• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.256-256
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• 2008

We report epitaxial growth of ZnO thin films on (100) single-crystalline $LaAlO_3$ (LAO) substrates using pulsed laser deposition (PLD) at different substrate temperatures (400~$800^{\circ}C$). The structural and electrical properties of the films have been investigated by means of X-ray diffraction (XRD), atomic force microscope (AFM), transmission line method (TLM). The poly-crystalline of $\alpha$- and c-axis oriented ZnO film was formed at lower deposition temperature ($T_s$) of $400^{\circ}C$. At higher $T_s$, however, the films exhibit single-crystalline of $\alpha$-axis orientation represented by ZnO[$\bar{1}11$ || LAO <001>. The electrical properties of ZnO thin films depend upon their crystalline orientation, showing lower electrical resistivity values for $\alpha$-axis oriented ZnO films.

• Journal of Integrative Natural Science
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• v.3 no.1
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• pp.54-59
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• 2010

A stoichiometric mixture of evaporating materials for $ZnIn_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $ZnIn_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $ZnIn_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $9.41{\times}10^{16}cm^{-3}$ and $292cm^2/v{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $ZnIn_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $Eg(T)=1.8622eV-(5.23{\times}10^{-4}eV/K)T^2/(T+775.5K)$.

• Journal of the Korean Ceramic Society
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• v.39 no.7
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• pp.649-656
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• 2002

In situ patterned zinc oxide thin films were prepared by precipitation of Zn(NO$_3$)$_2$ aqueous solution containing urea and by microcontact printing using Self-Assembled Monolayers(SAMs) on A1/SiO$_2$/Si substrates. The visible precipitation of Zn(OH)$_2$ that was formed in the Zn(NO$_3$)$_2$ aqueous solution containing urea was enhanced with an increase of the reaction temperature and the amount of urea. As the reaction time of Zn(NO$_3$)$_2$ with urea was prolonged, the thickness and grain size of Zn(OH)$_2$ thin layers were increased, respectively. The optimum precipitation condition was at 80$\^{C}$ for 1 h for the solution with the ratio of Zn(NO$_3$)$_2$ to urea of 1 : 8. Homogeneous ZnO thin films were fabricated by the heat treatment of 600$\^{C}$ for 1 h of Zn(OH)$_2$ precipitation on Al/SiO$_2$/Si substrate. This was available to the in-situ patterned ZnO thin films with uniform grain size. Hydrophobic SAM, Octadecylphosphonic Acid(OPA) and hydrophilic SAM, 2-Carboxyethylphosphonic Acid(CPA) were applied on the Al/SiO$_2$/Si substrate by microcontact printing method. In situ patterned ZnO thin film was successfully prepared by the heat treatment of Zn(OH)$_2$ precipitated on the surface of hydrophilic SAM, CPA.

• The Journal of the Korea institute of electronic communication sciences
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• v.16 no.2
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• pp.233-240
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• 2021

For the production of neodymium-doped zinc sulfide thin films in various amounts, zinc sulfide and neodymium were simultaneously deposited using an RF magnetron sputtering equipment to form a thin films, and rapid thermal annealing was performed at 400℃ for 30 minutes as a post-treatment process. The structure, shape, and optical properties of ZnS thin films having various neodymium doping contents (0.35at.%, 1.31at.%, 1.82at.% and 1.90at.%) were studied. The X-ray diffraction pattern was grown to a (111) cubic structure in all thin films. The surface and structural morphology of the thin films due to the neodymium doping content was explained through SEM and AFM images. Only elements of Zn, S, and Nd that do not contain other impurities were identified through EDAX. The transmittance and band gap of the prepared thin films were confirmed using the UV-vis spectrum.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.181-185
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• 2007

We report on our material and process research on ZnO:Al films and on our investigations on wet chemical etching using a variety of etching solutions. We achieve resistivity as low as $750{\mu}{\Omega}cm$ for ZnO:Al films with film thickness of 140 nm. Etching with phosphorous acid allows for accurate fine patterning of the ZnO:Al films on glass substrates.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.143-143
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• 2013

DC Arc Plasmatron을 이용하여 대기압에서 ZnO 박막을 형성하였다. Zinc acetyl acetonate, diethylzinc, zinc power들을 precursor로 사용하여 박막을 형성하였다. 100 nm/min에 달하는 박막 형성 속도가 관측되었다. 기판의 온도와 압력, 플라즈마트론의 파워 등에 따라 박막은 amorphous와 poly-crystal 상을 나타내었다. XRD, SEM, XPS 등을 이용하여 박막의 특성을 조사하였고, 박막의 전기전도도를 증가시키기 위하여 수소분위기에서의 annealing 효과를 조사하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.312-312
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• 2009

