• Applied Microscopy
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• 제45권1호
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• pp.16-22
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• 2015

The reaction kinetics of the growth of Ni germanide in the Ni/Zr-interlayer/Ge system was investigated using isothermal in situ annealing at three different temperatures in a transmission electron microscope. The growth rate of Ni germanide in the Ni/Zr-interlayer/Ge system was determined to be diffusion controlled and depended on the square root of the time, with the activation energy of $1.04P{\pm}0.04eV$. For the Ni/Zr-interlayer/Ge system, no intermediate or intermixing layer between the Zr-interlayer and Ge substrate was formed, and thus the Ni germanide was formed and grew uniformly due to Ni diffusion through the diffusion path created in the amorphous Zr-interlayer during the annealing process in the absence of any intermetallic compounds. The reaction kinetics in the Ni/Zr-interlayer/Ge system was affected only by the Zr-interlayer.

• 한국자동차공학회논문집
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• 제4권6호
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• pp.18-26
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• 1996

A two dimensional thermo elasto-plastic finite element stress analysis was performed to study residual stress distributions in AI composites reinforced by SiC whisker and $ZrO_2$ ceramic joints. The influences on the residual stress distributions due to the difference of the reinforcement volume fraction and interlayer material property were investigated. Specifically, stress distributions between AI interlayer material property were investigated. Specifically, stress distributions between AI interlayer and $ZrO_2$ ceramic and between the AI interlayer and AI composite were computationally analzed.

• 한국세라믹학회지
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• 제39권8호
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• pp.742-749
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• 2002

R. F. magnetron sputtering법을 이용하여 Pt/Ti/$SiO_2$/Si 기판 위에 $Pb_{1.1}Zr_{0.53}Ti_{0.47}O_3$ target을 사용하여 박막을 제조하였다. Interlayer(PbO, $TiO_2$, PbO/$TiO_2$)층을 삽입함으로써 박막의 결정성을 향상시켰고, 박막의 기판온도도 상당히 낮출 수 있었다. 순수한 PZT에 비하여 interlayer를 삽입한 PZT는 높은 유전상수과 낮은 유전손실 및 높은 누설전류를 가지는 우수한 전기적 특성을 나타내었다. 이러한 PZT 박막과 interlayer 층은 증착온도에서 서로 반응하여 하나의 고용체를 이루지 않고, 각각 독립적인 층으로 존재함을 XPS 분석을 통해 확인하였다. 여러 interlayer중 특히 PbO/$TiO_2$는 우수한 유전특성(${\varepsilon}_r$=414.94, tan${\delta}$=0.0241, Pr=22${\mu}C/cm^2$)을 나타내었고 가장 효과적인 seed로써의 역할을 하였다.

• 한국진공학회지
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• 제16권6호
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• pp.446-452
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• 2007

R.F. magnetron-sputtering 방법에 의해 $(Pb_{1.1},La_{0.08})(Zr_{0.65}.Ti_{0.35})O_3$ 박막을 $Pt/Ti/SiO_2/Si$, $TiO_2(interlayer)/Pt/Ti/SiO_2/Si$ 기판에 증착하고, $TiO_2$ interlayer에 의한 PLZT 박막의 특성을 고찰 하였다. $TiO_2$ interlayer의 증착조건을 변화시켜가며 단일상의 anatase 상과 rutile 상을 증착하였고, 그 위에 증착시킨 PLZT 박막의결정성을 x-ray diffraction(XRD)을 통해 분석하였다. 또한 $TiO_2$ interlayer에 의한 $PLZT-TiO_2$, $TiO_2-Pt$ 박막의 계면상태를 고찰하기 위해 glow discharge spectrometer(GDS) 분석을 행하였고, PLZT의 강유전 특성을 고찰하기 위해 전기적 측정을 행하였다. $TiO_2$ anatase 단일 상에 증착한 PLZT의 경우 (110) 방향으로 우선 배향됨을 알 수 있었고, 12.6 ${\mu}C/cm^2$의 잔류분극 값을 나타내었다.

