• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.253-253
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• 2011

ZnTe semiconductor is very attractive a material for optoelectronic devices in the visible green spectral region because of it has direct bandgap of 2.26 eV. The prototypes of ZnTe light emitting diodes (LEDs) have been reported [1], showing that their green emission peak closely matches the most sensitive region of the human eye. The optoelectronic properties of ZnTe:O film allow to expect a large optical gain in the intermediate emission band, which emission band lies about 0.4-0.6 eV below the conduction band of ZnTe [2]. So, the ZnTe system is useful for the production of high-efficiency multi-junction solar cells [2,3]. In this work, the ZnTe:O thin films were deposited on Al2O3 substrates by using the radio frequency magnetron sputtering system. Three sets of samples were prepared using argon and oxygen as the sputtering gas. The deposition chamber was pre-pumped down to a base pressure of 10-7 Torr before introducing gas. The deposition pressure was fixed at 10-3 Torr throughout this work. During the ZnTe deposition, the substrate temperature was 300 oC. The optical properties were also investigated by using the ultraviolte-visible (UV-Vis) spectrophotometer.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.166.2-166.2
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• 2014

In this work, we demonstrated a facile and effective method for deposition of metal tetraphenylporphyrin (MTPP) thin film by a combined a thermal evaporation (TE) and atomic layer deposition (ALD). For the deposition of Zn-TPP thin film, Tetraphenylporphyrin (TPP) and diethyl zinc (DEZ) were used as organic and inorganic materials, respectively. Optimum conditions for the deposition of Zn-TPP thin film were established systematically: (1) the exposure time of DEZ as inorganic precursor and (2) the substrate temperature were adjusted, respectively. As a result, we verified that the surface reaction between organic semiconductor (TPP) and metal atom (Zn) was ALD process. In addition, we calculated activation energy by using Arrhenius equation for the substrate temperature versus area change rate of pyrrolic nitrogen. The surface and interface reactions between TPP with Zn were investigated by X-ray photoelectron spectroscopy, Raman spectroscopy, UV-vis spectroscopy, and scanning electron microscopy. These results show a facile and well-controllable fabrication technique for the metal-organic thin film for future electronic applications.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.185-185
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• 2011

ZnTe semiconductor is very attractive materials for optoelectronic devices in the visible green spectral region because of it has direct bandgap of 2.26 eV. The prototypes of ZnTe light emitting diodes (LEDs) have been reported [1], showing that their green emission peak closely matches the most sensitive region of the human eye. Another application to photovoltaics proved that ZnTe is useful for the production of high-efficiency multi-junction solar cells [2,3]. By using the pulse laser deposition system, ZnTe thin films were deposited on ZnO thin layer, which is grown on (0001) Al2O3substrates. To produce the plasma plume from an ablated ZnO and ZnTe target, a pulsed (10 Hz) YGA:Nd laser with energy density of 95 mJ/$cm^2$ and wavelength of 266 nm by a nonlinear fourth harmonic generator was used. The laser spot focused on the surface of the ZnO and ZnTe target by using an optical lens was approximately 1 mm2. The base pressure of the chamber was kept at a pressure around $10^{-6}$ Torr by using a turbo molecular pump. The oxygen gas flow was controlled around 3 sccm by using a mass flow controller system. During the ZnTe deposition, the substrate temperature was $400^{\circ}C$ and the ambient gas pressure was $10^{-2}$ Torr. The structural properties of the samples were analyzed by XRD measurement. The optical properties were investigated by using the photoluminescence spectra obtained with a 325 nm wavelength He-Cd laser. The film surface and carrier concentration were analyzed by an atomic force microscope and Hall measurement system.

