper describes the design of a high-speed comparator for high-speed automatic test equipment (ATE). The normal comparator block, which compares the detected signal from the device under test (DUT) to the reference signal from an internal digital-to-analog converter (DAC), is composed of a rail-to-rail first pre-amplifier, a hysteresis amplifier, and a third pre-amplifier and latch for high-speed operation. The proposed continuous comparator handles high-frequency signals up to 800MHz and a wide range of input signals (0~5V). Also, to compare the differences of both common signals and differential signals between two DUTs, the proposed differential mode comparator exploits one differential difference amplifier (DDA) as a pre-amplifier in the comparator, while a conventional differential comparator uses three op-amps as a pre-amplifier. The chip was implemented with $0.18{\mu}m$ Bipolar CMOS DEMOS (BCDMOS) technology, can compare signal differences of 5mV, and operates in a frequency range up to 800MHz. The chip area is $0.514mm^2$.

• ETRI Journal
• /
• 제45권3호
• /
• pp.534-542
• /
• 2023

The large amount of secondary effects in complementary metal-oxide-semiconductor technology limits its application in the ultra-nanoscale region. Circuit designers explore a new technology for the ultra-nanoscale region, which is the quantum-dot cellular automata (QCA). Low-energy dissipation, high speed, and area efficiency are the key features of the QCA technology. This research proposes a novel, low-complexity, QCA-based one-bit digital comparator circuit for the ultra-nanoscale region. The performance of the proposed comparator circuit is presented in detail in this paper and compared with that of existing designs. The proposed QCA structure for the comparator circuit only consists of 19 QCA cells with two clock phases. QCA Designer-E and QCA Pro tools are applied to estimate the total energy dissipation. The proposed comparator saves 24.00% QCA cells, 25.00% cell area, 37.50% layout cost, and 78.11% energy dissipation compared with the best reported similar design.

• 센서학회지
• /
• 제30권2호
• /
• pp.82-87
• /
• 2021

In this paper, we propose a high-speed, low-power complementary metal-oxide semiconductor (CMOS) binary image sensor featuring a gate/body-tied (GBT) p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET)-type photodetector based on a double-tail comparator. The GBT photodetector forms a structure in which the floating gate (n+ polysilicon) and body of the PMOSFET are tied, and amplifies the photocurrent generated by incident light. The double-tail comparator compares the output signal of a pixel against a reference voltage and returns a binary signal, and it exhibits improved power consumption and processing speed compared with those of a conventional two-stage comparator. The proposed sensor has the advantages of a high signal processing speed and low power consumption. The proposed CMOS binary image sensor was designed and fabricated using a standard 0.18 ㎛ CMOS process.

• 한국정보전자통신기술학회논문지
• /
• 제16권6호
• /
• pp.465-471
• /
• 2023

본 논문은 CMOS Image Sensor(CIS)에 사용되는 single-slope ADC(SS-ADC)의 노이즈와 출력의 지연을 개선한 비교기 구조를 제안한다. 노이즈와 출력의 지연 특성을 개선하기 위해 비교기의 첫 번째 단의 출력 노드와 두 번째 단의 출력 노드 사이에 커패시터를 삽입하여 miller effect를 이용한 비교기 구조를 설계하였다. 제안하는 비교기 구조는 작은 capacitor를 이용하여 노이즈와 출력의 지연 및 layout 면적을 개선하였다. Single slop ADC에서 사용되는 CDS 카운터는 T-filp flop과 bitwise inversion 회로를 사용하여 설계하였고 전력 소모와 속도가 개선되었다. 또한 single slop ADC는 analog correlated double sampling(CDS)와 digital CDS를 함께 동작하는 dual CDS를 수행한다. Dual CDS를 수행함으로써 fixed pattern noise(FPN), reset noise, ADC error를 줄여 이미지 품질이 향상된다. 제안하는 comparator 구조가 사용된 single-slope ADC는 0.18㎛ CMOS 공정으로 설계되었다.

• 전자공학회논문지C
• /
• 제34C권12호
• /
• pp.28-36
• /
• 1997

In this paper, system application techniques of a low-voltage low-power CMOS comparator are proposed. The proposed techniques employ poly-layer lines instead of conventional dummy cells to improve the accuracy of comparators which are located in both ends of a comparator array. This technique is easily applicable for hihg-density systems such as memory. The proposed circuits are implemented using a 0.6 um signle-poly double-metal n-well CMOS technology and the dissipated power is 0.38 mW. at a 20MHz clock speed based on a 3V supply. The comparator offsets are measured separately and compared for system applications. Using the proposed techniues, the measured comparator offsets are reduced by 40% of a conventional case.

• 한국철도학회:학술대회논문집
• /
• 한국철도학회 1998년도 추계학술대회 논문집
• /
• pp.270-279
• /
• 1998

This paper presents the design of self-checking comparator using the time diversity and the application to 8 bit CPU for the implementation of fault tolerant computer system. this self-checking comparator was designed with the different time Points in which temporary faults were raised by electrical noise between duplicated functional blocks. also this self-checking comparator was simulated in the method of the fault injection using 4 bit shift register counter. we designed the duplicated Emotional block and the self-checking comparator in the single chip using the Altera EPLD and could verify the reliability and the fault detection coverage through the modeling of temporary faults ,especially intermittent faults. at the results of this research, the reliability and the fault detection coverage were implemented through the self-checking comparator using the time diversity.

• 한국철도학회:학술대회논문집
• /
• 한국철도학회 1998년도 창립기념 춘계학술대회 논문집
• /
• pp.408-418
• /
• 1998

This paper presents the implementation of comparator which is self-testing with respect to the faults caused by any single physical defect likely to occur in NMOS and CMOS integrated circuit. The goal is to use it for the fault-tolerant system. First, a new fault model for PLA(Programmable Logic Array) is presented. This model reflects several physical defects in VLSI circuits. It focuses on the designs based on PLA because VLSI chips are far too complex to allow detailed analysis of all the possible physical defects that can occur and of the effects on the operation of the circuit. Second, this paper shows that these design, which has been implemented with 2 level AND-ORor NOR-NOR circuit, are optimal in term of size. And it also presents a formal proof that a comparator implemented using NOR-NOR PLA, based on these design, is sol f-testing with respect to most single faults in the presented fault model. Finally, it discusses the application of the self-testing comparator as a building block for the implementation of the fault-tolerant system.

• 한국전자통신학회논문지
• /
• 제16권3호
• /
• pp.417-422
• /
• 2021

본 논문에서는 시간영역 비교기를 응용한 ZQ 보정회로를 제안한다. 제안하는 비교기는 VCO기반으로 설계되었으며 전력소모를 감소시키기 위해 추가적인 클록 발생기를 사용하였다. 제안한 비교기를 사용하여 참조 전압과 PAD 전압을 낮은 1 LSB 전압 단위로 비교하여 추가적인 오프셋 보정과정을 생략할 수 있었다. 제안하는 시간영역 비교기 기반의 ZQ 보정회로는 1.05 V 및 0.5 V 공급전압의 65 nm CMOS공정으로 설계되었다. 제안한 클록 발생기를 통해 단일 시간영역 비교기 대비 37 %의 전력소모가 감소하였으며 제안하는 ZQ 보정 회로를 통해 최대 67.4 %의 mask margin을 증가시켰다.