• 한국재료학회지
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• 제21권1호
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• pp.34-38
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• 2011

In this study, the effects of an annealed buffer layer with different thickness on heterojunction diodes based on the ZnO/ZnO/p-Si(111) systems were reported. The effects of an annealed buffer layer with different thickness on the structural, optical, and electrical properties of zinc oxide (ZnO) films on p-Si(111) were also studied. Before zinc oxide (ZnO) deposition, different thicknesses of ZnO buffer layer, 10 nm, 30 nm, 50 nm and 70 nm, were grown on p-Si(111) substrates using a radio-frequency sputtering system; samples were subsequently annealed at $700^{\circ}C$ for 10 minutes in $N_2$ in a horizontal thermal furnace. Zinc oxide (ZnO) films with a width of 280nm were also deposited using a radio-frequency sputtering system on the annealed ZnO/p-Si (111) substrates at room temperature; samples were subsequently annealed at $700^{\circ}C$ for 30 minutes in $N_2$. In this experiment, the structural and optical properties of ZnO thin films were studied by XRD (X-ray diffraction), and room temperature PL (photoluminescence) measurements, respectively. Current-voltage (I-V) characteristics were measured with a semiconductor parameter analyzer. The thermal tensile stress was found to decrease with increasing buffer layer thickness. Among the ZnO/ZnO/p-Si(111) diodes fabricated in this study, the sample that was formed with the condition of a 50 nm thick ZnO buffer layer showed a strong c-axis preferred orientation and I-V characteristics suitable for a heterojunction diode.

• 한국재료학회지
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• 제23권3호
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• pp.161-167
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• 2013

The ZnO thin films were grown on GaN template substrates by RF magnetron sputtering at different RF powers and n-ZnO/p-GaN heterojunction LEDs were fabricated to investigate the effect of the RF power on the characteristics of the n-ZnO/p-GaN LEDs. For the growth of the ZnO thin films, the substrate temperature was kept constant at $200^{\circ}C$ and the RF power was varied within the range of 200 to 500W at different growth times to deposit films of 100 nm thick. The electrical, optical and structural properties of ZnO thin films were investigated by ellipsometry, X-ray diffraction (XRD), atomic force microscopy (AFM), photoluminescence (PL) and by assessing the Hall effect. The characteristics of the n-ZnO/p-GaN LEDs were evaluated by current-voltage (I-V) and electroluminescence (EL) measurements. ZnO thin films were grown with a preferred c-axis orientation along the (0002) plane. The XRD peaks shifted to low angles and the surface roughness became non-uniform with an increase in the RF power. Also, the PL emission peak was red-shifted. The carrier density and the mobility decreased with the RF power. For the n-ZnO/p-GaN LED, the forward current at 20 V decreased and the threshold voltage increased with the RF power. The EL emission peak was observed at approximately 435 nm and the luminescence intensity decreased. Consequently, the crystallinity of the ZnO thin films grown with RF sputtering powers were improved. However, excess Zn affected the structural, electrical and optical properties of the ZnO thin films when the optimal RF power was exceeded. This excess RF power will degrade the characteristics of light emitting devices.

• 한국재료학회지
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• 제17권6호
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• pp.303-307
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• 2007

ZnO thin films were prepared by pulsed laser deposition on amorphous fused silica substrates at different ambient $O_2$ pressures varying from 0.5 to 500 mTorr, to observe the effect of ambient gas on their crystalline structure, morphology and optical properties. Results of X-ray diffraction, scanning electron microscopy, atomic force microscopy and photoluminescence studies showed that crystallinity, surface features and optical properties of the films significantly depended on the oxygen background pressure during growth. A low oxygen pressure (0.5 mTorr) seems to be suitable for the growth of highly c-axis oriented and smoother films possessing a superior luminescent property. The films grown at the higher $O_2$ pressures (50-500 mTorr) were found to have many defects probably due to an excessive incorporation of oxygen into ZnO lattice. We speculate that the film crystallinity could be affected by the kinetics of atomic arrangement during deposition at the higher oxygen pressures.

