• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.292-293
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• 2006

$ZnNb_2O_6$ ceramics were sintered under the presence of zinc-borosilicate(ZBS) glass and resultant microwave dielectric properties were investigated with a view to applying the composition to LTCC technology. The addition of 10~30 wt% ZBS glass ensured successful sintering below $900^{\circ}C$. In general, increased addition of ZBS glass increased sinterability but it decreased the dielectric properties significantly due to the formation of an excessive liquid and second phases. The sintered $ZnNb_2O_6$ ceramics at $900^{\circ}C$ with 25 wt% ZBS glass demonstrated 15.8 in dielectric constant(${\varepsilon}_r$), 5,400 in quality factor($Q{\times}f_0$), and $-98\;ppm/^{\circ}C$ in temperature coefficient of resonant frequency(${\tau}_f$).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.138-141
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• 2004

[ $MnO_2$ ]가 첨가된 $0.9Pb(Zr_{0.5}Ti_{0.5})O_3-0.2Pb[(Zn_{0.8}Ni_{0.2})_{1/3}Nb_{2/3}]O_3$(0.8PZT-0.2PZNN) 세라믹스는 그 압전특성과 유전특성이 뛰어나지만 $1000^{\circ}C$ 이하의 낮은 소결 온도에서는 소결되지 않는다. $1000^{\circ}C$이하의 낮은 소결온도에서 소결하기 위해 CuO를 첨가한 결과, 소결온도 $920^{\circ}C$에서 소결성은 우수하였으나 그 압전 특성의 저하가 두드러졌다. 이는 XRD에서 확인한 결과에 따르면 CuO의 첨가가 우수한 MPB 조성으로 판명된 $MnO_2$ 가 첨가된 0.8PZT-0.2PZNN 세라믹스의 결정구조를 Rhombohedral 구조로 바꾸기 때문인 것으로 보였으며 이러한 문제는 PZNN의 비율을 조절하여 0.875PZT-0.125PZNN 세라믹스를 선택함으로 인해 해결할 수 있었다. 그러나 여전히 낮은 $Q_m$값을 높이기 위해서 $Al_2O_3$를 첨가하였고 그 결과 시편의 tetragonality 감소와 $Q_m$값의 증가를 확인할 수 있었으나 그 첨가량이 0.2wt% 이상일 경우에는 밀도의 감소로 인한 압전특성의 저하가 나타났다. 밀도의 향상을 위해 Zn and Ni excess 조성을 선택하였고 그 결과 0.5wt% $MnO_2$와 0.2wt% CuO 그리고 0.3wt% $Al_2O_3$를 첨가한 0.875PZT-0.125PZNN 세라믹스(Zn and Ni excess 조성)를 $920^{\circ}C$에서 소결한 경우 $k_p=0.581,\;Q_m=809,\;d_{33}=345\;pC/N\;and\;{\varepsilon}_{33}/{\varepsilon}_0=1345$의 빼어난 압전 및 유전특성과 $330^{\circ}C$의 높은 $T_c$를 보였고 그 조성의 vibration velocity는 약4.5 m/s로 나타났다.

• Korean Journal of Materials Research
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• v.29 no.10
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• pp.586-591
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• 2019

This study describes the doping effect of $Yb_2O_3$ on microstructure, electrical and dielectric properties of $ZnO-V_2O_5-MnO_2-Nb_2O_5$ (ZVMN) ceramic semiconductors sintered at a temperature as low as $900^{\circ}C$. As the doping content of $Yb_2O_3$ increases, the ceramic density slightly increases from 5.50 to $5.54g/cm^3$; also, the average ZnO grain size is in the range of $5.3-5.6{\mu}m$. The switching voltage increases from 4,874 to 5,494 V/cm when the doping content of $Yb_2O_3$ is less than 0.1 mol%, whereas further doping decreases this value. The ZVMN ceramic semiconductors doped with 0.1 mol% $Yb_2O_3$ reveal an excellent nonohmic coefficient as high as 70. The donor density of ZnO gain increases in the range of $2.46-7.41{\times}10^{17}cm^{-3}$ with increasing doping content of $Yb_2O_3$ and the potential barrier height and surface state density at the grain boundaries exhibits a maximum value (1.25 eV) at 0.1 mol%. The dielectric constant (at 1 kHz) decreases from 592.7 to 501.4 until the doping content of $Yb_2O_3$ reaches 0.1 mol%, whereas further doping increases it. The value of $tan{\delta}$ increases from 0.209 to 0.268 with the doping content of $Yb_2O_3$.

