• Journal of the Korean Vacuum Society
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• v.10 no.3
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• pp.350-355
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• 2001

We have investigated characteristics of ZnSe epilayer grown by molecular beam epitaxy(MBE) on semi-insulating(SI) GaAs by using surface photovoltage(SPV). The measurements of SPV were performed with illumination intensity and modulation frequency. The bandgap energy of ZnSe epilayer was determined from derivative surface photovoltage (DSPV). The five states were observed at room temperature(RT), and those states relate to the impurity and defect formed hetero-interface of ZnSe and GaAs during the sample growth. The observed states represented as a tendency of typical extrinsic transition on the increasing illumination intensity. The 1s and 2s signals related to the excitonic absorption were not observed at RT, but those were presented with the splitted of two peaks in the SPV at 80 K. From the modulation frequency dependence, we obtained the junction conductance and capacitance of the sample.

• Korean Journal of Materials Research
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• v.27 no.9
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• pp.459-465
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• 2017

Nano-sized Zinc selenide (ZnSe) powder was successfully synthesized using Zn and Se precursors in a hydrothermal process. Temperature for the synthesis was varied from $95^{\circ}C$ to $180^{\circ}C$ to evaluate its influence on the microstructural properties of the synthetic particles. ZnSe powder thus fabricated was characterized using various analytical tools such as SEM, XRD, TEM and UV-Vis methods. Two types of ZnSe particles, that is, the precipitated particle and the colloidal particles, were identified in the analysis. The precipitated particles were around 100 nm in average size, whereas the average size of the colloidal particles was around 20 nm. The precipitated particles made at $150^{\circ}C$ and $180^{\circ}C$ were found to be a single phase of ZnSe; however, an inhomogeneous phase was obtained at the lower synthesis temperature of $95^{\circ}C$, suggesting that the temperature for the synthesis should be over $100^{\circ}C$. The precipitated particles were inactive in the UV-Vis absorption investigation, whereas the colloidal particles showed that absorptions occurred at 380 nm in the UV-Vis spectrum.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.471-471
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• 2011

1차원 나노 와이어는 나노 디바이스를 구현하는데 있어 중요한 요소로 연구되고 있다. 하지만 나노 와이어를 바람직한 위치에 선택적으로 배열하는 부분은 해결할 과제로 남아있다. DNA 분자가 가지고 있는 음의 전하를 띄는 phosphate backbone과 자기조립 특성은 이러한 문제점들을 해결할 수 있는 중요한 요소이다. 본 연구에서는 DNA 분자 형틀을 이용해서 CdSe/ZnS core-shell 나노입자의 pH 의 변화에 따른 표면 전위 변화를 이용하여 선택적 위치의 나노입자 배열을 통한 나노 와이어를 제작하는 연구를 하였다. 1-step 방법을 이용하여 합성한 CdSe/ZnS core-shell 나노입자를 무극성 용매인 chloroform 용액에 분산시키고 dimethylaminoethanethiol (DMAET) 를 이용하여 표면을 양전하로 치환하였다. 그리고 치환한 CdSe/ZnS 나노입자 용액에 HCl 을 이용해서 pH 7, 6, 5, 4로 변화를 주어 zeta potential 변화를 측정하였고 3-aminopropyltriethoxysilane (APTES) 코팅된 Si 기판에 ${\lambda}$-DNA를 정렬하고 이를 형틀로 이용하여 CdSe/ZnS 나노입자를 정렬하는 실험을 하였고 FE-SEM 을 이용하여 측정하였다. 그 결과 CdSe/ZnS 나노입자의 pH 값이 작아지면서 전위가 커짐에 따라서 APTES 코팅된 기판 표면에 나노입자들이 반응하는 것보다 음전하를 띄는 ${\lambda}$-DNA의 phosphate backbone에 반응하는 것이 커짐에 따라 DNA 분자 형틀에 선택적으로 나노입자가 배열되는 것을 확인하였다.

• Journal of the Semiconductor & Display Technology
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• v.7 no.4
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• pp.19-22
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• 2008

Thin film has been an increasing important subject of intensive research, owing to the fact that these films possess desirable optical, electrical and electrochemical properties for uses in many semi-conducting nano-crystal applications, such as light-emitting diodes, lasers and solar cell applications. Here, ZnSe thin films were deposited by electrochemical method for the applications of light emitting diode. Electrochemical deposition of ZnSe thin film is not easy, because of the high difference of reduction potential between zinc ion and selenium acid. In order to handle the band gap of ZnSe crystal thin films easily, electrochemical methods are promising to manufacture these films economically. Therefore we have investigated the present study to characterize zinc selenide thin films deposited on ITO glass plates electrochemically. The luminescent properties of ZnSe films have been evaluated by UV-Vis spectrometer and luminescence spectrometer. And the morphology of the film surface has been discussed qualitatively from SEM images.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.7
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• pp.443-449
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• 2018

We investigated the temperature-dependent photoluminescence spectroscopy of colloidal InZnP/ZnSe/ZnS (core/shell/shell) quantum dots with varying ZnSe and ZnS shell thickness in the 278~363 K temperature range. Temperature-dependent photoluminescence of the InZnP-based quantum dot samples reveal red-shifting of the photoluminescence peaks, thermal quenching of photoluminescence, and broadening of bandwidth with increasing temperature. The degree of band-gap shifting and line broadening as a function of temperature is affected little by shell composition and thickness. However, the thermal quenching of the photoluminescence is strongly dependent on the shell components. The irreversible photoluminescence quenching behavior is dominant for thin-shell-deposited InZnP quantum dots, whereas thick-shelled InZnP quantum dots exhibit superior thermal stability of the photoluminescence intensity.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.86.2-86.2
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• 2015