• E2M - 전기 전자와 첨단 소재
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• 제10권1호
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• pp.39-44
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• 1997

Bulk type radiation detector of Au/Cd$_{1-x}$ Zn$_{x}$Te(x=20%)/Au structure using Cd$_{1-x}$ Zn$_{x}$Te(x=20%) wafer(3x4xl mm$^{3}$) grown by high pressure Bridgman method has been developed. We etched wafer surfaces with 2% Br-methanol solution and coated gold thin film on the surfaces by electroless deposition method for 5 min. in 49/o HAuCI$_{3}$ 4H20 solution. Initial etch rates of Cd, Zn and Te were 46%, 12% and 42% respectively. After etched, the surface of wafer was slightly revealed to Te rich condition. The leakage current was increased with etch time, but it didn't exceed 3nA at 50volt. The thickness of Au film was about 100nm by Rutherford Backscattering Spectroscopy(RBS). The resolution were 6.7% for 22.1 keV photon from 109 $^{109}$ Cd and 8.2% for 59.5 keV photon from $^{241}$ Am. The radiation detector such as Au/Cd$_{1-x}$ Zn$_{x}$Te(x=20%)/Au structure was more effective to monitor the low energy gamma radiation.iation.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2018년도 춘계학술대회 논문집
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• pp.52-52
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• 2018

Only approximately 30% of fossil fuel energy is used; therefore, it is desirable to utilize the huge amounts of waste energy. Thermoelectric (TE) materials that convert heat into electrical power are a promising energy technology. The TE materials can be formed either as thin films or as bulk semiconductors. Generally, thin-film TE materials have low energy conversion rates due to their thinness compared to that in bulk. However, an advantage of a thin-film TE material is that the efficiency can be smartly engineered by controlling the nanostructure and composition. Especially nanostructured TE thin films are useful for mitigating heating problems in highly integrated microelectronic devices by accurately controlling the temperature. Hence, there is a rising interest in thin-film TE devices. These devices have been extensively investigated. It is demonstrated that transparent amorphous oxide semiconductors (TAOS) can be excellent thermoelectric (TE) materials, since their thermal conductivity (${\kappa}$) through a randomly disordered structure is quite low, while their electrical conductivity and carrier mobility (${\mu}$) are high, compared to crystalline semiconductors through the first-principles calculations and the various measurements for the amorphous In-Zn-O (a-IZO) thin film. The calculated phonon dispersion in a-IZO shows non-linear phonon instability, which can prevent the transport of phonon. The a-IZO was measured to have poor ${\kappa}$ and high electrical conductivity compared to crystalline $In_2O_3:Sn$ (c-ITO). These properties show that the TAOS can be an excellent thin-film transparent TE material. It is suggested that the TAOS can be employed to mitigate the heating problem in the transparent display devices.

• 전자공학회논문지D
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• 제34D권4호
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• pp.47-53
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• 1997

We fabricated gamma radiation detector using high resistive p-Cd$_{80}$Zn$_{20}$Te grown by high pressure bridgman method and forming au thin film electrode by chemically electroless deposition method. The device of Au/Cd$_{80}$Zn$_{20}$Te/Au is a typical MIM structure. The characteristic of current-voltage showed good linearity to 3kV/cm but it depend on the square of electric field over 3kV/cm. As the results of rutherford backscattering spectroscope(RBS) and auger spectroscope on the Au/Cd$_{80}$Zn$_{20}$Te, Au penetrated to the surface of Cd$_{80}$Zn$_{20}$Te detector absorbed slightly high energy radiation like a few hundred keV and showed good performance to detect low energy gamma ray.mma ray.

• 센서학회지
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• 제13권2호
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• pp.128-132
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• 2004

Short wave infrared (SWIR) photovoltaic devices have been fabricated from metal organic vapour phase epitaxy (MOVPE) grown n- on p- HgCdTe films on GaAs substrates. The MOVPE grown films were processed into mesa type discrete devices with wet chemical etching employed for meas delineation and ZnS surface passivatlon. ZnS was thermally evaporated from effusion cell in an ultra high vacuum (UHV) chamber. The main features of the ZnS deposited from effusion cell in UHV chamber are low fixed surface charge density, and small hysteresis. It was found that a negative flat band voltage with -0.6 V has been obtained for Metal Insulator Semiconductor (MIS) capacitor which was evaporated at $910^{\circ}C$ for 90 min. Current-Voltage (I-V) and temperature dependence of the I-V characteristics were measured in the temperature range 80 - 300 K. The Zero bias dynamic resistance-area product ($R_{0}A$) was about $7500{\Omega}-cm^{2}$ at room temperature. The physical mechanisms that dominate dark current properties in the HgCdTe photodiodes are examined by the dependence of the $R_{0}A$ product upon reciprocal temperature. From theoretical considerations and known current expressions for thermal and tunnelling process, the device is shown to be diffusion limited up to 180 K and g-r limited at temperature below this.

