• Title/Summary/Keyword: ZnO-Si-ZnO multi-layer

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Characteristics Investigation of ZnO-Si-ZnO Multi-layer Thin Films Fabricated by Pulsed Laser Deposition (펄스 레이저 증착법에 의해 제작된 ZnO-Si-ZnO 다층 박막의 특성 연구)

  • 강홍성;강정석;심은섭;방성식;이상렬
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.1
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    • pp.65-69
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    • 2003
  • ZnO-Si-ZnO multi-layer thin films have been deposited by pulsed laser deposition (PLD). And then, the films have been annealed at 300$^{\circ}C$ in oxygen ambient pressure. Peak positions of ultraviolet (UV) and visible region were changed by addition of Si layer. Mobility of the films was improved slightly than ZnO thin film without Si layer. The structural property changed by inserting intermediate Si layer in ZnO thin film. The optical properties and structural properties of ZnO-Si-ZnO multi-layer thin films were characterized by PL(Photoluminescence) and XRB(X-ray diffraction) method, respectively. Electrical properties were measured by van der Pauw Hall measurements

Characteristics analysis of ZnO-Si-ZnO multi-layer thin films by pulsed laser deposition (펄스 레이저 증착법에 의해 제작된 ZnO-Si-ZnO 다층 박막의 특성 분석)

  • Kang, Hong-Seong;Kang, Jeong-Seok;Shim, Eun-Sub;Pang, Seong-Sik;Lee, Sang-Yeol
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07b
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    • pp.1057-1059
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    • 2002
  • ZnO-Si-ZnO multi-layer thin films have been deposited by pulsed laser deposition (PLD). And then, the films have been annealed at $300^{\circ}C$ in oxygen ambient pressure. Electrical properties of the films were improved slightly than ZnO thin film without Si layer. Also, the optical and structural properties changed by Si layer in ZnO thin film. The optical and structural properties of Si-doped ZnO thin films were characterized by PL(Photoluminescence) and XRD(X-ray diffraction method) respectively. Electrical properties were measured by van der Pauw Hall measurements.

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The Optical Properties of Si3N4/SnZnO/AZO/Ag/Ti/ITO Multi-layer Thin Films with Laminating Times (Si3N4/SnZnO/AZO/Ag/Ti/ITO 다층 박막의 적층 횟수에 따른 광학적 특성)

  • Lee, Sang-Yun;Jang, Gun-Eik
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.28 no.1
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    • pp.7-11
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    • 2015
  • In this study, $Si_3N_4$/SnZnO/AZO/Ag/Ti/ITO multi-layer film were prepared on glass substrate by DC/RF magnetron sputtering method. To prevent interfacial reaction between Ag and ITO layer, Ti buffer layer was inserted. Optical properties and sheet resistance were studied depending on laminating times of each multi-layered film especially in visible ray. The simulation program, EMP (essential macleod program), was adopted and compared with experimental data to expect the experimental result. It was found out that the transmittance of the first stacked $Si_3N_4$/SnZnO/AZO/Ag/Ti/ITO multi-layer film was more than 90%. However, with increasing stacking times, the optical properties of $Si_3N_4$/SnZnO/AZO/Ag/Ti/ITO multi-layer film get worse. Consequently, Ti layer is good for oxidation barrier, but too many uses of this layer may have an adverse effect to optical properties of TCO film.

Effects of SiO$_2$ Buffer Layer on Properties of ZnO thin films and Characteristics of SAW Devices with a Multilayered Configuration of IDT/ZnO/SiO$_2$/Si (SiO$_2$ 완충층이 ZnO 박막의 물성 및 IDT/ZnO/SiO$_2$/Si 다층막 구조 표면탄성파 소자의 특성에 미치는 영향)

  • Lee, Jin-Bok;Lee, Myeong-Ho;Park, Jin-Seok
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.51 no.9
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    • pp.417-422
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    • 2002
  • ZnO thin films were deposited on various substrates, such as Si-(111), SiO$_2$(5000 $\AA$ by thermal CVD)/Si-(100), and SiO$_2$(2000 $\AA$ by RF sputtering)/Si-(100). The (002)-orientation, surface morphology and roughness, and electrical resistivity of deposited films were measured and compared in terms of substrate. Surface acoustic wave(SAW) filters with a multilayered configuration of IDT/ZnO/SiO$_2$/Si were also fabricated and the IDT was obtained using a lift-off method. From the frequency-response characteristics of fabricated devices, the insertion loss and side-lobe rejection were estimated. The experimental results showed that the (002)-oriented growth nature of ZnO films, which played a crucial role of determining the characteristic of SAW device, was strong1y dependent upon the SiO$_2$buffer.