Cu2ZnSn(S,Se)4 thin film solar cells have been fabricated using sputtered Cu/Sn/Zn metallic precursors on Mo coated sodalime glass substrate without using a toxic H2Se and H2S atmosphere. Cu/Sn/Zn metallic precursors with various thicknesses were prepared using DC magnetron sputtering process at room temperature. As-deposited metallic precursors were sulfo-selenized inside a graphite box containing S and Se pellets using rapid thermal processing furnace at various sulfur to selenium (S/Se) compositional ratio. Thin film solar cells were fabricated after sulfo-selenization process using a 65 nm CdS buffer, a 40 nm intrinsic ZnO, a 400 nm Al doped ZnO, and Al/Ni top metal contact. Effects of sulfur to selenium (S/Se) compositional ratio on the microstructure, crystallinity, electrical properties, and cell efficiencies have been studied using X-ray diffraction, Raman spectroscopy, field emission scanning electron microscope, I-V measurement system, solar simulator, quantum efficiency measurement system, and time resolved photoluminescence spectrometer. Our fabricated Cu2ZnSn(S,Se)4 thin film solar cell shows the best conversion efficiency of 9.24 % (Voc : 454.6 mV, Jsc : 32.14 mA/cm2, FF : 63.29 %, and active area : 0.433 cm2), which is the highest efficiency among Cu2ZnSn(S,Se)4 thin film solar cells prepared using sputter deposited metallic precursors and without using a toxic H2Se gas. Details about other experimental results will be discussed during the presentation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.3
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• pp.151-155
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• 2014

We have developed quantum dot light emitting diodes (QD-LEDs) using a InP/ZnSe/ZnS multi-shell QD emission layer. The hybrid structure of organic hole transport layer/QD/organic electron transport layer was used for fabricating QD-LEDs. Poly(4-butylphenyl-diphenyl-amine) (poly-TPD) and tris[2,4,6-trimethyl-3-(pyridin-3-yl)phenyl]borane (3TPYMB) molecules were used as hole-transporting and electron-transporting layers, respectively. The emission, current efficiency, and driving characteristics of QD-LEDs with 50, 65 nm thick 3TPYMB layers were investigated. The QD-LED with a 50 nm thick 3TPYMB layer exhibited a maximum current efficiency of 1.3 cd/A.

• 한국신재생에너지학회:학술대회논문집
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• 2007.06a
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• pp.257-260
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• 2007

In this study, $CuInSe_{2}$ (CISe) and $CuInZnSe_{2}$ (CIZSe) thin films were prepared on Corning 1737 glass by radio frequency (RF) magnetron sputtering from binary chalcogenide mixed powder targets. The targets were initially prepared by mixing appropriate weights of CuSe, InSe powder and various ZnSe contents. From the film bulk analysis result, it is observed that Zn concentration in the films increases proportionally with the addition of ZnSe in the sputtering targets. Under optimized conditions, CISe and CIZSe thin films grow as a chalcopyrite structure with strong (112), (220/204) and (312/116) reflections. Films are found to exhibit a high absorption coefficient of $10^{4}$ $cm^{-1}$. An increasing of optical band gap from 1.0 eV (CISe) to 1.25 eV (CIZSe) is found to be proportional with an increasing of Zn concentration as expected. All films have a p-type semiconductor characteristic with a carrier concentration in the order of 1014 $cm^{-3}$, a mobility about $10^{1}$ $cm^{2{\cdot}-1}{\cdot}s^{-1}$ and a resistivity at the range of $10^{2}-10^{6}$ W${\cdot}$m.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.3
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• pp.178-183
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• 2014

Recently, various type of nanomaterials such as nanorod, nanowire, nanotube and their core/shell nanostructures have attracted much attention in photocatalyst due to their unique properties. Among them, Type-II core/shell heterostructures have extensively studied because it has exhibited improved electrical and optical properties against their single-component nanostructure. Such structures are expected to offer high absorption efficiency and fast charge transport due to their stepwised energetic combination and large internal surface area. Thus, it has been considered as potential candidates for high efficient photocatalytic activity. In this work, we introduce a novel chemical conversion process to synthesize Type-II ZnO/ZnSe core/shell heterostructures. A plausible conversion mechanism to ZnO/ZnSe core/shell heterostructres was proposed based on SEM, XRD, TEM and XPS analysis. The ZnO/ZnSe heterostructures exhibited excellent photocatalytic activity toward the decomposition of RhB dye compared to the ZnO nanorod arrays due to enhanced light absorption and the type-II cascade band structure.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.2
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• pp.271-275
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• 1997

We have successfully grown Cl-doped ZnSe epitaxial layers on GaAs(100) sub-strates by HWE using $ZnCl_2$ as a doping source. The Cl-doped ZnSe layers showed mirrorlike morphology and good crystallinity. It has been found that the layer exhibited an n-type conduction with low resistivity. The carrier concentration is, obtained about $10^{16}\textrm {cm}^{-3}$, where a resistivity reached 10 $\Omega \textrm {cm}$. The layer with an appropriate doping level exhibited blue photoluminescence at room temperature. The strong blue PL was obtained at the hall mobility of $100^2\textrm {cm}$/Vㆍsec.