• Journal of the Korean Ceramic Society
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• v.37 no.5
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• pp.491-496
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• 2000

Single phae Pb(Mg1/3Nb2/3)O3-based solid solutions, the Mg2+ of which are replaced by 20mol% of Ni2+, Zn2+, Cd2+, and the Pb2+ of which are replaced by 0∼20 mol% of La3+, were synthesized and their ordering structures of B-site cations were investigated by XRD and TEM. The B'-site cations (Mg2+, Ni2+, Zn2+, Cd2+) are disordered while these B'-site cations and the B"-site cations (Nb5+) are nonstoichiometrically 1:1 ordered within the ordered nano-domains dispersed in the Nb5+-rich disordered matrix. The charge imbalance between the B'-rich ordered nano-domains and the B"-rich disordered matrix are compensated by the doping of electron donor such as La3+, which enhances the degree of nonstoichiometric 1:1 ordering. For a given La3+ content, the degree of nonstoichiometric 1:1 ordering increases as the average ionic size difference between the B'-and B"-site cations increases, Ni2+

• Journal of the Korean Ceramic Society
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• v.40 no.4
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• pp.333-339
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• 2003

Ba (Co$_{1}$ 3/Nb$_{2}$ 3/)O$_3$(BCN) has a 1:2 ordered hexagonal structure. Q-value of BCN increased with increasing sintering temperature however, it significantly decreased when the sintering temperature exceeded 140$0^{\circ}C$ Ba (Co$_{1}$ 3/Nb$_{2}$ 3/)O$_3$(BZN) has the 1:2 ordered hexagonal structure and the degree of the 1 : 2 ordering decreased with the increase of the sintering temperature. The Q value of the BZN increased with increasing the sintering temperature and BZN sintered at 140$0^{\circ}C$ for 6h has a maximum Q-value. For (1-x) Ba (Co$_{1}$ 3/Nb$_{2}$ 3/)O$_3$-zBa(Zn$_{1}$ 3/Nb$_{2}$ 3/)O$_3$[(1-x)BCN-xBZN] ceramics the 1:2 ordered hexagonal structure was observed in the specimens with x$\leq$0.3 and the BaNb$_{6}$ O$^{16}$ second phase was found in the specimens with x$\geq$0.6. Grain Growth, which is rotated to the BaNb$_{6}$ O$^{16}$ second phase occurred in the specimens with x$\geq$ 0.5. In this work, the excellent microwave dielectric properties of $\tau$r=0.0 ppm/$^{\circ}C$$\varepsilon$r=34.5 and Q,$\times$f=97000GHz sere obtained for the 0.7BCV-0.3BZN ceramics sintered at 1400$0^{\circ}C$ for 20h.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.03a
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• pp.5-5
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• 2010

$(Na_{0.5}K_{0.5})NbO_3$ (NKN) ceramic with 1.5 mol% CuO added (NKNC) was well sintered even at a low temperature of $900^{\circ}C$ with the addition of ZnO. Most of the ZnO reacted with the CuO and formed the liquid phase that assisted the densification of the specimens at $900^{\circ}C$. A few $Zn^{2+}$ ions entered the matrix of the specimens and increased the coercive field ($E_c$) and $Q_m$ values of the specimens. High-piezoelectric properties of $k_p=0.37$, $Q_m=755$, and ${\varepsilon}_3\;^T/{\varepsilon}_0=327$ were obtained from the NKNC ceramics containing 1.0 mol% ZnO sintered at $900^{\circ}C$ for 2 h.