• Advances in nano research
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• 제1권1호
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• pp.59-70
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• 2013

ZnO nanostructures of rod-like, faceted bar, cup-end bars, and spindle shaped morphologies could be grown by a low power ultrasonic synthesis process. pH of the reaction mixture seems to plays an important role for defining the final morphology of ZnO nanostructures. While the solution pH as low as 7 produces long, uniform rod-like nanostructures of mixed phase (ZnO and $Zn(OH)_2$), higher pH of the reaction mixture produces ZnO nanostructures of different morphologies in pure hexagonal wurtzite phase. pH of the reaction as high as 10 produces bar shaped uniform nanostructures with lower specific surface area and lower surface and lattice defects, reducing the defect emissions of ZnO in the visible region of their photoluminescence spectra.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.407-407
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• 2012

본 연구에서는 p형 전도 특성을 갖는 ZnO 박막 연구를 위해 RF 마그네트론 스퍼터 법으로 Li이 1 at.% 첨가된 ZnO target을 이용하여 ZnLiO 박막을 제작하였다. ZnLiO 박막은 $500{\sim}650^{\circ}C$의 온도 구간에서 $50^{\circ}C$ 단계로 아르곤 가스와 산소의 가스 분압비를 조절하여 성장하였으며, 급속 열처리 법으로 산소분위기에서 3분간 열처리 하였다. 성장된 박막은 전자주사현미경과 x-ray 회절 분광법을 이용하여 구조적 특성을 분석하였고, Hall 효과 측정을 통하여 전기적 특성을 분석하였다. Photoluminescence (PL)법을 통하여 박막의 광학적 특성을 분석하였다. 초기 제작된 ZnLiO 박막은 산소 분위기에서의 급속 열처리과정을 통하여 결정성과 p형 전도 특성이 향상됨을 확인하였다. 이는 열처리 과정을 통해 격자 내 치환되지 못한 Li 원자가 Zn 자리로 치환됨에 따라 격자가 안정화 되며, 억셉터 농도의 증가를 통하여 p-type 전도 특성이 개선된 것으로 보여진다.

• 대한화학회지
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• 제43권2호
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• pp.206-212
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• 1999

본 연구의 목적은 기존의 $Zn_2SiO_4:Mn$형광체에 새로운 co-dopant를 첨가하여 발광특성을 향상시키는 것이다. co-dopant로서 선정한 Mg와 Cr이온들은 Zn자리를 치환하는 것으로 알려져 있으며 실제로 co-doping 시 각각 발광휘도와 decay time을 개선시키는 효과를 거두었다. $Zn_2SiO_4:Mn$에 Mg와 Cr이온들이 co-doping될 시에는 lattice 및 $Mn^{2+}$의 에너지 준위를 변화시키는 것으로 추정되어 발광휘도 및 decay time의 변화를 일으키는 것으로 해석된다. 특히 이 원소들은 발광과정에 긍정정인 영향을 끼쳐 Mg는 발광휘도를 중가시키고 Cr은 decay time을 감소시키는 결과를 얻었다. $Zn_2SiO_4:Mn,\;Mg$ 형광체의 발광휘도 개선은 DV-X${\alpha}$ embedded cluster 계산방법으로 설명할 수 있었고 반면에 $Zn_2SiO_4:Mn,\;Cr$ 형광체가 decay time을 줄이는 원인은 Mn이온과 Cr이온사이에 energy transfer가 일어나 발생되는 것으로 추정된다.

