• Journal of Sensor Science and Technology
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• v.29 no.2
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• pp.82-88
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• 2020

In this paper, we propose a complementary metal-oxide semiconductor (CMOS) binary image sensor with a gate/body-tied (GBT) p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET)-type photodetector using a double-tail comparator for high-speed and low-power operations. The GBT photodetector is based on a PMOSFET tied with a floating gate (n+ polysilicon) and a body that amplifies the photocurrent generated by incident light. A double-tail comparator compares an input signal with a reference voltage and returns the output signal as either 0 or 1. The signal processing speed and power consumption of a double-tail comparator are superior over those of conventional comparator. Further, the use of a double-sampling circuit reduces the standard deviation of the output voltages. Therefore, the proposed CMOS binary image sensor using a double-tail comparator might have advantages, such as low power consumption and high signal processing speed. The proposed CMOS binary image sensor is designed and simulated using the standard 0.18 ㎛ CMOS process.

• 제어로봇시스템학회:학술대회논문집
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• 2000.10a
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• pp.510-510
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• 2000

This paper introduces the design of BiCMOS latched comparator circuit for high-speed system application, which can be used in data conversion, instrumentation, communication system etc. By exploiting the advantage technology of the combination of both the bipolar transistor and the CMOS transistor devices. The comparator circuit includes an input stage that combines MOS sampling with a bipolar regenerative amplifier. The resistive load of conventional current-steering comparator is replaced by a load, which is made by a NMOS transistor. The advantage of design and PSPICE simulation of BiCMOS latched comparator are the circuit will obtain wide bandwidth with lowest power consumption at a single supply voltage. All the characteristics of the proposed BiCMOS latched comparator circuit is carried out by simulation program.

• IEIE Transactions on Smart Processing and Computing
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• v.4 no.4
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• pp.291-296
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• 2015

This paper describes the design of a high-speed comparator for high-speed automatic test equipment (ATE). The normal comparator block, which compares the detected signal from the device under test (DUT) to the reference signal from an internal digital-to-analog converter (DAC), is composed of a rail-to-rail first pre-amplifier, a hysteresis amplifier, and a third pre-amplifier and latch for high-speed operation. The proposed continuous comparator handles high-frequency signals up to 800MHz and a wide range of input signals (0~5V). Also, to compare the differences of both common signals and differential signals between two DUTs, the proposed differential mode comparator exploits one differential difference amplifier (DDA) as a pre-amplifier in the comparator, while a conventional differential comparator uses three op-amps as a pre-amplifier. The chip was implemented with $0.18{\mu}m$ Bipolar CMOS DEMOS (BCDMOS) technology, can compare signal differences of 5mV, and operates in a frequency range up to 800MHz. The chip area is $0.514mm^2$.

• ETRI Journal
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• v.45 no.3
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• pp.534-542
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• 2023

The large amount of secondary effects in complementary metal-oxide-semiconductor technology limits its application in the ultra-nanoscale region. Circuit designers explore a new technology for the ultra-nanoscale region, which is the quantum-dot cellular automata (QCA). Low-energy dissipation, high speed, and area efficiency are the key features of the QCA technology. This research proposes a novel, low-complexity, QCA-based one-bit digital comparator circuit for the ultra-nanoscale region. The performance of the proposed comparator circuit is presented in detail in this paper and compared with that of existing designs. The proposed QCA structure for the comparator circuit only consists of 19 QCA cells with two clock phases. QCA Designer-E and QCA Pro tools are applied to estimate the total energy dissipation. The proposed comparator saves 24.00% QCA cells, 25.00% cell area, 37.50% layout cost, and 78.11% energy dissipation compared with the best reported similar design.