• 한국재료학회지
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• 제22권5호
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• pp.259-273
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• 2012

Chalcogenide-based semiconductors, such as $CuInSe_2$, $CuGaSe_2$, Cu(In,Ga)$Se_2$ (CIGS), and CdTe have attracted considerable interest as efficient materials in thin film solar cells (TFSCs). Currently, CIGS and CdTe TFSCs have demonstrated the highest power conversion efficiency (PCE) of over 11% in module production. However, commercialized CIGS and CdTe TFSCs have some limitations due to the scarcity of In, Ga, and Te and the environmental issues associated with Cd and Se. Recently, kesterite CZTS, which is one of the In- and Ga- free absorber materials, has been attracted considerable attention as a new candidate for use as an absorber material in thin film solar cells. The CZTS-based absorber material has outstanding characteristics such as band gap energy of 1.0 eV to 1.5 eV, high absorption coefficient on the order of $10^4cm^{-1}$, and high theoretical conversion efficiency of 32.2% in thin film solar cells. Despite these promising characteristics, research into CZTS-based thin film solar cells is still incomprehensive and related reports are quite few compared to those for CIGS thin film solar cells, which show high efficiency of over 20%. The recent development of kesterite-based CZTS thin film solar cells is summarized in this work. The new challenges for enhanced performance in CZTS thin films are examined and prospective issues are addressed as well.

• 한국군사과학기술학회지
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• 제15권4호
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• pp.502-506
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• 2012

In order to find the structural characteristics of the thin films of group II-VI semiconductor compounds compared with those of powder materials, films were made of 4 powders of ZnS, CdS, CdSe, and CdTe(Aldrich), each with 99.99 % purity. For the ZnS/CdS multi-layers, the ZnS layer was coated over the CdS layer on an $AlO_x$ membrane, which served as a protective layer within a vacuum at the average speed of 1 ${\AA}$/sec. After studying the structures of the group II-VI semiconductor thin films by using X-ray spectroscopy, we found that the ZnS, ZnS/CdS, CdS, and CdSe films were hexagonal and exhibited some degree of preferred orientation. Also, the particles of the thin films of II-VI semiconductor compounds proved to be more homogeneous in size compared to those of the powder materials. These results were further verified through scanning electron microscopy(SEM), EDX analysis, and powder and thin film X-ray diffraction.

• Current Photovoltaic Research
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• 제2권1호
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• pp.8-13
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• 2014

ZnSe/$Zn_3P_2$ heterojunctions with a substrate configuration were fabricated using a series of cost-effective processes. Thin films of ZnTe and $Zn_3P_2$ were successively grown by close-spaced sublimation onto Mo-coated glass substrates. ZnSe layers thinner than 100nm were formed by annealing the $Zn_3P_2$ films in selenium vapor. Surface selenization generated a high density of micro-cracks which, along with voids, provided shunt paths and severely deteriorated the diode characteristics. Annealing the $Zn_3P_2$ film at $300^{\circ}C$ in a $ZnCl_2$ atmosphere before surface selenization produced a dense microstructure and prevented micro-crack generation. The mechanism of micro-crack generation by the selenization was described and the suppression effect of $ZnCl_2$ treatment on the micro-crack generation was explained. ZnSe/$Zn_3P_2$ heterojunctions with low leakage current ($J_0$ < $1{\mu}A/cm^2$) were obtained using an optimized surface selenization process with $ZnCl_2$ treatment. However, the series resistance was very high due to the presence of an electrical barrier between the ZnTe and $Zn_3P_2$ layers.