Real time control of the growth of Ge-Sb-Te multi-layer film as an optical recording media using in-situ ellipsometry (In-situ ellipsometry를 사용한 광기록매체용 Ge-Sb-Te 다층박막성장의 실시간 제어)

  • 김종혁;이학철;김상준;김상열;안성혁;원영희
    • Korean Journal of Optics and Photonics
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    • v.13 no.3
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    • pp.215-222
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    • 2002
  • Using an in-situ ellipsometer, we monitored the growth curve of optical recording media in real time. For confirmation of the thickness control using in-situ ellipsometry, we analyzed the deposited multi-layer sample made of Ge-Sb-Te alloy film and ZnS-Si0$_2$ dielectric films using an exsitu spectroscopic ellipsometer. The target material in the first sputtering gun is ZnS-SiO$_2$ as the protecting dielectric layer and that in the second gun is Ge$_2$sb$_2$Te$_{5}$ as the receding layer. While depositing ZnS-SiO$_2$, Ge$_2$Sb$_2$Te$_{5}$ and ZnS-SiO$_2$ films on c-Si substrate in sequence, we measured Ψ $\Delta$ in real time. Utilizing the complex refractive indices of Ge$_2$Sb$_2$Te$_{5}$ and ZnS-SiO$_2$ obtained from the analysis of spectroscopic ellipsometry data, the evolution of ellipsometric constants Ψ, $\Delta$ with thickness is calculated. By comparing the calculated evolution curve of ellipsometric constants with the measured one, and by analyzing the effect of density variation of the Ge$_2$Sb$_2$Te$_{5}$ recording layer on ellipsometric constants with thickness, we precisely monitored the growth rate of the Ge-Sb-Te multilayer and controlled the growth process. The deviation of the real thicknesses of Ge-Sb-Te multilayer obtained under the strict monitoring is post confirmed to be less than 1.5% from the target structure of ZnS-SiO$_2$(1400 $\AA$)IGST(200 $\AA$)$\mid$ZnS-SiO$_2$(200$\AA$).(200$\AA$).

The Preferred Orientation of CdSe and CdS Thin Films on the AlOx and SiO2 Templates (AlOx와 SiO2 형판위 CdSe와 CdS 박막의 우선방위(Preferred Orientation) 특성)

  • Lee, Young-Gun;Chang, Ki-Seog
    • Journal of the Korea Institute of Military Science and Technology
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    • v.15 no.4
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    • pp.502-506
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    • 2012
  • In order to find the structural characteristics of the thin films of group II-VI semiconductor compounds compared with those of powder materials, films were made of 4 powders of ZnS, CdS, CdSe, and CdTe(Aldrich), each with 99.99 % purity. For the ZnS/CdS multi-layers, the ZnS layer was coated over the CdS layer on an $AlO_x$ membrane, which served as a protective layer within a vacuum at the average speed of 1 ${\AA}$/sec. After studying the structures of the group II-VI semiconductor thin films by using X-ray spectroscopy, we found that the ZnS, ZnS/CdS, CdS, and CdSe films were hexagonal and exhibited some degree of preferred orientation. Also, the particles of the thin films of II-VI semiconductor compounds proved to be more homogeneous in size compared to those of the powder materials. These results were further verified through scanning electron microscopy(SEM), EDX analysis, and powder and thin film X-ray diffraction.