• 한국분말재료학회지
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• 제27권2호
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• pp.146-153
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• 2020

The co-doping effect of aliovalent metal ions such as Mg²⁺, Ca²⁺, Sr²⁺, Ba²⁺, and Zn²⁺ on the photoluminescence of the Y₂O₃:Eu³⁺ red phosphor, prepared by spray pyrolysis, is analyzed. Mg²⁺ metal doping is found to be helpful for enhancing the luminescence of Y₂O₃:Eu³⁺. When comparing the luminescence intensity at the optimum doping level of each Mg²⁺ ion, the emission enhancement shows the order of Zn²⁺ ≈ Ba²⁺ > Ca²⁺ > Sr³⁺ > Mg²⁺. The highest emission occurs when doping approximately 1.3% Zn²⁺, which is approximately 127% of the luminescence intensity of pure Y₂O₃:Eu³⁺. The highest emission was about 127% of the luminescence intensity of pure Y₂O₃:Eu³⁺ when doping about 1.3% Zn²⁺. It is determined that the reason (Y, M)₂O₃:Eu³⁺ has improved luminescence compared to that of Y₂O₃:Eu³⁺ is because the crystallinity of the matrix is improved and the non-luminous defects are reduced, even though local lattice strain is formed by the doping of aliovalent metal. Further improvement of the luminescence is achieved while reducing the particle size by using Li₂CO₃ as a flux with organic additives.

• 센서학회지
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• 제15권3호
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• pp.216-221
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• 2006

ZnO thin films prepared by PLD method exhibit an excellent optical property, but may have some problems such as incomplete surface roughness and crystallinity. In this study, undoped ZnO buffer layers were deposited on (0001) sapphire substrates by ultra high vacuum pulse laser deposition (UHV-PLD) and molecular beam epitaxy (MBE) methods, respectively. After post annealing of ZnO buffer layer, undoped ZnO thin films were deposited under different oxygen pressure ($35{\sim}350$ mtorr) conditions. The Arsenic-doped (1, 3 wt%) ZnO thin layers were deposited on the buffer layer of undoped ZnO by UHV-PLD method. The optical property of the ZnO thin films was analyzed by photoluminescence (PL) measurement. The ${\theta}-2{\theta}$ XRD analysis exhibited a strong (002)-peak, which indicates c-axis preferred orientation. Field emission-scanning electron microscope (FE-SEM) revealed that microstructures of the ZnO thin films were varied by oxygen partial pressure, Arsenic doping concentration, and deposition method of the undoped ZnO buffer layer. The denser and smoother films were obtained when employing MBE-buffer layer under lower oxygen partial pressure. It was also found that higher Arsenic concentration gave the enhanced growing of columnar structure of the ZnO thin films.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 Techno-Fair 및 추계학술대회 논문집 전기물성,응용부문
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• pp.94-95
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• 2007

We have observed electrical properties of ZnO thin films for the fabrication of transparent thin film transistor. ZnO thin films were deposited on $Al_2O_3$(0001) substrate at various temperatures by pulsed laser deposition(PLD). The third of harmonic(355nm) Nd:YAG laser was used for pulsed laser deposition. X-ray diffraction(XRD), field emission-scanning electron microscope(FE-SEM), and photoluminescence were used to characterize physical and optical properties of ZnO thin film.. The results indicated the ZnO film showed good optical properties as increasing temperatures, with low FWHM of exciton-related peak and XRD(0002) peak.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.99-100
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• 2007

ZnO films on $Al_2O_3$ substrates were grown using a pulsed laser deposition method. Through photoluminescence (PL) and X-ray diffraction (XRD) measurements, the optimum growth conditions for the ZnO growth were established. The results of the XRD measurements indicate that ZnO films were strongly oriented to the c-axis of the hexagonal structure and epitaxially crystallized under constraints created by the substrate. The full width half maximum for a theta curve of the (0002) peak was $0.201^{\circ}$. Also, from the PL measurements, the grown ZnO films were observed to give free exciton behaviour, which indicates a high quality of the epilayer. The Hall mobility and carrier density of the ZnO films at 293 K were estimated to be $299\;cm^2/V\;s$ and $8.27\;{\times}\;10^{16}\;cm^{-3}$, respectively. The absorption spectra revealed that the temperature dependance of the optical band gap on the ZnO films was $E_g(T)\;=\;3.439\;eV\;-\;(5.30\;{\times}\;10^{-4}\;ev/K)T^2(367\;+\;T)$.