• 한국세라믹학회지
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• 제42권12호
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• pp.787-792
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• 2005

A symmetrical LSCF $(La_{0.6}Sr_{0.4}Co_{0.2}Fe_{0.8}O_{3-\delta})\;ScSZ(89ZrO_2-10Sc_2O_3-1CeO_2)/LSCF$ electrochemical cell with a GDC (Gadolinium-Doped Ceria, $90CeO_2-10Gd_2O_3$) interlayer that was inserted between the LSCF cathode and ScSZ electrolyte was fabricated, and the electrochemical performance of these cells was evaluated. The GDC interlayer was deposited on a ScSZ electrolyte using a screen-printing technique. The GDC interlayer prevented the unfavorable solid-state reactions at the LSCF/ScSZ interfaces. The LSCF cathode on the GDC interlayer had excellent electrocatalytic performance even at $650^{\circ}C$. The Area Specific Resistance (ASR) was strongly dependent on the thickness and heat-treatment temperature of the GDC interlayer. The impedance spectra showed that the cell with a $15\~27{\mu}m$ thick GDC interlayer heat-treated at $1200^{\circ}C$ had the lowest ASR.

• 한국진공학회지
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• 제12권S1호
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• pp.83-87
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• 2003

Zirconium oxide films have been synthesized by radio-frequency magnetron sputtering deposition on n-Si(001) substrate with metal zirconium target at variant $O_2$ partial pressures. The influences of $O_2$ partial pressures of the morphology, deposition rate, microstructure, and the dielectric constant of $ZrO_2$ have been discussed. The results show that deposition rate of $ZrO_2$ films decreases, the roughness, and the thickness of the native $SiO_2$ interlayer increases with the increase of $O_2$ partial pressure. $ZrO_2$ films synthesized at low $O_2$ partial pressure are amorphous and monoclinic polycrystalline in nanometer scale at low $O_2$ partial pressure. The relative dielectrics of $ZrO_2$ films are in the range of 12 to 25.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2008년도 추계학술발표대회 및 제15회 신소재 심포지엄
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• pp.35.2-35.2
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• 2008

• Journal of Welding and Joining
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• 제11권1호
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• pp.62-72
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• 1993

Recently there is an increased interest in joining of ceramics to metals and brazing now an accepted method of joining for a wide variety of ceramic to metal combination. The present research work is aimed at establishing the basis of the metal-ceramic joining of $Al_{2}$O$_{3}$ to STS 304 with using Cu-7.5wt% Zr insert metals. Also the microstructures of the brazed joints were observed by using optical microscope and SEM and the reaction products were analyzed by using EDX, WDX and XRD. As a result, the following findings were obtained. The reaction layers of the brazed joints of $Al_{2}$O$_{3}$ to STS 304 are composed of four layers at the bonded interlayer. Double reaction layers are formed at the interface of $Al_{2}$O$_{3}$ insert metal. Layer I was composed of ZrO$_{2}$ particles, Fe-Cr-Ni compounds in Cu matrix, while layer II ZrO$_{2}$ band phase containing Fe-Cr-Ni compounds.

• 마이크로전자및패키징학회지
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• 제22권4호
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• pp.77-82
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• 2015

To increase the performance of solid oxide fuel cell operating at intermediate temperature ($600^{\circ}C{\sim}800^{\circ}C$), $Sm_{0.2}Ce_{0.8}O_2$ (SDC) thin layer was applied to the $La_{0.8}Sr_{0.2}Mn_{0.8}Cu_{0.2}O_3$ (LSMCu) cathode by sol-gel coating method. The SDC was employed as a diffusion barrier layer on the yttria-stabilized zirconia(YSZ) to prevent the interlayer by-product formation of $SrZrO_3$ or $La_2Zr_2O_7$. The by-products were hardly formed at the electrolyte-cathode interlayer resulting to reduce the cathode polarization resistance. Moreover, SDC thin film was coated on the cathode pore wall surface to extend the triple phase boundary (TPB) area.

• 한국전기전자재료학회논문지
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• 제22권5호
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• pp.425-430
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• 2009

$ZrO_2$ film was deposited by facing target sputtering (FTS) system on polyethylene naphthalate (PEN) substrate as a gas barrier layer for flexible organic light emitting devices (FOLEDs), In order to control the heat of the FTS system caused by the ion bombardment in the cathode compared with the conventional sputtering system, the process characteristics of the FTS apparatus are investigated under various sputtering conditions such as the distance between two targets ($d_{TT}$), the distance between the target and the substrate ($d_{TS}$), and the deposition time. The $ZrO_2$ film by the FTS system can reduce the damage on the films because the ion bombardment with high-energy particles like gamma-electrons, Moreover, the $ZrO_2$ film with optimized condition ($d_{TT}$=140 mm) as a function of the distance from center to edge showed a very uniform thickness below 5 % for a deposition time of 3 hours, which can improve the interface property between the anode and the plastics substrate for flexible displays, It is concluded that the $ZrO_2$ film prepared by the FTS system can be applied as a gas barrier layer or an interlayer between the anode and the plastic substrate with good properties of an uniform thickness and a low deposition-temperature.