Resonance Characteristic Improvement of ZnO-Based FBAR Devices Fabricated on Thermally Annealed Bragg Reflectors

  • Yim, Mun-Hyuk;Kim, Dong-Hyun;Linh Mai;Giwan Yoon
    • Journal of information and communication convergence engineering
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    • v.1 no.4
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    • pp.199-204
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    • 2003
  • In this paper, we present the thermal annealing effects of the W/$SiO_2$ multi-layer reflectors in ZnO-based FBAR devices with cobalt (Co) electrodes in comparison with those with aluminum (Al) electrodes. Various thermal annealing conditions have been implemented on the W/$SiO_2$ multi-layer reflectors formed on p-type (100) silicon substrates. The resonance characteristics could be significantly improved due to the thermal annealing and were observed to depend strongly on the annealing conditions applied to the reflectors. Particularly, the FBAR devices with the W/$SiO_2$ multi- layer reflectors annealed at $400^{\circ}C$/30min have shown superior resonance characteristics in terms of return loss and quality-factor (Q-factor). In addition, the use of Co electrodes has resulted in further improvement of the resonance characteristics as compared with the Al electrodes. As a result, the combined use of both the thermal annealing and Co electrodes seems very useful to more effectively improve the resonance characteristics of the FBAR devices with the W/$SiO_2$ multi-layer reflectors.

Effects of Multi-layer Bragg Reflectors on ZnO-based FBAR Devices

  • Lee, Jae-Young;Mai, Lihn;Pham, Van-Su;Yoon, Gi-Wan
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2007.06a
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    • pp.441-444
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    • 2007
  • In this paper, the resonance characteristics of ZnO-based film bulk acoustic resonator (FBAR) devices with high-quality multi-layer reflectors are proposed. The ultrathin Cr film $(300\;\AA-thick)$ between $SiO_2$ film and W film is formed by a sputtering-deposition in order to enhance the adherence at their interfaces. The resonance frequency was observed to vary with the number of the reflectors. This seems to be attributed to the change in the effective thickness of the ZnO film. Also, increasing the number of layers has led to a significant improvement of the series/parallel quality factor.

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Manometer Scale Mark Formation using Thermal Reaction For Storage Application (열 반응을 이용한 나노사이즈 마크형성)

  • Jung, Moon-Il;Kim, Joo-Ho;Hwang, In-Oh;Kim, Hyun-Ki;Bae, Jae-Cheol;Park, In-Sik;Kuwahara, Masashi;Tominaga, Junji
    • Transactions of the Society of Information Storage Systems
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    • v.1 no.2
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    • pp.127-131
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    • 2005
  • We report a nanometer scale mark formation using a $PtO_x$ thin film or a TbFeCo rare-earth transition metal film and the mechanism. The multi-layer samples($ZnS-SiO_2/PtOx/ZNS-SiO_2,\;ZnS-SiO_2/TbFeCo/ZnS-SiO_2$) were prepared with a magnetron sputtering method on a polycarbonate or a glass substrate. By laser irradiation of approximately a few nanoseconds, nanometer scale marks were fabricated. During the fabrication process, the thin films were thermally reacted or inter-diffused during the laser irradiation. 75 nm bubble marks in the PtOx multi-layer sample by an approximately 4-ns laser irradiation. Inside the bubble mark, Pt particles with a few nanometer sizes are distributed. The $50{\sim}100$ nm bubble marks in the TbFeCo multi-layer sample by a few nanosecond laser irradiations. We will report the detail structure of the samples, the bubble mark formation process and the mechanism.

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Improvement of Resonant Characteristics due to the Thermal Annealing Effect in Multi-layer Thin-film SMR Devices (Thermal Annealing 효과에 의한 다층 박막 FBAR 소자의 공진 특성 개선)

  • ;;Mai Linh
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2003.10a
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    • pp.633-636
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    • 2003
  • In this work, We, for the first time, present the effects of the thermal annealing of the W/SiO$_2$ multi-layer quarter wavelength reflectors on the resonant properties of the ZnO-based SMR devices. In order to improve the resonant properties of the SMR devices, we annealed thermally the reflectors formed on a silicon substrate using a RF magnetron sputtering technique. As a result, the resonant properties of the SMR devices were observed to strongly depend on the annealing conditions applied to the reflectors. The SMR devices with the reflectors annealed at 40$0^{\circ}C$/30min showed excellent resonance properties as compared to those with the reflectors non-annealed (as-deposited). The newly proposed simple thermal annealing process will be very useful to more effectively improve the resonant properties of the future SMR devices with W/SiO$_2$ multi-layer quarter wavelength reflectors.

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