본 연구에서는 Thermal evaporator(저항 가열 식 진공 증착법) 장비를 활용하여 ZnS/$Na_3AlF_6$/ZnS/Cu-$0.25\lambda$, ZnS/$CaF_2$/ZnS/Cu-$0.25\lambda$의 다층 박막을 glass 기판위에 증착하였다. 증착 전에 EMP(Essential Macleod Program)을 활용하여 광학적 특성을 simulation하였으며 다층 박막 제작 후 Spectrophotometer를 사용하여 반사율 및 색상을 CIE $L^*a^*b^*$ 좌표에 표시하여 고 굴절 물질에 따른 광학적 특성을 EMP simulation과 비교하였다. AES depth profile을 분석하여 막의 두께 및 층간 확산여부에 관하여 관측 하였다. 저굴절 물질을 Na3AlF6로 사용하였을 경우 simulation과 결과 값 모en purple 계통의 색상을 나타냈으며 CaF2를 사용하였을 경우 simulation은 purple 계통의 색상, 결과값은 red-yellow 계통의 색상으로 나타났다.

• 한국신재생에너지학회:학술대회논문집
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• 2006.06a
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• pp.152-153
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• 2006

The new approach to buffer layer design for CIGS solar cells that permitted to reduce the buffer absorption losses in the short wavelength range and to overcome the disadvantages inherent to Cd-free CIGS solar cells was proposed. A chemical bath deposition method has been used to produce a high duality buffer layer that comprises thin film of CdS and Zn-based film. The double layer was grown on either ITO or CIGS substrates and its morphological, structural and optical properties were characterized. The Zn-based film was described as the ternary compound $ZnS_x(OH)_y$. The composition of the $ZnS_x(OH)_y$ layer was not uniform throughout its thickness. $ZnS_x(OH)_y$/CdS/substrate region was a highly intermixed region with gradually changing composition. The short wavelength cut-off of double layer was shifted to shorter wavelength (400nm) compared to that (520 nm) for the standard CdS by optimization of the double buffer design. The results show the way to improve the light energy collection efficiency of the nearly cadmium-free CIGS-based solar cells.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.305-306
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• 2006

Ga-doped and Al-doped ZnO thin films were fabricated via a sol-gel technique and electrical and optical properties of the films were investigated. Film deposition was performed by spin coating at 4000 rpm for 30 s on $SiO_2$ glass substrate FE-SEM was used to obtain the surface morphology images and the film thickness Four-point probe and UV-VIS spectrophotometer were used to measure the sheet resistance and the optical transparency, respectively.

• Journal of the Korean Vacuum Society
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• v.17 no.6
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• pp.538-543
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• 2008

Recently a nano-scale diamond is possible to manufacture forms of powder(below 100 nm) by new processing of explosion or deposition method. Using a sintering of nano-scale diamond is possible to manufacture of grinding tools. We have need of a processing development of coated uniformly inorganic to prevent an abnormal grain growth of nano-crystal and bonding obstacle caused by sintering process. This paper, in order to improve the sintering property of nano-scale diamond, we coated ZnO thin films(thickness: $20{\sim}30\;nm$) in a vacuum by ALD(atomic layer deposition) Economically, in order to deposit ZnO all over the surface of nano-scale diamond powder, we used a new modified fluidized bed processing replaced mechanical vibration effect or fluidized bed reactor which utilized diamond floating owing to pressure of pulse(or purge) processing after inserted diamond powders in quartz tube(L: 20 mm) then closed quartz tube by porosity glass filter. We deposited ZnO thin films by ALD in closed both sides of quartz tube by porosity glass filter by ALD(precursor: DEZn($C_4H_{10}Zn$), reaction gas: $H_2O$) at $10^{\circ}C$(in canister). Processing procedure and injection time of reaction materials set up DEZn pulse-0.1 sec, DEZn purge-20 sec, $H_2O$ pulse-0.1 sec, $H_2O$ purge-40 sec and we put in operation repetitive 100 cycles(1 cycle is 4 steps) We confirmed microstructure of diamond powder and diamond powder doped ZnO thin film by TEM(transmission electron microscope) Through TEM analysis, we confirmed that diamond powder diameter was some $70{\sim}120\;nm$ and shape was tetragonal, hexagonal, etc before ALD. We confirmed that diameter of diamond powders doped ZnO thin film was some $70{\sim}120\;nm$ and uniform ZnO(thickness: $20{\sim}30\;nm$) thin film was successfully deposited on diamond powder surface according to brightness difference between diamond powder and ZnO.