• Journal of Sensor Science and Technology
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• v.30 no.2
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• pp.82-87
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• 2021

In this paper, we propose a high-speed, low-power complementary metal-oxide semiconductor (CMOS) binary image sensor featuring a gate/body-tied (GBT) p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET)-type photodetector based on a double-tail comparator. The GBT photodetector forms a structure in which the floating gate (n+ polysilicon) and body of the PMOSFET are tied, and amplifies the photocurrent generated by incident light. The double-tail comparator compares the output signal of a pixel against a reference voltage and returns a binary signal, and it exhibits improved power consumption and processing speed compared with those of a conventional two-stage comparator. The proposed sensor has the advantages of a high signal processing speed and low power consumption. The proposed CMOS binary image sensor was designed and fabricated using a standard 0.18 ㎛ CMOS process.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.16 no.6
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• pp.465-471
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• 2023

This paper proposes a comparator structure that improves the noise and output delay of a single-slope ADC(SS-ADC) used in CMOS Image Sensor (CIS). To improve the noise and delay characteristics of the output, a comparator structure using the miller effect is designed by inserting a capacitor between the output node of the first stage and the output node of the second stage of the comparator. The proposed comparator structure improves the noise, delay of the output, and layout area by using a small capacitor. The CDS counter used in the single slop ADC is designed using a T-filp flop and bitwise inversion circuit, which improves power consumption and speed. The single-slope ADC also performs dual CDS, which combines analog correlated double sampling (CDS) and digital CDS. By performing dual CDS, image quality is improved by reducing fixed pattern noise (FPN), reset noise, and ADC error. The single-slope ADC with the proposed comparator structure is designed in a 0.18-㎛ CMOS process.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.34C no.12
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• pp.28-36
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• 1997

In this paper, system application techniques of a low-voltage low-power CMOS comparator are proposed. The proposed techniques employ poly-layer lines instead of conventional dummy cells to improve the accuracy of comparators which are located in both ends of a comparator array. This technique is easily applicable for hihg-density systems such as memory. The proposed circuits are implemented using a 0.6 um signle-poly double-metal n-well CMOS technology and the dissipated power is 0.38 mW. at a 20MHz clock speed based on a 3V supply. The comparator offsets are measured separately and compared for system applications. Using the proposed techniues, the measured comparator offsets are reduced by 40% of a conventional case.

• Proceedings of the KSR Conference
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• 1998.11a
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• pp.270-279
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• 1998

This paper presents the design of self-checking comparator using the time diversity and the application to 8 bit CPU for the implementation of fault tolerant computer system. this self-checking comparator was designed with the different time Points in which temporary faults were raised by electrical noise between duplicated functional blocks. also this self-checking comparator was simulated in the method of the fault injection using 4 bit shift register counter. we designed the duplicated Emotional block and the self-checking comparator in the single chip using the Altera EPLD and could verify the reliability and the fault detection coverage through the modeling of temporary faults ,especially intermittent faults. at the results of this research, the reliability and the fault detection coverage were implemented through the self-checking comparator using the time diversity.

• Proceedings of the KSR Conference
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• 1998.05a
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• pp.408-418
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• 1998

This paper presents the implementation of comparator which is self-testing with respect to the faults caused by any single physical defect likely to occur in NMOS and CMOS integrated circuit. The goal is to use it for the fault-tolerant system. First, a new fault model for PLA(Programmable Logic Array) is presented. This model reflects several physical defects in VLSI circuits. It focuses on the designs based on PLA because VLSI chips are far too complex to allow detailed analysis of all the possible physical defects that can occur and of the effects on the operation of the circuit. Second, this paper shows that these design, which has been implemented with 2 level AND-ORor NOR-NOR circuit, are optimal in term of size. And it also presents a formal proof that a comparator implemented using NOR-NOR PLA, based on these design, is sol f-testing with respect to most single faults in the presented fault model. Finally, it discusses the application of the self-testing comparator as a building block for the implementation of the fault-tolerant system.

• The Journal of the Korea institute of electronic communication sciences
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• v.16 no.3
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• pp.417-422
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• 2021

In this paper, a ZQ calibration using a time domain comparator is proposed. The proposed comparator is designed based on VCO, and an additional clock generator is used to reduce power consumption. By using the proposed comparator, the reference voltage and the PAD voltage were compared with a low 1 LSB voltage, so that the additional offset cancelation process could be omitted. The proposed time domain comparator-based ZQ calibration circuit was designed with a 65nm CMOS process with 1.05V and 0.5V supply voltages. The proposed clock generator reduces power consumption by 37% compared to a single time domain comparator, and the proposed ZQ calibration increases the mask margin by up to 67.4%.