• Journal of the Korean Ceramic Society
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• v.34 no.5
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• pp.500-504
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• 1997

Perovskite Pb0.7Ba0.3Zn1/3Nb2/3O3 substituted with 0.3 mole fraction for Pb-site in PbZn1/3Nb2/3O3 relaxor and pyrochlore Pb1.83Ba0.29Zn1.71Nb2/3O6.39 were mixed and dielectric characteristics of this composites were investigated. Percolation limit of perovskite phase, which was determined by microstructural observation in the composite as an isolation of perovskite phase from pyrochlore matrix, was 28.9-47.5 vol%. Ferroelectric phase transition below percolation limit depends on a parameter which affects the propagation of lattice vibration between isolated perovskite phase and pyrochlore matrix. Therefore, it is believed that ferroelectric lattice vibration of isolated perovskite phase could be transfered to pyrochlore matrix when the oxygen octahedra are linked in 3-dimension and highly polarizable Pb2+ ions are contained in both phases.

• Transactions on Electrical and Electronic Materials
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• v.8 no.2
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• pp.84-88
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• 2007

[ $Bi_{1.5}Zn_{1.0}Nb_{1.5}O_7$ ] (BZN), $Bi_2Mg_{2/3}Nb_{4/3}O_7$ (BMN), and $Bi_2Cu_{2/3}Nb_{4/3}O_7$ (BCN) pyrochlore thin films were prepared on $Cu/Ti/SiO_2/Si$ substrates by pulsed laser deposition and the micro-structural and electrical properties were characterized for embedded capacitor applications. The BZN, BMN, and BCN films deposited at $25\;^{\circ}C$ and $150\;^{\circ}C$, respectively show smooth surface morphologies and dielectric constants of about $39\;{\sim}\;58$. The high dielectric loss of the films deposited at $150\;^{\circ}C$ compared with films deposited at $25\;^{\circ}C$ was attributed to the defects existing at interface between the films and copper electrode by an oxidation of copper bottom electrode. The leakage current densities and breakdown voltages in 200 nm thick-BMN and BZN films deposited at $150\;^{\circ}C$ are approximately $2.5\;{\times}\;10^{-8}\;A/cm^2$ at 3 V and above 10 V, respectively. Both BZN and BMN films are considered to be suitable materials for embedded capacitor applications.

• Journal of the Korean Ceramic Society
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• v.15 no.2
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• pp.79-84
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• 1978

$Zn_{0.105}Co_{0.025}Li_{0.435-1/2x}Ni_x Fe_{2.435-1/2x-y }Mn_y O_4$ 조성의 메모리코어 특성과 $Nb_2O_5$ 및 $V_2O_5$의 소량 첨가가 square-loop성질에 주는 영향을 연구하였다. 위의 조성에서 닉켈의 양 x는 0에서 0.15까지, 그리고 망간의 양 y는 0.05에서 0.25까지 변화시켰다. $Nb_2O_5$와 $V_2O_5$의 양은 각각 위의 화학식에 대하여 0.005에서 0.015까지 변화시켰다. 실험결과에 의하면 $Mn^{+3}$를 octahedral자리에 첨가하였을 때에는 잡음이 감소되었고 메모리코어 squareness와 보자련의 온도계수가 증가하였다. 닉켈을 첨가하였을 때에는 메모리코어의 squareness와 잡음이 증가하였다. $Nb_2O_5$를 소량 첨가하였을 때에는 square-loop성질이 개선되었음에 비하여 $V_2O_5$를 소량 첨가하였을 때에는 square-loop성질이 나빠졌다.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.11
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• pp.2021-2025
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• 2010

Electrical and structural properties were investigated on the effects of ZnO and the lead-free NKN-LST ceramics with the addition of ZnO were fabricated by a conventional mixed oxide method. A gradual change in the crystal and microstructure was observed with the increase of ZnO addition. For the NKN-LST-ZnO ceramics sintered at $1050^{\circ}C$, bulk density increased with the addition of ZnO and showed maximum value at addition 2.0mol% of ZnO. Curie temperature of the NKN-LST-ZnO ceramics slightly decreased with adding ZnO. The dielectric constant, piezoelectric constant ($d_{33}$) and electromechanical coupling factor ($k_p$) increased at the small amount of ZnO addition, which might be due to the increase in density. The high piezoelectric properties = 153 pC/N, electromechanical coupling factor = 0.484 and dielectric constant = 2883 were obtained for the NKN-LST+0.5ZnO ceramics sintered at $1050^{\circ}C$ for 2h.