• Proceedings of the Korean Ceranic Society Conference
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• 2000.10a
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• pp.155.2-155
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• 2000

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1455-1458
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• 1997

In order to promote CO gas sensitivity, $SnO_2$ added ZnO prepared. The electrical conductivities and dielectric constants decreased by increasing $SnO_2$ content in air. The electrical conductivities in 1000ppm CO atmosphere were larger than in dry air. The measured CO sensitivities were $1{\sim}15.2$ at $100^{\circ}C{\sim}480^{\circ}C$. The maximum CO sensitivity of 15mol% $SnO_2$ added ZnO was 15.2 at $305^{\circ}C$.

• Journal of Powder Materials
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• v.28 no.3
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• pp.239-245
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• 2021

The SnSe single crystal shows an outstanding figure of merit (ZT) of 2.6 at 973 K; thus, it is considered to be a promising thermoelectric material. However, the mass production of SnSe single crystals is difficult, and their mechanical properties are poor. Alternatively, we can use polycrystalline SnSe powder, which has better mechanical properties. In this study, surface modification by atomic layer deposition (ALD) is chosen to increase the ZT value of SnSe polycrystalline powder. SnSe powder is ground by a ball mill. An ALD coating process using a rotary-type reactor is adopted. ZnO thin films are grown by 100 ALD cycles using diethylzinc and H₂O as precursors at 100℃. ALD is performed at rotation speeds of 30, 40, 50, and 60 rpm to examine the effects of rotation speed on the thin film characteristics. The physical and chemical properties of ALD-coated SnSe powders are characterized by scanning and tunneling electron microscopy combined with energy-dispersive spectroscopy. The results reveal that a smooth oxygen-rich ZnO layer is grown on SnSe at a rotation speed of 30 rpm. This result can be applied for the uniform coating of a ZnO layer on various powder materials.

• Korean Journal of Metals and Materials
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• v.46 no.7
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• pp.443-448
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• 2008

Contact materials are used in many electrical devices. Ag-Cd alloy has been widely used in electrical part, because Ag-Cd alloy has a good wear resistance and stable contact resistance. But nowadays Ag-Cd alloy isn't being used because of environmental challenges. Currently new research is being done on ($Ag-SnO_2$ and $Ag-SnO_2-In_2O_3$) as an alternative solution to fix any remainly environmental challenges. However $In_2O_3$ is more expensive and Ag-Sn alloy has low wear resistance. According to our research data Zn has a similar physical and chemical property. In this work, so we changed and optimized the Zn oxide to over 4 and added Sn oxide ratio 0.5, 1.0, 1.5wt%. Conclusions from the data recorded from the experiment of $Ag-ZnO-SnO_2$ are as follows.

• Journal of the Korean Ceramic Society
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• v.50 no.4
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• pp.288-293
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• 2013

Zn-In-Sn-O films were prepared at room temperature by combinatorial RF-magnetron co-sputtering system. The cationic contents of the films were varied using a compositionally combinatorial technique. The effects of the oxygen partial pressure and film compositionon the structural and electrical properties were investigated. The Zn-In-Sn-O films deposited at Ar gas atmosphere showed an amorphous phaseirrespective of the film composition. However, the amorphous Zn-In-Sn-O films with a Zn content below 30.0 at% were converted into a bixbyite type-ITO polycrystalline phase with an increase in the oxygen partial pressure. The resistivity, carrier concentration, and Hall mobility were strongly affected by the oxygen partial pressure and chemical composition of the film. At sufficiently high carrier densities above $5{\times}10^{18}cm^{-3}$, the conduction behavior of amorphous Zn-In-Sn-O film changes from thermally activated to degenerate band conduction accompanied with high mobility.

• Proceedings of the Korean Ceranic Society Conference
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• 2002.10a
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• pp.107.2-107
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• 2002

• Proceedings of the Materials Research Society of Korea Conference
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• 2002.11a
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• pp.162-162
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• 2002

• Korean Journal of Metals and Materials
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• v.48 no.2
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• pp.169-174
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• 2010

A micro gas sensor for formaldehyde (HCHO) gas was fabricated by using MEMS (Micro Electro Mechanical System) technology and the sol-gel process. The sensing materials of the $SnO_2$-ZnO system were synthesized by the sol-gel method. The crystal structure and thermal analysis of the $SnO_{2}$-ZnO were characterized by XRD and DSC-TGA. The fabricated gas sensors were tested at various gas concentrations (0.5~5.0 ppm) and different operation temperatures ($350{\sim}550^{\circ}C$). The $SnO_2$-10 mol%ZnO sensor showed the highest sensitivity ($R_s=0.24$) for 1.0 ppm-formaldehyde at $500^{\circ}C$ and response time (90% saturation time) was within 20 seconds.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2013.05a
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• pp.165-165
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• 2013

브랜치 구조의 나노섬유는 기존의 1-d 나노 구조보다 표면적이 넓으며 이로 인해 가스 센서 특성 향상에 응용 할 수 있다. $SnO_2$ stem nanowire구조에 ZnO branch를 성장시킴으로서 효과적인 가스 센싱을 위한 나노 브랜치 구조의 합성을 하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.233-233
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• 2014

InGaZnO 박막트랜지스터(TFT)는 기존의 널리 사용되던 비정질 실리콘보다 높은 전하이동도와 Ion/off, 우수한 균일성과 신뢰성의 장점으로 최근 AMOLED양산에 적용되기 시작 하였다. 그러나 60인치 이상의 대면적 디스플레이와 초고해상도의 성능을 동시에 만족하기 위해 10 cm2/Vs정도의 전하이동도를 가지는 InGaZnO로는 한계가 있어 30 cm2/Vs 이상의 전하이동도를 가지는 물질의 연구가 필요하다. 연구에서는 높은 전하이동도를 만족하기 위해 InO2를, 우수한 신뢰성을 가지는 SnO2를 포함하는 InZnSnO로 실험을 진행하였다. 스퍼터링 시스템에서 ITO 타겟과 ZTO 타겟을 사용하여 동시증착법으로 채널을 증착하였고, 산소 분압 변화시에 IZTO TFT 소자 특성의 의존성을 평가하였다. Ar : O2=10 : 0 일 때와 Ar : O2=7 : 3 일 때의 이동도가 각각 12.6cm2/Vs, 19.7cm2/Vs로 산소 비율이 증가함에 따라 전하이동도가 증가하였다. 기존 IGZO 산화물 반도체에서는 산소 비율이 증가하면 산소공공(VO) 농도감소로 인해 전하이동도가 감소한다. 이는 전하농도가 증가하면 전하이동도가 증가하는 percolation 전도기구로 이해할 수 있다. 그러나 본 IZTO 물질에서는 산소비율 증가에 따라 오히려 전하이동도가 증가하였는데, 이는 IZTO 반도체에 함유된 Sn 이온의 가전자상태가 +2/+4가의 상대적 비율이 산소농도에 따라 의존하기 때문인 것으로 분석되었다.